Mitsubishi Electric PSS**S72FT User manual

Publication Date: September 2015
1
<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
PSS**S72FT
Table of contents
CHAPTER 1 INTRODUCTION .................................................................................................................................2
1.1 Features of 1200V Mini DIPIPM with BSD............................................................................................................. 2
1.2 Functions ............................................................................................................................................................... 3
1.3 Target Applications................................................................................................................................................. 4
1.4 Product Line-up...................................................................................................................................................... 4
CHAPTER 2 SPECIFICATIONS AND CHARACTERISTICS....................................................................................5
2.1 1200V Mini DIPIPM with BSD Specifications ......................................................................................................... 5
2.1.1 Maximum Ratings ..............................................................................................................................................................................................5
2.1.2 Thermal Resistance ...........................................................................................................................................................................................7
2.1.3 Electric Characteristics and Recommended Conditions.....................................................................................................................................8
2.1.4 Mechanical Characteristics and Ratings ..........................................................................................................................................................10
2.2 Protective Functions and Operating Sequence.....................................................................................................11
2.2.1 Short Circuit Protection ....................................................................................................................................................................................11
2.2.2 Control Supply UV Protection ..........................................................................................................................................................................13
2.2.3 Temperature output function VOT ......................................................................................................................................................................15
2.3 Package Outlines................................................................................................................................................. 20
2.3.1 Package outlines..............................................................................................................................................................................................20
2.3.2 Marking............................................................................................................................................................................................................21
The Lot number indicates production year, month, running number and country of origin.........................................................................................21
2.3.3 Terminal Description ........................................................................................................................................................................................22
2.4 Mounting Method ................................................................................................................................................. 24
2.4.1 Electric Spacing ...............................................................................................................................................................................................24
2.4.2 Mounting Method and Precautions...................................................................................................................................................................24
2.4.3 Soldering Conditions........................................................................................................................................................................................25
CHAPTER 3 SYSTEM APPLICATION GUIDANCE................................................................................................27
3.1 Application Guidance ........................................................................................................................................... 27
3.1.1 System connection...........................................................................................................................................................................................27
3.1.2 Interface Circuit (Direct Coupling Interface example for using one shunt resistor) ...........................................................................................28
3.1.3 Interface Circuit (Example of Opto-coupler Isolated Interface) .........................................................................................................................29
3.1.4 External SC Protection Circuit with Using Three Shunt Resistors ....................................................................................................................30
3.1.5 Circuits of Signal Input Terminals and Fo Terminal...........................................................................................................................................30
3.1.6 Snubber Circuit ................................................................................................................................................................................................32
3.1.7 Recommended Wiring Method around Shunt Resistor.....................................................................................................................................33
3.1.8 Precaution for Wiring on PCB ..........................................................................................................................................................................35
3.1.9 Parallel operation of DIPIPM............................................................................................................................................................................36
3.1.10 SOA of Mini DIPIPM.......................................................................................................................................................................................36
3.1.11 SCSOA ..........................................................................................................................................................................................................37
3.1.12 Power Life Cycles ..........................................................................................................................................................................................38
3.2 Power Loss and Thermal Dissipation Calculation ................................................................................................ 39
3.2.1 Power Loss Calculation ...................................................................................................................................................................................39
3.2.2 Temperature Rise Considerations and Calculation Example ............................................................................................................................41
3.3.1 Evaluation Circuit of Noise Withstand Capability..............................................................................................................................................42
3.3.2 Countermeasures and Precautions..................................................................................................................................................................42
3.3.3 Static Electricity Withstand Capability...............................................................................................................................................................43
CHAPTER 4 Bootstrap Circuit Operation................................................................................................................44
4.1 Bootstrap Circuit Operation.................................................................................................................................. 44
4.2 Bootstrap Supply Circuit Current at Switching State ............................................................................................ 45
4.3 Note for designing the bootstrap circuit................................................................................................................ 46
4.4 Initial charging in bootstrap circuit........................................................................................................................ 47
CHAPTER 5 PACKAGE HANDLING ......................................................................................................................48
5.1 Packaging Specification ....................................................................................................................................... 48
5.2 Handling Precautions........................................................................................................................................... 49

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
2
CHAPTER 1 INTRODUCTION
1.1 Features of 1200V Mini DIPIPM with BSD
Mini DIPIPM with BSD is an ultra-small compact intelligent power module with transfer mold package
favorable for larger mass production. Power chips, drive and protection circuits are integrated in the module,
which make it easy for AC400-440V class low power motor inverter control. It includes many improvements
(loss performance, built-in peripheral functions and line-up expansion). Main features of this series are as
below.
・Newly developed 6th generation CSTBT are integrated for improving efficiency
・Incorporating bootstrap diode(BSD) with current limiting resistor for P-side gate driving supply
・Newly integrated temperature of control IC part output function
・Same package with Mini DIPIPM with BSD Series.
About detailed differences, please refer Section 1.5. Fig.1-1-1 and Fig.1-1-2 show the outline and internal
cross-section structure respectively.
Fig.1-1-1 Package image
Fig.1-1-2 Internal cross-section structure
Cu frame
Insulation sheet
(copper foil+ resin)
Molding resin
IGBT IC
FWDi
Al wire Au wire
BSD

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
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1.2 Functions
1200V Mini DIPIPM has following functions and inner block diagram is described in Fig.1-2-1.
●For P-side IGBTs:
- Drive circuit;
- High voltage level shift circuit;
- Control supply under voltage (UV) lockout circuit (without fault signal output).
- Built-in bootstrap diode (BSD) with current limiting resistor
●For N-side IGBTs:
-Drive circuit;
-Short circuit (SC) protection circuit (by inserting external shunt resistor into main current path)
-Control supply under voltage (UV) lockout circuit (with fault signal output)
-Outputting LVIC temperature by analog signal (No self over temperature protection)
●Fault Signal Output
-Corresponding to N-side IGBT SC and N-side UV protection.
●IGBT Drive Supply
-Single DC15V power supply (in the case of using bootstrap method)
●Control Input Interface
-Schmitt-triggered 5V input compatible, high active logic.
●UL recognized : UL1557 File E80276
Fig.1-2-1 Inner block diagram
Bootstrap Diode
with current limiting
resistor
Open emitter only
DIPIPM
HVIC1
HVIC2
HVIC3
HO
HO
HO
WOU
T
VOUT
UOUT
UN
VN
WN
VN1
VP1
VP
VP1
WP
VUFB
UP
VUFS
VVFB
VVFS
VWFB
VWFS
VNC
P
U
V
W
NU
VP1
IGBT1
Di1
IGBT2
Di2
IGBT3
Di3
IGBT4
Di4
IGBT5
Di5
IGBT6
Di6
LVIC
NV
NW
Fo
CFo
VOT
CIN
6th generation
Full gate CSTBT
Temperature output

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
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1.3 Target Applications
Motor drives for low power industrial equipments and household equipment such as air conditioners and so on.
(Except for vehicle application)
1.4 Product Line-up
Table 1-4-1 1200V Mini DIPIPM Line-up (Mini DIP with BSD series package)
Type Name (Note 1) IGBT Rating Motor Rating (Note 1) Isolation Voltage
PSS05S72FT 5A/1200V 0.75kW/440VAC Viso = 2500Vrms
(Sine 60Hz, 1min
All shorted pins-heat sink)
PSS10S72FT 10A/1200V 1.5kW/440VAC
Note 1: The motor ratings are calculation results. It will depend on the operation conditions.

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
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CHAPTER 2 SPECIFICATIONS AND CHARACTERISTICS
2.1 1200V Mini DIPIPM with BSD Specifications
1200V Mini DIPIPM specifications are described below by using PSS10S72FT (10A/1200V) as an example.
Please refer to respective datasheet for the detailed description of other types.
2.1.1 Maximum Ratings
The maximum ratings of PSS10S72FT are shown in Table 2-1-1.
Table 2-1-1 Maximum Ratings
INVERTER PART
Symbol Parameter Condition Ratings Unit
VCC Supply voltage Applied between P-NU,NV,NW 900 V
VCC(surge) Supply voltage (surge) Applied between P-NU,NV,NW 1000 V
VCES Collector-emitter voltage 1200 V
±ICEach IGBT collector current TC=25°C (Note) 10 A
±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 20 A
TjJunction temperature -30~+150 °C
Note: Pulse width and period are limited due to junction temperature.
CONTROL (PROTECTION) PART
Symbol Parameter Condition Ratings Unit
VDControl supply voltage Applied between VP1-VNC, VN1-VNC 20 V
VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS ,VWFB-VWFS 20 V
VIN Input voltage Applied between UP, VP, WP-VNC, UN, VN, WN-VNC -0.5~VD+0.5 V
VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V
IFO Fault output current Sink current at FOterminal 1 mA
VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V
TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
VCC(PROT) Self protection supply voltage limit
(Short circuit protection capability)
VD= 13.5~16.5V, Inverter Part
T
j
= 125°C, non-repetitive, less than 2μs 800 V
TCModule case operation temperature Measurement point of Tc is described below -30~+100 °C
Tstg Storage temperature -40~+125 °C
Viso Isolation voltage 60Hz, Sinusoidal, AC 1min, between connected all pins
and heat sink plate 2500 Vrms
Tc measurement position
(1) Vcc The maximum voltage can be biased between P-N. A voltage suppressing circuit such as a brake circuit is
necessary if P-N voltage exceeds this value.
(2) Vcc(surge) The maximum P-N surge voltage in switching state. If P-N voltage exceeds this voltage, a snubber circuit is
necessary to absorb the surge under this voltage.
(3) VCES The maximum sustained collector-emitter voltage of built-in IGBT and FWDi.
(4) +/-ICThe allowable continuous current flowing at collect electrode (Tc=25°C) Pulse width and period are limited due to
junction temperature.
(5) Tj The maximum junction temperature rating is 150°C.But for safe operation, it is recommended to limit the average
junction temperature up to 125°C. Repetitive temperature variation ∆Tj affects the life time of power cycle, so refer
life time curves for safety design.
(6) Vcc(prot) The maximum supply voltage for turning off IGBT safely in the case of an SC or OC faults. The power chip might not
be protected and break down in the case that the supply voltage is higher than this specification.
Control terminals
Tc point
IGBT chip position
FWDi chip position
Power terminals
Heat sink side
Groove
18mm 18mm
(1)
(2)
(3)
(4)
(5)
(6)
(7)

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
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(7) Tc position Tc (case temperature) is defined to be the temperature just beneath the specified power chip. Please mount a
thermocouple on the heat sink surface at the defined position to get accurate temperature information. Due to the
control schemes such different control between P and N-side, there is the possibility that highest Tc point is different
from above point. In such cases, it is necessary to change the measuring point to that under the highest power chip.
[Power chip position]
Fig.2-1-1 indicate the position of the each power chips. (This figure is the view from laser marked side.)
Fig.2-1-1 Power chip position
Dimension in mm
WN VN UN WP VP UP
IGBT
FWDi

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
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2.1.2 Thermal Resistance
Table 2-1-2 shows the thermal resistance of PSS10S72FT.
Table 2-1-2 Thermal resistance of PSS10S72FT
THERMAL RESISTANCE
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
Rth
(j
-c
)
QJunction to case thermal
resistance (Note)
Inverter IGBT part (per 1/6 module) - - 1.5 K/W
Rth
(j
-c
)
FInverter FWDi part (per 1/6 module) - - 1.8 K/W
Note : Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of
DIPIPM and heat sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal
conductivity of the applied grease. For reference, Rth(c-f) is about 0.3K/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k).
The above data shows the thermal resistance between chip junction and case at steady state. The thermal
resistance goes into saturation in about 10 seconds. The unsaturated thermal resistance is called as
transient thermal impedance which is shown in Fig.2-1-3. Zth(j-c)* is the normalized value of the transient
thermal impedance. (Zth(j-c)*= Zth(j-c) / Rth(j-c)max)
For example, the IGBT transient thermal impedance of PSS10S72FT in 0.2s is 1.61×0.8=1.288K/W.
The transient thermal impedance isn’t used for constantly current, but for short period current (ms order).
(e.g. in the cases at motor starting, at motor lock･･･)
0.1
1.0
0.01 0.1 1 10
Normalized thermal impedance Zth(j-c)
Time(s)
FWDi
IGBT
Fig.2-1-3 Typical transient thermal impedance (PSSxxS72FT)

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
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2.1.3 Electric Characteristics and Recommended Conditions
Table 2-1-3 shows the typical static characteristics and switching characteristics of PSS10S72FT.
Table 2-1-3 Static characteristics and switching characteristics of PSS10S72FT.
INVERTER PART (Tj= 25°C, unless otherwise noted)
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCE(sat) Collector-emitter saturation
voltage VD=VDB = 15V, VIN= 5V, IC= 10A Tj= 25°C - 1.50 2.20 V
Tj= 125°C - 1.75 2.50
VEC FWDi forward voltage VIN= 0V, -IC= 10A - 1.90 2.40 V
ton
Switching times
VCC= 600V, VD= VDB= 15V
IC= 10A, Tj= 125°C, VIN= 0↔5V
Inductive Load (upper-lower arm)
1.10 1.80 2.50 μs
tC(on) - 0.45 0.90 μs
toff - 2.40 3.40 μs
tC(off) - 0.40 0.80 μs
trr - 0.50 - μs
ICES Collector-emitter cut-off
current VCE=VCES Tj= 25°C - - 1 mA
Tj= 125°C - - 10
Switching time definition and performance test method are shown in Fig.2-1-4 and 2-1-5.
Switching characteristics are measured by half bridge circuit with inductance load.
Fig.2-1-4 Switching time definition Fig.2-1-5 Evaluation circuit (inductive load)
Short A for N-side IGBT, and short B for P-side IGBT evaluation
PSS10S72FT (10A/1200V)
Fig.2-1-6 Typical switching waveform
Conditions: VCC=600V, VD=VDB=15V, Tj=125°C, Ic=10A, Inductive load half-bridge circuit
trr
Irr
tc(on)
10% 10% 10% 10%
90%
90%
td(on)
tc(off)
td(off) tf
tr
( ton=td(on)+tr ) ( toff=td(off)+tf )
Ic
VCE
VCIN
P-side SW
Input signal
N-side SW
Input signal
VIN(5V

0V)
VDVCC
IN
GND CIN
LO
VCC
IN
VB
VS
HO
UP,VP,WP
UN,VN,WN
VNC
VUFB,VVFB,VWFB
VN1
CIN
COM
VP1 P
U,V,W
Ic
VCC
N-side
P-side
VDB
NU,NV,
NW
VUFS,VVFS,VWFS
L load
L load
VCE(200V/div)
t:200ns/div
VCE(200V/div)
Ic(5A/div)
Ic(5A/div)
t:200ns/div
Turn on Turn off

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
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Table 2-1-4 shows the typical control part characteristics of PSS20S71F6.
Table 2-1-4 Control (Protection) characteristics of PSS20S71F6
CONTROL (PROTECTION) PART (Tj= 25°C, unless otherwise noted)
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
ID
Circuit current
To ta l o f V P1-VNC, VN1-VNC VD=15V, VIN=0V - - 6.00
mA
VD=15V, VIN=5V - - 6.00
IDB Each part of VUFB- VUFS,
VVFB- VVFS, VWFB- VWFS
VD=VDB=15V, VIN=0V - - 0.55
VD=VDB=15V, VIN=5V - - 0.55
VSC(ref) Short circuit trip level VD= 15V (Note 1) 0.45 0.48 0.51 V
UVDBt P-side Control supply
under-voltage protection(UV) Tj≤125°C
Trip level 10.0 - 12.0 V
UVDBr Reset level 10.5 - 12.5 V
UVDt N-side Control supply
under-voltage protection(UV)
Trip level 10.3 - 12.5 V
UVDr Reset level 10.8 - 13.0 V
VOT Temperature output Pull down R=5kΩ(Note 2) LVIC Temperature=85C 2.51 2.64 2.76 V
VFOH Fault output voltage VSC = 0V, FOterminal pulled up to 5V by 10kΩ4.9 - - V
VFOL V
SC = 1V, IFO = 1mA - - 0.95 V
tFO Fault output pulse width CFO=22nF (Note 3) 1.6 2.4 - ms
IIN Input current VIN = 5V 0.70 1.00 1.50 mA
Vth(on) ON threshold voltage Applied between UP, VP, WP, UN, VN, WN-VNC - - 3.5 V
Vth
(
off
)
OFF threshold voltage 0.8 - -
VFBootstrap Di forward voltage IF=10mA including voltage drop by limiting resistor 0.5 0.9 1.3 V
R Built-in limiting resistance Included in bootstrap Di 16 20 24 Ω
Note 1 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 2 times of the current rating.
Note 2 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM.
3 : Fault signal Fo outputs when SC or UV protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed width
which is specified by the capacitor connected to CFO terminal. (CFO=9.1 x 10-6 x tFO [F]), but at UV failure, Fo outputs continuously until recovering from UV
state. (But minimum Fo pulse width is the specified time by CFO.)
Recommended operating conditions of PSS10S72FT are given in Table 2-1-5. It is highly recommended to
operate the modules within these conditions so as to ensure DIPIPM safe operation.
Table 2-1-5 Recommended operating conditions of PSS10S72FT
RECOMMENDED OPERATION CONDITIONS
Symbol Parameter Condition Limits Unit
Min. Typ. Max.
VCC Supply voltage Applied between P-NU, NV, NW 350 600 800 V
VDControl supply voltage Applied between VP1-VNC, VN1-VNC 13.5 15.0 16.5 V
VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS 13.0 15.0 18.5 V
∆VD, ∆VDB Control supply variation -1 - +1 V/μs
tdead Arm shoot-through blocking time For each input signal 3.0 - - μs
fPWM PWM input frequency TC≤100°C, Tj≤125°C - - 20 kHz
IOAllowable r.m.s. current
VCC = 600V, VD= 15V, P.F = 0.8,
Sinusoidal PWM
TC≤100°C, Tj≤125°C (Note1)
fPWM= 5kHz - - 5.3
Arms
fPWM= 15kHz - - 3.6
PWIN(on)
Minimum input pulse width
(Note 2) 2.0 - -
μs
PWIN(off)
200V

VCC

350V,
13.5VVD16.5V,
13.0VVDB18.5V,
-20CTc 100C,
N-line wiring inductance
less than 10nH
（Note 3）
Below rated current 2.5 - -
Between rated current
and 1.7 times of rated
current
2.9 - -
VNC V
NC variation Between VNC-NU, NV, NW (including surge) -5.0 - +5.0
V
TjJunction temperature -20 - +125 °C
Note 1: Allowable r.m.s. current depends on the actual application conditions.
2: DIPIPM might not make response if the input signal pulse width is less than PWIN(on)
3: IPM might make delayed response or no response for the input signal with off pulse width less than PWIN(off). Please refer below about delayed response.
Delayed Response Against Shorter Input Off Signal Than PWIN(off) (P-side only)

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
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About Control supply variation
If high frequency noise superimposed to the control supply line, IC malfunction might happen and cause DIPIPM erroneous
operation. To avoid such problem, line ripple voltage should meet the following specifications:
dV/dt +/-1V/μs, Vripple2Vp-p
2.1.4 Mechanical Characteristics and Ratings
The mechanical characteristics and ratings are shown in Table 2-1-6.
Please refer to Section 2.4 for the detailed mounting instruction of Mini DIPIPM.
Table 2-1-6 Mechanical characteristics and ratings of PSS10S72FT
MECHANICAL CHARACTERISTICS AND RATINGS
Parameter Condition Limits Unit
Min. Typ. Max.
Mounting torque Mounting screw : M3 (Note 1) Recommended 0.78 N·m 0.59 - 0.98 N·m
Terminal pulling strength Load 9.8N EIAJ-ED-4701 10 - - s
Terminal bending strength Load 4.9N
90deg. bend EIAJ-ED-4701 2 - - times
Weight - 21 - g
Heat-sink flatness (Note 2) -50 - 100 μm
Note 1: Plain washers (ISO 7089~7094) are recommended.
Note 2: Measurement point of heat sink flatness
P Side Control Input
Internal IGBT Gate
Output Current Ic t1
t2
Real line: off pulse width > PWIN(off); turn on time t1
Broken line: off pulse width < PWIN(off); turn on time t2
(t1:Normal switching time)
4.65mm
+
+
- Measurement position
Heat sink side
Heat sink side
12.78mm
13.5mm
23mm
-

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1200V Mini DIPIPM with BSD Series APPLICATION NOTE
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2.2 Protective Functions and Operating Sequence
Mini DIPIPM has Short circuit (SC), Under Voltage of control supply (UV) and temperature output (VOT) for
protection function. The operating principle and sequence are described below.
2.2.1 Short Circuit Protection
1. General
Mini DIPIPM uses external shunt resistor for the current detection as shown in Fig.2-2-1. The internal
protection circuit inside the IC captures the excessive large current by comparing the CIN voltage generated at
the shunt resistor with the referenced SC trip voltage, and perform protection automatically. The threshold
voltage trip level of the SC protection Vsc(ref) is typ. 0.48V.
In case of SC protection happens, all the gates of N-side three phase IGBTs will be interrupted together with
a fault signal output. To prevent DIPIPM erroneous protection due to normal switching noise and/or recovery
current, it is necessary to set an RC filter (time constant: 1.5μ~ 2μs) to the CIN terminal input (Fig.2-2-1, 2-2-2).
Also, please make the pattern wiring around the shunt resistor as short as possible.
Fig.2-2-1 SC protecting circuit Fig.2-2-2 Filter time constant setting
2. SC protection Sequence
SC protection (N-side only with the external shunt resistor and RC filter)
a1. Normal operation: IGBT ON and carrying current.
a2. Short circuit current detection (SC trigger).
It is necessary to set RC time constant so that IGBT shut down within 2.0μs when SC. (1.5~2.0μs is recommended generally.)
a3. All N-side IGBTs’ gate are hard interrupted.
a4. All N-side IGBTs turn OFF.
a5. Fo outputs. The pulse width of the Fo signal is set by the external capacitor CFO.
a6. Input = “L”. IGBT OFF
a7. Fo finishes output, but IGBTs don't turn on until inputting next ON signal (LH).
IGBT of each phase can return to normal state by inputting ON signal to each phase.
a8. Normal operation: IGBT ON and outputs current.
Fig.2-2-3 SC protection timing chart
Lower-side control
input
Protection circuit state
Internal IGBT gate
Output current Ic
Sense voltage of
the shunt resistor
Error output Fo
SC trip current level
a2
SET RESET
SC reference voltage
a1
a3
a6
a7
a4
a8
a5
Delay by RC filtering
SC protective level
Collect current Ic
Input pulse width tw (μs)
2
0
Collector
current
VNC
N1 NW
C
Shunt resistor
P
V
U
W
N-side IGBTs
P-side IGBTs
Drive Circuit
Drive Circuit
SC Protection
CIN
R
SC protection external
NV
NU

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3. Determination of Shunt Resistance
(1) Shunt resistance
The value of current sensing resistance is calculated by the following formula:
RShunt = VSC(ref)/SC
where VSC(ref) is the SC trip voltage.
The maximum SC trip level SC(max) should be set less than the IGBT minimum saturation current which is
1.7 times as large as the rated current. For example, the SC(max) of PSS10S72FT should be set to
10x1.7=17A. The parameters (VSC(ref), RShunt) dispersion should be considered when designing the SC trip
level.
For example of PSS10S72FT, there is +/-0.03V dispersion in the spec of VSC(ref) as shown in Table 2-2-1.
Table 2-2-1 Specification for VSC(ref) (unit: V)
Condition Min Typ Max
at Tj=25°C, VD=15V 0.45 0.48 0.51
Then, the range of SC trip level can be calculated by the following expressions:
RShunt(min)=VSC(ref) max /SC(max)
RShunt(typ)= RShunt(min) / 0.95* then SC(typ) = VSC(ref) typ / RShunt(typ)
RShunt(max)= RShunt(typ) x 1.05* then SC(min)= VSC(ref) min / RShunt(max)
*)This is the case that shunt resistance dispersion is within +/-5%.
So the SC trip level range is described as Table 2-2-2.
Table 2-2-2 Operative SC Range (RShunt=30mΩ(min), 31.6mΩ(typ), 33.2mΩ(max)
Condition min. typ. Max.
at Tj=25°C, VD=15V 13.5A 15.2A 17A
(e.g. 30mΩ(Rshunt(min))= 0.51V (=VSC(max)) / 17A(=SC(max))
There is the possibility that the actual SC protection level becomes less than the calculated value. This is
considered due to the resonant signals caused mainly by parasitic inductance and parasitic capacity. It is
recommended to make a confirmation of the resistance by prototype experiment.
(2) RC Filter Time Constant
It is necessary to set an RC filter in the SC sensing circuit in order to prevent malfunction of SC protection
due to noise interference. The RC time constant is determined depending on the applying time of noise
interference and the SCSOA of the DIPIPM.
When the voltage drop on the external shunt resistor exceeds the SC trip level, The time (t1) that the CIN
terminal voltage rises to the referenced SC trip level can be calculated by the following expression:
)1ln(1
)1(
1
cshunt
SC
t
cshuntSC
IR V
t
IRV


 



Vsc : the CIN terminal input voltage, Ic : the peak current, τ: the RC time constant
On the other hand, the typical time delay t2 (from Vsc voltage reaches Vsc(ref) to IGBT gate shutdown) of
IC is shown in Table 2-2-3.
Table 2-2-3 Internal time delay of IC
Item Min typ max Unit
IC transfer delay time - - 1.0
μs
Therefore, the total delay time from an SC level current happened to the IGBT gate shutdown becomes:
tTOTAL=t1+t2

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
13
2.2.2 Control Supply UV Protection
The UV protection is designed to prevent unexpected operating behavior as described in Table 2-2-4.
Both P-side and N-side have UV protecting function. However, fault signal (Fo) output only corresponds to
N-side UV protection. Fo output continuously during UV state.
In addition, there is a noise filter (typ. 10μs) integrated in the UV protection circuit to prevent instantaneous
UV erroneous trip. Therefore, the control signals are still transferred in the initial 10μs after UV happened.
Table 2-2-4 DIPIPM operating behavior versus control supply voltage
Control supply voltage Operating behavior
0-4.0V (P, N)
In this voltage range, built-in control IC may not work properly.
Normal operating of each protection function (UV, Fo output etc.) is
not also assured.
Normally IGBT does not work. But external noise may cause DIPIPM
malfunction (turns ON), so DC-link voltage need to start up after
control supply starts-up.
4.0-UVDt (N), UVDBt (P) UV function becomes active and output Fo (N-side only).
Even if control signals are applied, IGBT does not work
UVDt (N)-13.5V
UVDBt (P)-13.0V
IGBT can work. However, conducting loss and switching loss will
increase, and result extra temperature rise at this state,.
13.5-16.5V (N)
13.0-18.5V (P) Recommended conditions.
16.5-20.0V (N)
18.5-20.0V (P)
IGBT works. However, switching speed becomes fast and saturation
current becomes large at this state, increasing SC broken risk.
20.0V-(P, N) The control circuit might be destroyed.
Ripple Voltage Limitation of Control Supply
If high frequency noise superimposed to the control supply line, IC malfunction might happen and
cause DIPIPM erroneous operation. To avoid such problem happens, line ripple voltage should meet the
following specifications:
dV/dt +/-1V/μs, Vripple2Vp-p

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
14
[N-side UV Protection Sequence]
a1. Control supply voltage V D exceeds under voltage reset level (UVDr), but IGBT turns ON by next
ON signal (LH).(IGBT of each phase can return to normal state by inputting ON signal to each phase.)
a2. Normal operation: IGBT ON and carrying current.
a3. VD level dips to under voltage trip level. (UVDt).
a4. All N-side IGBTs turn OFF in spite of control input condition.
a5. Fo outputs for the period set by the capacitance CFO, but output is extended during VDkeeps below UVDr.
a6. VD level reaches UVDr.
a7. Normal operation: IGBT ON and outputs current.
Fig.2-2-4 Timing chart of N-side UV protection
[P-side UV Protection Sequence]
a1. Control supply voltage VDB rises. After the voltage reaches under voltage reset level UVDBr,
IGBT turns on by next ON signal (LH).
a2. Normal operation: IGBT ON and outputs current.
a3. VDB level drops to under voltage trip level (UVDBt).
a4. IGBT of the corresponding phase only turns OFF in spite of control input signal level,
but there is no FOsignal output.
a5. VDB level reaches UVDBr.
a6. Normal operation: IGBT ON and outputs current.
Fig.2-2-5 Timing Chart of P-side UV protection
UVDr
RESET SET RESET
UVDt
a1
a2
a3
a4
a6
a7
a5
Control input
Protection circuit state
Control supply voltage VD
Output current Ic
Error output Fo
Control input
Protection circuit state
Control supply voltage VDB
Output current Ic
Error output Fo
UVDBr
RESET SET RESET
UVDBt
Keep High-level (no fault output)
a1
a2
a3
a4
a5
a6

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
15
2.2.3 Temperature output function VOT
(1) Usage of this function
This function measures the temperature of control LVIC by built in temperature sensor on LVIC.
The heat generated at IGBT and FWDi transfers to LVIC through molding resin of package and outer heat sink.
So LVIC temperature cannot respond to rapid temperature rise of those power chips effectively. (e.g. motor
lock, short circuit) It is recommended to use this function for protecting from slow excessive temperature rise
by such cooling system down and continuance of overload operation. （Replacement from the thermistor
which was mounted on outer heat sink currently）
[Note]
In this function, DIPIPM cannot shutdown IGBT and output fault signal by itself when temperature rises
excessively. When temperature exceeds the defined protection level, controller (MCU) should stop the DIPIPM.
Fig.2-2-6 Temperature detecting point Fig.2-2-7 Thermal conducting from power chips
(2) VOT characteristics
VOT output circuit, which is described in Fig.2-2-9, is the output of OP amplifier circuit. The current capability
of VOT output is described as Table 2-2-6. The characteristics of VOT output vs. LVIC temperature is linear
characteristics described in Fig.2-2-13. There are some cautions for using this function as below.
Table 2-2-6 Output capability
(Tc=-20°C ~100°C)
min.
Source 1.7mA
Sink 0.1mA
Source: Current flow from VOT to outside.
Sink : Current flow from outside to VOT.
Fig.2-2-8 VOT output circuit
In the case of detecting lower temperature than room temperature
It is recommended to insert 5.1kΩpull down resistor for getting linear output characteristics at lower
temperature than room temperature. When the pull down resistor is inserted between VOT and VNC(control
GND), the extra current calculated by VOT output voltage / pull down resistance flows as LVIC circuit current
continuously. In the case of only using VOT for detecting higher temperature than room temperature, it isn't
necessary to insert the pull down resistor.
Fig.2-2-9 VOT output circuit in the case of detecting low temperature
Ref
VOTTemperature
si
g
nal
VNC
Inside LVIC
of DIPIPM
5V
MCU
Ref
VOT
Temperature
si
g
nal
VNC
Inside LVIC
of DIPIPM
5.1kΩ
MCU
Power Chip Area
←LVIC
(Detecting point)
Heatsink
IGBT LVIC
FWDi
Temperature of
LIVC is affected
from heatsink.

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
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In the case of using with low voltage controller(MCU)
In the case of using VOT with low voltage controller (e.g. 3.3V MCU), VOT output might exceed control supply
voltage 3.3V when temperature rises excessively. If system uses low voltage controller, it is recommended to
insert a clamp Di between control supply of the controller and this output for preventing over voltage.
Fig.2-2-10 VOT output circuit in the case of using with low voltage controller
In the case that the protection level exceeds control supply of the controller
In the case of using low voltage controller like 3.3V MCU, if it is necessary to set the trip VOT level to control
supply voltage (e.g. 3.3V) or more, there is the method of dividing the VOT output by resistance voltage divider
circuit and then inputting to A/D converter on MCU (Fig.2-2-11). In that case, sum of the resistances of divider
circuit should be almost 5.1kΩ. About the necessity of clamp diode, we consider that the divided output will not
exceed the supply voltage of controller generally, so it will be unnecessary to insert the clump diode. But it
should be judged by the divided output level finally.
Fig.2-2-11 VOT output circuit in the case with high protection level
Ref
VOT
Temperature
signal
VNC
Inside LVIC
of DIPIPM
MCU
Ref
VOT
VNC
MCU
R1
R2
DVOT
DVOT=VOT·R2/(R1+R2) R1+R2≈5.1kΩ
Temperature
si
g
nal
Inside LVIC
of DIPIPM

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
17
2.64
2.51
2.76
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
-30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
VOT outp ut (V)_
LVIC temperature (°C)
Typ.Max. Min.
Outputrangewithout5kΩpulldownresistor
(Outputmightbesaturatedunderthislevel.)
 Outputrangewith5kΩpulldownresistor
(Outputmightbesaturatedunderthislevel.)
Fig.2-2-12 VOT output vs. LVIC temperature
(3) Usage of VOT function
As mentioned above, the heat of power chips transfers to LVIC through the heat sink and package, so the
relationship between LVIC temperature: Tic(=VOT output), case temperature: Tc(under the chip defined on
datasheet), and junction temperature: Tj depends on the system cooling condition, heat sink, control strategy,
etc. For example of PSSxxS72FT, their relationship example in the case of using the heat sink (Table 2-2-7) is
described in Fig.2-2-13. This relationship may be different due to the cooling conditions. So when setting the
threshold temperature for protection, it is necessary to get the relationship between them on your real system.
And when setting threshold temperature Tic, it is important to consider the protection temperature keeps
Tj 150°C.

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
18
Table 2-2-7 Outer heat sink
Heat sink size
( W x D x H )
200 x 85 x 40 mm
0
20
40
60
80
100
120
140
10 15 20 25 30 35 40 45 50 55 60
Temperature[°C]
Loss [W]
Tj
Tc
Tic
Fig.2-2-13 Example of relationship of Tj, Tc, Tic
(One IGBT chip turns on. DC current Ta=25°C)
Procedure about setting the protection level by using Fig.2-2-14 is described as below.
Table 2-2-8 Procedure for setting protection level
Procedure Setting value example
1) Set the protection Tj temperature Set Tj to 135°C as protection level.
2)
Get LVIC temperature Tic that matches to above Tj
of the protection level from the relationship of Tj-Tic
in Fig.2-2-14.
Tic=85°C (@Tj=135°C)
3)
Get VOT value from the VOT output characteristics in
Fig.2-2-15 and the Tic value which was obtained at
phase 2) .
VOT=2.64V (@Tic=85°C) is decided as the
protection level.
As above procedure, the setting value for VOT output is decided to 2.64V. But VOT output has some data
spread, so it is important to confirm whether the protection temperature fluctuation of Tj is not Tj>150°C due
to the data spread of VOT output. Procedure about the confirmation of temperature fluctuation is described in
Table 2-2-9.
Table 2-2-9 Procedure for confirmation of temperature fluctuation
Procedure Confirmation example
4) Confirm the region of Tic fluctuation at above VOT
from Fig.2-2-15.
Tic=80°C~90°C (@VOT=2.64V)
5) Confirm the region of Tj fluctuation at above region
of Tic from Fig.2-2-14.
Tj=117°C~147°C (≤150°C No problem)
In this case, fluctuation of Tc is
Tc=100°C~120°C
D
W
H

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
19
50
60
70
80
90
100
110
120
130
140
150
30 35 40 45 50 55 60
Temperature[°C]
Loss [W]
Tj
Tic
2) 85℃
5) Tc: 100℃~120℃
5) Tj: 117℃~147℃
4) 80℃
4) 90℃
1) 135℃
Tc
Fig.2-2-14 Relationship of Tj, Tc, Tic(Enlarged graph of Fig.2-2-13)
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
70 80 90 100
VOT outp ut (V)_
LVIC temperature (°C)
Typ.
Max
Min.
4)80℃
3) 2.64V
4) 90℃
2) 85℃
Fig.2-2-15 VOT output vs. LVIC temperature (Enlarged graph of Fig.2-2-12)
The relationship between Tic, Tc(measuring) and Tj(calculated by loss) depends on the system
cooling condition and control strategy, and so on. So please evaluate about these temperature
relationship on your real system when considering the protection level.
If necessary, it is possible to ship the sample with the individual data of VOT vs. LVIC temperature.

<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
20
2.3 Package Outlines
2.3.1 Package outlines
QR Code is registered trademark of DENSO WAVE INCORPORATED in JAPAN and other countries.
Fig.2-3-1 PSSxxS72FT package outline drawing (Dimension in mm)