Panasonic MA22D39 User manual

Schottky Barrier Diodes (SBD)
Publication date: February 2008 SKH00141CED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA22D39
Silicon epitaxial planar type
For high speed switching circuits
Features
Optimum for forward current (Effective value) IF(RMS) = 1.57 A rectification
Reverse voltage VR= 40 V is guaranteed
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR40 V
Maximum peak reverse voltage VRM 40 V
Forward current (Effective value) *1IF(RMS) 1.57 A
Non-repetitive peak forward surge current
*2IFSM 30 A
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
VF1 IF= 0.5 A 0.48
V
VF2 IF= 1.1 A 0.54
VF3 IF= 1.5 A 0.57
Reverse current IRVR= 40 V 100 mA
Terminal capacitance CtVR= 10 V, f = 1 MHz 50 pF
Reverse recovery time *trr
IF= IR= 100 mA, Irr = 10 mA,
RL= 100 W30 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: 3N

MA22D39
2SKH00141CED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVR PR(AV) VR
PF(AV) IF(AV) IF(AV) T1
0 0.5 1.0 1.5
102
10
1
10−1
10−2
10−3
10−4
MA22D39_ IF-VF
Forward current IF(A)
Forward voltage VF(V)
Ta= 90°C
−40°C
25°C
0 10 403020 50
10−3
10−4
10−5
10−6
10−7
10−8
10−9
MA22D39_ IR-VR
Reverse current IR(A)
Reverse voltage VR(V)
−40°C
25°C
Ta= 90°C
0
1
2
3
0 10 20 30 40 50
Reverse voltage VR(V)
Reverse power dissipation (Average) PR(AV) (W)
MA22D23_PR(AV)-VR
DC
300°
240°
180°
θ
360°
IF
0
0.2
0.4
0.6
1.0
0.8
1.2
0 0.4 2.01.61.2 0.8
Forward current (Average) IF(AV) (A)
Forward power dissipation (Average) PF(AV) (W)
DC
180°
120°
60°
θ
360°
IF
0
0.5
1.0
1.5
2.0
0 40 160120 80
Lead temperature Tl(°C)
Forward current (Average) IF(AV) (A)
tP/T
DC
0.5
0.2
0.1
VR= 15 V
Tj= 150°C
tp
T
IF

MA22D39
SKH00141CED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
0.80 ±0.05
Mini2-F1 Unit: mm
1.6 ±0.1
1
2
0 to 0.3
0.45 ±0.1
5°
2.6 ±0.1 3.5 ±0.1
0.16
0 to 0.1
5°
0 to 0.1
0.55 ±0.1
+0.1
−0.06

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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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