Panasonic MA2S7840G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00175AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2S7840G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•High-density mounting is possible
•Forward current (Average) IF(AV) =100 mA rectification is possible
•Optimum for high frequency rectification because of its short
reverse recovery time trr
•Low forward voltage VFand good rectification efficiency
■Absolute Maximum Ratings Ta=25°C
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Repetitive peak reverse voltage VRRM 30 V
Forward current (Average) IF(AV) 100 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 0.55 V
Reverse current IRVR=30 V 15 µA
Terminal capacitance CtVR=0 V, f =1 MHz 20 pF
Reverse recovery time *trr IF=IR=100 mA 2.0 ns
Irr =0.1 IR , RL=100 Ω
■Electrical Characteristics Ta=25°C±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F
=100 mA
I
R
=100 mA
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *:t
rr measurement circuit
■Package
•Code
SSMini2-F4
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: C

2
MA2S7840G
SKH00175AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10−2
0 0.2 0.4 0.6 0.8
10−1
1
10
102
103
Forward voltage VF(V)
Forward current IF(mA)
Ta=125°C
75°C
25°C
−20°C
10
−1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=100 mA
10 mA
3 mA
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R
=30 V
3 V
1 V
0
24
20
16
12
8
4
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f =1 MHz
T
a
=25°C
0
20
40
60
120
100
80
140
0
DC
40 16012080
T
j
=125°C
Ambient temperature T
a
(°C)
Forward current (Average) I
F(AV)
(mA)
t
p
T
I
F
IF(AV) Ta

MA2S7840G
3
SKH00175AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini2-F4 Unit: mm
0.30 ±0.05
0.80
+0.05
−0.03
2
1
0.60
+0.05
−0.03
5°
(0.15)
0.13
+0.05
−0.02
1.60
±0.05
1.20
+0.05
−0.03
0 to 0.05
0.20
±0.05
5°

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semiconductors described in this book
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