Panasonic MA2SP050G User manual

1
Publication date: October 2007 SKL00030AED
PIN diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2SP050G
Silicon epitaxial planar type
For high frequency attenuator
■Features
•High performance forward current IFcontrolled forward dy-
namic resistance rf
•Small terminal capacitance Ct
•Miniature package and surface mounting type
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF50 mA
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=10 mA 1.0 V
Reverse current IRVR=60 V 100 nA
Terminal capacitance CtVR=0 V, f =1 MHz 2.4 pF
Forward dynamic resistance rfIF=10 mA, f =100 MHz 5.5 Ω
■Electrical Characteristics Ta=25°C ±3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
■Package
•Code
SSMini2-F4
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 6P

MA2SP050G
2SKL00030AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRCtVR
rfIF
10−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10−1
1
10
102
103
Forward voltage VF(V)
Forward current IF(mA)
Ta= 150°C−20°C
25°C
100°C

10−4
020 6040
10−3
10−2
10−1
1
10
102
103
104
Reverse voltage VR(V)
Reverse current IR(nA)
Ta= 150°C
25°C
100°C
0
0
0.2
0.4
0.6
0.8
20 40 60
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f = 1 MHz
Ta= 25°C
10
−2
1
10
10
2
10
3
10
−1
110
Forward current I
F
(mA)
Forward dynamic resistance r
f
(Ω)
f = 100 MHz
T
a
= 25°C

MA2SP050G
3
SKL00030AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini2-F4 Unit: mm
0.30 ±0.05
0.80
+0.05
−0.03
2
1
0.60
+0.05
−0.03
5°
(0.15)
0.13
+0.05
−0.02
1.60
±0.05
1.20
+0.05
−0.03
0 to 0.05
0.20
±0.05
5°

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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