Panasonic MA2SP02 User manual

1
Publication date: March 2004 SKL00011BED
PIN diodes
MA2SP02
Silicon epitaxial planar type
For high frequency switch
■Features
•Small terminal capacitance Ct
•Small forward dynamic resistance rf
•Miniature package and surface mounting type
■Absolute Maximum Ratings Ta=25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Power dissipation PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °CMarking Symbol: 3P
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
0.80+0.05
–0.03
0.60+0.05
–0.03
0.12+0.05
–0.02
1.20+0.05
–0.03
0+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=10 mA 1.0 V
Reverse current IRVR=60 V 100 nA
Terminal capacitance CtVR=1 V, f =1 MHz 0.5 pF
Forward dynamic resistance rfIF=10 mA, f =100 MHz 2.0 Ω
■Electrical Characteristics Ta=25°C ±3°C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
This product complies with the RoHS Directive (EU 2002/95/EC).

MA2SP02
2SKL00011BED
IFVFIRVRCtVR
rfIF
10−2
0 0.2 0.4 0.6 0.8 1.0 1.2
10−1
1
10
102
103
Forward voltage VF(V)
Forward current IF(mA)
Ta= 150°C
−20°C
25°C
100°C

10
−4
020 6040
10
−3
10
−2
10
−1
1
10
10
2
10
3
Reverse voltage VR(V)
Reverse current IR(nA)
T
a
= 150°C
25°C
100°C
0
0
0.2
0.4
0.6
1.0
0.8
10 20 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
Ta= 25°C
10
−1
10
−2
1
10
10
2
10
3
10
−1
110
Forward current IF(mA)
Forward dynamic resistance r
f
(Ω)
f = 100 MHz
T
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
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