Panasonic MA3S132DG User manual

Switching Diodes
1
Publication date: October 2007 SKF00083AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Note) *:t=1 s
MA3S132DG, MA3S132EG
Silicon epitaxial planar type
For switching circuits
■Features
•Short reverse recovery time trr
•Small terminal capacitance Ct
•Two isolated elements contained in one package, allowing high-
density mounting
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 1.2 V
Reverse voltage VRIR=100 µA80V
Reverse current IRVR=75 V 100 nA
Terminal capacitance MA3S132DG CtVR=0 V, f =1 MHz 15 pF
MA3S132EG 2
Reverse recovery time * MA3S132DG trr IF=10 mA, VR=6 V 10 ns
MA3S132EG Irr =0.1 IR , RL=100 Ω3
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 10 mA
VR= 6 V
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
12
3
1
3
2
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 150
Peak forward Single IFM 225 mA
current Double 340
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 750
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
DE
■Package
•Code
SSMini3-F3
•Pin Name
MA3S132DG MA3S132EG
1: Cathode 1 1: Anode 1
2: Cathode 2 2: Anode 2
3: Anode 3: Cathode
■Marking Symbol
MA3S132DG: MO
MA3S132EG: MU
■Internal Connection

3
MA3S132DG, MA3S132EG
SKF00083AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
Characteristics charts of MA3S132DG
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a = 150°C
100°C
25°C
−20°C
10 −1
0 20 40 60 80 100 120
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
T
a = 150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 100 mA
10 mA
3 mA
10 −1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature Ta(°C)
Reverse current IR(nA)
V
R = 75 V
35 V
6 V
0
2
4
6
8
0 20 40 60 80 100 120
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f = 1 MHz
Ta= 25°C
10 −1
1
10
102
103
10110 −1
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
Non repetitive
IF(surge)
Ta= 25°C

MA3S132DG, MA3S132EG
3
SKF00083AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Characteristics charts of MA3S132EG
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
= 150°C
100°C
25°C
−20°C
1
0 20 40 60 80 100 120
10
10
2
10
3
10
4
10
5
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
T
a = 150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 100 mA
10 mA
3 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(nA)
V
R = 75 V
35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0 20406080100120
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f = 1 MHz
Ta= 25°C
10 −1
1
10
102
103
10110 −1
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
Non repetitive
IF(surge)
Ta= 25°C

4
MA3S132DG, MA3S132EG
SKF00083AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05
−0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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