Panasonic MA2Z7850G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00188AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2Z7850G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•High-density mounting is possible
•Forward current (Average) IF(AV) =100 mA rectification is
possible
•Optimum for high frequency rectification because of its short
reverse recovery time trr
•Low forward voltage VFand good rectification efficiency
•Reverse voltage VR=50 V is guaranteed
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR50 V
Repetitive peak reverse voltage VRRM 50 V
Forward current (Average) IF(AV) 100 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 0.55 V
Reverse current IRVR=50 V 30 µA
Terminal capacitance CtVR=0 V, f =1 MHz 25 pF
Reverse recovery time *trr IF=IR=100 mA 3.0 ns
Irr =0.1 IR, RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F
=100 mA
I
R
=100 mA
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 200 MHz. 4. *: trr measurement circuit
■Package
•Code
SMini2-F3
•Pin Name
1: Anode
2: Cathode
■Marking Symbol: 2E

2
MA2Z7850G
SKH00188AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.2 0.4 0.6
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
=125°C
75°C
25°C
−20°C
10
−1
0 102030405060
1
10
10
2
10
3
10
4
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F
=100 mA
10 mA
3 mA
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R
=50 V
30 V
5 V
0
20
40
60
0204060
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
IF(AV) Ta
0
20
40
60
120
100
80
140
0
DC
40 16012080
T
j
=125°C
Ambient temperature T
a
(°C)
Forward current (Average) I
F(AV)
(mA)
t
p
T
I
F

MA2Z7850G
3
SKH00188AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini2-F3 Unit: mm
1.25 ±0.10
0.13
+0.05
−0.02
0.50 ±0.05
2
1
0.35 ±0.05
0.7
±0.1
5°
(0.15)
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.05
5°

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semiconductors described in this book
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