Panasonic MAZWxxxH Series User manual

Zener Diodes
1
Publication date: October 2008 SKE00019BED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZWxxxH Series
Silicon planar type
For surge absorption circuit
■Features
•Two elements anode-common type
•SSSMini type 3-pin package
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Total power dissipation *PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Common Electrical Characteristics Ta= 25°C ±3°C
Note) *:P
T= 150 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage *VZIZSpecified value V
Zener rise operating resistance RZK IZSpecified value Ω
Zener operating resistance RZIZSpecified value Ω
Reverse current IRVRSpecified value µA
Refer to the list of the
electrical characteristics
within part numbers
1
3
2
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C =150 pF, R =330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZmesurement.
VZvalue measured at other temperature must be adjusted to VZ(25°C)
VZguaranted 20 ms after current flow.
■Package
•Code
SSSMini3-F1
•Pin Name
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
■Internal Connection

MAZWxxxH Series
SKE00019BED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZW068H 6.4 6.8 7.2 5 0.1 4 30 60 68
MAZW082H 7.7 8.2 8.7 5 0.1 5 30 60 82
■Electrical characteristics within part numbers Ta= 25°C ±3°C
VZ(V) IR (µA) RZ (Ω)R
ZK (Ω)
IZVR I
Z
=5 mA I
Z
=0.5 mA
Min Nom Max (mA) Max (V) Max Max
Part number Marking symbol
Note) 1. The VZvalue is the one after power application for 20 ms at Ta=25°C.
2. The zener voltage temperature coefficient is the one for Tj=25°C to 150°C.
Zener voltage Zener operating
resistance
Reverse current
(DC)
PTTaIZVZIFVF
RZIZSZIZCtVR
10
−3
468101214
10
−2
10
−1
1
10
10
2
Zener voltage VZ(V)
Zener current IZ(mA)
T
a = 25°C
MAZW082H MAZW068H
0
020
0
1601208040
50
100
150
200
250
Ambient temperature Ta(°C)
Total power dissipation PT(mW)
Print foil
t =0.035 mm
K
A
10 mm
0.8 mm
10 mm
10
−2
0 0.2 0.4 0.6 1.00.8 1.
2
10
−1
1
10
10
2
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a = 25°C
10
−1
1
10
10
2
Zener operating resistance R
Z
(Ω)
11010
2
Zener current I
Z
(mA)
T
a = 25°C
MAZW082H
MAZW068H
0
12
10
8
6
4
2
0 10203040506
0
Zener current I
Z
(mA)
Temperature coefficient of zener voltage
S
Z
(mV / °C)
T
a = 25°C to 150°C
MAZW082H
MAZW068H
0
10
0
20
4812
30
Terminal capacitance C
t
(pF)
Reverse voltage V
R
(V)
T
a = 25°C
MAZW068H
MAZW082H

MAZWxxxH Series
3
SKE00019BED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F1 Unit: mm
0.80±0.05
(0.40) (0.40)
0.33
1.20±0.05 0.80±0.05
0.23
1.20±0.05
3
12
0.15 max.
5°
0 to 0.01
5°
0.10
0.15 min.
0.52±0.03
0.15 min.
+0.05
−0.02
+0.05
−0.02
+0.05
−0.02

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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