Panasonic 2SA2028 User manual

Transistors
1
Publication date: March 2003 SJC00042BED
2SA2028
Silicon PNP epitaxial planar type
For DC-DC converter
■Features
•Low collector-emitter saturation voltage VCE(sat)
•High-speed switching
•S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −20 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−1A
Peak collector current ICP −3A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −20 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −20 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Forward current transfer ratio hFE VCE = −2 V, IC= −100 mA 160 560 
Collector-emitter saturation voltage VCE(sat) IC=−200 mA, IB=−10 mA −40 −100 mV
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 170 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 20 30 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: AT
2.1
±0.1
1.3 ±0.1
0.3
+0.1
–0.0
2.0 ±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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