Panasonic MANV250GE User manual

Zener Diodes
Publication date: October 2005 SKE00038AED 1
MANV250GE
Silicon planar type
For surge protect
Features
Large surge reduction power
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Peak pulse power *1PPP 450 W
Peak pulse current *1IPP 9 A
Maximum peak reverse voltage VRM 18 V
Total power dissipation *2PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrostatic discharge *3ESD ±30 kV
Note) *1: Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: PT= 150 mW achieved with a printed circuit board.
*3: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage *1VBR IR= 1 mA 20.0 25.0 30.0 V
Reverse current IRVR= 18 V 10.0 mA
Clamping voltage *2VCIPP = 9.0 A, tp = 8/20 ms 50.0 V
Terminal capacitance CtIR= 0 V, f = 1 MHz 76 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: VZguaranted 20 ms after current flow.
*2: Pulse Waveform
100
90
50
10
T2
Tt
T1
Percent of I
PP
Front time:
T1 = 1.25 ×T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Package
Code
SMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: RD

MANV250GE
2SKE00038AED
IFVFIRVRIZVZ
CtVR
10−4
0 0.8 1.00.4 0.60.2 1.6 1.81.2 1.4 2.0
10−2
10−1
1
10
10−3
102
Forward current IF(mA)
Ta=25°C
MANV250GE_IF-VF
Forward voltage VF(V)
10−7
10−6
0 4 62 128 10 2016 1814
10−5
10−3
10−4
Ta=25°C
Reverse current IR(µA)
MANV250GE_IR-VR
Reverse voltage VR(V)
10−6
10−5
10−3
10−4
10−1
10−2
5 10 15 25 30 3520 40
1
Zener current IZ(A)
Ta=25°C
MANV250GE_IZ-VZ
Zener voltage VZ(V)
100 5 1510 20
100
Terminal capacitance Ct(pF)
Ta=25°C
f =1 MHz
MANV250GE_Ct-VR
Reverse voltage VR(V)

MANV250GE
SKE00038AED 3
SMini2-F3 Unit: mm
1.25 ±0.10
0.13 +0.05 −0.02
0.50 ±0.05
2
1
0.35 ±0.05
0.7 ±0.1
5°
(0.15)
2.5 ±0.2 1.7 ±0.10.4 ±0.1
0 to 0.05
5°

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semiconductors described in this book
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