Panasonic MAS3795E User manual

Schottky Barrier Diodes (SBD)
1
Publication date: June 2002 SKH00118AED
MAS3795E
Silicon epitaxial planar type
For high-speed switching circuits
■Features
•High-density mounting is possible
•Optimum for high frequency rectification because of its short
reverse recovery time (trr)
•Low forward voltage VFoptimum for low voltage rectification
VF=<0.3 V (at IF=1 mA)
•SSS-Mini type 3-pin package
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) VR30 V
Peak reverse voltage VRM 30 V
Forward current (DC) Single IF30 mA
Double 20
Peak forward current Single IFM 150 mA
Double 110
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta=25°C ±3°C
Internal Connection
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) IRVR=30 V 30 µA
Forward voltage (DC) VF1 IF=1 mA 0.3 V
VF2 IF=30 mA 1.0
Terminal capacitance CtVR=1 V, f =1 MHz 1.5 pF
Reverse recovery time *trr IF=IR=10 mA 1.0 ns
Irr =1 mA, RL=100 Ω
Detection efficiency ηVin =3 V(peak) , f =30 MHz 65 %
RL=3.9 kΩ, CL=10 pF
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F
=10 mA
I
R
=10 mA
R
L
=100 Ω
10%
Input Pulse Output Pulse
I
rr
=1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5°
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5°
0.80±0.05
1.20±0.05
+0.05
–0.02 0.10+0.05
–0.02
0.23+0.05
–0.02
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
Marking Symbol: M3
12
3
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MAS3795E
SKH00118AED
10
−2
0 0.4 0.8 1.2 1.6 2.0 2.4
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a
=125°C–20°C
75°C 25°C
10
−1
0 5 10 15 20 25 30
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(µA)
T
a
=125°C
75°C
25°C
0
0.2
0.4
0.6
0.8
1.0
−40 0 40 80 120 160 200
Ambient temperature Ta(°C)
Forward voltage V
F
(V)
I
F
=30 mA
10 mA
1 mA
10
−1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature Ta(°C)
Reverse current IR(µA)
V
R
=25 V
3 V
1 V
0
3.0
2.5
2.0
1.5
1.0
0.5
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f =1 MHz
Ta=25°C
IRTaCtVR
IFVFIRVRVFTa
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
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–Any applications other than the standard applications intended.
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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