Panasonic 2SA1018 User manual

Transistors
1
Publication date: January 2003 SJC00008BED
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
■Features
•High collector-emitter voltage (Base open) VCEO
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −250 V
Collector-emitter voltage (Base open) VCEO −200 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−70 mA
Peak collector current ICP −100 mA
Collector power dissipation PC750 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −200 V
Emitter-base voltage (Collector open) VEBO IE=−1 µA, IC=0 −5V
Collector-emitter cut-off current (Base open) ICEO VCE =−120 V, IB=0 −1µA
Forward current transfer ratio *hFE VCE = −10 V, IC= −5 mA 60 220 
Collector-emitter saturation voltage VCE(sat) IC=−50 mA, IB=−5 mA −1.5 V
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 50 MHz
Collector output capacitance Cob VCB = −10 V, IE=0, f =1 MHz 10 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0 ±0.2
0.7 ±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0 ±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Rank Q R
hFE 60 to 150 100 to 220
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1018
2SJC00008BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB ICEO Ta
0 16040 12080 14020 10060
0
1 000
800
600
400
200
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−12−10−8−2−6−4
0
−100
−80
−60
−40
−20
T
a
=25°C
−0.2 mA
−0.1 mA
−0.3 mA
−0.4 mA
−0.5 mA
−0.6 mA
−0.7 mA
−0.8 mA
−0.9 mA
I
B
=−1.0 mA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0−2.0−1.6−0.4 −1.2−0.8
0
−120
−100
−80
−60
−40
−20
V
CE
=−10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
−0.1 −1−10 −100
−0.01
−0.1
−1
−10
−100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−0.1 −1−10 −100
0
300
250
200
150
100
50
V
CE
=−10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
0.1 1 10 100
0
120
100
80
60
40
20
V
CB
=−10 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
−1−10 −100
0
20
16
12
8
4
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
0 24020016040 12080
1
10
100
1 000
10 000 VCE =−120 V
Ambient temperature Ta(°C)
ICEO (Ta)
ICEO (Ta=25°C)
This product complies with the RoHS Directive (EU 2002/95/EC).

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