Panasonic 2SC4627G User manual

1
Transistors
Publication date: June 2007 SJC00391AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627G
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=030V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Base-emitter voltage VBE VCB =6 V, IE=−1 mA 720 mV
Forward current transfer ratio *hFE VCB =6 V, IE=−1 mA 65 160 
Transition frequency fTVCB =6 V, IE=−1 mA, f =200 MHz 450 650 MHz
Reverse transfer capacitance Cre VCB =6 V, IE=−1 mA, f =10.7 MHz 0.8 1.0 pF
(Common emitter)
Power gain PG VCB =6 V, IE=−1 mA, f =100 MHz 24 dB
Noise figure NF VCB =6 V, IE=−1 mA, f =100 MHz 3.3 dB
■Electrical Characteristics Ta=25°C ±3°C
Rank C
hFE 65 to 160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
■Package
•Code
SSMini3-F3
•Marking Symbol: U
•Pin Name
1. Base
2. Emitter
3. Collector

2SC4627G
2SJC00391AED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE VCE(sat) IChFE IC
PCTaICVCE ICIB
Cob VCB
0 16040 12080
0
150
125
100
75
50
25
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0128416
0
12
10
8
6
4
2
T
a
=25°C
I
B
=100 µA
80 µA
60 µA
40 µA
20 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 18015012030 9060
0
12
10
8
6
4
2
VCE =6 V
Ta=25°C
Base current IB(µA)
Collector current IC(mA)
0 1.21.00.80.2 0.60.4
0
60
50
40
30
20
10
VCE =6 V
Ta=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.001
0.01
0.1
1
10
Ta=75°C
25°C
−25°C
IC/ IB=10
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
1 10 100 1 000
0
120
100
80
60
40
20
V
CE
=6 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1 10 100
0
3.0
2.5
2.0
1.5
1.0
0.5
f =1 MHz
IE=0
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)

This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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