Panasonic 2SC3311A User manual

Transistors
1
Publication date: March 2003 SJC00127BED
2SC3311A
Silicon NPN epitaxial planar type
For low-frequency amplification
Complementary to 2SA1309A
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=060V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=050V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=07V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =10 V, IB=01µA
Forward current transfer ratio *hFE VCE =10 V, IC=2 mA 160 460 
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 0.1 0.3 V
Transition frequency fTVCB =10 V, IE=−2 mA, f =200 MHz 150 MHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 3.5 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q R S No-rank
hFE 160 to 260 210 to 340 290 to 460 160 to 460
Product of no-rank is not classified and have no indication for rank.
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3311A
2SJC00127BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB NV IC
0 16040 12080
0
500
400
300
200
100
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
60
50
40
30
20
10
Ta=25°C
140 µA
120 µA
100 µA
20 µA
40 µA
60 µA
80 µA
IB=160 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
02.01.60.4 1.20.8
0
200
160
120
80
40
VCE =10 V
Ta=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
600
500
400
300
200
100
V
CE
=10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
300
250
200
150
100
50
V
CE
=10 V
f =100 MHz
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
10
8
6
4
2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
10 100 1 000
0
240
200
160
120
80
40
V
CE
=10 V
Function =FLAT
T
a
=25°C
4.7 kΩ
R
g
=100 kΩ
20 kΩ
Noise voltage NV (mV)
Collector current I
C
(µA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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