Panasonic 2SA2009G User manual

Transistors
1
Publication date: April 2007 SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −120 V
Collector-emitter voltage (Base open) VCEO −120 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−20 mA
Peak collector current ICP −50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −120 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −120 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−50 V, IE=0 −100 nA
Collector-emitter cutoff current (Base open) ICEO VCE =−50 V, IB=0 −1µA
Forward current transfer ratio *hFE VCE = −5 V, IC= −2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC=−20 mA, IB=−2 mA −0.6 V
Transition frequency fTVCB =−5 V, IE=2 mA, f =200 MHz 200 MHz
Noise voltage NV VCE = −40 V, IC= −1 mA, GV= 80 dB 130 mV
Rg= 100 kΩ, Function = FLAT
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
■Package
•Code
SMini3-F2
•Marking Symbol: AR
•Pin Name
1. Base
2. Emitter
3. Collector

2SA2009G
2SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
016
0
40 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−1
2
−10−8−2−6−4
0
−60
−50
−40
−30
−20
−10
Ta=25°C
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
IB=−300 µA
Collector current IC(mA)
Collector-emitter voltage V
CE
(V)
0−1.
4
−1.2−1.0−0.8−0.2 −0.6−0.4
0
−30
−25
−20
−15
−10
−5
V
CE
=−5 V
T
a
=85°C
−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
−0.1 −1−10 −100
−0.01
− 0.1
−1I
C
/ I
B
=10
T
a
=85°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−1−10 −10
0
0
500
400
450
350
300
250
200
150
100
50
V
CE
=−5 V
T
a
=85°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −10
0
0
10
8
6
4
2
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)

This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.13 +0.05 −0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12

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