Panasonic Transistors 2SC5846 User manual

Transistors
1
Publication date: August 2003 SJC00298AED
2SC5846
Silicon NPN epitaxial planar type
For general amplification
■Features
•High forward current transfer ratio hFE
•SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µΑ, IE=060V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=050V
Emitter-base voltage (Collector open) VEBO IE=10 µΑ, IC=07V
Collector-base cutoff current (Emitter open) ICBO VCB =20 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =10 V, IB=0 100 µA
Forward current transfer ratio hFE VCE =10 V, IC=2 mA 180 390 
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 0.1 0.3 V
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 2.2 pF
(Common base, input open circuited)
Transition frequency fTVCB =10 V, IE=−2 mA, f = 200 MHz 100 MHz
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Marking Symbol: 7K
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02 0.10+0.05
–0.02
0.23+0.05
–0.02
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
SSSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC5846
2SJC00298AED
ICVBE IBVBE VCE(sat) IC
PCTaICVCE ICIB
hFE ICCob VCB
0 20 40 60 80 100 120 140
0
120
80
100
60
40
20
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
042681012
0
50
40
30
20
10
Collector current IC(mA)
Collector-emitter voltage VCE (V)
IB=160 µA
140 µA
100 µA
80 µA
60 µA
40 µA
20 µA
120 µA
Ta=25°C
0 0.2 0.4 0.6 0.8 1.0
0
140
120
100
80
60
40
20
Collector current I
C
(mA)
Base current I
B
(mA)
V
CE
=10V
T
a
=25°C
0 0.2 0.4 0.6 0.8 1.0 1.2
0
20
40
60
80
100
120
Collector current IC(mA)
Base-emitter voltage VBE (V)
VCE =10V
Ta=75°C–25°C
25°C
0 0.2 0.4 0.6 0.8
0
3.5
0.5
1.0
1.5
2.0
2.5
3.0
Base current IB(mA)
Base-emitter voltage VBE (V)
V
CE
=10V
T
a
=25°C
1 10 100
0.01
0.1
1
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
Ta=75°C
–25°C
25°C
IC / IB=10
1 10 100 1 000
0
50
100
150
200
250
300
350
Collector current IC(mA)
Forward current transfer ratio hFE
T
a
=75°C
–25°C
25°C
V
CE
=10V
0168243240
1
10
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
f =1 MHz
T
a
=25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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