Philips SA631 User manual



SA631
1GHz low voltage LNA and mixer
Product specification
IC17 Data Handbook
1998 Jan 08
INTEGRATED CIRCUITS

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
2
1998 Jan 08 853–2045 18847
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
FEATURES
•Low current consumption
•Outstanding gain and noise figure
•Excellent gain stability versus temperature and supply voltage
•LNA and mixer power down capability
•Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
•900MHz cellular and cordless front-end
•Spread spectrum receivers
•RF data links
•UHF frequency conversion
•Portable radio
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10 11
12
13
14
20
19
18
17
16
15
GND
LNA OUT
VCC
LNA IN
GND
GND
MIXER IN
MIXER OUT
MIXER OUT
GND
GND
GND
GND
GND
GND
GND
LO OUT
PD2
PD1
GND
SR00124
Figure 1. Pin Configuration
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Shrink Small Outline Package (Surface-mount, SSOP) –40 to +85°CSA631DK SOT266-1
BLOCK DIAGRAM
43215
20 19 18 17 16
761098
15 14 13 12 11
LO GND GND
GND VCC
LNA
IN GND
MIXER
IN
MIXER
OUT
MIXER
OUT
PD1 PD2 GND
LNA
OUT
GND
OUT
GND
GND
LNA
GND
GND GND
SR01588
Figure 2. SA631 Block Diagram

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 3
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage1–0.3 to +6 V
VIN Voltage applied to any other pin –0.3 to (VCC + 0.3) V
PDPower dissipation, Tamb = 25°C (still air)2
20-Pin Plastic SSOP 980 mW
TJMAX Maximum operating junction temperature 150 °C
PMAX Maximum power input/output +20 dBm
TSTG Storage temperature range –65 to +150 °C
NOTES:
1. Transients exceeding 8V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage 2.7 to 5.5 V
Tamb Operating ambient temperature range –40 to +85 °C
TJOperating junction temperature –40 to +105 °C
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25°C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNITS
Full power-on 8.3 mA
ICC Supply current LNA powered-down 5.2 mA
Full power-down 20 µA
VTPD logic threshold voltage 1.2 1.6 1.8 V
VIH Logic 1 level 2.0 VCC V
VIL Logic 0 level –0.3 0.8 V
IIL PD1 input current Enable = 0.4V 10 µA
IIH PD2 input current Enable = 2.4V 10 µA

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 4
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
–3TYP +3
UNITS
Low Noise Amplifier
fRF RF input frequency range 800 1000 MHz
S21 Amplifier gain 15 dB
S21 Amplifier gain in power-down mode –28 dB
∆S21/∆TGain temperature sensitivity enabled 0.006 dB/°C
∆S21/∆fGain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz
S12 Amplifier reverse isolation @ 881 MHz –28 dB
S11 Amplifier input match With ext. impedance matching –10 dB
S22 Amplifier output match –10 dB
P-1dB Amplifier input 1dB gain compression –20 dBm
IP3 Amplifier input third order intercept –7 dBm
NF Amplifier noise figure 1.7 dB
tON Amplifier turn-on time (Enable Lo →Hi) 120 µs
tOFF Amplifier turn-off time (Enable Hi →Lo) 0.3 µs
Mixer
PGCMixer power conversion gain: RP= RL= 1.2kΩfRF = 881MHz, fLO = 964MHz,
fIF = 83MHz 9.6 dB
S11M Mixer input match Ext. impedance matching req. –10 dB
NFMMixer SSB noise figure 10 dB
P-1dB Mixer input 1dB gain compression –14.5 dBm
IP3MMixer input third order intercept 3.3 dBm
IP2INT Mixer input second order intercept 38 dBm
PRFM-IF Mixer RF feedthrough RFIN = –32dBm –45 dBm
PLO-IF LO feedthrough to IF LO = –0dBm –23 dBm
PLO-RFM LO to mixer input feedthrough –32 dBm
PLO-RF LO to LNA input feedthrough –42 dBm
Overall System
GSYS System gain LNA + Mixer 23.9 24.6 25.3 dB

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 5
Table 1. Power ON/OFF Control Logic
PD1 PD2
0 0 Full chip power-down
01 or open Mixer on, LNA power-down
1 or open 0Standby (bias on)
1 or open 1 or open Full chip power-on (default)
SR01589
+
–
20 19 18 17 16 15 14 13 12 11
1234 5678910
PD1 PD2 GND GND GND GND GND GND GND
MIXER GND GND GND GND
VCC
LOOUT
IFOUT
VCOOUT
SA631
C3
6.8pF L4
560n
C15 10nF
C14
6.8pF C13
33pF
C8
10nF 3V
C12
100pF
C1
100pF
VCC
OUT MIXER OUT MIXER IN LNA IN LNA OUT
L3
6.8nH
10nF
0.1µF
C9
C11
L6
12nH
C10
2.2pF
10pF
C16
10pF
L1
560nH
C2
Figure 3. SA631 Application Circuit

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 6
PERFORMANCE CHARACTERISTICS
85°C25°C
–15
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA 1dB (dBm)
–40°C
25°C
LNA 1dB Compression vs VCC
–16
–17
–18
–19
–20
–21
–22
–23
–24
–25
-14.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER 1dB (dBm)
-40°C
Mixer 1dB Compression vs VCC
-14.5
-15.0
-15.5
-16.0
-13.0
-13.5
-28.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA GAIN (dB)
-40°C
25°C
85°C
LNA Gain (Disabled) vs VCC
-28.5
-29.0
-29.5
-30.0
-30.5
-31.0
-27.0
-27.5
6.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER IP3 (dBm)
-40°C
25°C
85°C
Mixer IP3 vs VCC
5.0
4.0
3.0
2.0
1.0
0.0
–1.0
–2.0
-11
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA IP3 (dBm)
–40°C
25°C
LNA IP3 vs VCC
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
85°C
85°C
SR01590
-12
–3.0
–4.0
Figure 4.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 7
PERFORMANCE CHARACTERISTICS
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Icc (mA)
-40°C
25°C
85°C
ICC vs VCC and Temperature
8.2
7.8
7.4
7.0
6.6
6.2
5.8
9.8
9.4
9.0
8.6
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER GAIN (dB)
-40°C
85°C
Mixer Power Gain vs VCC
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to LNA IN (dBm)
-40°C
25°C
85°C
LO to LNA In Feedthrough vs VCC
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to MIXER IN (dBm)
-40°C
LO to Mixer In Feedthrough vs VCC
–39
–40
–41
–42
–43
–44
–45
–46
–47
–48
–49
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to IF (dBm)
-40°C
25°C
85°C
LO to IF Feedthrough vs VCC
–20
–21
–22
–23
–24
–25
–26
–27
–28
–29
–30
SR01591
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
25°C
–28.0
–30.0
–32.0
–34.0
–36.0
–38.0
–40.0
–42.0
25°C
85°C
Figure 5.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 8
PERFORMANCE CHARACTERISTICS
–40°C
85°C
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER IN to IF (dBm)
–40°C
25°C
85°C
Mixer In to IF Feedthrough vs VCC
15.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA GAIN (dB)
–40°C
25°C
85°C
LNA Gain (Enabled) vs VCC
14.8
14.6
14.4
14.2
14.0
13.8
13.6
15.6
15.4
15.2
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER NOISE FIGURE (dB)
–40°C
25°C
Mixer Noise Figure vs VCC
11.0
10.8
10.6
10.4
10.2
10.0
9.8
9.6
9.4
9.2
9.0 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA NOISE FIGURE (dB)
25°C
85°C
LNA Noise Figure vs VCC
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
SR01592
–42.0
–43.0
–44.0
–45.0
–46.0
–47.0
–48.0
Figure 6.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 9
CH2 S11 1 U FS
32
1
4
1: 40.1 Ω
-129.6 Ω
200 MHz
2: 24.0 Ω
-62.9 Ω
400 MHz
3: 18.6 Ω
-37.4 Ω
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
SR01593
4: 14.1 Ω
10.5 pF
-16.7 Ω
900 MHz
Figure 7. Typical S11 of LNA at 3V
3
CH1 S22 1 U FS
21
4
1: 40.5 Ω
-28.2 Ω
700 MHz
2: 36.1 Ω
-12.4 Ω
800 MHz
3: 34.7 Ω
3.5 Ω
900 MHz
START 700. 000 000 MHz STOP 1 200. 000 000 MHz
SR01253
4: 34.9 Ω
3.74 Ω
661.4 pH
900 MHz
Figure 8. Typical S22 of LNA at 3V

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 10
CH1 S21 10 U FS
1: 6.7 U
142.5 °
200 MHz
2: 5.9 U
112.3 °
400 MHz
3: 5.9 U
78.1 °
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
1
3
2
4
SR01254
4: 4.5 U
21.2°
900 MHz
Figure 9. Typical S21 of LNA at 3V
CH2 S12 50 mU FS
1: 1.9 mU
83.0 °
200 MHz
2: 1.6 mU
133.5 °
400 MHz
3: 11.4 mU
141.5 °
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
3
2
4
SR01255
14: 27.9 mU
106.1°
900 MHz
Figure 10. Typical S12 of LNA at 3V