Philips SA631 User manual

SA631
1GHz low voltage LNA and mixer
Product specification
IC17 Data Handbook
1998 Jan 08
INTEGRATED CIRCUITS

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
2
1998 Jan 08 853–2045 18847
DESCRIPTION
The SA631 is a combined low-noise BiCMOS amplifier, and mixer
designed for high-performance low-power communication systems
from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise
figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at
the input. The gain is stabilized by on-chip compensation to vary
less than ±0.2dB over –40 to +85°C temperature range. The
wide-dynamic-range mixer has a 10dB noise figure and IP3 of
+3.3dBm at the input at 881MHz. The nominal current drawn from a
single 3V supply is 8.3mA. Additionally, the entire circuit can be
powered down to further reduce the supply current to less than
20µA.
FEATURES
•Low current consumption
•Outstanding gain and noise figure
•Excellent gain stability versus temperature and supply voltage
•LNA and mixer power down capability
•Designed in Philips state of the art BiCMOS QUBIC process
APPLICATIONS
•900MHz cellular and cordless front-end
•Spread spectrum receivers
•RF data links
•UHF frequency conversion
•Portable radio
PIN CONFIGURATION
1
2
3
4
5
6
7
8
9
10 11
12
13
14
20
19
18
17
16
15
GND
LNA OUT
VCC
LNA IN
GND
GND
MIXER IN
MIXER OUT
MIXER OUT
GND
GND
GND
GND
GND
GND
GND
LO OUT
PD2
PD1
GND
SR00124
Figure 1. Pin Configuration
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
20-Pin Shrink Small Outline Package (Surface-mount, SSOP) –40 to +85°CSA631DK SOT266-1
BLOCK DIAGRAM
43215
20 19 18 17 16
761098
15 14 13 12 11
LO GND GND
GND VCC
LNA
IN GND
MIXER
IN
MIXER
OUT
MIXER
OUT
PD1 PD2 GND
LNA
OUT
GND
OUT
GND
GND
LNA
GND
GND GND
SR01588
Figure 2. SA631 Block Diagram

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 3
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage1–0.3 to +6 V
VIN Voltage applied to any other pin –0.3 to (VCC + 0.3) V
PDPower dissipation, Tamb = 25°C (still air)2
20-Pin Plastic SSOP 980 mW
TJMAX Maximum operating junction temperature 150 °C
PMAX Maximum power input/output +20 dBm
TSTG Storage temperature range –65 to +150 °C
NOTES:
1. Transients exceeding 8V on VCC pin may damage product.
2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
θJA: 20-Pin SSOP = 110°C/W
3. Pins 19 and 20 are ESD sensitive (mixer outputs).
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER RATING UNITS
VCC Supply voltage 2.7 to 5.5 V
Tamb Operating ambient temperature range –40 to +85 °C
TJOperating junction temperature –40 to +105 °C
DC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25°C; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN TYP MAX
UNITS
Full power-on 8.3 mA
ICC Supply current LNA powered-down 5.2 mA
Full power-down 20 µA
VTPD logic threshold voltage 1.2 1.6 1.8 V
VIH Logic 1 level 2.0 VCC V
VIL Logic 0 level –0.3 0.8 V
IIL PD1 input current Enable = 0.4V 10 µA
IIH PD2 input current Enable = 2.4V 10 µA

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 4
AC ELECTRICAL CHARACTERISTICS
VCC = +3.0V, Tamb = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST
CONDITIONS
–3TYP +3
UNITS
Low Noise Amplifier
fRF RF input frequency range 800 1000 MHz
S21 Amplifier gain 15 dB
S21 Amplifier gain in power-down mode –28 dB
∆S21/∆TGain temperature sensitivity enabled 0.006 dB/°C
∆S21/∆fGain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz
S12 Amplifier reverse isolation @ 881 MHz –28 dB
S11 Amplifier input match With ext. impedance matching –10 dB
S22 Amplifier output match –10 dB
P-1dB Amplifier input 1dB gain compression –20 dBm
IP3 Amplifier input third order intercept –7 dBm
NF Amplifier noise figure 1.7 dB
tON Amplifier turn-on time (Enable Lo →Hi) 120 µs
tOFF Amplifier turn-off time (Enable Hi →Lo) 0.3 µs
Mixer
PGCMixer power conversion gain: RP= RL= 1.2kΩfRF = 881MHz, fLO = 964MHz,
fIF = 83MHz 9.6 dB
S11M Mixer input match Ext. impedance matching req. –10 dB
NFMMixer SSB noise figure 10 dB
P-1dB Mixer input 1dB gain compression –14.5 dBm
IP3MMixer input third order intercept 3.3 dBm
IP2INT Mixer input second order intercept 38 dBm
PRFM-IF Mixer RF feedthrough RFIN = –32dBm –45 dBm
PLO-IF LO feedthrough to IF LO = –0dBm –23 dBm
PLO-RFM LO to mixer input feedthrough –32 dBm
PLO-RF LO to LNA input feedthrough –42 dBm
Overall System
GSYS System gain LNA + Mixer 23.9 24.6 25.3 dB

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 5
Table 1. Power ON/OFF Control Logic
PD1 PD2
0 0 Full chip power-down
01 or open Mixer on, LNA power-down
1 or open 0Standby (bias on)
1 or open 1 or open Full chip power-on (default)
SR01589
+
–
20 19 18 17 16 15 14 13 12 11
1234 5678910
PD1 PD2 GND GND GND GND GND GND GND
MIXER GND GND GND GND
VCC
LOOUT
IFOUT
VCOOUT
SA631
C3
6.8pF L4
560n
C15 10nF
C14
6.8pF C13
33pF
C8
10nF 3V
C12
100pF
C1
100pF
VCC
OUT MIXER
OUT MIXER
IN LNA
IN LNA
OUT
L3
6.8nH
10nF
0.1µF
C9
C11
L6
12nH
C10
2.2pF
10pF
C16
10pF
L1
560nH
C2
Figure 3. SA631 Application Circuit

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 6
PERFORMANCE CHARACTERISTICS
85°C25°C
–15
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA 1dB (dBm)
–40°C
25°C
LNA 1dB Compression vs VCC
–16
–17
–18
–19
–20
–21
–22
–23
–24
–25
-14.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER 1dB (dBm)
-40°C
Mixer 1dB Compression vs VCC
-14.5
-15.0
-15.5
-16.0
-13.0
-13.5
-28.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA GAIN (dB)
-40°C
25°C
85°C
LNA Gain (Disabled) vs VCC
-28.5
-29.0
-29.5
-30.0
-30.5
-31.0
-27.0
-27.5
6.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER IP3 (dBm)
-40°C
25°C
85°C
Mixer IP3 vs VCC
5.0
4.0
3.0
2.0
1.0
0.0
–1.0
–2.0
-11
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA IP3 (dBm)
–40°C
25°C
LNA IP3 vs VCC
-2
-3
-4
-5
-6
-7
-8
-9
-10
0
85°C
85°C
SR01590
-12
–3.0
–4.0
Figure 4.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 7
PERFORMANCE CHARACTERISTICS
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
Icc (mA)
-40°C
25°C
85°C
ICC vs VCC and Temperature
8.2
7.8
7.4
7.0
6.6
6.2
5.8
9.8
9.4
9.0
8.6
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER GAIN (dB)
-40°C
85°C
Mixer Power Gain vs VCC
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to LNA IN (dBm)
-40°C
25°C
85°C
LO to LNA In Feedthrough vs VCC
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to MIXER IN (dBm)
-40°C
LO to Mixer In Feedthrough vs VCC
–39
–40
–41
–42
–43
–44
–45
–46
–47
–48
–49
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LO to IF (dBm)
-40°C
25°C
85°C
LO to IF Feedthrough vs VCC
–20
–21
–22
–23
–24
–25
–26
–27
–28
–29
–30
SR01591
11.0
10.5
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
25°C
–28.0
–30.0
–32.0
–34.0
–36.0
–38.0
–40.0
–42.0
25°C
85°C
Figure 5.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 8
PERFORMANCE CHARACTERISTICS
–40°C
85°C
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER IN to IF (dBm)
–40°C
25°C
85°C
Mixer In to IF Feedthrough vs VCC
15.0
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA GAIN (dB)
–40°C
25°C
85°C
LNA Gain (Enabled) vs VCC
14.8
14.6
14.4
14.2
14.0
13.8
13.6
15.6
15.4
15.2
2.5 3 3.5 4 4.5 5 5.5
VCC (V)
MIXER NOISE FIGURE (dB)
–40°C
25°C
Mixer Noise Figure vs VCC
11.0
10.8
10.6
10.4
10.2
10.0
9.8
9.6
9.4
9.2
9.0 2.5 3 3.5 4 4.5 5 5.5
VCC (V)
LNA NOISE FIGURE (dB)
25°C
85°C
LNA Noise Figure vs VCC
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
SR01592
–42.0
–43.0
–44.0
–45.0
–46.0
–47.0
–48.0
Figure 6.

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 9
CH2 S11 1 U FS
32
1
4
1: 40.1 Ω
-129.6 Ω
200 MHz
2: 24.0 Ω
-62.9 Ω
400 MHz
3: 18.6 Ω
-37.4 Ω
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
SR01593
4: 14.1 Ω
10.5 pF
-16.7 Ω
900 MHz
Figure 7. Typical S11 of LNA at 3V
3
CH1 S22 1 U FS
21
4
1: 40.5 Ω
-28.2 Ω
700 MHz
2: 36.1 Ω
-12.4 Ω
800 MHz
3: 34.7 Ω
3.5 Ω
900 MHz
START 700. 000 000 MHz STOP 1 200. 000 000 MHz
SR01253
4: 34.9 Ω
3.74 Ω
661.4 pH
900 MHz
Figure 8. Typical S22 of LNA at 3V

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 10
CH1 S21 10 U FS
1: 6.7 U
142.5 °
200 MHz
2: 5.9 U
112.3 °
400 MHz
3: 5.9 U
78.1 °
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
1
3
2
4
SR01254
4: 4.5 U
21.2°
900 MHz
Figure 9. Typical S21 of LNA at 3V
CH2 S12 50 mU FS
1: 1.9 mU
83.0 °
200 MHz
2: 1.6 mU
133.5 °
400 MHz
3: 11.4 mU
141.5 °
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
3
2
4
SR01255
14: 27.9 mU
106.1°
900 MHz
Figure 10. Typical S12 of LNA at 3V

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 11
3
CH1 S11 1 U FS
2
1
4
1: 122.8 Ω
-144.9 Ω
200 MHz
2: 58.0 Ω
-86.8 Ω
400 MHz
3: 45.9 Ω
-62.3 Ω
600 MHz
START 100. 000 000 MHz STOP 1 200. 000 000 MHz
SR01256
4: 26.6 Ω
-43.2 Ω
4.085 pF
900 MHz
Figure 11. Typical S11 of Mixer at 3V

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 12
Table 2. Typical S-Parameters of LNA at 3V
LNA
Freq (MHz) |S11|
(U) <S11 (deg) |S21|
(U) <S21 (deg) |S12|
(U) <S12 (deg) |S22|
(U) <S22
(deg)
100 0.86 –20 7.4 160 0.001 91.91 0.59 –9.62
122 0.86 –24 7.1 156 0.001 62 0.58 –11.71
144 0.85 –28 7.0 151 0.001 105.42 0.58 –13.86
166 0.83 –32 6.9 148 0.000 91.65 0.57 –15.89
188 0.82 –36 6.8 144 0.002 100.23 0.57 –17.80
210 0.81 –41 6.7 140 0.002 73.57 0.56 –20.05
232 0.80 –45 6.6 136 0.002 99.70 0.55 –22.37
254 0.79 –48 6.5 133 0.001 84.00 0.54 –24.60
276 0.78 –52 6.4 130 0.001 103.18 0.53 –26.89
298 0.76 –56 6.3 126 0.002 94.33 0.52 –28.72
320 0.75 –59 6.3 123 0.002 66.98 0.51 –30.98
342 0.73 –63 6.2 119 0.002 108.53 0.50 –32.79
364 0.71 –66 6.1 116 0.002 118.13 0.48 –34.68
386 0.70 –69 6.0 113 0.001 103.4 0.47 –36.06
408 0.69 –72 5.9 111 0.001 175.94 0.46 –36.64
430 0.68 –76 5.9 109 0.004 174.1 0.45 –37.21
452 0.69 –78 6.0 106 0.006 162.02 0.46 –38.41
474 0.68 –82 6.1 102 0.007 160.07 0.47 –41.54
496 0.67 –85 6.1 97 0.008 153.6 0.47 –45.75
518 0.66 –89 6.1 93 0.010 146.17 0.46 –50.35
540 0.65 –92 6.1 89 0.009 142.13 0.45 –54.73
562 0.63 –96 6.1 85 0.010 138.49 0.43 –59.16
584 0.62 –99 6.0 81 0.011 146.17 0.42 –63.93
606 0.62 –102 5.9 77 0.011 140.55 0.40 –68.56
628 0.61 –104 5.8 72 0.013 137.2 0.38 –73.48
650 0.61 –107 5.7 69 0.013 130.62 0.36 –78.19
672 0.60 –109 5.7 65 0.016 129.77 0.34 –83.75
694 0.60 –112 5.6 61 0.016 131.94 0.31 –89.81
716 0.59 –115 5.5 57 0.017 128.67 0.29 –96.92
738 0.59 –118 5.5 53 0.019 127.53 0.27 –104.48
760 0.59 –121 5.3 48 0.021 123.42 0.24 –112.81
782 0.59 –124 5.3 44 0.021 122.31 0.22 –122.41
804 0.59 –126 5.1 40 0.022 119.52 0.21 –132.81
826 0.59 –129 5.0 36 0.024 118.29 0.19 –145.39
848 0.59 –132 4.9 31 0.026 115.98 0.18 –159.13
870 0.59 –135 4.8 26 0.027 111.9 0.17 –175.11
892 0.59 –138 4.6 22 0.028 108.11 0.18 169.02
914 0.59 –142 4.5 18 0.028 105.92 0.19 154.96
936 0.59 –144 4.3 14 0.028 106.13 0.20 141.94
958 0.59 –148 4.2 9 0.030 99.79 0.22 130.27
980 0.59 –151 4.0 4 0.031 99.30 0.24 119.5
1002 0.59 –153 3.8 0 0.031 94.81 0.26 110.61
1024 0.59 –157 3.6 –2 0.032 90.91 0.28 102.16
1046 0.59 –160 3.5 –6 0.032 85.65 0.30 94.98
1068 0.59 –164 3.3 –10 0.033 86.10 0.33 88.45
1090 0.59 –167 3.2 –14 0.033 80.59 0.35 82.47
1112 0.59 –170 3.0 –18 0.031 79.18 0.36 77.17
1134 0.58 –172 2.8 –22 0.030 46.32 0.38 71.98
1156 0.58 –175 2.7 –25 0.031 78.57 0.39 67.45
1178 0.57 –178 2.5 –28 0.031 73.66 0.41 62.73
1200 0.57 178 2.4 –31 0.029 71.78 0.42 58.87

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 13
Table 3. Typical S-Parameters of Mixer at 3V
Mixer
Freq (MHz) |S11|
(U) <S11 (deg)
100 0.73 –11
122 0.73 –147
144 0.72 –16
166 0.72 –19
188 0.72 –21
210 0.71 –24
232 0.70 –27
254 0.70 –29
276 0.69 –32
298 0.68 –34
320 0.67 –37
342 0.66 –39
364 0.64 –42
386 0.63 –44
408 0.62 –46
430 0.61 –48
452 0.59 –50
474 0.58 –52
496 0.57 –53
518 0.56 –54
540 0.55 –56
562 0.55 –57
584 0.54 –59
606 0.54 –61
628 0.54 –62
650 0.54 –64
Mixer
Freq (MHz) |S11|
(U) <S11 (deg)
672 0.54 –65
694 0.54 –67
716 0.54 –69
738 0.54 –71
760 0.54 –73
782 0.55 –76
804 0.55 –78
826 0.55 –80
848 0.55 –82
870 0.55 –85
892 0.56 –87
914 0.55 –90
936 0.56 –93
958 0.56 –96
980 0.56 –98
1002 0.56 –101
1024 0.57 –104
1046 0.57 –106
1068 0.57 –110
1090 0.57 –112
1112 0.57 –115
1134 0.57 –118
1156 0.57 –121
1178 0.57 –124
1200 0.57 –127

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 14
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 15
NOTES

Philips Semiconductors Product specification
SA6311GHz low voltage LNA and mixer
1998 Jan 08 16
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
atanyotherconditionsabovethosegivenintheCharacteristicssectionsofthespecificationisnotimplied.Exposuretolimitingvaluesforextended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonablybe expectedto resultin personalinjury.PhilipsSemiconductors customersusing orselling theseproductsfor useinsuchapplications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges,withoutnotice,intheproducts,includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products,andmakesnorepresentations orwarranties thattheseproductsarefree frompatent, copyright,ormaskworkrightinfringement,unless
otherwise specified.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Date of release: 01-98
Document order number: 9397 750 03414
Data sheet
status
Objective
specification
Preliminary
specification
Product
specification
Product
status
Development
Qualification
Production
Definition [1]
This data sheet contains the design target or goal specifications for product development.
Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors reserves the right to make chages at any time without notice in order to
improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make
changes at any time without notice in order to improve design and supply the best possible product.
Data sheet status
[1] Please consult the most recently issued datasheet before initiating or completing a design.

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细选、量身订做各种高科技电子元器件,并解决各种技术问题。
微波光电部专业代理经销高频、微波、光纤、光电元器件、组件、部件、模块、整机;电
磁兼容元器件、材料、设备;微波 CAD、EDA 软件、开发测试仿真工具;微波、光纤仪器仪表。
欢迎国外高科技微波、光纤厂商将优秀产品介绍到中国、共同开拓市场。长期大量现货专业批发
高频、微波、卫星、光纤、电视、CATV 器件: 晶振、VCO、连接器、PIN 开关、变容二极管、开
关二极管、低噪晶体管、功率电阻及电容、放大器、功率管、MMIC、混频器、耦合器、功分器、
振荡器、合成器、衰减器、滤波器、隔离器、环行器、移相器、调制解调器;光电子元器件和组
件:红外发射管、红外接收管、光电开关、光敏管、发光二极管和发光二极管组件、半导体激光
二极管和激光器组件、光电探测器和光接收组件、光发射接收模块、光纤激光器和光放大器、光
调制器、光开关、DWDM 用光发射和接收器件、用户接入系统光光收发器件与模块、光纤连接器、
光纤跳线/尾纤、光衰减器、光纤适 配器、光隔离器、光耦合器、光环行器、光复用器/转换器;
无线收发芯片和模组、蓝牙芯片和模组。
更多产品请看本公司产品专用销售网站:
商斯达中国传感器科技信息网:http://www.sensor-ic.com/
商斯达工控安防网:http://www.pc-ps.net/
商斯达电子元器件网:http://www.sunstare.com/
商斯达微波光电产品网:HTTP://www.rfoe.net/
商斯达消费电子产品网://www.icasic.com/
商斯达实业科技产品网://www.sunstars.cn/ 微波元器件销售热线:
地址:深圳市福田区福华路福庆街鸿图大厦 1602 室
电话:0755-82884100 83397033 83396822 83398585
传真:0755-83376182 (0)13823648918 MSN: SUNS888[email protected]m
邮编:518033 E-mail:szss2[email protected] QQ: 195847376
深圳赛格展销部:深圳华强北路赛格电子市场 2583 号 电话:0755-83665529 25059422
技术支持: 0755-83394033 13501568376
欢迎索取免费详细资料、设计指南和光盘 ;产品凡多,未能尽录,欢迎来电查询。
北京分公司:北京海淀区知春路 132 号中发电子大厦 3097 号
TEL:010-81159046 82615020 13501189838 FAX:010-62543996
上海分公司:上海市北京东路 668 号上海賽格电子市场 D125 号
TEL:021-28311762 56703037 13701955389 FAX:021-56703037
西安分公司:西安高新开发区 20 所(中国电子科技集团导航技术研究所)
西安劳动南路 88 号电子商城二楼 D23 号
TEL:029-81022619 13072977981 FAX:029-88789382

SUNSTAR 商斯达实业集团是集研发、生产、工程、销售、代理经销 、技术咨询、信息服务等为
一体的高科技企业,是专业高科技电子产品生产厂家,是具有 10 多年历史的专业电子元器件供
应商,是中国最早和最大的仓储式连锁规模经营大型综合电子零部件代理分销商之一,是一家专
业代理和分銷世界各大品牌 IC 芯片和電子元器件的连锁经营綜合性国际公司,专业经营进口、
国产名厂名牌电子元件,型号、种类齐全。在香港、北京、深圳、上海、西安、成都等全国主要
电子市场设有直属分公司和产品展示展销窗口门市部专卖店及代理分销商,已在全国范围内建成
强大统一的供货和代理分销网络。 我们专业代理经销、开发生产电子元器件、集成电路、传感
器、微波光电元器件、工控机/DOC/DOM 电子盘、专用电路、单片机开发、MCU/DSP/ARM/FPGA 软
件硬件、二极管、三极管、模块等,是您可靠的一站式现货配套供应商、方案提供商、部件功能
模块开发配套商。商斯达实业公司拥有庞大的资料库,有数位毕业于著名高校——有中国电子工
业摇篮之称的西安电子科技大学(西军电)并长期从事国防尖端科技研究的高级工程师为您精挑
细选、量身订做各种高科技电子元器件,并解决各种技术问题。
微波光电部专业代理经销高频、微波、光纤、光电元器件、组件、部件、模块、整机;电
磁兼容元器件、材料、设备;微波 CAD、EDA 软件、开发测试仿真工具;微波、光纤仪器仪表。
欢迎国外高科技微波、光纤厂商将优秀产品介绍到中国、共同开拓市场。长期大量现货专业批发
高频、微波、卫星、光纤、电视、CATV 器件: 晶振、VCO、连接器、PIN 开关、变容二极管、开
关二极管、低噪晶体管、功率电阻及电容、放大器、功率管、MMIC、混频器、耦合器、功分器、
振荡器、合成器、衰减器、滤波器、隔离器、环行器、移相器、调制解调器;光电子元器件和组
件:红外发射管、红外接收管、光电开关、光敏管、发光二极管和发光二极管组件、半导体激光
二极管和激光器组件、光电探测器和光接收组件、光发射接收模块、光纤激光器和光放大器、光
调制器、光开关、DWDM 用光发射和接收器件、用户接入系统光光收发器件与模块、光纤连接器、
光纤跳线/尾纤、光衰减器、光纤适 配器、光隔离器、光耦合器、光环行器、光复用器/转换器;
无线收发芯片和模组、蓝牙芯片和模组。
更多产品请看本公司产品专用销售网站:
商斯达中国传感器科技信息网:http://www.sensor-ic.com/
商斯达工控安防网:http://www.pc-ps.net/
商斯达电子元器件网:http://www.sunstare.com/
商斯达微波光电产品网:HTTP://www.rfoe.net/
商斯达消费电子产品网://www.icasic.com/
商斯达实业科技产品网://www.sunstars.cn/ 微波元器件销售热线:
地址:深圳市福田区福华路福庆街鸿图大厦 1602 室
电话:0755-82884100 83397033 83396822 83398585
传真:0755-83376182 (0)13823648918 MSN: SUNS888[email protected]m
邮编:518033 E-mail:szss2[email protected] QQ: 195847376
深圳赛格展销部:深圳华强北路赛格电子市场 2583 号 电话:0755-83665529 25059422
技术支持: 0755-83394033 13501568376
欢迎索取免费详细资料、设计指南和光盘 ;产品凡多,未能尽录,欢迎来电查询。
北京分公司:北京海淀区知春路 132 号中发电子大厦 3097 号
TEL:010-81159046 82615020 13501189838 FAX:010-62543996
上海分公司:上海市北京东路 668 号上海賽格电子市场 D125 号
TEL:021-28311762 56703037 13701955389 FAX:021-56703037
西安分公司:西安高新开发区 20 所(中国电子科技集团导航技术研究所)
西安劳动南路 88 号电子商城二楼 D23 号
TEL:029-81022619 13072977981 FAX:029-88789382
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