Texas Instruments bq78350-R1 User manual

1
SLUUBM6–March 2018
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
bq78350-R1 TRM Addendum for the bq78350-R2 Device
Preface
SLUUBM6–March 2018
bq78350-R1 TRM Addendum for the bq78350-R2 Device
This document is an addendum to the bq78350-R1 Technical Reference Manual (TRM, SLUUBD3) and
discusses modifications relating to the bq78350-R2 device. Items not discussed in this addendum have
not changed.
Notational Conventions
Information Type Formatting Convention Example
Commands Italics with parentheses and no breaking spaces RemainingCapacity() command
Data Flash (DF) Italics,bold, and breaking spaces Design Capacity data
Register bits and flags Brackets and italics [TDA] bit
Data flash bits Brackets, italics, and bold [LED1] bit
Modes and states ALL CAPITALS UNSEALED mode
Related Documentation from Texas Instruments
The following is related documentation:
1. bq78350-R1 Technical Reference Manual (SLUUBD3)
2. bq78350-R1 CEDV Li-Ion Gas Gauge and Battery Management Controller Companion to the bq769x0
Battery Monitoring AFE Data Sheet (SLUSCD0)
3. bq78350 Data Memory Programming for Mass Production Application Report (SLUA742)
Trademarks
All trademarks are the property of their respective owners.
Glossary
TI Glossary —This glossary lists and explains terms, acronyms, and definitions.

2SLUUBM6–March 2018
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
Overview
TRM Addendum
SLUUBM6–March 2018
Overview
Contents
1 General Description ......................................................................................................... 2
2 Production Plans............................................................................................................. 2
3 Added Features.............................................................................................................. 2
4 Changed and Removed Features ....................................................................................... 12
1 General Description
The bq78350-R2 device is a modified version of the catalog bq78350-R1 device, which modifies selected
functionality as well as adding new features. This document details the changes regarding the bq78350-
R2 device with respect to the bq78350-R1 device.
2 Production Plans
To use the bq78350-R2 device, customers must order the catalog bq78350-R1 device from TI.com, and
program the device with the TI-provided bq78350-R2 firmware. Thus, the package and pinout will remain
the same as the bq78350-R1 device, with the exception of some modified functionality associated with the
GPIO_B pin.
3 Added Features
3.1 PRE-DISCHARGE Mode
The bq78350-R2 device includes new functionality to provide pre-discharge control functionality on the
GPIO_B pin (pin 28) for use with a high-side PFET. This pin functions as an open-drain output pin, which
is expected to drive the gate of an NFET with source at ground. When the NFET is turned on, it will pull
down the PFET gate and enable pre-discharge. When the NFET is turned off, the PFET gate will be pulled
up and turn off the PFET, disabling pre-discharge.

RPREDSG
RPULLUP 2
DSGCHG
VCC
PACK+
CELL+
bq76200
bq78350
RPULLUP1
GPIO_B
RDIVIDE
www.ti.com Added Features
3
SLUUBM6–March 2018
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
Overview
Figure 1. PRE-DISCHARGE
If the DSG FET is off and the bq78350-R2 device receives a request to turn it on, and if the bq78350 does
not detect a charging current above a level of Charge Current Threshold, the bq78350-R2 device will
first enter a pre-discharge phase for a length of time given by Pre-Discharge:[FET ON Time]. After this
time expires, the bq78350-R2 device will disable the pre-discharge phase and turn on the DSG FET.
If the DSG FET is off and the bq78350-R2 device receives a request to turn it on, and if the bq78350-R2
device detects a charging current above a level of Charge Current Threshold, the bq78350-R2 device
will immediately turn on the DSG FET and not first implement a pre-discharge phase.
While the bq78350-R2 device is in the pre-discharge phase, if any fault or issue occurs that would
normally cause the DSG FET to be disabled (such as ACSD, AOLD, OTD, UTD), then the bq78350-R2
device will immediately disable the pre-discharge phase but keep the DSG FET off until all such faults are
cleared.
3.1.1 Flash Changes for PRE-DISCHARGE Mode
Data flash bits to enable/disable the pre-discharge functionality and control the polarity of the signaling
used on GPIO_B are included in the FET Options register.
Class Subclass Name Format Size in
Bytes Min Max Default Unit
Settings Configuration FET Options Hex 2 0x0000 0xFFFF 0x0021 —
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
High byte RSVD RSVD RSVD RSVD PDSG_POL PDSG_EN KEY_POL PCHG_POL
Low Byte RSVD SLEEPCHG CHGFET CHGIN CHGSU OTFET KEY_EN PCHG_EN
RSVD (Bits 7–4): Reserved
PDSG_POL: Configures the bq78350-R2 device GPIO_B pin output polarity when used for PRE-
DISCHARGE mode. If PDSG_EN = 0, then this bit has no influence.
0 = The bq78350-R2 device configures the GPIO_B as active low (default).
1 = The bq78350-R2 device configures the GPIO_B as active high, requiring an external pull up.

Added Features www.ti.com
4SLUUBM6–March 2018
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
Overview
PDSG_EN: This bit enables the bq78350-R2 device to use the GPIO_B pin during PRE-DISCHARGE
mode. 0 = The bq78350-R2 device does not use GPIO_B for PRE-DISCHARGE mode (default)
1 = The bq78350-R2 device controls GPIO_B under normal charge control algorithm.
KEY_POL: This bit configures the KEYIN input detection polarity.
0 = KEYIN detection is active low (default).
1 = KEYIN detection is active high.
PCHG_POL: Configures the bq78350-R2 device PRECHG pin output polarity. If PCHG_EN = 0, then
this bit has no influence.
0 = The bq78350-R2 device configures the PRECHG as active low (default).
1 = The bq78350-R2 device configures the PRECHG as active high, requiring an external pull
up.
SLEEPCHG: CHG FET is enabled during SLEEP.
0 = CHG FET is off during SLEEP (default).
1 = CHG FET remains on during SLEEP.
CHGFET: FET action on valid charge termination
0 = FET active
1 = Charging and precharging disabled, FET off (default)
CHGIN: FET action in CHARGE INHIBIT mode
0 = FET active (default)
1 = Charging and precharging disabled, FETs off
CHGSU: FET action in CHARGE SUSPEND mode
0 = FET active (default)
1 = Charging and precharging disabled, FETs off
OTFET: FET action in OVERTEMPERATURE mode
0 = No FET action for overtemperature condition (default)
1 = CHG and DSG FETs will be turned off for overtemperature conditions.
KEY_EN: Enables the bq78350-R2 device to use the KEYIN pin function.
0 = The bq78350-R2 device never uses KEYIN (default).
1 = The bq78350-R2 device KEYIN is used to control the DSG FET.
PCHG_EN: This bit enables the bq78350-R2 device to use the PRECHG pin during PRECHARGE
mode. 0 = The bq78350-R2 device never uses PRECHG.
1 = The bq78350-R2 device controls PRECHG under normal charge control algorithm (default).
The Pre-Discharge:[FET ON Time] setting is included in the following data flash:
Class Subclass Name Type Min Max Default Unit
Power Pre-Discharge FET ON Time U2 0 65535 10 s
3.1.2 Command Changes for PRE-DISCHARGE Mode
3.1.2.1 ManufacturerAccess() 0x0057 ManufacturingStatus
This command returns the ManufacturingStatus() flags on ManufacturerBlockAccess() or
ManufacturerData(). A new [PDSG_TEST] bit was added here for the bq78350-R2 device.

www.ti.com Added Features
5
SLUUBM6–March 2018
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
Overview
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
High byte CAL_EN LT_TEST CB_TEST AFE_DD
_TEST RSVD RSVD LED_EN SAFE_EN
Low Byte BBR_EN PF_EN LF_EN FET_EN PDSG
_TEST DSG_TEST CHG_TEST PCHG _TEST
PDSG_TEST: Pre-Discharge FET Test
0 = Disabled
1 = Pre-discharge FET test activated

Added Features www.ti.com
6SLUUBM6–March 2018
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
Overview
3.1.2.2 ManufacturerAccess() 0x001A PRE-DSG FET
This command turns on/off the pre-discharge FET drive function (which uses GPIO_B) to ease testing
during manufacturing. When 0x001A is written to ManufacturerAccess() when
ManufacturingStatus()[FET_EN,PDSG_TEST] = 0, 0, then GPIO_B turns the pre-discharge function ON
and ManufacturingStatus()[PDSG_TEST] is set to 1. If 0x001A is written to ManufacturerAccess() once
again, then GPIO_B turns the pre-discharge function OFF and ManufacturingStatus()[PDSG_TEST] is
cleared to 0.
NOTE: The GPIO mode should not be used on GPIO_B while the PRE-DISCHARGE mode is used.
3.2 JEITA Charge Control
The existing bq78350-R1 device does not include JEITA charge control. This functionality is added in the
bq78350-R2 device.
NOTE: Some existing data flash addresses were modified from bq78350-R1 device to
accommodate the extra address space required for this feature.
The class name is changed from Charge Algorithm to Advanced Charge Algorithm.
3.2.1 Temperature Ranges
Temperature Ranges ≥values are changed from:
•Charge Inhibit/Suspend Low Temp
•Precharge Temp
•Charge Inhibit High Temp
•Charge Suspend High Temp
To:
•T1 Temp
•T2 Temp
•T5 Temp
•T6 Temp
•T3 Temp
•T4 Temp
See further details on these changes below:
3.2.1.1 T1 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T1 Temp I1 –128 127 0 °C
Description: T1 low temperature range lower limit
3.2.1.2 T2 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T2 Temp I1 –128 127 12 °C
Description: T2 low temperature range to standard temperature range

www.ti.com Added Features
7
SLUUBM6–March 2018
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
Overview
3.2.1.3 T5 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T5 Temp I1 –128 127 20 °C
Description: T5 recommended temperature range lower limit
3.2.1.4 T6 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T6 Temp I1 –128 127 25 °C
Description: T6 recommended temperature range upper limit
3.2.1.5 T3 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T3 Temp I1 –128 127 30 °C
Description: T3 standard temperature range to high temperature range
3.2.1.6 T4 Temp
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges T4 Temp I1 –128 127 55 °C
Description: T4 high temperature range upper limit
3.2.1.7 Hysteresis
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Temperature Ranges Hysteresis Temp I1 –128 127 1 °C
Description: Temperature Hysteresis, applied when temperature is decreasing.
3.2.2 Fast Charging
Fast Charging →Voltage and Current is replaced with:
• Low Temp Charging →Voltage
• Low Temp Charging →Current Low
• Low Temp Charging →Current Med
• Low Temp Charging →Current High
• Standard Temp Charging →Voltage
• Standard Temp Charging →Current Low
• Standard Temp Charging →Current Med
• Standard Temp Charging →Current High
• High Temp Charging →Voltage

Added Features www.ti.com
8SLUUBM6–March 2018
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
Overview
• High Temp Charging →Current Low
• High Temp Charging →Current Med
• High Temp Charging →Current High
• Rec Temp Charging →Voltage
• Rec Temp Charging →Current Low
• Rec Temp Charging →Current Med
• Rec Temp Charging →Current High
See further description on these changes below:
3.2.3 Low Temp Charging
3.2.3.1 Voltage
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Low Temp Charging Voltage I2 0 32767 4000 mV
Description: Low temperature range ChargingVoltage().
3.2.3.2 Current Low
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Low Temp Charging Current Low I2 0 32767 132 mA
Description: Low temperature range low voltage range ChargingCurrent()
3.2.3.3 Current Med
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Low Temp Charging Current Med I2 0 32767 352 mA
Description: Low temperature range medium voltage range ChargingCurrent()
3.2.3.4 Current High
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Low Temp Charging Current High I2 0 32767 264 mA
Description: Low temperature range high voltage range ChargingCurrent()

www.ti.com Added Features
9
SLUUBM6–March 2018
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
Overview
3.2.4 Standard Temp Charging
3.2.4.1 Voltage
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Standard Temp Charging Voltage I2 0 32767 4200 mV
Description: Standard temperature range ChargingVoltage()
3.2.4.2 Current Low
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Standard Temp Charging Current Low I2 0 32767 1980 mA
Description: Standard temperature range low voltage range ChargingCurrent()
3.2.4.3 Current Med
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Standard Temp Charging Current Med I2 0 32767 4004 mA
Description: Standard temperature range medium voltage range ChargingCurrent()
3.2.4.4 Current High
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Standard Temp Charging Current High I2 0 32767 2992 mA
Description: Standard temperature range high voltage range ChargingCurrent()
3.2.5 High Temp Charging
3.2.5.1 Voltage
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms High Temp Charging Voltage I2 0 32767 4000 mV
Description: High temperature range ChargingVoltage()
3.2.5.2 Current Low
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms High Temp Charging Current Low I2 0 32767 1012 mA
Description: High temperature range low voltage range ChargingCurrent()

Added Features www.ti.com
10 SLUUBM6–March 2018
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
Overview
3.2.5.3 Current Med
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms High Temp Charging Current Med I2 0 32767 1980 mA
Description: High temperature range medium voltage range ChargingCurrent()
3.2.5.4 Current High
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms High Temp Charging Current High I2 0 32767 1496 mA
Description: High temperature range high voltage range ChargingCurrent()
3.2.6 Recommended Temp Charging
3.2.6.1 Voltage
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Rec Temp Charging Voltage I2 0 32767 4100 mV
Description: Recommended temperature range ChargingVoltage()
3.2.6.2 Current Low
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Rec Temp Charging Current Low I2 0 32767 2508 mA
Description: Recommended temperature range low voltage range ChargingCurrent()
3.2.6.3 Current Med
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Rec Temp Charging Current Med I2 0 32767 4488 mA
Description: Recommended temperature range medium voltage range ChargingCurrent()
3.2.6.4 Current High
Class Subclass Name Type Min Max Default Unit
Advanced Charging
Algorithms Rec Temp Charging Current High I2 0 32767 3520 mA
Description: Recommended temperature range high voltage range ChargingCurrent()
3.2.7 Pre-Charging
Pre-Charging →Current is retained, while Start Voltage and Recovery Voltage are removed.