Texas Instruments TPS25990 User manual

User's Guide
TPS25990 Evaluation Module for eFuse
ABSTRACT
This user’s guide describes the evaluation module (EVM) for the TPS25990 eFuse. The TPS25990 device
is a 2.9-V to 16-V and 50-A stackable eFuse with a PMBus® interface for accurate digital telemetry, control,
configuration, and debugging. This device provides an accurate and fast load current monitor output, which
helps in Intel PSYS™ and PROCHOT™ implementations. This eFuse supports parallel connection with multiple
TPS25985 eFuses for higher current designs by actively synchronizing the device states and sharing the loads
during start-up and steady-state.
The TPS25990 eFuse has an integrated FET with ultra-low ON resistance of 0.8-mΩ, adjustable and robust
overcurrent and short-circuits protections, fast overvoltage protection (fixed 16.7-V threshold in hardware
and adjustable through PMBus), adjustable output slew rate control for inrush current protection, and
overtemperature protection to verify FET safe operating area (SOA). The TPS25990 eFuse also has an
adjustable overcurrent transient blanking timer to support load transients, adjustable undervoltage protection,
integrated FET health monitoring, and reporting, analog die temperature monitor output, dedicated fault and
power good indication pins, and uncommitted general purpose fast comparator.
Caution
Caution Hot Surface.
Contact may cause burns.
Do not touch !
Table of Contents
1 Introduction.............................................................................................................................................................................4
1.1 EVM Features.................................................................................................................................................................... 4
1.2 EVM Applications............................................................................................................................................................... 5
2 Description.............................................................................................................................................................................. 5
3 Schematic................................................................................................................................................................................6
4 General Configurations..........................................................................................................................................................8
4.1 Physical Access................................................................................................................................................................. 8
4.2 Test Equipment and Setup............................................................................................................................................... 10
5 Test Setup and Procedures..................................................................................................................................................12
5.1 Hot Plug........................................................................................................................................................................... 13
5.2 Start-up with Enable.........................................................................................................................................................14
5.3 Current Limit Based Start-up Behavior............................................................................................................................ 15
5.4 Power Up into Short......................................................................................................................................................... 16
5.5 Overvoltage Lockout........................................................................................................................................................ 17
5.6 Transient Overload Performance..................................................................................................................................... 17
5.7 Overcurrent Event............................................................................................................................................................ 19
5.8 Provision to Apply Load Transient and Overcurrent Event Using an Onboard Switching Circuit.....................................20
5.9 Output Hot Short.............................................................................................................................................................. 21
5.10 Quick Output Discharge (QOD)..................................................................................................................................... 22
5.11 Thermal Performance of TPS25990EVM.......................................................................................................................23
6 Using the TPS25990EVM-GUI.............................................................................................................................................. 24
6.1 Access the TPS25990EVM-GUI...................................................................................................................................... 24
6.2 Introduction to the TPS25990EVM-GUI........................................................................................................................... 24
6.3 Establishing Communication Between the EVM and GUI................................................................................................25
6.4 Quick Info......................................................................................................................................................................... 26
6.5 Configuration....................................................................................................................................................................27
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6.6 Telemetry..........................................................................................................................................................................30
6.7 Blackbox...........................................................................................................................................................................36
6.8 Register Map Page.......................................................................................................................................................... 38
7 EVAL Board Assembly Drawings and Layout Guidelines................................................................................................ 39
7.1 PCB Drawings..................................................................................................................................................................39
8 Bill Of Materials (BOM).........................................................................................................................................................42
9 Revision History................................................................................................................................................................... 50
List of Figures
Figure 3-1. TPS25990EVM eFuse Evaluation Board Schematic................................................................................................ 6
Figure 5-1. TPS25990EVM Setup with Test Equipment............................................................................................................ 12
Figure 5-2. Hot Plug Profile with TPS25990 eFuse and TPS25985 eFuse in Parallel (VIN Stepped Up from 0 V to 12 V,
COUT = 15.47 mF, CDVDT = 33 nF, RILIM(TPS25990) = 523 Ω, RILIM(TPS25985) = 402 Ω, VIREF = 1 V, and RLOAD = 0.4 Ω)............... 13
Figure 5-3. Start-up Profile with ENABLE (VIN = 12 V, EN Stepped Up from 0 V to 3 V, COUT = 18.47 mF, RLOAD = 1.2 Ω,
RILIM(TPS25990) = 523 Ω, RILIM(TPS25985) = 402 Ω, VIREF = 1 V, and CDVDT = 33 nF).....................................................................14
Figure 5-4. Start-up Profile with ENABLE: Current Sharing between TPS25990 and TPS25985 eFuses (VIN = 12 V, EN
Stepped Up from 0 V to 3 V, COUT = 15.47 mF, RLOAD = 0.4 Ω, RILIM(TPS25990) = 523 Ω, RILIM(TPS25985) = 402 Ω, VIREF = 1
V, and CDVDT = 33 nF)............................................................................................................................................................14
Figure 5-5. Start-up with Current Limit Response in TPS25990EVM (VIN = 12 V, EN Stepped Up from 0 V to 3 V,
RILIM(TPS25990) = 665 Ω, RLIMI(TPS25985) = 499 Ω, VIREF = 1 V, COUT = 18.47 mF, RLOAD = 0.45 Ω, and CDVDT = 33 nF)........15
Figure 5-6. Power Up into Output Short Response in TPS25990EVM (VIN = 12 V, EN Stepped Up from 0 V to 3 V,
RILIM(TPS25990) = 665 Ω, RILIM(TPS25985) = 499 Ω, VIREF = 1 V, and OUT Shorted to PGND).................................................. 16
Figure 5-7. Power Up into Output Short Response in TPS25990EVM: Current Sharing between TPS25990 and
TPS25985 eFuses (VIN = 12 V, EN Stepped Up from 0 V to 3 V, RILIM(TPS25990) = 665 Ω, RLIMI(TPS25985) = 499 Ω, VIREF
= 1 V, and OUT Shorted to PGND)........................................................................................................................................ 16
Figure 5-8. Overvoltage Lockout Response of TPS25990 eFuse (VIN Ramped Up from 12 V to 18 V, COUT = 470 μF,
and RLOAD = 1.2 Ω)................................................................................................................................................................ 17
Figure 5-9. Transient Overload Performance in TPS25990EVM (VIN = 12 V, tITIMER = 20 ms, COUT = 470 μF, RIMON =
1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT Ramped from 85 A to 140 A then 85 A within 15 ms)..........................................................18
Figure 5-10. Transient Overload Performance in TPS25990EVM: Current Sharing between TPS25990 and TPS25985
eFuses (VIN = 12 V, tITIMER = 20 ms, COUT = 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT Ramped from 85 A to
140 A then 85 A within 15 ms)............................................................................................................................................... 18
Figure 5-11. Overcurrent Performance in TPS25990EVM (VIN = 12 V, tITIMER = 20 ms, COUT = 470 μF, RIMON = 1.47 ∥
1.1 kΩ, VIREF = 1 V, IOUT Ramped from 85 A to 140 A then 85 A within 30 ms).................................................................... 19
Figure 5-12. Overcurrent Performance in TPS25990EVM: Current Sharing between TPS25990 and TPS25985 eFuses
(VIN = 12 V, tITIMER = 10 ms, COUT = 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT Ramped from 85 A to 140 A
then 85 A within 15 ms)..........................................................................................................................................................19
Figure 5-13. Transient Overload Performance in TPS25990EVM Using the Onboard Switching Circuit (VIN = 12 V,
tITIMER = 14 ms, COUT = 1470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT(Steady-State) = 85 A, and IOUT(Transient) = 65 A
for 9 ms)................................................................................................................................................................................. 20
Figure 5-14. Persistent Overload Performance in TPS25990EVM Using the Onboard Switching Circuit (VIN = 12 V,
tITIMER = 14 ms, COUT = 1470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT(Steady-State) = 85 A, and IOUT(Transient) = 65 A
for 18 ms)............................................................................................................................................................................... 20
Figure 5-15. Output Hot Short Response in TPS25990EVM (VIN = 12 V, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, and COUT =
10 µF).....................................................................................................................................................................................21
Figure 5-16. QOD Enabled on TPS25990 eFuse (VIN = 12 V, COUT = 470 µF, and EN Pulled Low to 0.8 V)........................... 22
Figure 5-17. QOD Disabled on TPS25990 eFuse (VIN = 12 V, COUT = 470 µF, and EN Pulled Low to 0 V)............................. 22
Figure 5-18. Thermal Performance in TPS25990EVM (VIN = 12 V, RIMON = 0.91 ∥ 1.1 kΩ, VIREF = 1.13 V, and IOUT = 110
A)............................................................................................................................................................................................23
Figure 6-1. Prerequisite to Establish Communication Between the EVM and GUI................................................................... 24
Figure 6-2. TPS25990EVM-GUI: Introduction........................................................................................................................... 24
Figure 6-3. Hardware Setup: Establishing the Communication Between the EVM and GUI.....................................................25
Figure 6-4. TPS25990EVM-GUI: Verify Device Connectivity.................................................................................................... 25
Figure 6-5. TPS25990EVM-GUI: Quick Info..............................................................................................................................26
Figure 6-6. TPS25990EVM-GUI: Device Configuration.............................................................................................................27
Figure 6-7. TPS25990EVM-GUI: Device Configuration: Device Configuration and Setup........................................................28
Figure 6-8. TPS25990EVM-GUI: Device Configuration: Warning & Fault Thresholds Configuration........................................29
Figure 6-9. TPS25990EVM-GUI: Device Configuration: Additional Configuration.................................................................... 29
Figure 6-10. TPS25990EVM-GUI: Device Telemetry................................................................................................................ 30
Figure 6-11. TPS25990EVM-GUI: Device Telemetry: Telemetry Configuration.........................................................................30
Figure 6-12. TPS25990EVM-GUI: Device Telemetry: Device Parametric Information: General Parameters............................31
Figure 6-13. TPS25990EVM-GUI: Device Telemetry: Device Parametric Information: Energy Parameters............................. 32
Figure 6-14. TPS25990EVM-GUI: Device Telemetry: Device Status Information..................................................................... 32
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Figure 6-15. TPS25990EVM-GUI: Device Telemetry Update....................................................................................................33
Figure 6-16. TPS25990EVM-GUI: Device Telemetry: Read High Speed Sample Buffer: Input Current................................... 33
Figure 6-17. TPS25990EVM-GUI: Device Telemetry: Read High Speed Sample Buffer: Input and Output Voltages...............34
Figure 6-18. TPS25990EVM-GUI: Device Telemetry: Parametric Plot......................................................................................35
Figure 6-19. TPS25990EVM-GUI: Device Telemetry: Parametric Plot: Input Power and Energy Accumulation.......................35
Figure 6-20. TPS25990EVM-GUI: Blackbox............................................................................................................................. 36
Figure 6-21. TPS25990EVM-GUI: Blackbox: Blackbox Configuration...................................................................................... 36
Figure 6-22. TPS25990EVM-GUI: Device Configuration: External EEPROM Connection........................................................37
Figure 6-23. TPS25990EVM-GUI: GPIO Configuration: External EEPROM Connection..........................................................37
Figure 6-24. TPS25990EVM-GUI: Blackbox: READ BB EEPROM........................................................................................... 38
Figure 6-25. TPS25990EVM-GUI: Register Map.......................................................................................................................38
Figure 7-1. TPS25990EVM Board: Top Assembly.....................................................................................................................39
Figure 7-2. TPS25990EVM Board: Bottom Assembly............................................................................................................... 39
Figure 7-3. TPS25990EVM Board: Top Layer........................................................................................................................... 39
Figure 7-4. TPS25990EVM Board: Bottom Layer......................................................................................................................39
Figure 7-5. TPS25990EVM Board: Layer 2 (Power)................................................................................................................. 40
Figure 7-6. TPS25990EVM Board: Layer 3 (Power)................................................................................................................. 40
Figure 7-7. TPS25990EVM Board: Layer 4 (Signal)..................................................................................................................40
Figure 7-8. TPS25990EVM Board: Layer 5 (Signal)..................................................................................................................40
Figure 7-9. TPS25990EVM Board: Layer 6 (Power)................................................................................................................. 41
Figure 7-10. TPS25990EVM Board: Layer 7 (Power)............................................................................................................... 41
List of Tables
Table 2-1. TPS25990EVM eFuse Evaluation Board Options and Settings................................................................................. 5
Table 4-1. Input and Output Connector Functionality.................................................................................................................. 8
Table 4-2. Test Points Description............................................................................................................................................... 8
Table 4-3. Jumper Descriptions and Default Positions................................................................................................................ 9
Table 4-4. Configuring Device Address..................................................................................................................................... 10
Table 4-5. LED Descriptions...................................................................................................................................................... 10
Table 5-1. Default Jumper Setting for TPS25990EVM eFuse Evaluation Board....................................................................... 12
Table 8-1. TPS25990EVM Bill of Materials................................................................................................................................42
Trademarks
PSYS™, PROCHOT™, and SMBus™ are trademarks of Intel.
Google Chrome™ is a trademark of Google Inc.
E2E™ is a trademark of Texas Instruments.
PMBus® is a registered trademark of SMIF, Inc.
All trademarks are the property of their respective owners.
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1 Introduction
The TPS25990EVM eFuse evaluation board allows reference circuit evaluation of Texas Instruments (TI)
TPS25990 eFuse. The TPS25990 device is a 2.9-V to 16-V, 50-A stackable eFuse with a PMBus interface for
accurate digital telemetry, control, configuration, and debugging. This device provides an accurate and fast load
current monitor output, which helps in Intel PSYS and PROCHOT implementations. This eFuse supports parallel
connection with multiple TPS25985 eFuses for higher current designs by actively synchronizing the device
states and sharing the loads during start-up and steady-state. The TPS25990 eFuse has an integrated FET
with ultra-low ON resistance of 0.8-mΩ, adjustable and robust overcurrent and short-circuits protections, fast
overvoltage protection (fixed 16.7-V threshold in hardware and adjustable through PMBus), adjustable output
slew rate control for inrush current protection, and overtemperature protection to verify FET safe operating
area (SOA). The TPS25990 eFuse also has an adjustable overcurrent transient blanking timer to support
load transients, adjustable undervoltage protection, integrated FET health monitoring, and reporting, analog die
temperature monitor output, dedicated fault and power good indication pins, and uncommitted general purpose
fast comparator.
Note
TPS25990EVM-GUI provides access to the TPS25990 evaluation module GUI.
1.1 EVM Features
TPS25990EVM comes with one TPS25990 eFuse and one TPS25985 eFuse connected in parallel to evaluate
a 12-V (typical) and 110-A (steady-state) design. General TPS25990EVM eFuse evaluation board features
include:
• 5-V to 16-V (typical) operation
• 9-A to 130-A programmable circuit breaker threshold using on-board jumpers
• Adjustable reference voltage (VIREF) for overcurrent, short-circuit protection, and active current sharing blocks
through VIREF (E0h) register
• Adjustable output voltage slew rate control both in hardware and firmware
• Adjustable transient current blanking timer in firmware through OC_TIMER (E6h) register
• Adjustable current limit during start-up and active current sharing threshold using on-board jumpers
• TVS diode for input and Schottky diode for output transient protections
• LED status for power good and fault indications
• On-board test points to use the general purpose comparator in implementing the PROCHOT functionality
• Options to engage the power cycle and the quick output discharge (QOD) using EN/UVLO pin
• Option to apply custom load transients using on-board MOSFETs, gate drive circuit, and load resistors
• PMBus interface with the TPS25990EVM-GUI using the USB-TO-GPIO2 USB interface adapter evaluation
module
• Option to interface an external EEPROM with TPS25990 for indefinite configuration of the eFuse and
Blackbox fault recording
CAUTION
Do not leave the EVM powered when unattended
WARNING
Signal traces, components, and component leads are located on the bottom of the circuit module.
There can be exposed voltages, hot surfaces, or sharp edges as a result. When operating the board,
do not reach under.
CAUTION
The communication interface is not isolated on the EVM. Make sure there is no ground potential
between the computer and the EVM. Note that the computer is referenced to the ground potential of
the EVM.
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1.2 EVM Applications
This EVM can be used on the following applications:
• Input hot-swap and hot-plug
• Server motherboard and add-on cards
• Graphics and accelerator cards
• Switches and routers
• Fan trays
2 Description
The TPS25990EVM enables the evaluation of TPS25990 eFuse by communicating with the TPS25990EVM-
GUI using the USB-TO-GPIO2 USB interface adapter evaluation module. This EVM has one TPS25990
eFuse (Primary device) and one TPS25985 eFuse (Secondary device) connected in parallel to evaluate the
performance of a 110-A Hot Swap design.
The input power is applied across the connectors T1 and T3, while T2 and T3 provide the output connection for
the EVM; refer to the schematic in Figure 3-1 and EVM test setup in Figure 5-1. TVS diodes D2 and D3 protect
the input from transient overvoltages. Schottky diodes D1 and D5 protect the output by clamping the negative
voltage excursion at the OUT pins of TPS25990 and TPS25985 eFuses within their minimum absolute ratings.
SW1 allows to do power cycle and SW2 enables the quick output discharge (QOD). Power Good (PG) and fault
(FLTb & FLTb2) indicators are provided by LED DG1, DR1, and DR2 respectively. SW3 allows to apply a custom
load transient using on-board MOSFETs, gate drive circuit, and load resistors.
Table 2-1. TPS25990EVM eFuse Evaluation Board Options and Settings
Parameters Options and Settings
VIN UVLO Threshold 5 V
VIN OVLO Threshold 16.7 V in hardware and configurable through PMBus in the range of 3 V to 17.7 V with a
default value of 16.7 V (0x0Eh in VIN_OV_FLT (55h) register)
Overcurrent Blanking Timer Duration
(tTIMER)
Set at 2.18 ms (0x14h in OC_TIMER (E6h) register) by default and configurable through
PMBus in the range of 0 ms to 27.8 ms with a step of 109 µs
Output Voltage Slew Rate (dv/dt)
Selectable in hardware - 1.2 V/ms, 1.8 V/ms, and 12 V/ms and configurable through PMBus in
the range of 50 % to 150 % of nominal slew-rate (Set by hardware) with a default value of 100
% (10b in the 10:9 bits of DEVICE_CONFIG (E4h) register)
Circuit-breaker Threshold (IOCP) Selectable in hardware - 110 A and 70 A with VIREF of 1 V
Inrush Current Limit and Active Current
Sharing Threshold for TPS25990 eFuse
(U1)
Selectable in hardware - 25 A and 19 A of inrush current limit and 40 A and 30 A of active
current sharing threshold with VIREF of 1 V
Inrush Current Limit and Active Current
Sharing Threshold for TPS25985 eFuse
(U2)
Selectable in hardware - 38 A and 32 A of inrush current limit and 60 A and 50 A of active
current sharing threshold with VIREF of 1 V
Reference Voltage for Overcurrent
Protection and Active Current Sharing
(VIREF)
Configurable through PMBus in the range of 0.3 V to 1.2 V with a default value of 1 V (0x32h in
VIREF (E0h) register)
PMBus Address of TPS25990 eFuse 0x46h (7 bit format) with both ADDR0 and ADDR1 pins are connected to GND
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3 Schematic
Figure 3-1 illustrates the EVM schematic.
VIN VOUT
PGND
PGND
0
RZ1
QGND
PGND
QGNDQGNDQGNDQGND
QGND
10.0k
R13
10.0k
R14
50V
3300pF
CD1
PGND
T4
T5
PGND
0.5%
40.2k
RF1
C9
2.2µF
1.0M
R10
1 2
3 4 5 6
J3
50V
3300pF
CD4
PGND
NT1
S1_P
Net-Tie
NT2 S1_N
Net-Tie
S1_P
S1_N
VINVOUT
VIN VOUT
TAP points from inner portion of #24 for VIN and #12 for VOUT
2 1
D3
SMDJ12A
0.1%
402
RL1
25V
4700uF
CO1
PGND
25V
CO2
470uF
35V
C5
1µF
35V
1µF
C1
100nF
50V
C2
100nF
50V
C4
1 4
2 3
SW1
1 4
2 3
SW2
2 1
D2
SMDJ12A
PGND
TP2TP1
QGND
121k
R20
QGND
QGND
VDD
FLTb
SWEN
DVDT
AUX
TEMP
DAC1
PG
EN
ILIM
IMON
IREF
VDD
FLTb
SWEN
TEMP
AUX
DVDT
DAC1
IMON
ILIM
IREF
PG
EN
TP7
2TP2
1TP2
0TP2
9TP1
7TP1
6TP1
5TP1
2TP1
0TP1
TP9
TP8
QGND QGND
VIN VOUT
22 VDD
10
OUT
OUT 11
12
OUT 13
OUT
23 IN
IN
24
IN
25
26 IN
FLT
20
2CMPM
1CMPOUT
3CMPP
4DVDT
18
EN/UVLO
ILIM 8
7
IMON
9
IREF
6ITIMER
17
MODE
PG 19
21 SWEN
TEMP
5 15
NC
NC 16
14
GND
U2
TPS259850RQP
0
RZ4
QGND
PGND
PGND
PGND
35V
C18
1µF
35V
1µF
C19
35V
1µF
C20
PGND PGND
35V
1µF
C16
35V
1µF
C12
100nF
50V
C13
100nF
50V
C15
QGNDQGND
0.1%
402
RL6
0
RM6
QGND
C23
2.2µF
CMPM2
CMPOUT2
CMPP2
ILIM2
CMPM2
CMPP2
CMPOUT2
ILIM2
TP18
TP11
3TP1
4TP1
1 3
J6A
PEC02DABN
2 4
J6B
PEC02DABN
1 3
J4A
PEC02DABN
2 4
J4B
PEC02DABN
1 3
J5A
PEC02DABN
2 4
J5B
PEC02DABN
QGND QGND
QGND QGND
402
RL4
QGND QGND
25V
47nF
C7
50V
33nF
CD3
22nF
50V
CD2
50V
22pF
CM1
R19
R32
1
3
2
D1
1
3
SBR10U45SP5-13
2
D5
SBR10U45SP5-13
1.1k
RM1
1
2 3
J2
PGND
35V
C3
1µF
PGND
35V
C14
1µF
VIN VOUT
VDD
FLTb
SWEN
TEMP
ADDR0
ADDR1
DVDT
AUX
DAC1
VIN
VDD
EN
PG
IREF
ILIM
IMON
FLTb PG
TEMP DVDT IMON ILIM IREF
MODE2ILIM2
ILIM2ILIM
IMONDVDT
SWEN
VIN
EN
VDD
FLT b2
SWEN-SEC
TEMP-SEC
CMPM2
CMPOUT2
DVDT-SEC
CMPP2
VIN VOUT
VIN
VDD
EN-SEC
PG-SEC
MODE2
IREF
ILIM2
IMON
1
T1
B1/0-PCB-L
1
T2
B1/0-PCB-L
1
T3
B1/0-PCB-L
EN-SEC 0
RZ7 EN
QGND
SWEN-SEC 0
RZ5
QGND
SWEN TEMP-SEC 0
RZ6 TEMP
PG-SEC 0
RZ8 PG
10.0k
R39
10.0k
R40
MODE2
FLT b2 MODE2
FLT b2
TP5
TP6
1ADDR1
2ADDR0
3AUX
4DVDT
5TEMP/CMP
6ITIMER/DAC1
7
IMON 8
ILIM 9
IREF
10
OUT 11
OUT
OUT 12
OUT 13
14
GND
15
SDA
16
SCL
17
GPIO4/SMBA
18
EN/UVLO
19
GPIO1/PGOOD
20 GPIO2/FAULTB
21 GPIO3/SWEN
22 VDD
IN
23
24 IN
25 IN
26 IN
U1
TPS25990ARQP
1 2
3 4 5 6 7 8
J7
1 2
3 4 5 6 7 8
J8
75.0k
R33
75.0k
R36
150k
R34
150k
R37
267k
R35
267k
R38
QGND QGND
25V
10pF
C22
QGND
25V
10pF
C21
QGND
0
R2
0
R5
SMBA
0
R7
SCL
SDA
0
R1
0
R4
QGND
0
R3
0
R6
PG
SCL
SMBA
SDA
0
R25
0
0R28
R27
0
R30
0
R24
QGND
10uF
35V
C10
10uF
35V
C11
8VCC
NC
1
NC
2
3NC
SCL 6
5
SDA
7
WP
4
VSS
U4
24FC08T-E/SN
QGND
VCC
8 6
SCL 5
SDA
WP 7
1A0
2A1
3A2 4
VSS
U3
24FC08T-E/ST
QGND
SMBA
PG
EEPROM-SCL
EEPROM-SDA
EEPROM-SCL
EEPROM-SDA
EEPROM-WP
EEPROM-VCC
EEPROM-VCC
10.0k
R15
10.0k
R16
SMBA SCL
10.0k
R18
SDA
ADDR0 ADDR1
EEPROM-WP
Optional EEPROM Circuit
1.37k
where both the eFu ses need to be in parallel, these four pins would be directly connected.
RM3
These components are not mandatory, but are there so that only the primary eFuse can be evaluated
by disconnectin g the Secondary eFu se for a lower current design. In an actual higher current design,
1.82k
RM2
1.10k
RM4 665
RL3
+3P3V
35V
2.2uF
C6
35V
2.2uF
C17
QGND
QGND
Primary eFu se
Secondary eFu se
VIN
0
R29 FLTb
0
R31 SWEN
0
R22 0
R21 SMBA
PG
0
R23
SWEN
FLTb
SCL
ADDR0
SDA
SMBA
ADDR0
SMBA
SDA
SCL
TP27
6TP2
5TP2
3TP2
ADDR1 ADDR1
4TP2
1 2
3 4
5 6
7 8
9 10
J1
5103308-1
330k
R17
3
VIN
TP 4TP VOUT
50V
22pF
CTEMP1 50V
1000pF
CF1
DVDT-SEC 0
RZ9 DVDT
50V
1000pF
C8
1 3
2NC
D4
BZX84-A4V7,215
100k
R11
+3P3V
10.0k
R12
FLT b2
0
R8
+3P3V_Host
+3P3V_Host
0
R26
+3P3V
+3P3V_Host
+3P3V
10.0k
R9
RL2
511
0
RZ2
0
RZ3
25V
47uF
C25
25V
47uF
C26
25V
47uF
C27
25V
10uF
C28
25V
10uF
C29
25V
10uF
C30
25V
10uF
C31
25V
10uF
C32
25V
10uF
C33
PGND
VIN
25V
47uF
C24
RM5 332
RL5
DVDT:
3.3nF -> 12V/ms
33nF -> 1.2V/ms
22nF -> 1.8V/ms
QOD is engaged
1.1V [VSD < VEN <
VUVLO].
between 0.8V and
only when EN is in
SW1 is for Power
IMON: [GIMON -> 1/55000.0]
1820-> 30 A [1V VREF]
1370-> 40 A [1V VREF]
910-> 60 A [1V VREF]
1100-> 50 A [1V VREF]
Cycle. SW2 is for
QOD.[9.8V-13.5V
VIN only]
ILIM: [GILIM-> 1/55000.0],
[VREF -> 1 V]
511 -> 25A Start-up Current
Limit, 40A Active Current
Sharing Threshold,
665 -> 19A Start-up Current
Limit, 30A Active Current
Sharing Threshold,
ILIM2: [GILIM-> 1/55000.0],
[VREF -> 1 V]
332 -> 38A Start-up
Current Limit, 60A Active
Current Sharing Threshold,
402 -> 32A Start-up
Current Limit, 50A Active
Current Sharing Threshold,
Schematic www.ti.com
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QGND1
QGND
G1
D3082-05
QGND QGND
100nF
C37
100nF
C36
QGND
PG
VDD_Pullup
FLTb
QGND
470
R42
470
R43
FLTb2
QGND
470
R41
1VDD OUTH 2
3
OUTL
4
GND
5IN-
6IN+
U7
UCC27511AQDBVRQ1
GD_IN
PGND
PGND PGND
4
7,8
1,2,3
Q4
5,6,
4
7,8
1,2,3
Q5
5,6,
4
7,8
1,2,3
Q6
5,6,
3 2 1
J9
A
A1
VCC
A2
B
B1
REXT/CEXT B2
CLR
C1
CEXT C2
GND D1
QD2
U8
SN74LVC1G123YZPR
R58 10k
10k
R59
16V
100nF
C42
0
RZ10
QGND
QGND
VDD_Pullup
VDD_Pullup
10k
R60
100pF
C43
100pF
C39
100pF
C40
100pF
C41
G2
D3082-05
QGND QGND
21
DR1
21
DR2
Green
21
DG1
1 4
2 3
SW3
TP31
PGND
PGND
2IN OUT 1
GND 3
U6
TLV76050DBZR
VIN
QGND QGND
25V
1µF
C38
1
2 3
Q1
1
2 3
Q2
1
2 3
Q3
R44
R51
R52
VDD_Pullup
VOUT
100nF
CT1
10.0k
R53
20.0k
R54
49.9k
R55
100k
R56
200k
R57
VDD_Pullup
GATE1
GATE1
GATE2
GATE2 GATE3
GATE3
R45 R46 R47 R48 R49 R50
PGND
TP29
VIN +5V Pullup
+5V
2
3
4
5
1S1
76SB05ST
2IN OUT 1
3
GND
U5
TLV76033DBZR
100nF
C34
VIN
QGND
VIN
100nF
C35
QGND
+3P3V
TP28
+3P3V
+3P3V Pullup
VDD_Pullup
TP30
GD EXTERNAL
R53: 1 ms monoshot pulse,
R54: 2 ms monoshot pulse,
R55: 5 ms monoshot pulse,
R56: 10 ms monoshot pulse,
R57: 20 ms monoshot pulse,
Figure 3-1. TPS25990EVM eFuse Evaluation Board Schematic
Note
• To evaluate the performance of TPS25990 at lower currents (< 50 A), RZ5, RZ6, RZ7, RZ8, & RZ9 resistors need to be depopulated, and
R39 & R40 resistors must be populated to disable the secondary eFuse (TPS25985).
• The ground connections for the various components around the TPS25990 & TPS25985 must be wired directly to each other and the GND
pins of respective eFuses. This must be followed by connecting them to the system ground at one point, as implemented using RZ1 and
RZ4 resistors in the EVM schematic. Do not connect the various component grounds through the high current system ground line.
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4 General Configurations
4.1 Physical Access
Table 4-1 lists the TPS25990EVM eFuse Evaluation Board input and output connectors functionality. Table 4-2
and Table 4-3 describe the availability of test points and the functionality of the jumpers. Table 4-4 summarizes
the way to configure the device address. Table 4-5 presents the function of the signal LED.
Table 4-1. Input and Output Connector Functionality
Connector Label Description
T1 VIN (+) Positive terminal for the input power to the EVM
T2 VOUT (+) Positive terminal for the output power from the EVM
T3 PGND (–) Negative terminal for the EVM (common for both input and output)
Table 4-2. Test Points Description
Test Points Label Description
TP1 S1_P Kelvin sensing points to measure
• Combined on-resistance with both TPS25990 & TPS25985 eFuses enabled,
• On-resistance of the primary device, TPS25990 (U1) when the secondary device, TPS25985 (U2)
disabled.
TP2 S1_N
TP3 VIN Input Voltage
TP4 VOUT Output Voltage
TP5 MODE2 MODE selection: Secondary Device
TP6 FLTb2 Open-drain active low fault indication: Secondary Device
TP7 VDD Controller input power
TP8 FLTb Open-drain active low fault indication: Primary Device
TP9 SWEN Open-drain signal to indicate and control power switch ON and OFF status
TP10 TEMP Maximum device die temperature monitor analog voltage output with TPS25990 and TPS25985 in
parallel
TP11 CMPM2 General purpose comparator negative input: Secondary Device
TP12 AUX Auxiliary ADC input channel used to monitor external analog signal through PMBus
Also functions as analog input for fast comparator with internal programmable threshold
TP13 CMPP2 General purpose comparator positive input: Secondary Device
TP14 CMPOUT2 General purpose comparator open-drain output: Secondary Device
TP15 DVDT Start-up output slew rate control
TP16 DAC1 Programmable DAC analog buffered current output
TP17 IMON Load current monitor and overcurrent threshold and fast-trip threshold during steady-state
TP18 ILIM2 Current limit and fast-trip threshold during start-up: Secondary Device
TP19 ILIM Current limit and fast-trip threshold during start-up: Primary Device
TP20 IREF Reference voltage for overcurrent & short-circuit protections, and active current sharing blocks
TP21 PG Open-drain active high power good indication
TP22 EN Active high enable input
TP23 ADDR0 PMBus Address Configuration Pin
TP24 ADDR1 PMBus Address Configuration Pin
TP25 SMBA SMBus™ alert output
TP26 SDA PMBus data line
TP27 SCL PMBus clock line
TP28 +3P3V Pullup 3.3 V pullup power supply generated using a LDO from VIN
TP29 +5V Pullup 5 V pullup power supply generated using a LDO from VIN
TP30 GD EXTERNAL External gate signal for custom load transient
TP31 PGND Supply ground
QGND1 QGND Device ground
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Table 4-2. Test Points Description (continued)
Test Points Label Description
G1 QGND Device ground
G2 QGND Device ground
Table 4-3. Jumper Descriptions and Default Positions
Jumper Label Description
Default
Jumper
Position
J2 SWEN 1-2 Position: The SWEN pullup supply is generated from VIN using a Zener diode 1-2
3-4 Position: The SWEN pullup supply is generated from VIN using a LDO
J3 DVDT
1-2 Position sets the output slew rate to 1.8 V/ms
5-63-4 Position sets the output slew rate to 12 V/ms
5-6 Position sets the output slew rate to 1.2 V/ms
J4 ILIM
1-2 Position sets the inrush current limit to 25 A and the active current sharing threshold to 40 A with
VIREF of 1 V: Primary Device 1-2
3-4 Position sets the inrush current limit to 19 A and the active current sharing threshold to 30 A with
VIREF of 1 V: Primary Device
J5 ILIM2
1-2 Position sets the inrush current limit to 32 A and the active current sharing threshold to 50 A with
VIREF of 1 V: Secondary Device 1-2
3-4 Position sets the inrush current limit to 38 A and the active current sharing threshold to 60 A with
VIREF of 1 V: Secondary Device
J6 IMON
1-2 Position sets the circuit breaker threshold to 70-A with VIREF of 1-V: Both primary and secondary
devices are connected in parallel 1-2
3-4 Position sets the circuit breaker threshold to 110-A with VIREF of 1-V: Both primary and secondary
devices are connected in parallel
J9
EXTERNAL
GATE
SIGNAL
1-2 Position provides the GATE signal to the MOSFETs (Q4 – Q6) from the on-board mono-shot timer
1-2
2-3 Position provides the GATE signal to the MOSFETs (Q4 – Q6) from the external signal generator
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Table 4-4. Configuring Device Address
J7 (ADDR0) J8 (ADDR1) Address
Default
Address
Set in the
EVM
OPEN
OPEN 0x40
0x46
GND (1-2 Position) 0x41
75 kΩ to GND (3-4 Position) 0x42
150 kΩ to GND (5-6 Position) 0x43
267 kΩ to GND (7-8 Position) 0x44
GND (1-2 Position)
OPEN 0x45
GND (1-2 Position) 0x46
75 kΩ to GND (3-4 Position) 0x47
150 kΩ to GND (5-6 Position) 0x48
267 kΩ to GND (7-8 Position) 0x49
75 kΩ to GND (3-4 Position)
OPEN 0x4A
GND (1-2 Position) 0x4B
75 kΩ to GND (3-4 Position) 0x4C
150 kΩ to GND (5-6 Position) 0x4D
267 kΩ to GND (7-8 Position) 0x4E
150 kΩ to GND (5-6 Position)
OPEN 0x50
GND (1-2 Position) 0x51
75 kΩ to GND (3-4 Position) 0x52
150 kΩ to GND (5-6 Position) 0x53
267 kΩ to GND (7-8 Position) 0x54
267 kΩ to GND (7-8 Position)
OPEN 0x55
GND (1-2 Position) 0x56
75 kΩ to GND (3-4 Position) 0x57
150 kΩ to GND (5-6 Position) 0x58
267 kΩ to GND (7-8 Position) 0x59
Table 4-5. LED Descriptions
LED Description
DG1 When ON, indicates that PG is asserted
DR1 When ON, indicates that FLTb is asserted
DR2 When ON, indicates that FLTb2 is asserted
4.2 Test Equipment and Setup
4.2.1 Power supplies
One adjustable power supply with 0-V to 30-V output and 0-A to 200-A output current limit
4.2.2 Meters
Two (2) Digital Multi Meters (DMM)
4.2.3 Oscilloscope
A DPO2024 or equivalent, three 10x voltage probes, and a DC current probe of 150 A rated
4.2.4 USB-to-GPIO Interface Adapter
A communication adapter is required between the TPS25990EVM and the host computer to use
TPS25990EVM-GUI. The GUI communicates with the Texas Instruments USB-TO-GPIO2 USB interface adapter
evaluation module only. This adapter can be purchased at USB-TO-GPIO2 Evaluation board | TI.com.
General Configurations www.ti.com
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TPS25990EVM kit does not include this USB-TO-GPIO2 adapter.
Note
The TPS25990EVM-GUI does not communicate with USB-TO-GPIO USB Interface Adapter EVM.
4.2.5 Loads
One resistive load or equivalent which can tolerate up to 150-A DC load at 24-V
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5 Test Setup and Procedures
In this user's guide, the test procedure is described for TPS25990 eFuse. Make sure the evaluation board has
default jumper settings as shown in Table 5-1.
Table 5-1. Default Jumper Setting for TPS25990EVM eFuse Evaluation Board
J2 J3 J4 J5 J6 J7 J8 J9
1-2 5-6 1-2 1-2 1-2 1-2 1-2 1-2
POWER
SUPPLY
Positive
Negative
LOAD
Positive Negative
Digital
Multimeter
PRINT
HELP
ALPHA
SHIFT
ENTER
RUN
D
GE RF I
A
JB KC L
7
M8 N9 O
D
GD GD G
D
G T 3 U
0
V. WXYZ
TAB
%UTILIZATION
HUB/MAU NIC
2
BNC
4Mb/s
Oscilloscope
Figure 5-1. TPS25990EVM Setup with Test Equipment
Follow these instructions before starting any test and repeat again before moving to the next test:
• Set the power supply output (VIN) to zero volts.
• Turn off the power supply.
• Adjust the jumper positions on EVM to the default configuration as shown in Table 5-1.
• Turn the power supply on and set the power supply output (VIN) to 12 V, 200 A, and keep the power supply
output disabled.
• Enable the power supply output so that the EVM gets the input power supply.
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5.1 Hot Plug
Use the following instructions to measure the inrush current during hot plug event:
1. Configure the jumper J3 position to the desired slew rate mentioned in Table 4-3.
2. Configure the jumpers J4 and J5 positions to the desired current limits during start-up as mentioned in Table
4-3.
3. The reference voltage for overcurrent protection and active current sharing is at 1 V by default.
4. Connect a load of 0.4 Ω between VOUT (Connector T2) and PGND (Connector T3).
5. Connect the negative terminal of the power supply to connector T3.
6. Set the input supply voltage VIN to 12 V and current limit to 100 A. Enable the power supply.
7. Hot plug the positive terminal of the power supply at connector T1.
8. Observe the waveforms at VOUT (TP4) and input current using an oscilloscope to measure the slew rate
and rise time of the VOUT with a given input voltage of 12 V.
Figure 5-2 shows the waveforms captured on the TPS25990EVM with one (1) TPS25990 eFuse and one (1)
TPS25985 eFuse in parallel during the hot plug event.
EN
Input
Current
VOUT
VIN
Figure 5-2. Hot Plug Profile with TPS25990 eFuse and TPS25985 eFuse in Parallel (VIN Stepped Up from
0 V to 12 V, COUT = 15.47 mF, CDVDT = 33 nF, RILIM(TPS25990) = 523 Ω, RILIM(TPS25985) = 402 Ω, VIREF = 1 V, and
RLOAD = 0.4 Ω)
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5.2 Start-up with Enable
Use the following instructions to power up the TPS25990EVM with ENABLE:
1. Configure the jumper J3 position to the desired slew rate mentioned in Table 4-3.
2. Configure the jumpers J4 and J5 positions to the desired current limits during start-up as mentioned in Table
4-3.
3. The reference voltage for overcurrent protection and active current sharing is at 1 V by default. The
reference voltage is also programmed through PMBus using the VIREF (E0h) register if another reference
voltage is needed in the range of 0.3 V to 1.2 V.
4. Set the input supply voltage VIN to 12 V and current limit to 100 A.
5. Connect a load of 0.4 Ω between VOUT (Connector T2) and PGND (Connector T3).
6. Connect the input supply between VIN (Connector T1) and PGND (Connector T3).
7. Turn on the power supply by keeping the device disabled using the switch SW1.
8. Enable the eFuses by releasing the switch SW1.
9. Observe the waveform at VOUT (TP4) and input current using an oscilloscope to measure the slew rate and
rise time of the VOUT with a given input voltage of 12 V.
Figure 5-3 shows the start-up profile with ENABLE using one (1) TPS25990 eFuse and one (1) TPS25985
eFuse in parallel. Figure 5-4 presents the current sharing between two eFuses during start-up.
VIN
VOUT
ENABLE
Input
Current
Figure 5-3. Start-up Profile with ENABLE (VIN = 12
V, EN Stepped Up from 0 V to 3 V, COUT = 18.47 mF,
RLOAD = 1.2 Ω, RILIM(TPS25990) = 523 Ω, RILIM(TPS25985) =
402 Ω, VIREF = 1 V, and CDVDT = 33 nF)
VOUT
VILIM_TPS25990
VILIM_TPS25985
IIN_TPS25990
IIN_TPS25985
Input Current
IIN_TPS25990 + IIN_TPS25985
Figure 5-4. Start-up Profile with ENABLE: Current
Sharing between TPS25990 and TPS25985 eFuses
(VIN = 12 V, EN Stepped Up from 0 V to 3 V, COUT
= 15.47 mF, RLOAD = 0.4 Ω, RILIM(TPS25990) = 523 Ω,
RILIM(TPS25985) = 402 Ω, VIREF = 1 V, and CDVDT = 33 nF)
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5.3 Current Limit Based Start-up Behavior
Use the following instructions to perform the start-up with current limit test:
1. Configure the jumper J3 position to the desired slew rate mentioned in Table 4-3.
2. Configure the jumpers J4 and J5 positions to the desired current limits during start-up as mentioned in Table
4-3.
3. The reference voltage for overcurrent protection and active current sharing is at 1 V by default. The
reference voltage can also be programmed via PMBus using the VIREF (E0h) register if another reference
voltage is needed in the range of 0.3 V to 1.2 V.
4. Set the input supply voltage VIN to 12 V and current limit to 100 A.
5. Connect a load of 0.45 Ω between VOUT (Connector T2) and PGND (Connector T3).
6. Connect the input supply between VIN (Connector T1) and PGND (Connector T3).
7. Turn on the power supply by keeping the device disabled using the switch SW1.
8. Enable the eFuse by releasing the switch SW1.
9. Observe the waveform at VOUT (TP4) and input current using an oscilloscope. The main intention of this
test is to observe the output voltage and input current profiles and time required to complete the inrush
with two different current limit set points during start-up having all other test conditions identical. The inrush
current hits the current limit set point in one case, but does not in the next.
Figure 5-5 shows the current limit-based start-up behavior on the TPS25990EVM having one TPS25990 eFuse
and one TPS25985 eFuse in parallel with RILIM(TPS25990) of 665 Ω and RLIM(TPS25985) of 499 Ω.
VIN
VOUT
Input Current
PG
Figure 5-5. Start-up with Current Limit Response in TPS25990EVM (VIN = 12 V, EN Stepped Up from 0 V to
3 V, RILIM(TPS25990) = 665 Ω, RLIMI(TPS25985) = 499 Ω, VIREF = 1 V, COUT = 18.47 mF, RLOAD = 0.45 Ω, and CDVDT
= 33 nF)
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5.4 Power Up into Short
Use the following instructions to perform the power up into short test:
1. Set the input supply voltage VIN to 12 V and current limit to 100 A. Keep the power supply OFF.
2. Short the output of the EVM. For example, VOUT (Connector T2) to PGND (Connector T3) through a short
and thick cable to make sure the short-circuited path impedance is minimum as possible.
3. The reference voltage for overcurrent protection and active current sharing is at 1 V by default.
4. Configure the jumpers J4 and J5 positions to the desired current limits during start-up as mentioned in Table
4-3.
5. Keep the eFuses disabled by pushing the switch SW1.
6. Turn ON the power supply.
7. Enable the eFuses by releasing the switch SW1.
Figure 5-6 shows the test waveforms of power up into output short on the TPS25990EVM with one TPS25990
eFuse and one TPS25985 eFuse in parallel. Figure 5-7 presents the current sharing between two eFuses during
start-up into short.
Note
During power-up into short, a thermal fold-back results in the current flowing through the device being
less than the calculated value of the current limit during start-up.
VIN
VOUT
Output Current
EN
Figure 5-6. Power Up into Output Short Response
in TPS25990EVM (VIN = 12 V, EN Stepped Up from
0 V to 3 V, RILIM(TPS25990) = 665 Ω, RILIM(TPS25985) =
499 Ω, VIREF = 1 V, and OUT Shorted to PGND)
VIN
VOUT
VILIM_TPS25990
VILIM_TPS25985
IIN_TPS25990
IIN_TPS25985
IIN_TPS25990 + IIN_TPS25985
Figure 5-7. Power Up into Output Short Response
in TPS25990EVM: Current Sharing between
TPS25990 and TPS25985 eFuses (VIN = 12 V, EN
Stepped Up from 0 V to 3 V, RILIM(TPS25990) = 665
Ω, RLIMI(TPS25985) = 499 Ω, VIREF = 1 V, and OUT
Shorted to PGND)
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5.5 Overvoltage Lockout
Use the following instructions to perform the overvoltage protection test:
1. Set the input supply voltage VIN to 12 V and the current limit to 100 A. Connect the supply between VIN
(Connector T1) and PGND (Connector T3) and enable the power supply.
2. Apply a load of 1.2 Ω between VOUT (Connector T2) and PGND (Connector T3).
3. Increase the input supply VIN from 12 V to 18 V and observe the waveforms using an oscilloscope.
Note
The input TVS diodes need to be removed during the overvoltage protection test. Make sure to put
them back after this experiment.
Figure 5-8 shows overvoltage lockout response of TPS25990 eFuse on TPS25990EVM.
VIN
VOUT
PG
Load
Current
Figure 5-8. Overvoltage Lockout Response of TPS25990 eFuse (VIN Ramped Up from 12 V to 18 V, COUT =
470 μF, and RLOAD = 1.2 Ω)
5.6 Transient Overload Performance
Use the following instructions to observe the transient overload performance:
1. The overcurrent blanking timer duration (tTIMER) is 2.18 ms by default. The overcurrent blanking timer
duration can be programmed via PMBus using the OC_TIMER (E6h) register if another timer duration is
needed in the range of 0 ms to 27.8 ms.
2. The reference voltage for overcurrent protection and active current sharing is at 1 V by default. The
reference voltage can also be programmed via PMBus using the VIREF (E0h) register if another reference
voltage is needed in the range of 0.3 V to 1.2 V.
3. Place jumper J6 in a good position to set required circuit breaker threshold (IOCP) as per Table 4-3.
4. Set the input supply voltage VIN to 12 V and current limit of 200 A.
5. Connect the power supply between VIN (Connector T1) and PGND (Connector T3) and enable the power
supply.
6. Now apply an overload in the range of IOCP < ILOAD < 2 × IOCP between VOUT (Connector T2) and PGND
(Connector T3) for a time duration less than tTIMER decided by using the OC_TIMER (E6h) register through
PMBus.
7. Observe the waveforms using an oscilloscope.
Figure 5-9 shows transient overload performance in TPS25990EVM with one TPS25990 eFuse and one
TPS25985 eFuse in parallel. Figure 5-10 presents the current sharing between two eFuses during the transient
overload.
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VIN
VOUT
VIMON
Output
Current
Figure 5-9. Transient Overload Performance in
TPS25990EVM (VIN = 12 V, tITIMER = 20 ms, COUT
= 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT
Ramped from 85 A to 140 A then 85 A within 15
ms)
VIMON
VILIM_TPS25990
VILIM_TPS25985
IOUT_TPS25990
IOUT_TPS25985
Output Current
Figure 5-10. Transient Overload Performance
in TPS25990EVM: Current Sharing between
TPS25990 and TPS25985 eFuses (VIN = 12 V, tITIMER
= 20 ms, COUT = 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF
= 1 V, IOUT Ramped from 85 A to 140 A then 85 A
within 15 ms)
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5.7 Overcurrent Event
Use the following instructions to perform the overcurrent test on TPS25990 eFuse:
1. The overcurrent blanking timer duration (tTIMER) is 2.18 ms by default. The overcurrent blanking timer
duration can be programmed via PMBus using the OC_TIMER (E6h) (E6h) register if another timer duration
is needed in the range of 0 ms to 25.5 ms.
2. The reference voltage for overcurrent protection and active current sharing is at 1 V by default. The
reference voltage can also be programmed via PMBus using the VIREF (E0h) register if another reference
voltage is needed in the range of 0.3 V to 1.2 V.
3. Place jumper J6 in a good position to set required circuit breaker threshold (IOCP) as per Table 4-3.
4. Set the input supply voltage VIN to 12 V and current limit to 200 A.
5. Connect the power supply between VIN (Connector T1) and PGND (Connector T3) and enable the power
supply.
6. Now apply an overload in the range of IOCP < ILOAD < 2 × IOCP between VOUT (Connector T2) and PGND
(Connector T3) for a time duration more than tTIMER decided by using the OC_TIMER (E6h) register through
PMBus.
7. Observe the waveforms using an oscilloscope.
Figure 5-11 shows the circuit breaker response in TPS25990EVM with one TPS25990 eFuse and one
TPS25985 eFuse in parallel. Figure 5-12 presents the current sharing between two eFuses during the circuit
breaker event.
VIN
VOUT
VIMON
Output Current
Figure 5-11. Overcurrent Performance in
TPS25990EVM (VIN = 12 V, tITIMER = 20 ms, COUT
= 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT
Ramped from 85 A to 140 A then 85 A within 30
ms)
VIMON
VILIM_TPS25990
VILIM_TPS25985
IOUT_TPS25990
IOUT_TPS25985
Output Current
Figure 5-12. Overcurrent Performance in
TPS25990EVM: Current Sharing between
TPS25990 and TPS25985 eFuses (VIN = 12 V, tITIMER
= 10 ms, COUT = 470 μF, RIMON = 1.47 ∥ 1.1 kΩ, VIREF
= 1 V, IOUT Ramped from 85 A to 140 A then 85 A
within 15 ms)
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SLVUCH7A – SEPTEMBER 2022 – REVISED JUNE 2023
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5.8 Provision to Apply Load Transient and Overcurrent Event Using an Onboard Switching
Circuit
The TPS25990EVM provides an add-on circuit to facilitate load transients and persistent overcurrent events. The
implementation consists of three low side MOSFETs (Q4, Q5, and Q6) and a mono-shot gate driver circuit (U7
and U8) as well as six onboard load resistors of 1 Ω each (R45 to R50) in parallel. Using a single pole single
through (SPST) switch (S1), the mono-shot gate driver generates a gate signal lasting 1 ms, 2 ms, 5 ms, 10
ms, and 20 ms. By pressing the switch SW3, the low side MOSFETs are turned on for that specific duration,
creating a load transient on the steady-state load above. Use the following instructions to apply a load transient
or persistent overcurrent event using this onboard switching circuit:
1. The overcurrent blanking timer duration (tTIMER) is 2.18 ms by default. The overcurrent blanking timer
duration can be programmed via PMBus using the OC_TIMER (E6h) register if another timer duration is
needed in the range of 0 ms to 27.8 ms.
2. The reference voltage for overcurrent protection and active current sharing is at 1 V by default. The
reference voltage can also be programmed via PMBus using the VIREF (E0h) register if another reference
voltage is needed in the range of 0.3 V to 1.2 V.
3. Configure the jumper J6 in a good position to set required circuit breaker threshold (IOCP) as per Table 4-3.
4. Set the input supply voltage VIN to 12 V and current limit to 200 A.
5. Connect the power supply between VIN (Connector T1) and PGND (Connector T3) and enable the power
supply.
6. Connect a steady-state load between VOUT (Connector T2) and PGND (Connector T3).
7. Use the single pole single through (SPST) switch (S1) to configure the transient load turn on duration. Press
the switch SW3 to turn on the Q4, Q5, and Q6 MOSFETs, which creates a load transient of 72 A (typical)
between VOUT and PGND with 12 V output.
8. Observe the waveforms of VOUT (TP4), MOSFET GATE (J9), and input current using an oscilloscope.
Another option is to apply a custom load transient using an external function generator, connected between
TP30 and TP31, and the shunt of jumper J9 set to "2-3".
CAUTION
In that case, make sure to limit the transient load current magnitude to a safe level for reliable
operation of the load resistors (R45 to R50) based on their maximum permissible peak pulse power
vs pulse duration plot.
Figure 5-13 and Figure 5-14 show the test waveforms of transient overload and persistent overload events
respectively using the onboard switching circuit.
VOUT
GATE signal to
Q4, Q5, and Q6
Input Current
Figure 5-13. Transient Overload Performance
in TPS25990EVM Using the Onboard Switching
Circuit (VIN = 12 V, tITIMER = 14 ms, COUT = 1470 μF,
RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT(Steady-State) =
85 A, and IOUT(Transient) = 65 A for 9 ms)
VOUT
GATE signal to
Q4, Q5, and Q6
Input Current
Figure 5-14. Persistent Overload Performance
in TPS25990EVM Using the Onboard Switching
Circuit (VIN = 12 V, tITIMER = 14 ms, COUT = 1470 μF,
RIMON = 1.47 ∥ 1.1 kΩ, VIREF = 1 V, IOUT(Steady-State) =
85 A, and IOUT(Transient) = 65 A for 18 ms)
Test Setup and Procedures www.ti.com
20 TPS25990 Evaluation Module for eFuse SLVUCH7A – SEPTEMBER 2022 – REVISED JUNE 2023
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