Panasonic MA27P120G User manual

PIN diodes
Publication date: October 2007 SKL00027AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA27P120G
Silicon planar type
For high frequency switch
Features
Small terminal capacitance Ct
Low forward dynamic resistance rf
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Forward current IF100 mA
Power dissipation *PD150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Note) *: With a glass epoxy PC board.
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current VFIF= 10 mA 1.0 V
Reverse current IRVR= 60 V 100 nA
Terminal capacitance CtVR= 1 V, f = 1 MHz 0.27 pF
Forward dynamic resistance *rfIF= 10 mA, f = 100 MHz 0.8 W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *: rfmeasurement device: agilent model 4291B
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: U

MA27P120G
2 SKL00027AEDSKL00027AED
This product complies with RoHS Directive (EU 2002/95/EC).
IFVFIRVRCtVR
rfIF
0.4 0.6 0.8 1.0
10−2
10−1
1
10
103
102
MA27P12_ IF - VF
Forward current IF(mA)
Forward voltage VF(V)
Ta =25°C
020 6040
10−1
1
102
10
103
MA27P12_ IR - VR
Reverse current IR(pA)
Reverse voltage VR(V)
Ta =25°C
04 8 12 2016
0
0.1
0.2
0.3
0.5
0.4
MA27P12_ Ct - VR
Terminal capacitance Ct(pF)
Reverse voltage VR(V)
f = 1 MHz
Ta =25°C
10−210−11 10
10−1
1
10
102
103
MA27P12_ rf-IF
f = 100 MHz
OSC level = 0 dBm
Ta =25°C
Forward dynamic resistance rf(Ω)
Forward current IF(mA)

MA27P120G
SKL00027AED 3
This product complies with RoHS Directive (EU 2002/95/EC).
SSSMini2-F3 Unit: mm
1.40 ±0.05
0.27 +0.05 −0.03
2
1
0.60 ±0.05
1.00 ±0.05
0.52 ±0.03
0 to 0.05
(5°)
(0.27)
0.13 +0.05 −0.02
(5°)
0.20 ±0.05

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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