Panasonic Schottky Barrier Diodes MA3X721 (MA721) User manual

Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00080CED
MA3X721 (MA721)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•Forward current (Average) IF(AV) =200 mA rectification is
possible
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Reverse voltage VR30 V
Maximum peak reverse voltage VRM 30 V
Forward current IF200 mA
Peak forward current IFM 300 mA
Non-repetitive peak forward IFSM 1A
surge current *
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=200 mA 0.55 V
Reverse current IRVR=30 V 50 µA
Terminal capacitance CtVR=0 V, f =1 MHz 30 pF
Reverse recovery time *trr IF=IR=100 mA 3.0 ns
Irr =10 mA, RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Internal Connection
Marking Symbol: M1M
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 100 mA
IR= 100 mA
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 10 mA
trtp
trr
VR
IF
t
t
A
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. *: trr measurement circuit
Note) The part number in the parenthesis shows conventional part number.
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3X721
SKH00080CED
IFVFIRVRVFTa
IRTaCtVR
10
−2
0 0.1 0.2 0.3 0.4 0.5 0.6
10
−1
1
10
10
2
10
3
Forward voltage VF(V)
Forward current IF(mA)
T
a = 150°C−20°C
100°C 25°C
10
−1
0102030
10
5
10
4
10
3
10
2
10
1
Reverse voltage VR(V)
Reverse current IR(µA)
T
a = 150°C
100°C
25°C
0
0.1
0.2
0.3
0.4
0.5
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 200 mA
100 mA
1 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(µA)
V
R = 30 V
10 V
5 V
0
8
16
24
32
0 5 10 15 20 25 30
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
f = 1 MHz
T
a = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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