Panasonic MAZWxxxHG Series User manual

ESD Diodes
1
Publication date: September 2007 SKE00035AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZWxxxHG Series
Silicon planar type
For surge absorption circuit
■Features
•Two elements anode-common type
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Total power dissipation *Ptot 150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Common Electrical Characteristics Ta= 25°C ±3°C
Note) *:P
tot = 150 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage *VZIZSpecified value V
Zener rise operating resistance RZK IZSpecified value Ω
Zener operating resistance RZIZSpecified value Ω
Reverse current IRVRSpecified value µA
Refer to the list of the
electrical characteristics
within part numbers
1
3
2
Note) 1. Measuring methods are based JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage is ±10 kV
Test method: IEC1000-4-2 (C =150 pF, R =330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZmesurement.
VZvalue measured at other temperature must be adjusted to VZ(25°C)
VZguaranted 20 ms after current flow.
■Package
•Code
SSSMini3-F2
•Pin Name
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
■Internal Connection

MAZWxxxHG Series
SKE00035AED
2
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZW062HG 5.8 6.2 6.6 5 0.2 4 50 100 62
MAZW068HG 6.4 6.8 7.2 5 0.1 4 30 60 68
MAZW082HG 7.7 8.2 8.7 5 0.1 5 30 60 82
MAZW100HG 9.4 10.0 10.6 5 0.05 7 30 60 10
MAZW120HG 11.4 12.0 12.7 5 0.05 9 30 60 12
■Electrical characteristics within part numbers Ta= 25°C ±3°C
VZ(V) IR (µA) RZ (Ω)R
ZK (Ω)
IZVR I
Z
=5 mA I
Z
=0.5 mA
Min Nom Max (mA) Max (V) Max Max
Part number Marking symbol
Note) 1. The VZvalue is the one after power application for 20 ms at Ta=25°C.
2. The zener voltage temperature coefficient is the one for Tj=25°C to 150°C.
Zener voltage Zener operating
resistance
Reverse current
(DC)
Ptot TaIZVZIFVF
RZIZSZIZCtVR
10 −3
468101214
10 −2
10 −1
1
10
102
Zener voltage VZ(V)
Zener current IZ(mA)
Ta= 25°C
MAZW120HG MAZW100HG MAZW082HG MAZW068HG MAZW062HG
0
020
0
1601208040
50
100
150
200
250
Ambient temperature T
a
(°C)
Total power dissipation P
tot
(mW)
Print foil
t =0.035 mm
K
A
10 mm
0.8 mm
10 mm
10 −2
0 0.2 0.4 0.6 1.00.8 1.
2
10 −1
1
10
102
Forward voltage VF(V)
Forward current IF(mA)
Ta= 25°C
10
−1
1
10
10
2
Zener operating resistance R
Z
(Ω)
11010
2
Zener current I
Z
(mA)
T
a = 25°C
MAZW082HG
MAZW100HG
MAZW068HG
MAZW120HG
MAZW062HG
0
12
10
8
6
4
2
0 10203040506
0
Zener current IZ(mA)
Temperature coefficient of zener voltage
SZ(mV / °C)
Ta= 25°C to 150°C
MAZW082HG
MAZW068HG
MAZW062HG
MAZW100HG
MAZW120HG
0
10
0
20
4812
30
Terminal capacitance C
t
(pF)
Reverse voltage V
R
(V)
T
a = 25°C
MAZW068HG
MAZW062HG
MAZW082HG
MAZW100HG
MAZW120HG

MAZWxxxHG Series
3
SKE00035AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.20 +0.05 −0.02 0.13 +0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.51 ±0.04
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
12
(0.27)
5°
0 to 0.05 (0.5)
5°

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semiconductors described in this book
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defect which may arise later in your equipment.
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