Panasonic MA3X789 (MA789) User manual

Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00089CED
MA3X789 (MA789)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■Features
•Forward current (Average) IF(AV) =500 mA rectification is
possible
•Reverse voltage VR=60 V is guaranteed
■Absolute Maximum Ratings Ta=25°C
Marking Symbol: M3W
Parameter Symbol Rating Unit
Reverse voltage VR60 V
Maximum peak reverse voltage VRM 60 V
Forward current (Average) IF(AV) 500 mA
Non-repetitive peak forward IFSM 2A
surge current *
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=500 mA 0.65 V
Reverse current IRVR=50 V 100 µA
Terminal capacitance CtVR=0 V, f =1 MHz 60 pF
Reverse recovery time *trr IF=IR=100 mA 4.5 ns
Irr =0.1 IR, RL=100 Ω
■Electrical Characteristics Ta=25°C ±3°C
Internal Connection
12
3
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF=100 mA
IR=100 mA
RL=100 Ω
10%
Input Pulse Output Pulse
Irr =0.1 IR
trtp
trr
VR
IF
t
t
A
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40
+0.10
–0.05
(0.65) 1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2 –0.1
1.1
+0.3 –0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz. 4. *: trr measurement circuit
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3X789
SKH00089CED
IFVFIRVRCtVR
IF(surge) tW
10
−2
0 0.2 0.4 0.6
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
=125°C
75°C
25°C
10
−1
0 20 40 60 80 100 120
1
10
10
2
10
3
10
4
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
75°C
25°C
0
40
80
120
0204060
Reverse voltage V
R
(V)
Terminal capacitance C
t
(pF)
10 −1
10 −1
1
10
102
103
102 101
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
IF(surge)
Ta=25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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defect which may arise later in your equipment.
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