Panasonic Schottky Barrier Diodes MA3SE020G User manual

Schottky Barrier Diodes (SBD)
1
Publication date: October 2007 SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3SE020G
Silicon epitaxial planar type
For cellular phone
■Features
•High-frequency wave detection is possible
•Low forward voltage VF
•Small terminal capacitance Ct
■Absolute Maximum Ratings Ta=25°C
■Electrical Characteristics Ta=25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VF1 IF=1 mA 0.40 V
VF2 IF=35 mA 1.0
Reverse current IRVR=15 V 200 nA
Terminal capacitance CtVR=0 V, f =1 MHz 1.2 pF
Forward dynamic resistance rfIF=5 mA 9 Ω
Parameter Symbol Rating Unit
Reverse voltage VR20 V
Maximum peak reverse voltage VRM 20 V
Forward current Single IF35 mA
Series 25
Peak forward Single IFM 100 mA
current Series 70
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
■Package
•Code
SSMini3-F3
•Pin Name
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■Marking Symbol: M6B
■Internal Connection
12
3

2
MA3SE020G
SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
IRVRCtVR
0
1.2
0.8
0.4
01020
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
Ta= 25°C
IF(AV) Ta
10
−2
10
−3
0 5 10 15 20 25 3
0
10
−1
1
10
10
2
Reverse voltage VR(V)
Reverse current IR(µA)
T
a
=125°C
25°C
75°C
0
10
20
40
30
50
0
DC
40 16012080
Tj=125°C
Ambient temperature Ta(°C)
Forward current (Average) IF(AV) (mA)
tp
T
IF

MA3SE020G
3
SKH00213AED
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05
−0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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