Panasonic 2SA1790J User manual

Transistors
1
Publication date: July 2003 SJC00291AED
2SA1790J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626J
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta=25°C ±3°C
Rank B C
hFE 70 to 140 110 to 220
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Unit: mm
Marking Symbol: E
0.27 ±0.02
3
12
0.12
+0.03
–0.01
0.80
±0.05
(0.80)
0.85
1.60
±0.05
0 to 0.02
0.10 max.
0.70
+0.05 –0.03
(0.375)
5˚
5˚
1.60
+0.05
–0.03
1.00 ±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter voltage VBE VCE =−10 V, IC=−1 mA −0.7 V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−20 V, IB=0 −100 µA
Emitter-base cutoff current (Collector open) IEBO VEB =−5 V, IC=0 −10 µA
Forward current transfer ratio *hFE VCE = −10 V, IC= −1 mA 70 220 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.1 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 150 300 MHz
Noise figure NF VCB =−10 V, IE=1 mA, f =5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB =−10 V, IE=1 mA, f =2 MHz 22 50 Ω
Reverse transfer capacitance (Common emitter) Cre VCB =−10 V, IE=1 mA, f =10.7 MHz 1.2 2.0 pF
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1790J
2SJC00291AED
PCTaICVCE VCE(sat) IC
hFE ICCob VCB
0 80 12040
0
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0
0−12−2−10−4−8−6
−25
−20
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
−15
−10
−5
−200 µA
−150 µA
−100 µA
−50 µA
I
B
=−250 µA
T
a
=25°C
−0.01
−1
−10
−1
−10 −100
IC/ IB=10
−0.1
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−0.1 −1−100−10
0
100
80
60
40
20
Forward current transfer ratio hFE
Collector current IC(mA)
V
CE
=−10 V T
a
=75°C
25°C
−25°C
0−5−10 −15 −20
1
100
10
f =1 MHz
T
a
=25°C
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
Collector-base voltage V
CB
(V)
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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