Panasonic 2SB1679 User manual

Transistors
1
Publication date: February 2003 SJC00097BED
2SB1679
Silicon PNP epitaxial planar type
For low-frequency amplification
■Features
•Large collector output capacitance (Common base, input open cir-
cuited) Cob
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −10 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−0.5 A
Peak collector current ICP −1A
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank R S
hFE1 130 to 220 180 to 350
Marking Symbol: 3V
2.1
±0.1
1.3 ±0.1
0.3
+0.1
–0.0
2.0 ±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5°
10°
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −15 V
Collector-emitter voltage (Base open) VCEO IC=−1 mA, IB=0 −10 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −100 nA
Forward current transfer ratio *1hFE1 *2VCE =−2 V, IC=−0.5 A 130 350 
hFE2 VCE =−2 V, IC=−1 A 60
Collector-emitter saturation voltage *1VCE(sat) IC=−0.4 A, IB=−8 mA −0.16 −0.30 V
Base-emitter saturation voltage *1VBE(sat) IC=−0.4 A, IB=−8 mA −0.8 −1.2 V
Transition frequency fTVCB =−10 V, IE=50 mA, f =200 MHz 130 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 22 pF
(Common base, input open circuited)
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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