Panasonic 2SA2078 User manual

Transistors
1
Publication date: August 2003 SJC00302AED
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
■Features
•High forward current transfer ratio hFE
•SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=−10 µA, IE=0 −60 V
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −50 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −7V
Collector-base cutoff current (Emitter open) ICBO VCB =−20 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−10 V, IB=0 −100 µA
Forward current transfer ratio hFE VCE =−10 V, IC=−2 mA 180 390 
Collector-emitter saturation voltage VCE(sat) IC=−100 mA, IB=−10 mA −0.2 −0.5 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 80 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 2.2 pF
(Common base, input open circuited)
■Electrical Characteristics Ta=25°C ±3°C
1.20±0.05
0.52±0.03
0 to 0.01
0.15 max.
5˚
0.15 min.
0.80±0.050.15 min.
0.33
(0.40)(0.40)
12
3
5˚
0.80±0.05
1.20±0.05
+0.05
–0.02 0.10+0.05
–0.02
0.23+0.05
–0.02
Unit: mm
Marking Symbol: 7H
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2078
2SJC00302AED
IBVBE ICVBE VCE(sat) IC
PCTaICVCE ICIB
hFE ICCob VCB
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
020 40 60 80 100 120 140
0
20
40
60
80
100
120
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0
−10
−20
−30
−40
−50
−60
0−2−4−6−8−10 −12
T
a
= −300 µA
−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
T
a
=25°C
Base current IB(mA)
Collector current IC(mA)
0− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2
0
−140
−120
−100
−80
−60
−40
−20
V
CE
=−10 V
T
a
=25°C
Base-emitter voltage VBE (V)
Base current IB(mA)
0− 0.8−0.2 −0.4 − 0.6
0
−1.0
−2.0
−2.5
−3.0
−3.5
− 0.5
−1.5
V
CE
=−10 V
T
a
=25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0−0.4
−0.2 −1.0 −1.2
−0.8
−0.6
−20
−40
−60
−80
−100
−120
0
T
a
=75°C
25°C
−25°C
V
CE
=−10 V
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
T
a
=75°C
25°C
−25°C
−1−10 −100
−0.01
−0.1
−1I
C
/ I
B
=10
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −100 −1 000
0
300
250
200
150
100
50
T
a
=75°C
25°C
−25°C
V
CE
=−10 V
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
−8−16 −24 −32 −40
0
10
1
f =1 MHz
T
a
=25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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