Panasonic 2SC4808G User manual

Transistors
1
Publication date: May 2007 SJC00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4808G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■Features
•Low noise figure NF
•High forward transfer gain S21e2
•High transition frequency fT
•SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=015V
Collector-emitter voltage (Base open) VCEO IC=100 µA, IB=010 V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Emitter-base cutoff current (Collector open) IEBO VEB =2 V, IC=01µA
Forward current transfer ratio *hFE VCE =8 V, IC=20 mA 50 150 300 
Transition frequency fTVCE =8 V, IC=15 mA, f =0.8 GHz 5 6 GHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 0.7 1.2 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE =8 V, IC=15 mA, f =0.8 GHz 11 14 dB
Maximum unilateral power gain GUM VCE =8 V, IC=15 mA, f =0.8 GHz 15 dB
Noise figure NF VCE =8 V, IC=7 mA, f =0.8 GHz 1.3 2.0 dB
■Electrical Characteristics Ta=25°C ±3°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 2V
Collector current IC80 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
■Package
•Code
SSMini3-F3
•Marking Symbol: 3M
•Pin Name
1. Base
2. Emitter
3. Collector

2SC4808G
2SJC00395AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
040 80 120
0
20
40
60
80
100
120
140
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
20
30
10
40
50
60
70
80
90
IB=5mA
Ta=25°C
4 mA
3 mA
2 mA
1 mA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 0.2 0.6 0.8 1.0 1.20.4 1.4
0
80
20
40
60
VCE = 8 V
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
Collector current IC(mA)
Collector-emitter saturation voltage VCE(sat) (V)
0.01
0.1
0.1
1
1 10 100
T
a
=85°C
−25°C
25°C
I
C
/ I
B
= 10
Ta= 85°C
25°C
−25°C
VCE = 8 V
Collector current IC(mA)
Forward current transfer ratio hFE
1 10 100
0
250
200
150
100
50
04010 3020
f =1 MHz
T
a
= 25°C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
10
1
0.1

This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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