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Panasonic 2SC2406 User manual

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Transistors
Publication date : October 2008 SJC00422AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2406
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1035
Features
Low noise voltage NV
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 55 V
Collector-emitter voltage (Base open) VCEO 55 V
Emitter-base voltage (Collector open) VEBO 5 V
Collector current IC50 mA
Peak collector current ICP 100 mA
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= 10 mA, IE= 0 55 V
Collector-emitter voltage (Base open) VCEO IC= 2 mA, IB= 0 55 V
Emitter-base voltage (Collector open) VEBO IE= 10 mA, IC= 0 5 V
Base-emitter voltage VBE VCE = 1 V, IC= 100 mA 0.7 1.0 V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE= 0 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCB = 10 V, IB= 0 1 mA
Forward current transfer ratio *hFE VCE = 5 V, IC= 2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC= 100 mA, IB= 10 mA 0.6 V
Transition frequency fTVCB = 5 V, IE= –2 mA, f = 200 MHz 200 MHz
Noise voltage
NV VCB = 10 V, IC= 1 mA, GV= 80 dB,
Rg= 100 kΩ, Function = FLAT 110 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
Merking symbol TR TS TT
Package
Code
Mini3-G1
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: T
2SC2406
2SJC00422AED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE VCE(sat) IC hFE IC
0 16040 12080
0
240
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
2SC2406_PC-Ta
0 1284
0
160
120
40
100
140
80
20
60
Ta=25°C
IB=350 µA
300 µA
250 µA
200 µA
150 µA
100 µA
50 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
2SC2406_IC-VCE
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
VCE =5 V
Ta=75°C−25°C
25°C
Base-emitter voltage VBE (V)
Collector current IC(mA)
2SC2406_IC-VBE
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
2SC2406_VCE(sat)-IC
0.1 1 10 100
0
1000
800
600
400
200
VCE =5 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
2SC2406_hFE-IC
−0.1 −1−10 −100
0
500
400
300
200
100
VCB =5 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
2SC2406_fT-IE
0.1 1 10 100
0
10
8
6
4
2
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
2SC2406_Cob-VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
1 10 100
0
160
120
40
80
IC=1 mA
GV=80 dB
Function =FLAT
4.7 kΩ
Rg=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector-emitter voltage VCE (V)
2SC2406_NV-VCE
0 0.50.40.1 0.30.2
0
160
120
40
80
VCE =5 V
Ta=25°C
Base current IB(mA)
Collector current IC(mA)
2SC2406_IC-IB
fTIECob VCB NV VCE
PCTaICVCE ICIB
2SC2406
SJC00422AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
NV RgNV Rg
1 10 100
0
300
240
120
180
60
IC=1 mA
GV=80 dB
Function =RIAA
4.7 kΩ
Rg=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector-emitter voltage VCE (V)
2SC2406_NV-VCE
0.01 0.1 1
0
160
120
40
80
VCE =10 V
GV=80 dB
Function =FLAT
4.7 kΩ
Rg=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC(mA)
2SC2406_NV-IC
1 10 100
0
160
120
40
80
VCE =10 V
GV=80 dB
Function =FLAT
0.1 mA
IC=1 mA
0.5 mA
Noise voltage NV (mV)
Signal source resistance Rg(kΩ)
2SC2406_NV-Rg
1 10 100
0
300
240
120
180
60
VCE =10 V
GV=80 dB
Function =RIAA
0.1 mA
IC=1 mA
0.5 mA
Noise voltage NV (mV)
Signal source resistance Rg(kΩ)
2SC2406_NV-Rg
0.01 0.1 1
0
300
240
120
180
60
VCE =10 V
GV=80 dB
Function =RIAA
4.7 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC(mA)
2SC2406_NV-IC
NV VCE NV ICNV IC
2SC2406
4SJC00422AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Mini3-G1 Unit: mm
(0.95)
(0.95)
1.9 ±0.1
0.40
1.50
2.8
2.90
3
2
1
5°
0.4 ±0.2
0.16
10°
1.1
1.1
0 to 0.1 (0.65)
+0.10
−0.05
+0.25
−0.05
+0.2
−0.3
+0.20
−0.05
+0.2
−0.1
+0.3
−0.1
+0.10
−0.05
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20080805