Panasonic 2SA1532 User manual

Transistors
1
Publication date: January 2003 SJC00021BED
2SA1532
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −30 V
Collector-emitter voltage (Base open) VCEO −20 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−30 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Base-emitter saturation voltage VBE VCE =−10 µA, IC=−1 mA −0.7 V
Collector-base cutoff current (Emitter open) ICBO VCB =−10 V, IE=0 −0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =−20 V, IB=0 −100 µA
Emitter-base cutoff current (Collector open) IEBO VEB =−5 V, IC=0 −10 µA
Forward current transfer ratio *hFE VCB =−10 V, IE=1 mA 50 220 
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.1 V
Transition frequency fTVCB =−10 V, IE=1 mA, f =200 MHz 150 300 MHz
Noise figure NF VCB =−10 V, IE=1 mA, f =5 MHz 2.8 4.0 dB
Reverse transfer impedance Zrb VCB =−10 V, IE=1 mA, f =2 MHz 22 60 Ω
Common-emitter reverse transfer capacitance Cre VCB =−10 V, IE=1 mA, f =10.7 MHz 1.2 2.0 pF
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5°
10°
Rank A B C
hFE 50 to 100 70 to 140 110 to 220
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: E
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1532
2SJC00021BED
hFE ICCob VCB Cre VCE
PCTaICVCE VCE(sat) IC
fTIEGPICNF IE
0 16040 12080 14020 10060
0
200
160
120
80
40
180
140
100
60
20
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−10−8−2−6−4
0
−30
−25
−20
−15
−10
−5
T
a
=25°C
I
B
=−250 µA
−200 µA
−150 µA
−100 µA
−50 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
−0.1 −1−10 −100
−0.01
−0.1
−1
−10
−100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−0.1 −1−10 −100
0
120
100
80
60
40
20
V
CE
=−10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
6
5
4
3
2
1
f =1 MHz
I
E
=0
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
−1−10 −100
0
5
4
3
2
1
I
C
=−1 mA
f =10.7 MHz
T
a
=25°C
Collector-emitter voltage VCE (V)
Common emitter reverse transfer capacitance C
re
(pF)
0.1 1 10 100
0
600
500
400
300
200
100
VCB =−10 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
−0.1 −1−10 −100
0
24
20
16
12
8
4
V
CE
=−10 V
f =100 MHz
T
a
=25°C
Power gain G
P
(dB)
Collector current I
C
(mA)
0.1 1 10
0
5
4
3
2
1
V
CB
=−10 V
f =100 MHz
T
a
=25°C
Noise figure NF (dB)
Emitter current I
E
(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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