Panasonic 2SC2634 User manual

Transistors
1
Publication date: March 2003 SJC00119BED
2SC2634
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1127
■Features
•Low noise voltage NV
•High forward current transfer ratio hFE
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 55 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC400 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=060V
Collector-emitter voltage (Base open) VCEO IC=1 mA, IB=055V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=07V
Base-emitter voltage VBE VCE =1 V, IC=30 mA 1 V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=0 1 100 nA
Collector-emitter cutoffcurrent (Base open) ICEO VCE =10 V, IB=0 0.01 1.00 µA
Forward current transfer ratio *hFE VCE =5 V, IC=2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 0.6 V
Transition frequency fTVCB =5 V, IE=−2 mA, f =200 MHz 200 MHz
Noise voltage NV VCE =10 V, IC=1 mA, GV=80 dB 150 mV
Rg=100 kΩ, Function =FLAT
■Electrical Characteristics Ta=25°C ±3°C
5.0 ±0.2
0.7 ±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
123
+0.6
–0.2
4.0 ±0.2
5.1
±0.2
12.9
±0.5
2.3
±0.2
0.7
±0.2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC2634
2SJC00119BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB NF IENV IC
0 20016040 12080
0
500
400
300
200
100
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
012108264
0
120
100
80
60
40
20
T
a
=25°C
250 µA
200 µA
350 µA300 µA
150 µA
100 µA
50 µA
I
B
=400 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
V
CE
=5 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
1 000
800
600
400
200
V
CE
=5 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−1−10 −100
0
400
300
100
200
VCB =5 V
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
1 10 100
0
10
8
6
4
2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
−10 −100 −1 000
0
8
6
2
4
V
CE
=5 V
R
g
=1 kΩ
T
a
=25°C
f =100 Hz
10 kHz
1 kHz
Noise figure NF (dB)
Emitter current I
E
(µA)
0.01 0.1 1
0
120
100
80
60
40
20
V
CE
=10 V
G
V
=80 dB
Function =FLAT
5 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current I
C
(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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