Panasonic 2SA2021G User manual

Transistors
Publication date : November 2008 SJC00426BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2021G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5609G
Features
High forward current transfer ratio hFE
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC–100 mA
Peak collector current ICP –200 mA
Collector power dissipation PC100 mW
Junction temperature Tj125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= –10 mA, IE= 0 –60 V
Collector-emitter voltage (Base open) VCEO IC= –100 mA, IB= 0 –50 V
Emitter-base voltage (Collector open) VEBO IE= –10 mA, IC= 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE= 0 – 0.1 mA
Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB= 0 –100 mA
Forward current transfer ratio hFE VCE = –10 V, IC= –2 mA 180 390 
Collector-emitter saturation voltage VCE(sat) IC= –100 mA, IB= –10 mA – 0.3 – 0.5 V
Transition frequency fTVCB = –10 V, IE= 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited)
Cre VCB = –10 V, IE= 0, f = 1 MHz 2.7 15 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3E

2SA2021G
2SJC00426BED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE VCE(sat) IChFE IC
0 40 12080
0
140
40
60
20
100
120
80
2SA2021G_PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−4−8−12
0
−10
−20
−30
−40
−50
−60
−70
2SA2021G_IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
Ta= 25°C
−50 µA
−100 µA
−150 µA
−200 µA
−250 µA
IB= −300 µA
0−0.2 −0.6 −0.8−0.4 −1.0
0
−20
−40
−60
−80
−100
−120
−140
2SA2021G_IC-IB
Collector current IC(mA)
Base current IB(V)
VCE = −10 V
Ta= 25°C
0 − 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4
0
−30
−40
−50
−20
−10
−60
−70
−80
−90
−100
2SA2021G_IC-VBE
Collector current IC(mA)
Base-emitter voltage VBE (V)
VCE = −10 V
Ta= 85°C
25°C
−25°C
−0.1 −1−10 −100
−0.01
−0.1
−1
Collector current IC(mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SA2021G_VCE(sat)-IC
IC/IB=10
Ta= 85°C
25°C
−25°C
−1−10 −100 −1 000
0
300
350
250
50
100
200
150
Collector current IC(mA)
Forward current transfer ratio hFE
2SA2021G_hFE-IC
VCE =−10 V
Ta= 85°C
25°C
−25°C
0−8−24−16 −32 −40
1
100
10
Collector-base voltage VCB (V)
2SA2021G_Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
f =1 MHz
Ta= 25°C
Cob VCB
PCTaICVCE ICIB

2SA2021G
SJC00426BED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
SSSMini3-F2 Unit: mm
0.30 +0.05 −0.02
0.20 +0.05 −0.02 0.13 +0.05
−0.02
(0.4)
(0.4)
0.80 ±0.05
0.80 ±0.05
0.51 ±0.04
1.20 ±0.05
1.20 ±0.05
0.20 ±0.05
3
12
(0.27)
5°
0 to 0.05 (0.5)
5°

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semiconductors described in this book
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