Panasonic 2SA1739 User manual

Transistors
1
Publication date: March 2003 SJC00027BED
2SA1739
Silicon PNP epitaxial planar type
For high speed switching
Complementary to 2SC3938
■Features
•High speed switching
•Low collector-emitter saturation voltage VCE(sat)
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −15 V
Collector-emitter voltage (Base open) VCEO −15 V
Emitter-base voltage (Collector open) VEBO −4V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =−8 V, IE=0 −0.1 µA
Emitter-base cutoff current (Collector open) IEBO VCE =−3 V, IC=0 −0.1 µA
Forward current transfer ratio hFE1 *VCE =−1 V, IC=−10 mA 50 150 
hFE2 VCE =−1 V, IC=−1 mA 30
Collector-emitter saturation voltage VCE(sat) IC=−10 mA, IB=−1 mA −0.1 −0.2 V
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 800 1 500 MHz
Collector output capacitance Cob VCB = −5 V, IE= 0, f = 1 MHz 1 pF
(Common base, input open circuited)
Turn-on time ton Refer to the switching time 12 ns
Turn-off time toff measurement circuit 20 ns
Storage time tstg 19 ns
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
Rank Q R No-rank
hFE1 50 to 120 90 to 150 50 to 150
Marking symbol AXQ AXR AX
Marking Symbol: AX
Product of no-rank is not classified and have no marking symbol for rank.
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA1739
2SJC00027BED
ICVCE VCE(sat) ICVBE(sat) IC
PCTa
hFE ICfTIECob VCB
Switching time measurement circuit
ton , toff Test circuit tstg Test circuit
508 Ω30 Ω
51 Ω
VBB =−10 V
VIN
VCC =−3 V
VIN =9.0 VVIN =−5.8 V
VBB =Ground
VIN =9.8 V
VBB =−8.0 V
VOUT
0.1 µF34 Ω
VIN 0
0
VOUT
VIN
VOUT
90%
90%
90% 10%
10%
tstg
ton toff
90%
2 kΩ62 Ω
51 Ω
VBB
VIN
VCC =−1.5 V
VOUT
0.1 µF52 Ω
0 16040 12080
0
200
160
120
80
40
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−60
−50
−40
−30
−20
−10
T
a
=25°C
−300 µA
−500 µA
−400 µA
−100 µA
−200 µA
I
B
=−600 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
−1−10 −100 −1 000
−0.01
−0.1
−1
−10
−100 I
C
/ I
B
=10
25°C
−25°C
T
a
=75°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−1−10 −100 −1 000
−0.01
−0.1
−1
−10
−100 IC/ IB=10
25°C
−25°C
Ta=75°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
−0.1 −1−10 −100
0
240
200
160
120
80
40
V
CE
=−10 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1 10 100
0
2 400
2 000
1 600
1 200
800
400
VCB =−10 V
f =200 MHz
Ta=25°C
Transition frequency fT(MHz)
Emitter current IE(mA)
−1−10 −100
0
2.4
2.0
1.6
1.2
0.8
0.4
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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