Panasonic 2SB0710A User manual

Transistors
Publication date: October 2008 SJC00413AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0710A
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0602A
Features
Large collector current IC
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO -60 V
Collector-emitter voltage (Base open) VCEO -50 V
Emitter-base voltage (Collector open) VEBO -5V
Collector current IC-0.5 A
Peak collector current ICP -1A
Collector power dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55 to +150 °C
Electrical Characteristics Ta= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC= -10 mA, IE= 0 -60 V
Collector-emitter voltage (Base open) VCEO IC= -10 mA, IB= 0 -50 V
Emitter-base voltage (Collector open) VEBO IE= -10 mA, IC= 0 -5V
Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE= 0 -0.1 mA
Forward current transfer ratio *1hFE1 *2VCE = -10 V, IC= -150 mA 85 340 
hFE2 VCE = -10 V, IC= -500 mA 40 
Collector-emitter saturation voltage *1VCE(sat) IC= -300 mA, IB= -30 mA -0.35 -0.60 V
Base-emitter saturation voltage *1VBE(sat) IC= -300 mA, IB= -30 mA -1.1 -1.5 V
Transition frequency fTVCB = -10 V, IE= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = -10 V, IE= 0, f = 1 MHz 6 15 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank Q R S No-rank
hFE1 85 to 170 120 to 240 170 to 340 85 to 340
Marking symbol DQ DR DS D
Product of no-rank is not classified and have no indication for rank.
Package
Code
Mini3-G1
Pin Name
1: Base
2: Emitter
3: Collector
Marking Symbol: D

2SB0710A
2SJC00413AED
This product complies with the RoHS Directive (EU 2002/95/EC).
040 80 120 160
0
80
160
240
2SB0710A_ PC-Ta
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
0−4−8−12
0
−200
−400
−600
−800
2SB0710A_ IC-VCE
Collector current IC(mA)
Collector-emitter voltage VCE (V)
Ta =25°C
IB=−10 mA
−9 mA
−8 mA
−7 mA
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
0−8−4
0
−200
−600
−800
−400
2SB0710A_ IC-IB
Collector current IC(mA)
Base current IB(mA)
VCE =−10 V
Ta =25°C
−1−10 −102−103
−10−2
−10−1
−10
−1
2SB0710A_ VCE(sat)-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
IC / IB =10
Ta =75°C
25°C
−25°C
−1−10 −102−103
−10−2
−10−1
−10
−1
2SB0710A_ VBE(sat)-IC
Base-emitter saturation voltage VBE(sat) (V)
Collector current IC(mA)
IC / IB =10
Ta =−25°C
25°C
75°C
−10 −102−103
0
100
200
300
400
2SB0710A_ hFE-IC
Forward current transfer ratio hFE
Collector current IC(mA)
VCE =−10 V
Ta =75°C
25°C
−25°C
110 102
0
80
160
240
2SB0710A_ fT-IE
Transition frequency fT(MHz)
Emitter current IE(mA)
VCE =−10 V
Ta =25°C
−1−10 −102
0
8
16
24
2SB0710A_ Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
Collector-base voltage VCB (V)
IE =0
f=1 MHz
Ta =25°C
110 103
102
0
−40
−80
−120
2SB0710A_ VCER-RBE
Collector-emitter voltage (Resistor between B and E) VCER (V)
Base-emitter resistance RBE (kΩ)
IC =−2 mA
Ta =25°C
PCTaICVCE ICIB
VCE(sat) ICVBE(sat) IChFE IC
fTIECob VCB VCER RBE

2SB0710A
SJC00413AED 3
This product complies with the RoHS Directive (EU 2002/95/EC).
Mini3-G1 Unit: mm
(0.95)
(0.95)
1.9 ±0.1
0.40
1.50
2.8
2.90
3
2
1
5°
0.4 ±0.2
0.16
10°
1.1
1.1
0 to 0.1 (0.65)
+0.10
−0.05
+0.25 −0.05
+0.2 −0.3
+0.20
−0.05
+0.2 −0.1
+0.3 −0.1
+0.10
−0.05

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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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defect which may arise later in your equipment.
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