Panasonic 2SC3312 User manual

Transistors
1
Publication date: March 2003 SJC00128BED
2SC3312
Silicon NPN epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SA1310
■Features
•Optimum for high-density mounting
•Allowing supply with the radial taping
•Low noise voltage NV
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 55 V
Emitter-base voltage (Collector open) VEBO 7V
Collector current IC100 mA
Peak collector current ICP 200 mA
Collector power dissipation PC300 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=060V
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=055V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=07V
Base-emitter voltage VBE VCE =1 V, IC=30 mA 1 V
Collector-base cutoff current (Emitter open) ICBO VCB =20 V, IE=0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE =20 V, IB=01µA
Forward current transfer ratio *hFE VCE =5 V, IC=2 mA 180 700 
Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10 mA 1 V
Transition frequency fTVCB =5 V, IE=−2 mA, f =200 MHz 200 MHz
Noise voltage NV VCE =10 V, IC=1 mA, GV=80 dB 150 mV
Rg=100 kΩ, Function =FLAT
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank R S T
hFE 180 to 360 260 to 520 360 to 700
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45+0.20
–0.10
7.6
3.0±0.2
(0.8)(0.8)
15.6±0.5
1: Emitter
2: Collector
3: Base
NS-B1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3312
2SJC00128BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB NV IC
0 16040 12080
0
500
400
300
200
100
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
012108264
0
240
200
160
120
80
40
Ta=25°C
50 µA
350 µA
200 µA
150 µA
100 µA
330 µA
250 µA
IB=400 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
120
100
80
60
40
20
VCE =5 V
Ta=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
1 000
800
600
400
200
VCE =5 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
400
300
100
200
V
CB
=5 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
1 10 100
0
5
4
3
2
1
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
0.01 0.1 1
0
240
200
160
120
80
40
V
CE
=10 V
G
V
=80 dB
Function =FLAT
T
a
=25°C
4.1 kΩ
R
g
=100 kΩ
22 kΩ
Noise voltage NV (mV)
Collector current IC(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

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