Panasonic 2SC3130 User manual

Transistors
1
Publication date: February 2003 SJC00125BED
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■Features
•High transition frequency fT
•Small collector output capacitance (Common base, input open cir-
cuited) Cob and reverse transfer capacitance (Common emitter) Crb
•Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine pack-
ing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 10 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=2 mA, IB=010V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=01µA
Forward current transfer ratio *1hFE VCE =4 V, IC=5 mA 75 220 
hFE ratio *2∆hFE hFE2: VCE =4 V, IC=100 µA 0.75 1.60 
hFE1: VCE =4 V, IC=5 mA
Collector-emitter saturation voltage VCE(sat) IC=20 mA, IB=4 mA 0.5 V
Transition frequency fTVCB =4 V, IE=−5 mA, f =200 MHz 1.4 1.9 2.5 GHz
Collector output capacitance Cob VCB =4 V, IE=0, f =1 MHz 1.4 pF
(Common base, input open circuited)
Reverse transfer capacitance Crb VCB =4 V, IE=0, f =1 MHz 0.45 pF
(Common emitter)
Collector-base parameter rbb' • CCVCB =4 V, IE=−5 mA, f =31.9 MHz 11 ps
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
0.40
+0.10
–0.05
(0.65) 1.50
+0.25 –0.05
2.8
+0.2 –0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5˚
10˚
0 to 0.1 1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Rank P Q
hFE 75 to 130 110 to 220
Marking Symbol: 1S
*2: ∆hFE =hFE2 /hFE1
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3130
2SJC00125BED
VCE(sat) IChFE ICfTIE
PCTaICVCE ICVBE
Cob VCB
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
012108264
0
80
60
20
40
T
a
=25°C
400 µA
300 µA
200 µA
100 µA
I
B
=500 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
VCE =4 V
Ta=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
0.1 1 10 100
0
360
300
240
180
120
60
V
CE
=4 V
T
a
=75°C
25°C
−25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−0.1 −1−10 −100
0
4
3
1
2
V
CB
=4 V
T
a
=25°C
Transition frequency f
T
(GHz)
Emitter current I
E
(mA)
1 10 100
0
1.6
1.2
0.4
0.8
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
This product complies with the RoHS Directive (EU 2002/95/EC).

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