Texas Instruments SimpleLink CC2640 User manual

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CC2640
SWRS176 –FEBRUARY 2015
CC2640 SimpleLink™ Bluetooth
®
Smart Wireless MCU
1 Device Overview
1.1 Features
1– Very Few External Components
• Microcontroller – Seamless Integration With the SimpleLink
– Powerful ARM®Cortex®-M3 CC2590 and CC2592 Range Extenders
– EEMBC CoreMark®score: 142 – Pin Compatible With the SimpleLink CC13xx in
– Up to 48-MHz Clock Speed 4-mm × 4-mm and 5-mm × 5-mm QFN
– 128KB of In-System Programmable Flash Packages
– 8-KB SRAM for Cache • Low Power
– 20-KB Ultra-Low Leakage SRAM – Wide Supply Voltage Range
– 2-Pin cJTAG and JTAG Debugging • Normal Operation: 1.8 to 3.8 V
– Supports Over-The-Air Upgrade (OTA) • External Regulator Mode: 1.7 to 1.95 V
• Ultra-Low Power Sensor Controller – Active-mode RX: 5.9 mA
– Can run autonomous from the rest of the – Active-mode TX at 0 dBm: 6.1 mA
system – Active-mode TX at +5 dBm: 9.1 mA
– 16-Bit Architecture – Active-mode MCU: 61 µA/MHz
– 2-KB Ultra-Low Leakage SRAM for Code and – Active-mode MCU: 48.5 CoreMark/mA
Data – Active-mode Sensor Controller: 8.2 µA/MHz
• Efficient Code Size Architecture, Placing Drivers, – Standby: 1 µA (RTC Running and RAM/CPU
Bluetooth®Low Energy Controller, and Bootloader Retention)
in ROM – Shutdown: 100 nA (Wake-up on External
• RoHS-Compliant Packages Events)
– 4-mm × 4-mm RSM QFN32 (10 GPIOs) • RF Section
– 5-mm × 5-mm RHB QFN32 (15 GPIOs) – 2.4 GHz RF Transceiver Compatible With
– 7-mm x 7-mm RGZ QFN48 (31 GPIOs) Bluetooth Low Energy (BLE) 4.1 specification
• Peripherals – Excellent Receiver Sensitivity (–97 dBm for
– All Digital Peripheral Pins can be Routed to any BLE), Selectivity, and Blocking Performance
GPIO – Programmable Output Power up to +5 dBm
– 4 General-Purpose Timer Modules (8 × 16-Bit or – Single-ended or Differential RF Interface
4 × 32-Bit Timer, PWM Each) – Suitable for Systems Targeting Compliance With
– 12-Bit ADC, 200-ksamples/s, 8-Channel Analog Worldwide Radio Frequency Regulations
MUX • ETSI EN 300 328 (Europe)
– Continuous Time Comparator • EN 300 440 Class 2 (Europe)
– Ultra-Low Power Analog Comparator • FCC CFR47 Part 15 (US)
– Programmable Current Source • ARIB STD-T66 (Japan)
– UART • Tools and Development Environment
– 2x SSI (SPI, µW, TI) – Full-Feature and Low-Cost Development Kits
– I2C– Multiple Reference Designs for Different RF
– I2S Configurations
– Real-Time Clock (RTC) – Packet Sniffer PC Software
– AES-128 Security Module – Sensor Controller Studio
– True Random Number Generator (TRNG) – SmartRF™ Studio
– 10, 15, or 31 GPIOs, Depending on Package – SmartRF Flash Programmer 2
Option – IAR Embedded Workbench®for ARM
– Support for 8 Capacitive Sensing Buttons – Code Composer Studio™
– Integrated Temperature Sensor
• External System
– On-Chip internal DC-DC Converter
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.

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SWRS176 –FEBRUARY 2015 www.ti.com
1.2 Applications
• Home and Building Automation • Health and Medical
– Connected Appliances – Thermometers
– Lighting – SpO2
– Locks – Blood Glucose and Pressure Meters
– Gateways – Weight-scales
– Security Systems – Vitals Monitoring
– Hearing Aids
• Industrial
– Logistics • Sports and Fitness
– Production and Manufacturing – Activity Monitors and Fitness Trackers
– Automation – Heart Rate Monitors
– Asset Tracking and Management – Running Sensors
– Remote Display – Biking Sensors
– Cable Replacement – Sports Watches
– HMI – Gym Equipment
– Access Control – Team Sports Equipment
• Retail • HID
– Beacons – Remote Controls
– Advertising – Keyboards and Mice
– ESL / Price Tags – Gaming
– Point of Sales / Payment Systems • Accessories
– Toys
– Trackers
– Luggage-tags
– Wearables
1.3 Description
The CC2640 is a wireless MCU targeting Bluetooth Smart applications.
The device is a member of the CC26xx family of cost-effective, ultra-low power, 2.4-GHz RF devices. Very
low active RF and MCU current, and low-power mode current consumption provides excellent battery
lifetime and allows operation on small coin cell batteries and in energy-harvesting applications.
The CC2640 contains a 32-bit ARM Cortex-M3 running at 48-MHz as the main processor and a rich
peripheral feature set, including a unique ultra-low power sensor controller, ideal for interfacing external
sensors and/or collecting analog and digital data autonomously while the rest of the system is in sleep
mode.
This makes the CC2640 ideal for a wide range of applications where long battery lifetime, small form
factor, and ease of use is important.
The Bluetooth Low Energy controller is embedded into ROM and run partly on an ARM Cortex®-M0
processor. This architecture improves overall system performance and power consumption and frees up
flash memory for the application.
The Bluetooth Smart stack is available free of charge from www.ti.com.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE
CC2640F128RGZ RGZ (QFN48) 7.00 mm × 7.00 mm
CC2640F128RHB RHB (QFN32) 5.00 mm × 5.00 mm
(1) For more information, see Section 9,Mechanical Packaging and Orderable Information.
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Device Information(1) (continued)
PART NUMBER PACKAGE BODY SIZE
CC2640F128RSM RSM (QFN32) 4.00 mm × 4.00 mm
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1.4 Functional Block Diagram
Section 1.4 shows a block diagram for the CC2640.
Figure 1-1. Block Diagram
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Table of Contents
1 Device Overview ......................................... 15.16 Battery Monitor...................................... 19
1.1 Features .............................................. 15.17 Continuous Time Comparator....................... 20
1.2 Applications........................................... 25.18 Low-Power Clocked Comparator ................... 20
1.3 Description............................................ 25.19 Programmable Current Source ..................... 20
1.4 Functional Block Diagram ............................ 45.20 DC Characteristics .................................. 21
2 Revision History ......................................... 65.21 Control Input AC Characteristics.................... 21
3 Device Comparison ..................................... 75.22 Synchronous Serial Interface (SSI) Characteristics.21
4 Terminal Configuration and Functions.............. 85.23 Typical Characteristics .............................. 22
4.1 Pin Diagram – RSM Package ........................ 86 Detailed Description ................................... 25
4.2 Signal Descriptions – RSM Package................. 86.1 Overview ............................................ 25
4.3 Pin Diagram – RHB Package ........................ 96.2 Main CPU ........................................... 25
4.4 Signal Descriptions – RHB Package................ 10 6.3 RF Core ............................................. 25
4.5 Pin Diagram – RGZ Package....................... 11 6.4 Sensor Controller ................................... 26
4.6 Signal Descriptions – RGZ Package................ 11 6.5 Memory.............................................. 27
5 Specifications........................................... 13 6.6 Debug ............................................... 27
5.1 Absolute Maximum Ratings......................... 13 6.7 Power Management................................. 28
5.2 ESD Ratings ........................................ 13 6.8 Clock Systems ...................................... 29
5.3 Recommended Operating Conditions............... 13 6.9 General Peripherals and Modules .................. 29
5.4 Thermal Characteristics............................. 14 6.10 System Architecture................................. 30
5.5 Electrical Characteristics............................ 15 7 Application Circuit ..................................... 31
5.6 General Characteristics ............................. 16 8 Device and Documentation Support ............... 33
5.7 1-Mbps GFSK (Bluetooth Low Energy) – RX....... 16 8.1 Device Support...................................... 33
5.8 1-Mbps GFSK (Bluetooth Low Energy) – TX ....... 17 8.2 Documentation Support ............................. 35
5.9 1-Mbps GFSK (Bluetooth Low Energy) – Common 8.3 Additional Information ............................... 35
RX/TX ............................................... 17 8.4 Trademarks.......................................... 36
5.10 24-MHz Crystal Oscillator (XOSC_HF) ............. 18 8.5 Electrostatic Discharge Caution..................... 36
5.11 32.768-kHz Crystal Oscillator (XOSC_LF).......... 18 8.6 Export Control Notice ............................... 36
5.12 48-MHz RC Oscillator (RCOSC_HF) ............... 18 8.7 Glossary............................................. 36
5.13 32-kHz RC Oscillator (RCOSC_LF)................. 18 9 Mechanical Packaging and Orderable
5.14 ADC Characteristics................................. 19 Information .............................................. 37
5.15 Temperature Sensor ................................ 19 9.1 Packaging Information .............................. 37
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2 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
DATE REVISION NOTES
February 2015 * Initial Release
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3 Device Comparison
Table 3-1. Device Family Overview
Device PHY Support Flash (KB) RAM (KB) GPIO Package(1)
CC2650F128xxx Multi-Protocol(2) 128 20 31, 15, 10 RGZ, RHB, RSM
CC2640F128xxx Bluetooth low energy 128 20 31, 15, 10 RGZ, RHB, RSM
CC2630F128xxx IEEE 802.15.4 ( ZigBee®/6LoWPAN) 128 20 31, 15, 10 RGZ, RHB, RSM
CC2620F128xxx IEEE 802.15.4 (RF4CE) 128 20 31, 15, 10 RGZ, RHB, RSM
(1) Package designator replaces the xxx in device name to form a complete device name, RGZ is 7-mm x 7-mm QFN48, RHB is 5-mm x 5-
mm QFN32, and RSM is 4-mm x 4-mm QFN32.
(2) The CC2650 supports all PHYs and can be reflashed to run all the supported standards.
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CC26xx
28
29
27
30 QFN32 4x4
RSM
21 20 22 19 18
13
12
14
11
4 5 3 6 7
26 15
25 16
31 10
32 9
232 241 178
DIO_6 VSS DIO_5 RESET_N VSS VDDS_DCDC DCDC_SW DIO_7
VDDR_RF
X24M_N
X24M_P
VSS
VDDR
DIO_9
VDDS
DIO_8
DIO_1
JTAG_TMSC
DIO_2
DCOUPL
VDDS2
JTAG_TCKC
DIO_3
DIO_4
RF_P
RF_N
VSS
X32K_Q2
VSS
DIO_0
RX_TX
X32K_Q1
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4 Terminal Configuration and Functions
NOTE
I/O pins marked in bold have high drive capabilities. I/O pins marked in italics have analog
capabilities.
4.1 Pin Diagram – RSM Package
Figure 4-1. RSM (4 mm × 4 mm) Pinout, 0.4-mm Pitch
4.2 Signal Descriptions – RSM Package
Table 4-1. Signal Descriptions – RSM Package
Pin Name Pin Pin Type Description
RF_P 1 RF I/O Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N 2 RF I/O Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RX_TX 4 RF I/O Optional bias pin for the RF LNA
VDDS 27 Power 1.8 V to 3.8 V main chip supply(1)
VDDS2 11 Power 1.8 V to 3.8 V GPIO supply(1)
VDDS_DCDC 19 Power 1.8 V to 3.8 V DC/DC supply. Tie to ground for external
regulator mode (1.7 V to 1.95 V operation)
VDDR 28 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(2)(3)
VDDR_RF 32 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(4)(3)
DCOUPL 12 Power 1.27 V regulated digital-supply decoupling capacitor(3)
VSS 3, 7, 17, 20, 29 Power Ground
(1) See Section 8.2, technical reference manual for more details.
(2) If internal DC/DC is not used, this pin is supplied internally from the main LDO.
(3) Do not supply external circuitry from this pin.
(4) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
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CC26xx
28
29
27
30 QFN32 5x5
RHB
21 20 22 19 18
13
12
14
11
4 5 3 6 7
26 15
25 16
31 10
32 9
232 241 178
DIO_10 DIO_7 DIO_9 DIO_8 DCDC_SW RESET_N VDDS_DCDC DIO_11
VDDR_RF
X24M_N
X24M_P
VDDR
VDDS
DIO_13
DIO_14
DIO_12
DIO_3
JTAG_TMSC
DIO_4
DCOUPL
VDDS2
JTAG_TCKC
DIO_5
DIO_6
RF_P
RF_N
RX_TX
DIO_0 DIO_1 DIO_2
X32K_Q1 X32K_Q2
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Table 4-1. Signal Descriptions – RSM Package (continued)
Pin Name Pin Pin Type Description
DCDC_SW 18 Power Output from internal DC/DC(1). Tie to ground for external
regulator mode (1.7 V to 1.95 V operation)
EGP Power Ground – Exposed Ground Pad
RESET_N 21 Digital input Reset, active-low. No internal pullup
DIO_0 8 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_1 9 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_2 10 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_3 15 Digital I/O GPIO, High drive capability, JTAG_TDO
DIO_4 16 Digital I/O GPIO, High drive capability, JTAG_TDI
DIO_5 22 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_6 23 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_7 24 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_8 25 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_9 26 Digital/Analog I/O GPIO, Sensor Controller, Analog
JTAG_TMSC 13 Digital I/O JTAG TMSC
JTAG_TCKC 14 Digital I/O JTAG TCKC
X32K_Q1 5 Analog I/O 32 kHz crystal oscillator pin 1
X32K_Q2 6 Analog I/O 32 kHz crystal oscillator pin 2
X24M_N 30 Analog I/O 24 MHz crystal oscillator pin 1
X24M_P 31 Analog I/O 24 MHz crystal oscillator pin 2
4.3 Pin Diagram – RHB Package
Figure 4-2. RHB (5 mm × 5 mm) Pinout, 0.5-mm Pitch
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4.4 Signal Descriptions – RHB Package
Table 4-2. Signal Descriptions – RHB Package
Pin Name Pin Pin Type Description
RF_P 1 RF I/O Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N 2 RF I/O Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
RX_TX 3 RF I/O Optional bias pin for the RF LNA
VDDS 28 Power 1.8 V to 3.8 V main chip supply(1)
VDDS2 11 Power 1.8 V to 3.8 V GPIO supply(1)
VDDS_DCDC 18 Power 1.8 V to 3.8 V DC/DC supply
VDDR 29 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(2)(3)
VDDR_RF 32 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(4)(3)
DCOUPL 12 Power 1.27 V regulated digital-supply decoupling(3)
DCDC_SW 17 Power Output from internal DC/DC(1)
EGP Power Ground – Exposed Ground Pad
RESET_N 19 Digital input Reset, active-low. No internal pullup
DIO_0 6 Digital I/O GPIO, Sensor Controller
DIO_1 7 Digital I/O GPIO, Sensor Controller
DIO_2 8 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_3 9 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_4 10 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_5 15 Digital I/O GPIO, High drive capability, JTAG_TDO
DIO_6 16 Digital I/O GPIO, High drive capability, JTAG_TDI
DIO_7 20 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_8 21 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_9 22 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_10 23 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_11 24 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_12 25 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_13 26 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_14 27 Digital/Analog I/O GPIO, Sensor Controller, Analog
JTAG_TMSC 13 Digital I/O JTAG TMSC, High drive capability
JTAG_TCKC 14 Digital I/O JTAG TCKC
X32K_Q1 4 Analog I/O 32 kHz crystal oscillator pin 1
X32K_Q2 5 Analog I/O 32 kHz crystal oscillator pin 2
X24M_N 30 Analog I/O 24 MHz crystal oscillator pin 1
X24M_P 31 Analog I/O 24 MHz crystal oscillator pin 2
(1) See Section 8.2, technical reference manual for more details.
(2) If internal DC/DC is not used, this pin is supplied internally from the main LDO.
(3) Do not supply external circuitry from this pin.
(4) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
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40
39
DIO_25 38
DIO_24 37
21
22
23
24
DCDC_SW33 DIO_18
34 RESET_N35 DIO_2336
X32K_Q2 4 X32K_Q1 3
RF_N 2
RF_P 1
DIO_2232 DIO_2131 DIO_2030 DIO_1929
DIO_0 5 DIO_1 6 DIO_2 7
828
27 26 JTAG_TCKC25
9
10 11 12
CC26xx
QFN48 7x7
RGZ
41
42
43
44
20 DIO_15
19 DIO_14
18
17
VDDR 45
46
47
VDDR_RF 48
16
15
14
13
DIO_17 DIO_16 VDDS_DCDC
DIO_26
DIO_12
DIO_13
VDDS2
DIO_11
DIO_10
DIO_5 DIO_6 DIO_7 DIO_3 DIO_4
X24M_P
X24M_N DIO_8 DIO_9
DIO_28
VDDS3
DCOUPL
JTAG_TMSC
DIO_29
DIO_30
DIO_27
VDDS
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4.5 Pin Diagram – RGZ Package
Figure 4-3. RGZ (7 mm × 7 mm) Pinout, 0.5-mm Pitch
4.6 Signal Descriptions – RGZ Package
Table 4-3. Signal Descriptions – RGZ Package
Pin Name Pin Pin Type Description
RF_P 1 RF I/O Positive RF input signal to LNA during RX
Positive RF output signal to PA during TX
RF_N 2 RF I/O Negative RF input signal to LNA during RX
Negative RF output signal to PA during TX
VDDS 44 Power 1.8 V to 3.8 V main chip supply(1)
VDDS2 13 Power 1.8 V to 3.8 V DIO supply(1)
VDDS3 22 Power 1.8 V to 3.8 V DIO supply(1)
VDDS_DCDC 34 Power 1.8 V to 3.8 V DC/DC supply
VDDR 45 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(2)(3)
VDDR_RF 48 Power 1.7 V to 1.95 V supply, typically connect to output of internal
DC/DC(4)(3)
DCOUPL 23 Power 1.27 V regulated digital-supply decoupling capacitor(3)
EGP Power Ground – Exposed Ground Pad
DCDC_SW 33 Power Output from internal DC/DC(1)
RESET_N 35 Digital input Reset, active-low. No internal pullup
DIO_0 5 Digital I/O GPIO, Sensor Controller
(1) See Section 8.2, technical reference manual for more details.
(2) If internal DC/DC is not used, this pin is supplied internally from the main LDO.
(3) Do not supply external circuitry from this pin.
(4) If internal DC/DC is not used, this pin must be connected to VDDR for supply from the main LDO.
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Table 4-3. Signal Descriptions – RGZ Package (continued)
Pin Name Pin Pin Type Description
DIO_1 6 Digital I/O GPIO, Sensor Controller
DIO_2 7 Digital I/O GPIO, Sensor Controller
DIO_3 8 Digital I/O GPIO, Sensor Controller
DIO_4 9 Digital I/O GPIO, Sensor Controller
DIO_5 10 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_6 11 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_7 12 Digital I/O GPIO, Sensor Controller, High drive capability
DIO_8 14 Digital I/O GPIO
DIO_9 15 Digital I/O GPIO
DIO_10 16 Digital I/O GPIO
DIO_11 17 Digital I/O GPIO
DIO_12 18 Digital I/O GPIO
DIO_13 19 Digital I/O GPIO
DIO_14 20 Digital I/O GPIO
DIO_15 21 Digital I/O GPIO
DIO_16 26 Digital I/O GPIO, JTAG_TDO, High drive capability
DIO_17 27 Digital I/O GPIO, JTAG_TDI, High drive capability
DIO_18 28 Digital I/O GPIO
DIO_19 29 Digital I/O GPIO
DIO_20 30 Digital I/O GPIO
DIO_21 31 Digital I/O GPIO
DIO_22 32 Digital I/O GPIO
DIO_23 36 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_24 37 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_25 38 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_26 39 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_27 40 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_28 41 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_29 42 Digital/Analog I/O GPIO, Sensor Controller, Analog
DIO_30 43 Digital/Analog I/O GPIO, Sensor Controller, Analog
JTAG_TMSC 24 Digital I/O JTAG TMSC, High drive capability
JTAG_TCKC 25 Digital I/O JTAG TCKC
X32K_Q1 3 Analog I/O 32 kHz crystal oscillator pin 1
X32K_Q2 4 Analog I/O 32 kHz crystal oscillator pin 2
X24M_N 46 Analog I/O 24 MHz crystal oscillator pin 1
X24M_P 47 Analog I/O 24 MHz crystal oscillator pin 2
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5 Specifications
5.1 Absolute Maximum Ratings(1)(2)
[over operating free-air temperature range (unless otherwise noted)] Under no circumstances must the absolute maximum
ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device.
MIN MAX UNIT
VDDR supplied by internal DC/DC regulator or
Supply voltage, VDDS(3) –0.3 4.1 V
internal GLDO
External regulator mode (VDDS and VDDR pins
Supply voltage, VDDS(3) and VDDR –0.3 2.25 V
connected on PCB) VDDS+0.3, max
Voltage on any digital pin(4) –0.3 V
4.1
Voltage on crystal oscillator pins, VDDR+0.3, max
X32K_Q1, X32K_Q2, X24M_N and –0.3 V
2.25
X24M_P Internal fixed or relative reference, voltage –0.3 VDDS
scaling enabled
Internal fixed reference, voltage scaling disabled –0.3 1.49
Internal relative reference, voltage scaling
Voltage on ADC input (Vin) –0.3 VDDS / 2.9 V
disabled min (Vref × 2.9,
External reference, voltage scaling enabled –0.3 VDDS)
External reference, voltage scaling disabled –0.3 Vref
Voltage on external ADC reference –0.3 1.6 V
(Vref)
Input RF level +5 dBm
Tstg Storage temperature –40 150 °C
(1) All voltage values are with respect to VDDS, unless otherwise noted.
(2) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(3) VDDS2 and VDDS3 needs to be at the same potential as VDDS.
(4) Including analog capable DIO.
5.2 ESD Ratings
VALUE UNIT
Human Body Model (HBM), per ANSI/ESDA/JEDEC All pins ±2500
JS001(1)
Electrostatic discharge
VESD V
(ESD) performance: RF pins ±750
Charged Device Model (CDM), per JESD22-C101(2) non-RF pins ±750
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
The operating conditions for CC2640 are listed below. MIN MAX UNIT
Ambient temperature range –40 85 °C
Operating supply voltage For operation in 1.8 V systems
(VDDS and VDDR), external (VDDS and VDDR pins connected on PCB, internal DC/DC 1.7 1.95 V
regulator mode cannot be used)
Operating supply voltage For operation in battery-powered and 3.3 V systems 1.8 3.8 V
(VDDS) (internal DC/DC can be used to minimize power consumption)
Rising supply voltage slew rate 0 100 mV/us
Falling supply voltage slew rate 0 20 mV/us
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Recommended Operating Conditions (continued)
The operating conditions for CC2640 are listed below. MIN MAX UNIT
Falling supply voltage slew rate, 3 mV/us
with low-power flash settings(1)
Positive temperature gradient in No limitation for negative temperature gradient, or outside 5 °C/s
standby(2) standby mode
(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a 22uF VDDS input capacitor (see Figure 7-
1) should be used to ensure compliance with this slew rate.
(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by a change in temperature. See
Section 5.13
5.4 Thermal Characteristics
NAME DESCRIPTION RSM (°C/W)(1) RHB (°C/W)(1) RGZ (°C/W)(1)
ΘJA Junction-to-ambient thermal resistance 36.9 32.8 29.6
ΘJCtop Junction-to-case (top) thermal resistance 30.3 24.0 15.7
ΘJB Junction-to-board thermal resistance 7.6 6.8 6.2
ΨJT Junction-to-top characterization parameter 0.4 0.3 0.3
ΨJB Junction-to-board characterization parameter 7.4 6.8 6.2
ΘJCbot Junction-to-case (bottom) thermal resistance 2.1 1.9 1.9
(1) °C/W = degrees Celsius per watt.
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5.5 Electrical Characteristics
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V with internal DC-DC
converter, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Icore Core current consumption Reset. RESET_N pin asserted 100 nA
Shutdown. No clocks running, no retention 150
Standby. With RTC, CPU, RAM and (partial) register 1
retention. RCOSC_LF
Standby. With RTC, CPU, RAM and (partial) register 1.2
retention. XOSC_LF
Standby. With Cache, RTC, CPU, RAM and (partial) µA
2.5
register retention. RCOSC_LF
Standby. With Cache, RTC, CPU, RAM and (partial) 2.7
register retention. XOSC_LF
Idle. Supply Systems and RAM powered. 550
1.45 mA
+
Active. Core running CoreMark 31
µA/MHz
Radio RX (1) 5.9
Radio RX(2) 6.1 mA
Radio TX, 0 dBm output power(1) 6.1
Radio TX, 5 dBm output power(2) 9.1
Iperi Peripheral Current Consumption (Adds to core current Icore for each peripheral unit activated)(3)
Peripheral power domain Delta current with domain enabled 20 µA
Serial power domain Delta current with domain enabled 13 µA
Delta current with power domain enabled, clock
RF Core 237 µA
enabled, RF Core Idle
µDMA Delta current with clock enabled, module idle 130 µA
Timers Delta current with clock enabled, module idle 113 µA
I2C Delta current with clock enabled, module idle 12 µA
I2S Delta current with clock enabled, module idle 36 µA
SSI Delta current with clock enabled, module idle 93 µA
UART Delta current with clock enabled, module idle 164 µA
(1) Single-ended RF mode optimized for size and power consumption. Measured on CC2650EM-4XS
(2) Differential RF mode optimized for RF performance. Measured on CC2650EM-5XD
(3) Iperi not supported in Standby and Shutdown
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5.6 General Characteristics
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Wake-up and Timing
Idle -> Active 14 µs
Standby -> Active 151 µs
Shutdown -> Active 1015 µs
Flash Memory
Supported flash erase cycles before 100 k Cycles
failure
Flash page/sector erase current Average delta current 12.6 mA
Flash page/sector erase time(1) 8 ms
Flash page/sector size 4 KB
Flash write current Average delta current, 4 bytes at a time 8.15 mA
Flash write time(1) 4 bytes at a time 8 µs
(1) This number is dependent on Flash aging and will increase over time and erase cycles
5.7 1-Mbps GFSK (Bluetooth Low Energy) – RX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Differential mode. Measured at the CC2650EM-5XD SMA
Receiver sensitivity –97 dBm
connector, BER = 10-3
Single-ended mode. Measured on CC2650EM-4XS, at the SMA
Receiver sensitivity –96 dBm
connector, BER = 10-3
Differential mode. Measured at the CC2650EM-5XD SMA
Receiver saturation 4 dBm
connector, BER = 10-3
Single-ended mode. Measured on CC2650EM-4XS, at the SMA
Receiver saturation 0 dBm
connector, BER = 10-3
Wanted signal at -67 dBm, modulated interferer in channel,
Co-channel rejection(1) -6 dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at ±1 MHz,
Selectivity, ±1 MHz(1) 7 / 3(2) dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at ±2 MHz,
Selectivity, ±2 MHz(1) 34 / 25(2) dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at ±3 MHz,
Selectivity, ±3 MHz(1) 38 / 26(2) dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at ±4 MHz,
Selectivity, ±4 MHz(1) 42 / 29(2) dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at ≥±5 MHz,
Selectivity, ±5 MHz or more(1) 32 dB
BER = 10-3
Wanted signal at -67 dBm, modulated interferer at image
Selectivity, Image frequency(1) 25 dB
frequency, BER = 10-3
Selectivity, Image frequency ±1 Wanted signal at -67 dBm, modulated interferer at ±1 MHz from 3 / 26(2) dB
MHz(1) image frequency, BER = 10-3
Out-of-band blocking(3) 30 MHz to 2000 MHz –20 dBm
Out-of-band blocking 2003 MHz to 2399 MHz –5 dBm
Out-of-band blocking 2484 MHz to 2997 MHz –8 dBm
Out-of-band blocking 3000 MHz to 12.75 GHz –8 dBm
Wanted signal at 2402 MHz, -64 dBm. Two interferers at 2405
Intermodulation -34 dBm
and 2408 MHz respectively, at the given power level
(1) Numbers given as I/C dB
(2) X / Y, where X is +N MHz and Y is -N MHz
(3) Excluding one exception at Fwanted / 2, per Bluetooth Specification
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1-Mbps GFSK (Bluetooth Low Energy) – RX (continued)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Conducted measurement in a 50 Ωsingle-ended load. Suitable
Spurious emissions, 30 to 1000 for systems targeting compliance with EN 300 328, EN 300 440 –71 dBm
MHz class 2, FCC CFR47, Part 15 and ARIB STD-T-66
Conducted measurement in a 50 Ωsingle-ended load. Suitable
Spurious emissions, 1 to 12.75 for systems targeting compliance with EN 300 328, EN 300 440 –62 dBm
GHz class 2, FCC CFR47, Part 15 and ARIB STD-T-66
RSSI dynamic range 70 dB
RSSI accuracy ±4 dB
5.8 1-Mbps GFSK (Bluetooth Low Energy) – TX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, fRF = 2440 MHz, unless
otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Differential mode, delivered to a single-ended 50-Ωload
Output power, highest setting +5 dBm
through a balun
Measured on CC2650EM-4XS, delivered to a single-ended
Output power, highest setting +2 dBm
50-Ωload
Output power, lowest setting Delivered to a single-ended 50-Ωload through a balun –21 dBm
f < 1 GHz, outside restricted bands –43 dBm
f < 1 GHz, restricted bands ETSI –65 dBm
Spurious emission conducted f < 1 GHz, restricted bands FCC –76 dBm
measurement f > 1 GHz, including harmonics –46 dBm
Suitable for systems targeting compliance with worldwide radio-frequency regulations ETSI EN 300 328
and EN 300 440 Class 2 (Europe), FCC CFR47 Part 15 (US), and ARIB STD-T66 (Japan)
5.9 1-Mbps GFSK (Bluetooth Low Energy) – Common RX/TX
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Difference between center frequency of the
Frequency error tolerance -350 +350 kHz
received RF signal and local oscillator frequency.
Data rate error tolerance -750 +750 ppm
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5.10 24-MHz Crystal Oscillator (XOSC_HF)(1)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 24 MHz
Crystal frequency tolerance(2) -40 40 ppm
ESR Equivalent series resistance 20 60 Ω
CL Crystal load capacitance 5 9 pF
Start-up time(3) 150 µs
(1) Probing or otherwise stopping the XTAL while the DC-DC converter is enabled may cause permanent damage to the device.
(2) Includes initial tolerance of the crystal, drift over temperature, aging and frequency pulling due to incorrect load capacitance. As per
Bluetooth specification
(3) Kick-started based on a temperature and aging compensated RCOSC_HF using precharge injection
5.11 32.768-kHz Crystal Oscillator (XOSC_LF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Crystal frequency 32.768 kHz
Crystal frequency tolerance, Bluetooth low -250 250 ppm
energy applications
ESR Equivalent series resistance 30 100 kΩ
CL Crystal load capacitance 6 12 pF
5.12 48-MHz RC Oscillator (RCOSC_HF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Frequency 48 MHz
Uncalibrated frequency accuracy ±1%
Calibrated frequency accuracy(1) ±0.25%
Start-up time 5 µs
(1) Accuracy relatively to the calibration source (XOSC_HF).
5.13 32-kHz RC Oscillator (RCOSC_LF)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Calibrated frequency 32.8 kHz
Temperature coefficient 50 ppm/°C
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5.14 ADC Characteristics(1)
Tc=25°C, VDDS = 3.0 V and voltage scaling enabled, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
Resolution 12 Bits
Sample rate 200 ksps
Offset Internal 4.3 V equivalent reference(2) 2 LSB
Gain error Internal 4.3 V equivalent reference(2) 2.4 LSB
DNL(3) Differential nonlinearity >–1 LSB
INL(4) Integral nonlinearity ±3 LSB
Internal 4.3 V equivalent reference(2), 200 ksps, 9.6 kHz input tone 9.8
VDDS as reference, 200 ksps, 9.6 kHz input tone 10
ENOB Effective number of bits Bits
Internal 1.44 V reference, voltage scaling disabled, 32 samples 11.1
average, 200 ksps, 300 Hz input tone
Internal 4.3 V equivalent reference(2), 200 ksps, 9.6 kHz input tone –65
VDDS as reference, 200 ksps, 9.6 kHz input tone –69
THD Total harmonic distortion dB
Internal 1.44 V reference, voltage scaling disabled, 32 samples –71
average, 200 ksps, 300 Hz input tone
Internal 4.3 V equivalent reference(2), 200 ksps, 9.6 kHz input tone 60
SINA Signal-to-noise and VDDS as reference, 200 ksps, 9.6 kHz input tone 63
D / dB
distortion ratio Internal 1.44 V reference, voltage scaling disabled, 32 samples 69
SNDR average, 200 ksps, 300 Hz input tone
Internal 4.3 V equivalent reference(2), 200 ksps, 9.6 kHz input tone 67
Spurious-free dynamic VDDS as reference, 200 ksps, 9.6 kHz input tone 72
SFDR dB
range Internal 1.44 V reference, voltage scaling disabled, 32 samples 73
average, 200 ksps, 300 Hz input tone
Serial conversion, time-to-output, 24 MHz clock 50 clock-
Conversion time cycles
Current consumption Internal 4.3 V equivalent reference(2) 0.66 mA
Current consumption VDDS as reference 0.75 mA
Internal reference voltage Internal 4.3 V equivalent reference(2) 1.44 V
Internal reference voltage VDDS as reference VDDS / V
2.82
(1) Using IEEE Std 1241™-2010 for terminology and test methods.
(2) Input signal scaled down internally before conversion, as if voltage range was 0 to 4.3V
(3) No missing codes. Positive DNL typically varies from +0.3 to +3.5 depending on device, see Figure 5-13
(4) For a typical example, see Figure 5-14
5.15 Temperature Sensor
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 4 °C
Range –40 85 °C
Accuracy ±5 °C
Supply voltage coefficient(1) 3.2 °C/V
(1) Automatically compensated when using supplied driver libraries.
5.16 Battery Monitor
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Resolution 50 mV
Range 1.8 3.8 V
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Battery Monitor (continued)
Measured on Texas Instruments CC2650EM-5XD reference design with Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Accuracy 13 mV
5.17 Continuous Time Comparator
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
External reference voltage 0 VDDS V
Internal reference voltage DCOUPL as reference 1.27 V
Offset 3 mV
Hysteresis <2 mV
Decision time Step from -10mV to +10mV 0.72 µs
Current consumption when enabled(1) 8.6 µA
(1) Additionally the bias module needs to be enabled when running in standby mode.
5.18 Low-Power Clocked Comparator
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range 0 VDDS V
Clock frequency 32 kHz
Internal reference voltage, VDDS / 2 1.49 - 1.51 V
Internal reference voltage, VDDS / 3 1.01 - 1.03 V
Internal reference voltage, VDDS / 4 0.78 - 0.79 V
Internal reference voltage, DCOUPL / 1 1.25 - 1.28 V
Internal reference voltage, DCOUPL / 2 0.63 - 0.65 V
Internal reference voltage, DCOUPL / 3 0.42 - 0.44 V
Internal reference voltage, DCOUPL / 4 0.33 - 0.34 V
Offset <2 mV
Hysteresis <5 mV
Decision time Step from -50mV to +50mV <1 clock-cycle
Current consumption when enabled 362 nA
5.19 Programmable Current Source
Tc=25°C, VDDS = 3.0 V, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Current source programmable output range 0.25 - µA
20
Resolution 0.25 µA
Including current source at maximum
Current consumption(1) 23 µA
programmable output
(1) Additionally the bias module needs to be enabled when running in standby mode.
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