Texas Instruments UCC217 QDWEVM-054 Series User manual

EVM User's Guide: UCC217XXQDWEVM-054
UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for
Wolfspeed 1200-V SiC Platforms
ABSTRACT
The UCC217XXQDWEVM-054 is a compact, half-bridge gate driver board consisting of two single-channel
isolated gate drivers. It provides isolated bias supply, drive current, protection and monitoring needed for driving
several different models of Wolfspeed silicon-carbide (SiC) MOSFET modules and other IGBT or SiC MOSFET
modules with a similar pinout. The on-board DC-DC transformers can provide adjustable isolated voltage.
The board's compact form factor, combined with UCC217xx's 5.7kVrms reinforced isolation, makes it a good
candidate for doing high voltage tests, such as double-pulse tests and short-circuit tests, with the Wolfspeed
SiC modules. The board can also be used with all variants of the UCC217xx and ISO5x5x family with minimal
on-board modifications.
This user's guide describes the characteristics, operation and use of the UCC217XX-054 Evaluation Module
(EVM). It also includes instructions to adjust different gate driver parameters, such as voltage supply and drive
strength, as well as instructions to modify the EVM to be compatible with different UCC217xx and ISO5x5x
variants. A complete schematic diagram, printed circuit board layouts, and bill of materials are included in this
document.
Table of Contents
1 General TI High Voltage Evaluation User Safety Guidelines.............................................................................................. 2
2 Module and Gate Driver Compatibility..................................................................................................................................4
2.1 Supported Wolfspeed Modules and Evaluation Platforms................................................................................................. 4
2.2 Supported Gate Drivers..................................................................................................................................................... 4
3 System Overview and Functions.......................................................................................................................................... 6
3.1 Features............................................................................................................................................................................. 6
3.2 Specifications..................................................................................................................................................................... 6
3.3 PCB Pinout.........................................................................................................................................................................7
3.4 Block Diagram....................................................................................................................................................................7
4 Using the EVM.......................................................................................................................................................................13
4.1 Equipment List................................................................................................................................................................. 13
4.2 Test Setups and Procedures............................................................................................................................................ 13
5 EVM Example Measurements.............................................................................................................................................. 16
5.1 Short-Circuit Testing.........................................................................................................................................................16
5.2 Analog Sensing................................................................................................................................................................ 17
6 EVM Tuning........................................................................................................................................................................... 19
6.1 Adjust Power Supplies..................................................................................................................................................... 19
6.2 Adjust Drive Strength....................................................................................................................................................... 20
6.3 Adaptations for Other ISO5x5x / UCC217xx Variants......................................................................................................20
7 Hardware Design Files......................................................................................................................................................... 22
7.1 Schematics.......................................................................................................................................................................22
7.2 PCB Layouts.................................................................................................................................................................... 24
7.3 Bill of Materials (BOM)..................................................................................................................................................... 27
8 Additional Information..........................................................................................................................................................33
8.1 Trademarks...................................................................................................................................................................... 33
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1 General TI High Voltage Evaluation User Safety Guidelines
WARNING
Always follow TI’s set-up and application instructions, including use of all interface components within their
recommended electrical rated voltage and power limits. Always use electrical safety precautions to help ensure
your personal safety and the safety of those working around you. Contact TI’s Product Information Center http://
support/ti./com for further information.
Save all warnings and instructions for future reference.
Failure to follow warnings and instructions may result in personal injury, property damage, or death due
to electrical shock and/or burn hazards.
The term TI HV EVM refers to an electronic device typically provided as an open framed, unenclosed printed
circuit board assembly. It is intended strictly for use in development laboratory environments, solely for qualified
professional users having training, expertise, and knowledge of electrical safety risks in development and
application of high-voltage electrical circuits. Any other use and/or application are strictly prohibited by Texas
Instruments. If you are not suitably qualified, you must immediately stop from further use of the HV EVM.
•Work Area Safety:
– Maintain a clean and orderly work area .
– Qualified observer(s) must be present anytime circuits are energized.
– Effective barriers and signage must be present in the area where the TI HV EVM and its interface
electronics are energized, indicating operation of accessible high voltages may be present, for the
purpose of protecting inadvertent access.
– All interface circuits, power supplies, evaluation modules, instruments, meters, scopes and other related
apparatus used in a development environment exceeding 50 VRMS/75 VDC must be electrically located
within a protected Emergency Power Off (EPO) protected power strip.
– Use a stable and non-conductive work surface.
– Use adequately insulated clamps and wires to attach measurement probes and instruments. No freehand
testing whenever possible.
•Electrical Safety:
As a precautionary measure, it is always a good engineering practice to assume that the entire EVM may
have fully accessible and active high voltages.
– De-energize the TI HV EVM and all its inputs, outputs, and electrical loads before performing any
electrical or other diagnostic measurements. Confirm that TI HV EVM power has been safely de-
energized.
– With the EVM confirmed de-energized, proceed with required electrical circuit configurations, wiring,
measurement equipment hook-ups and other application needs, while still assuming the EVM circuit and
measuring instruments are electrically live.
– When EVM readiness is complete, energize the EVM as intended.
WARNING
WARNING: While the EVM is energized, never touch the EVM or its electrical circuits as
they could be at high voltages capable of causing electrical shock hazard.
•Personal Safety:
– Wear personal protective equipment, for example, latex gloves and/or safety glasses with side shields or
protect EVM in an adequate lucent plastic box with interlocks from accidental touch.
•Limitation for Safe Use:
– EVMs are not to be used as all or part of a production unit.
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The EVM is designed for professionals who have received the appropriate technical training, and is designed
to operate from an AC power supply or a high-voltage DC supply. Please read this user guide and the safety-
related documents that come with the EVM package before operating this EVM.
CAUTION
!
Do not leave the EVM powered when unattended.
WARNING
High Voltage! Electric shock is possible when connecting board to live wire. Board must be handled
with care by a professional.
For safety, use of isolated test equipment with overvoltage and overcurrent protection is highly
recommended.
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2 Module and Gate Driver Compatibility
2.1 Supported Wolfspeed Modules and Evaluation Platforms
Below is a list of Wolfspeed evaluation platforms and SiC modules supported by the half-bridge gate driver
board.
Table 2-1. Wolfspeed Evaluation Platforms and SiC Modules Supported
Wolfspeed Design Wolfspeed Parts Supported Description
SpeedVal Kit 650-1200V Discrete MOSFETs, FM
Half-Bridge Modules
Dynamic Characterization and Power
Testing Platform
KIT-CRD-CIL12N-XM3 1200V XM Power Modules Dynamic Characterization Platform
KIT-CRD-CIL12N-GMA 1200V GM Half-Bridge Modules Dynamic Characterization Platform
KIT-CRD-CIL12N-FMA 1200V Half-Bridge FM Power Modules Dynamic Characterization Platform
KIT-CRD-CIL12N-FMB 1200V FM Full-Bridge Modules Dynamic Characterization Platform
KIT-CRD-CIL12N-FMC 1200V 6-Pack FM Power Modules Dynamic Characterization Platform
Other SiC MOSFET modules and IGBT modules with similar pinouts are directly supported as well.
2.2 Supported Gate Drivers
For details on how to modify the board to fit different gate driver variants, see Section 6.3.
Table 2-2. Supported Gate Drivers
Gate Driver Support EVM Part
Number
Miller
Clamp
Peak
Current
Rating
SC
Protection External Buffer
Modifications to
Install on
UCC21710 EVM
Modifications to
Install on
UCC21750 EVM
UCC21710
UCC21710-Q1
Available as
EVM
UCC21710Q
DWEVM-054 Internal 10A OC (0.7V) Not populated by default None
• Short-circuit
detection
UCC21750
UCC21750-Q1
Available as
EVM
UCC21750Q
DWEVM-054 Internal 10A DESAT (9V) Not populated by default
• Short-circuit
detection None
UCC21717-Q1
Direct Drop-
in to
UCC21710
EVM
N/A Internal 10A DESAT (9V) Optional use None
• Short-circuit
detection
UCC21759-Q1
Direct Drop-
in to
UCC21750
EVM
N/A Internal 10A DESAT (9V) Optional Use
• Short-circuit
detection None
UCC21755-Q1
UCC21756-Q1 Supported N/A Internal 10A DESAT (5V)
Optional Use
• Short-circuit
detection
• Short-circuit
detection
(adjust
threshold)
UCC21732
UCC21732-Q1
UCC21739-Q1
Supported N/A External 10A OC (0.7V) Optional use • Miller clamp
• Short-circuit
detection
• Miller clamp
UCC21737-Q1 Supported N/A External 10A OC (0.7V) Optional Use
• Miller clamp
• AIN/ASC
circuit
• Short-circuit
detection
• Miller clamp
• AIN/ASC
circuit
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Table 2-2. Supported Gate Drivers (continued)
Gate Driver Support EVM Part
Number
Miller
Clamp
Peak
Current
Rating
SC
Protection External Buffer
Modifications to
Install on
UCC21710 EVM
Modifications to
Install on
UCC21750 EVM
ISO5452
ISO5452-Q1
ISO5852S
ISO5852S-Q1
ISO5852S-EP
Supported N/A Internal +2.5/-5A DESAT (9V) Recommended
use
• Short-circuit
detection
• External
buffer
(optional)
• Bypass AIN/
APWM
• External
buffer
(optional)
• Bypass AIN/
APWM
ISO5451
ISO5451-Q1
ISO5851
ISO5851-Q1
Supported N/A Internal +2.5/-5A DESAT (9V) Recommended
use
• Short-circuit
detection
• External
buffer
(optional)
• Bypass AIN/
APWM
• Single output
(optional)
• External
buffer
(optional)
• Bypass AIN/
APWM
• Single output
(optional)
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3 System Overview and Functions
3.1 Features
• Fully compatible with every UCC217xx and ISO5x5x variant
– Available OPNs using either UCC21710 and UCC21750; other variants can be swapped with resistor
changes
• Directly compatible with Wolfspeed's FM3 and XM3 modules
• UCC25800 LLC converter supplies up to 2 W to each driver
– Only a +12-V input voltage needed to generate the primary-side and secondary-side bias voltages
• Status LEDs indicate power-good and fault feedback from each driver
• Isolated temperature sensing when using UCC217xx variants
• Test points for all critical nodes to expedite debugging
• Ability to install external buffer to increase drive strength
3.2 Specifications
Recently, wide bandgap SiC FET based power modules are introduced in power electronics instead
of Si IGBT because of their excellent conduction and switching performance. Compact driver board
UCC21710/50QDWEVM-054 supports SiC modules by reducing parasitics, minimizing switching loss, EMI and
providing full required protection and diagnostics features.
Table 3-1. Electrical Specifications
Parameter Test Conditions Min Nom Max Unit
SUPPLY VOLTAGES AND CURRENTS
Vcc VCC supply voltage 4.5 5.0 5.5 V
Vdd2u,
Vdd2l
VDD supply voltages From transformer and LDO 15 V
Vee2u,
Vee2l
VEE supply voltages From transformer and shunt
regulator
-3 V
DRIVE CURRENT
Ioh Peak source current CLOAD = 10nF 10 A
Iol Peak sink current CLOAD = 10nF 10 A
INPUT/OUTPUT SIGNALS
Vinr, Vrstr IN+, IN-, RST/EN rising threshold 0.7 x VCC V
Vinf, Vrstf IN+, IN-, RST/EN falling threshold 0.3 x VCC V
Vinh, Vrsth INL+, INU+, RST hysteresis 0.1 x VCC V
TIMING PARAMETERS
Trise Drive output rise time CLOAD = 10 nF 33 ns
Tfall Drive output fall time CLOAD = 10 nF 27 ns
Tprop Propagation delay CLOAD = 100 pF 90 ns
SHORT CIRCUIT PROTECTION - OC
Voc Nominal overcurrent threshold 0.63 0.7 0.77 V
Tocfil OC fault deglitch filter Ioc = 5mA 120 ns
Isto Soft turn-off pull down current 400 mA
Vclamp Miller Clamp threshold Reference to VEE 1.5 2.0 2.5 V
Iclamp Miller Clamp current VCLMPI = 0 V, VEE = –2.5 V 4 A
SHORT CIRCUIT PROTECTION - DESAT
Ichg Blanking capacitor charging current 430 500 570 uA
Tdesatleb Leading edge blank time 200 ns
Tdesatfil DESAT deglitch filter 140 ns
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Table 3-1. Electrical Specifications (continued)
Parameter Test Conditions Min Nom Max Unit
Isto Soft turn-off pull down current 400 mA
Vclmpi Miller Clamp threshold Reference to VEE 1.5 2 2.5 V
Iclmpi Miller Clamp current VCLMPI = 0 V, VEE = –2.5 V 4 A
ISOLATION
Viso Withstand isolation voltage for gate
driver
Reinforced, 60s 5.7 kVrms
Cio Barrier capacitance for gate driver 20 pF
Ta Operating Ambient Temperature for
gate driver
-40 25 125 °C
3.3 PCB Pinout
Table 3-2. PCB Pinout
Pinout Location (top/bottom) Function
J1 Top 16-pin connector, connection shown
below
J2 Top LS DESAT drain connection
J3 Bottom LS gate/source connection
J4 Top Temperature sense thermistor connection
J5 Top HS DESAT drain connection
J6 Bottom HS gate/source connection
J7, J8 Bottom For temperature sense adaptor board only
TP2 Top, orange HS RDY
TP3 Top, red LS nFLT
TP4 Top, white +12 V from power supply
TP5 Top, black Ground from power supply with respect to
+12 V
TP6 Top, red HS nFLT
TP7 Top, orange LS RDY
TP8 Top, blue LS PWM input
TP9 Top, brown LS APWM output
TP10 Top, green HS PWM input
TP11, 12, 13 Top, gray Primary side GND
TP15 Top, white HS and LS combined nRST
GATE1 Top MMCX connector, HS gate
GATE2 Top MMCX connector, LS gate
GND1, 2, 3 Top Primary side GND
3.4 Block Diagram
3.4.1 Primary-Side Power
The primary-side power supply block fulfills the following functions:
• Provides +12-V input to the board via the connector or the test point hooks.
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• Converts the +12-V input voltage to +5-V VCC for the gate drivers. This functionality is realized by a
TPS7A25 LDO.
• Uses an ACM4520 common-mode choke to filter out common-mode noise.
The +12-V power supply and the PWM signals should be connected to the same board, either the differential
board or the EVM. Failure to do so might result in EVM component damage.
Figure 3-1. Primary-Side Power
3.4.2 Primary-Side I/O and Diagnostics
The primary-side I/O and diagnostic block fulfills the following functions:
• Provides signal input, including high-side and low-side PWM and RESET, as well as +12-V voltage input to
the half-bridge board.
– If the power and signal inputs are given via the differential board connector, the status output pin of a
power MUX, TPS2121, is used to turn on the SN65C1167 dual differential driver and receiver. The dual
differential driver and receiver then converts the differential gate driver inputs to single-ended gate driver
inputs, and converts single-ended gate driver outputs to differential outputs that will be transmitted to the
differential board.
– If the power and signal inputs are given via the test point hooks on this EVM, the power MUX turns off the
SN65C1167 dual differential driver and receiver. This protects the dual differential driver and receiver from
damage.
• Filters out the high frequency noise in the high-side and low-side differential signals through RLC filters.
• Combines high-side and low-side RDY and nFLT signal into one FLT_OUT signal through an SN74LV21 AND
gate.
• Combines the nRST signal coming from the differential board and the on-board reset button into one RESET
signal through an SN74LV21 AND gate.
The +12-V power supply and the PWM signals should be connected to the same board, either the differential
board or the EVM. Failure to do so might result in EVM component damage.
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Figure 3-2. Primary-Side I/O
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3.4.3 Secondary-Side Bias Supply
The secondary-side power supply block fulfills the following functions:
• Converts the +12-V input voltage to +15-V/-3-V bipolar bias voltage supply for the secondary side of the
gate drivers. Each gate driver has its own bias supply. This is achieved by using one UCC25800 transformer
driver, one Würth Elektronik 750319177 transformer, and one ATL431-Q1 programmable shunt regulator for
each gate driver.
– The bias supply voltage can be adjusted by following the instructions in Section 6.1.1 and Section 6.1.2.
• Reduces the noise of the positive secondary side supply voltage by using an TPS7B84-Q1 LDO.
– This LDO can also be bypassed by following the instructions in Section 6.1.4.
Figure 3-3. Secondary-Side Bias Supply
3.4.4 Output Stage Gate Loop
The gate driver output block consists of the turn-on gate resistor, the turn-off gate resistor, and the connectors to
the SiC MOSFET/IGBT module. Test points are also placed near the output pins for easy measurement of the
gate voltage.
Figure 3-4. Output Stage Gate Loop
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3.4.5 Current Booster
The current booster is optional and not populated by default, but can be populated as desired to increase the
gate drive strength. To use the current booster, follow the instructions in Section 6.2.2. There is also an RC
damper circuit connected to the bases of the current booster circuit. This RC damper circuit helps with the soft
turn-off functionality to reduce Vds overshoot during a short-circuiting event.
3.4.6 Short-Circuit Detection System
The short-circuit detection system on the board provides protection in case of a short-circuit event. When a short
circuit is detected, the gate driver pulls the OUTL low with a fixed current soft turn-off, and the FLT flag will
be raised on the primary side. If the short-circuit detection system is not used or if an IGBT/MOSFET is not
connected to the board, J2 and J5 should be shorted to COM to prevent false short-circuit triggering.
3.4.6.1 Short-Circuit Detection - DESAT
The Vds voltage detection threshold can be calculated with the equation below mentioned in this FAQ:
VDET = VDESAT −VZ−n × VF−Ichg × Rlim (1)
With the 9V internal DESAT detection threshold, the two STTH122A diode with forward voltage of 0.6 V each,
the 475-Ω limiting resistor, the Zener diode with 2.7-V Zener voltage, and the 500-µA internal charging current,
the Vds DESAT detection threshold is calculated to be 4.86 V. If another Vds voltage detection threshold is
desired, use the "DESAT calculator" tab in this UCC217xx calculator to calculate how different parameters can
result in a different voltage detection threshold.
In this EVM, method mentioned in this FAQ is implemented to increase the DESAT charging current in case of
a short-circuiting event. Increasing the DESAT charging current can decrease the blanking time of the capacitor
and provide better protection for SiC MOSFETs. The blanking time for this circuit can be calculated by the
equation mentioned in the same FAQ, which is calculated to be 125 ns. This blanking time calculation is valid
for VDD = 15 V; if another VDD value is used, the blanking time will vary. Note that the tBLK calculation in the
UCC217xx calculator mentioned above is not accurate since it does not take into consideration of the additional
charging current.
Figure 3-5. DESAT Circuit
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3.4.6.2 Short-Circuit Detection - OC
This EVM implemented the configuration mentioned in page 41 of the UCC21710 data sheet. The Vds voltage
detection threshold can be calculated with the equation below mentioned on the same page of the data sheet:
VDET = VOCTH ×R2+ R3
R3−VZ−n × VF(2)
With the 0.7-V internal OC detection threshold, the two STTH122A diode with forward voltage of 0.6 V each,
R2 = 4990 Ω, and R3 = 590 Ω, the Vds DESAT detection threshold is calculated to be 5.42 V. This detection
threshold is valid for VDD = 15 V. If another Vds voltage detection threshold is desired, use the "DESAT Using
OC Calculator" tab in this UCC217xx calculator to calculate how different parameters can result in a different
voltage detection threshold.
The blanking time can also be calculated by the equation on the same page of the UCC21710 data sheet. With a
220-pF blanking capacitor, the blanking time is calculated to be 156 ns. This blanking time is valid for VDD = 15
V. The UCC217xx calculator mentioned above can also be used to calculate the change in blanking time as the
circuit parameter changes.
Figure 3-6. OC Circuit
3.4.7 Temperature-Sense System
The temperature-sensing system is available for certain UCC217xx variants with the AIN-APWM channel. The
AIN pin has a 200-µA internal current source. Connect a thermistor or thermodiode to J4; as the temperature
varies, the voltage monitored by the AIN pin will be different. The APWM will output a PWM wave with a duty
cycle proportional to the voltage monitored by the AIN pin.
If the AIN-APWM channel is not used, J4 can be left open or populated by a jumper. The APWM pin should be
floated.
Figure 3-7. Temperature-Sense System
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4 Using the EVM
4.1 Equipment List
• Power Supplies
– Need to provide at least 12 V and 1 A to power up the EVM
• Function Generator and Accessories
– One 2-channel function generator
– Two standard 50-Ω BNC coaxial cables
• Oscilloscope and Accessories
– Oscilloscope 500 MHz or higher with at least four channels
– Four passive voltage probes with at least 500-MHz bandwidth
• Digital Multimeters
– Two digital multimeters
• Other
– Connection wires of various length
4.2 Test Setups and Procedures
4.2.1 Power-On and Bias Supply Check
Note
This is a low voltage only test; do not attempt to manually probe the test points when a high bus
voltage is applied to this EVM.
1. Tie J2 and J5 to low-side and high-side COM respectively to prevent false triggering of DESAT.
2. Turn on the power supply and adjust the voltage output to 12 V. The power supply can be connected to
either TP4/TP5 on the EVM or to the Wolfspeed differential board.
3. Probe the VCC-GND voltage between the VCC test via and TP11 with a multimeter. This value should be 5
V.
4. Probe the high side VDD-COM voltage by using the VDD2 test point and the COM4 or COM5 test point.
Probe the low side VDD-COM voltage by using the VDD1 test point and the COM1 or COM2 test point.
These values should be 15 V.
5. Probe the high side VEE-COM voltage by using the VEE2 test point and the COM4 or COM5 test point.
Probe the low side VEE-COM voltage by using the VEE1 test point and the COM1 or COM2 test point.
These values should be -3 V.
6. Make sure the 5-V green LED, the HS-BIAS blue LED, and the LS-BIAS blue LED are on. The two red RDY
LEDs and the two red FLT LEDs should be off.
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Figure 4-1. Test Point Locations for Power On Check
4.2.2 Output Switching
To perform this test, make sure tests in Section 4.2.1 has been performed and the gate drivers are powered up
properly.
1. Generate two 10-kHz, 0 V to 5 V complementary PWM waves on two function generator channels. Deadtime
can be added between the two PWM waves. These are the high-side and low-side PWM signals.
2. Connect these channel probes to the Wolfspeed differential board or to the test points on the EVM. The
+12V power supply and the PWM signals should be connected to the same board, either the differential
board or the EVM. If directly connecting the probes to the EVM, connect the high-side PWM channel probe
to TP10 and the low-side PWM channel probe to TP8.
3. Measure the high-side gate voltage with the MMCX connector GATE1, and measure the low-side gate
voltage with the MMCX connector GATE2.
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Figure 4-2. Test Point Locations for Output Switching Check
4.2.3 AIN-APWM Test
To perform this test, make sure tests in Section 4.2.1 have been performed and the gate drivers are powered up
properly. This test is only valid for devices with the AIN-APWM channel, such as UCC21750.
1. Disconnect any jumper or thermistor from J4.
2. Measure the AIN voltage at the TEMP1 via close to pin 1 of the low-side gate driver. This voltage should be
around 3.92 V if VDD = 15 V.
3. Measure the APWM duty cycle. According to AIN = 3.92 V and
DAPWM =  −20 × VAIN + 100 (3)
the duty cycle should be 21.6% with ±3% accuracy.
Figure 4-3. Test Point Locations for AIN-APWM Check
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5 EVM Example Measurements
5.1 Short-Circuit Testing
5.1.1 OC Variant: Normal Switching vs Short Circuit Soft Turn-Off
Figure 5-1. OC Variant Normal Turn-Off
Figure 5-2. OC Variant Soft Turn-Off
These two tests were carried out under 200-V bus voltage for an OC variant, UCC21737. An Wolfspeed SiC
WAB400M12BM3 module together with the Wolfspeed KIT-CRD-CIL12N-BM evaluation module were used for
these tests.
Figure 5-1 contains the waveforms of a short-circuit test with normal switching. As the figure shows, when the
SiC MOSFET module is switched off, the Vds overshoot value is approximately 450 V. Figure 5-2 contains
the waveforms of a short-circuit test with the soft turn-off feature activated. As the figure shows, when the SiC
MOSFET undergoes soft turn-off, the Vds overshoot is greatly reduced to approximately 170 V.
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5.1.2 DESAT Variant: Normal Switching vs Short Circuit Soft Turn-Off
Figure 5-3. DESAT Variant Normal Turn-Off
Figure 5-4. DESAT Variant Soft Turn-Off
These two tests were carried out under 400-V bus voltage for a DESAT variant, UCC21755. An Wolfspeed SiC
WAB400M12BM3 module together with the Wolfspeed KIT-CRD-CIL12N-BM evaluation module were used for
these tests.
Figure 5-3 contains the waveforms of a short-circuit test with normal switching. As the figure shows, when the
SiC MOSFET module is switched off, the Vds overshoot value is approximately 450 V. Figure 5-4 contains
the waveforms of a short-circuit test with the soft turn-off feature activated. As the figure shows, when the SiC
MOSFET undergoes soft turn-off, the Vds overshoot is greatly reduced to approximately 120 V.
5.2 Analog Sensing
The table below shows a test carried out by connecting resistors of different values onto the J4 headers. The
AIN voltage, APWM duty cycle, and duty cycle error are included in the table.
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Table 5-1. Isolated Analog Sensing
AIN Voltage Measured APWM Duty Cycle Expected APWM Duty Cycle APWM Duty Cycle Error
0.44V 91.24% 91.2% +0.04%
0.54V 89.36% 89.2% +0.16%
0.73V 8557% 85.4% +0.17%
1.12V 77.62% 77.6% +0.02%
1.72V 65.71% 65.6% +0.11%
2.45V 50.90% 51.0% -0.10%
3.43V 31.30% 31.4% -0.10%
3.98V 20.57% 20.4% +0.17%
4.20V 16.03% 16.0% +0.03%
4.32V 13.58% 13.6% -0.02%
4.45V 10.83% 11.0% -0.17%
4.51V 9.59% 9.8% -0.21%
4.73V 5.17% 5.4% -0.23%
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6 EVM Tuning
6.1 Adjust Power Supplies
6.1.1 Adjust VDD Bias Supply
To decrease the VDD bias supply voltage, change the resistor divider connected to the FB/NC pin of the
TPS7B84-Q1 LDO. The resistors are R4/R5 for the high-side LDO, and R19/R21 for the low-side LDO. The
equation below, mentioned in the TPS7B84-Q1 data sheet, can be used to select the resistors.
VDD = VFB × 1 + R4
R5= 0.65 × 1 + R4 R5(4)
VDD = VFB × 1 + R19
R21 = 0.65 × 1 + R19 R21 (5)
Equation 4 and 5 are used for high-side and low-side VDD resistor selection, respectively.
To increase the VDD bias supply voltage, first increase the +12V input voltage, Vin. The maximum VDD voltage
at a given Vin can be calculated by:
VDD, max = Vin × 1.67 −VEE (6)
since the on-board transformer has a turn ratio of 1:1.67. The default VEE value is -3 V. Then, change the
resistor divider connected to the FB/NC pin of the TPS7B84-Q1 LDO. The resistors are R4/R5 for the high-side
LDO, and R19/R21 for the low-side LDO. The resistor values can be selected based on equation 4 and equation
5 above, with any VDD<VDD,max.
Be aware that VDD-COM should be below 19 V when this board is used to drive Wolfspeed's SiC modules, as
19 V is the absolute max Vgs for the module.
6.1.2 Adjust VEE Bias Supply
The VEE bias supply can be adjusted by adjusting the resistors connecting to the shunt regulator. VEE for the
high-side gate driver and low-side driver can be adjusted separately. If VEE for the high side gate driver needs
to be adjusted, R8/R14 values should be changed; if VEE for the low side gate driver needs to be adjusted,
R25/R35 values should be changed. The table below outlines the VEE bias supply voltage with corresponding
recommended resistor values.
Table 6-1. VEE Bias Supply Voltage and Recommended Resistor Values
VEE Voltage (V) R8/R25 Value (Ω) R14/R35 Value (Ω)
-3 1.00k 4.99k
-3.2 1.40k 4.99k
-3.5 2.00k 4.99k
-3.75 2.49k 4.99k
-4 2.00k 3.32k
If another VEE voltage is desired, equations from the ATL431-Q1 data sheet can be used. Equations 7 and 8
below can be used to select resistor values for high-side VEE and low-side VEE respectively.
VEE =−1 + R8
R14 × Vref + Iref × R8=−1 + R8 R14 × 2.5V + 30nA × R8(7)
VEE =−1 + R25
R35 × Vref + Iref × R25 =−1 + R25 R35 × 2.5V + 30nA × R25 (8)
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6.1.3 Switch to Unipolar Bias Supply
The secondary side bipolar power supply can be switched to a unipolar power supply. The high side and low
side can be adjusted separately. To change the high-side gate driver to a unipolar power supply, short R10 and
remove R15; to change the low-side gate driver to a unipolar power supply, short R31 and remove R36.
Be aware that VDD-COM should be below 19 V when this board is used to drive Wolfspeed's SiC modules,
as 19 V is the absolute max Vgs for the module. If this method is used to change the bipolar supply to a
unipolar supply, either reduce the VIN to below 11.3 V or regulate the voltage by using the U4 and U5 LDO.
Otherwise, the gate-source voltage is likely to exceed the maximum operating value of the Wolfspeed SiC
MOSFET module.
6.1.4 Bypass VDD LDO
The VDD LDO can be bypassed on either the high side gate driver or the low side. To bypass the VDD LDO on
the high side gate driver, populate R1. To bypass the VDD LDO on the low side gate driver, populate R16.
6.2 Adjust Drive Strength
6.2.1 Without Booster
To adjust the drive strength, change the gate resistors, R47 and R51. The maximum drive strength for the
UCC217xx family can be calculated by the equation below:
Isource_peak = min 10A,  VDD −VEE
ROH_EFF + RON + RG_Int (9)
Isink_peak = min 10A,  VDD −VEE
ROL + ROFF + RG_Int (10)
RON and ROFF stand for the external gate resistors. RG_Int stands for the internal gate resistor of the IGBT/SiC
MOSFET. ROH_EFF and ROL values can be obtained from the electrical characteristic section of the UCC217xx
data sheet.
6.2.2 Enabling/Disabling Booster Stage
If a higher drive strength is required, an on-board booster stage can be populated. To populate the booster
stage, remove R47 and R51, populate Q1 with PHPT60410NYX, and populate Q2 with PHPT60410PYX for
the low-side gate driver. Remove R81 and R85, populate Q4 with PHPT60410NYX, and populate Q5 with
PHPT60410PYX for the high-side driver. Other BJTs with the same package can also be used.
The booster stage might impede the soft turn-off feature. To realize soft turn-off after enabling the booster stage,
a damper circuit, the R56/C46 combination for low-side driver and the R89/C61 combination for high-side driver,
can be used. Without the damper circuit, the OUTL pin will try to sink the soft turn-off current from the base
of the booster stage. The booster stage will amplify this current and result in a larger turn-off current for the
IGBT/SiC MOSFET and a higher Vds overshoot. The capacitor in the damper circuit can help mediate this issue
by supplying current to the OUTL pin during a soft turn-off event, thus resulting in lower current being pulled from
the base of the booster stage and lower turn-off current for the SiC MOSFET/IGBT.
6.3 Adaptations for Other ISO5x5x / UCC217xx Variants
6.3.1 Adapting EVM for UCC21732/39
Main Difference Pins/Parts Affected Actions
UCC21732 and UCC21739 do not have
internal Miller clamp; an external Miller clamp
can be used.
• Pin 7: CLMPE
• R60 and R92
• Q3 and Q6
• Desolder R60 and R92
• Populate Q3 and Q6 with Miller Clamp
FETs
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