Texas Instruments bq25600 User manual

1
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
User's Guide
SLUUBK9–September 2017
bq25600, bq25600D PWR771 Evaluation Module
This user's guide provides detailed testing instructions for the bq25600 and bq25600D evaluation modules
(EVM). Also included are descriptions of the necessary equipment, equipment setup, and procedures. The
reference documentation contains the printed-circuit board layouts, schematics, and the bill of materials
(BOM).
Contents
1 Introduction ................................................................................................................... 2
1.1 EVM Features....................................................................................................... 2
1.2 I/O Descriptions..................................................................................................... 2
2 Test Summary................................................................................................................ 4
2.1 Equipment ........................................................................................................... 4
2.2 Equipment Setup.................................................................................................... 4
2.3 Test Procedure...................................................................................................... 6
3 PCB Layout Guideline....................................................................................................... 7
4 Board Layout, Schematic, and Bill of Materials.......................................................................... 7
4.1 Schematic............................................................................................................ 7
4.2 Bill of Materials .................................................................................................... 10
List of Figures
1 Connections of the EV2300/2400 Kit ..................................................................................... 4
2 Original Test Setup for bq25600xEVM.................................................................................... 5
3 Selection Window of bqStudio Evaluation Software .................................................................... 5
4 Schematic for bq25600 EVM............................................................................................... 8
5 Schematic for bq25600D EVM............................................................................................. 9
List of Tables
1 Device Data Sheets ......................................................................................................... 2
2 PWR771 EVM Connections................................................................................................ 2
3 EVM Jumper Connections and Shunt Installation....................................................................... 3
4 Recommended Operating Conditions..................................................................................... 3
5 bq25600EVM-771 Bill of Materials....................................................................................... 10
6 bq25600DEVM-771 Bill of Materials..................................................................................... 14
Trademarks
All trademarks are the property of their respective owners.

Introduction www.ti.com
2SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
1 Introduction
1.1 EVM Features
For detailed features and operation, see Table 1 for a list of devices and their data sheets.
Table 1. Device Data Sheets
Device Data Sheet EVM Label Variant
bq25600 SLUSCJ4 bq25600EVM-771 003
bq25600D SLUSCJ4 bq25600DEVM-771 004
The bq25600(D) evaluation module (EVM) is a complete charger module for evaluating an I2C-controlled
single NVDC-1 charge using the bq25600(D) device.
This EVM does not include the USB-to-GPIO or EV2300/EV2400 interface board. To evaluate the EVM, a
USB-to-GPIO interface board must be ordered separately.
1.2 I/O Descriptions
Table 2 lists the jumper connections available on this EVM.
Table 2. PWR771 EVM Connections
Jack Description
J1-VAC Input: positive terminal
J1-GND Input: negative terminal (ground terminal)
J2-PMID PMID pin connection, power bank output
J2-GND Ground and power bank output negative terminal
J3 Output mini-USB port
J4-SYS Connected to system
J4-GND Ground
J5-BAT Connected to battery pack
J5-BATSNS Connected to battery pack for voltage sensing
J5-GND Ground
J6 I2C 4-pin connector
J7 USB-TO-GPIO connector

www.ti.com Introduction
3
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 3 lists the EVM jumper connections.
Table 3. EVM Jumper Connections and Shunt Installation
Jack Description bq25600 Setting bq25600D Setting
JP1 D+ and PSEL pin selection Short PSEL to low Not installed
JP2 CE pin setting: pull low to enable the charge Installed Installed
JP3 SCL and OTG pin setting Not installed Not installed
JP4 STAT, PG, CE, INT, OTG pins internal pullup source (VSYS
or BAT) Short to VSYS Short to VSYS
JP5 TS pin to GND Not installed Not installed
JP6 TS resistor divider pullup source (REGN) connection Installed Installed
JP7 Internal 10 k to GND to TS pin Installed Installed
JP8 BATSNS selection Short to BAT Short to BAT
JP9 QON and VSET pin setting Not installed Not installed
JP10 STAT pin setting Installed Installed
JP12 SDA and PG pin setting Installed Not installed
JP13 D+ and PSEL to J3 Not installed Installed
JP14 D- and PG to J3 Not installed Installed
JP15 D- and PG pin setting Installed Not installed
JP100 Add 1-µF (C100) VBUS capacitor Not installed Not installed
JP101 Add 10-µF (C101) PMID capacitor Not installed Not installed
JP103 Add 10-µF (C103) SYS capacitor Not installed Not installed
JP104 Add 4.7-µF (C104) BAT capacitor Not installed Not installed
S1 QON control Default off Default off
S2 Switch to short indicator LEDs Default off Default off
Table 4 lists the recommended operating conditions for this EVM.
Table 4. Recommended Operating Conditions
Symbol Description MIN TYP MAX UNIT
Supply voltage, VVBUS Input voltage from AC adapter 3.9 5 14 V
Battery voltage, VBAT Voltage applied at VBAT terminal 0 4.208 4.624 V
IBAT Fast charging current 0 2.5 A
IBATOP Discharging current through
internal MOSFET 0 6 A
Supply current, IIN Maximum input current from AC
adapter input 0 3.25 A

To Computer
USB Port
4-Pin
Cable to
EVM
I2C
EV2300/2400
Texas Instruments
USB
Test Summary www.ti.com
4SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
2 Test Summary
2.1 Equipment
This section includes a list of supplies required for testing this EVM.
• Power supply: Power supply #1 (PS#1): A power supply capable of supplying 5 V at 1 A is required.
While this part can handle larger voltage and current, it is not necessary for this procedure.
• Load #1:
– 4-quadrant supply, constant voltage < 4.5 V, A 0 – 20 V, 0 – 5 A, > 30-W system, DC electronic
load and setting as constant voltage load mode
or
– Kepco load: BOP 20 – 5M, DC 0 to ±20 V, 0 to ±5 A (or higher).
• Load #2: Use with Boost Mode, PMID to GND load, 10 Ω, 5 W or greater.
• Meters:
– Six Fluke 75 multimeters, (equivalent or better)
or
– Four equivalent voltage meters and two equivalent current meters. The current meters must be
capable of measuring 5-A current.
• Computer: A computer with at least one USB port and a USB cable. The bq25600DEVM evaluation
software must be properly installed.
• USB-to-GPIO Communication Kit: EV2300/EV2400 USB-based PC interface board.
• Software: Download bqStudio from www.ti.com.
1. Double click the Battery Management Studio-1.3.20_Build2-Setup installation file, follow the
installation steps. The software supports the Microsoft® Windows® XP and Windows 7 operating
systems.
2. Copy the bq25600 bqz file to C:\ti\BatteryManagementStudio\config
2.2 Equipment Setup
Use the following instructions to set up the equipment:
1. Set PS#1 for 5-V DC, 1-A current limit and then turn off the supply.
2. Connect the output of PS#1 in series with a current meter (multimeter) to J1 (VBUS and GND).
3. Connect a voltage meter across TP1 (VBUS) and TP18 (GND).
4. Turn on the load, set it to constant voltage mode and set the output to 2.5 V.
5. Turn off (disable) the load.
6. Connect the load to J5 (BAT and GND), as shown in Figure 2.
7. Connect one voltage meter across TP9 (BAT) and TP20 (GND) to measure the battery voltage and
another voltage meter across TP28 and TP29 to measure the battery current sensing resistor voltage.
The sensing resistor is 10 mΩ. It is also OK to use the optional current meter in series to measure the
battery current.
8. Connect the EV2300/2400 USB interface board to the computer with a USB cable and from the I2C
port to J8 with the 4-pin cable. The connections are shown in Figure 1.
Figure 1. Connections of the EV2300/2400 Kit

Copyright © 2017, Texas Instruments Incorporated
www.ti.com Test Summary
5
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
9. Install shunts as shown in Table 3, or as shown in Figure 2.
Figure 2. Original Test Setup for bq25600xEVM
9. Turn on the computer and launch the Battery Management Studio (bqStudio).
10. Select Charger and bq25600 (or bq25600D, accordingly) evaluation software. Figure 3 shows the
main window of the software.
Figure 3. Selection Window of bqStudio Evaluation Software

Test Summary www.ti.com
6SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
2.3 Test Procedure
2.3.1 Current Settings
To turn on PS#1, measure →Vsys (TP8(SYS), TP17(GND)) = 3.65 (typical).
2.3.2 Charge Voltage and Current Regulation of VIN and Device ID Verification
Verify the outputs and IC for the EVM.
2.3.3 Charger Mode Verification
1. Enable Load #1 from Section 2.2, Step 4 to 5.
2. Measure the voltage across J3 and J4 as follows:
• Measure →V(TP8(SYS), TP17(GND)) = 3.65 V (typical)
• Measure →V(TP9(BAT), TP17(GND)) = 2.5 V (typical)
• Measure →IBAT = 75 mA (typical) ( = precharge current)
3. Change the load to 3.7 V:
• Measure →V(TP8(SYS), TP17(GND)) = 3.8 V (typical)
• Measure →V(TP9(BAT), TP17(GND)) = 3.7 V (typical)
• Measure →IBAT = 1500 mA (typical) ( = fast charge current)
4. Adjust R10 to change the charging current.
5. Adjust R11 to change input current limit.
6. Turn off and disconnect Load #1.
7. Turn off and disconnect PS#1.
2.3.4 Boost Mode Verification
Follow these instructions for boost mode verification:
1. Do not install JP3.
2. If the constant voltage load connected from BAT+ to GND is not a 4-quadrant supply (sources current),
remove the load and use the power source disconnected in step one, set to 3.7 V and 2-A current limit,
and connect between BAT+ and GND.
3. Apply 10 Ω(5 W or greater) across J2 PMID(+) to GND(–).
4. Verify VPMID to GND on J2.
Measure →VPMID = 5.15 V (typical).
5. Turn off and disconnect the power supply.
6. Remove the 10-Ωresistor at PMID.

www.ti.com PCB Layout Guideline
7
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
2.3.5 Helpful Tips
• The leads and cables to the various power supplies, batteries and loads have resistance. The current
meters also have series resistance. The charger dynamically reduces charge current depending on the
voltage sensed at its VBUS pin (using the VINDPM feature), BAT pin (as part of normal termination),
and TS pin (through its battery temperature monitoring feature via battery thermistor). Therefore,
voltmeters must be used to measure the voltage as close to the IC pins as possible instead of relying
on the digital readouts of the power supply. If a battery thermistor is not available, make sure shunts
JP9 and JP10 are in place.
• When using a source meter that can source and sink current as your battery simulator, TI highly
recommends adding a large (1000+ μF) capacitor at the EVM BAT and GND connectors in order to
prevent oscillations at the BAT pin due to mismatched impedances of the charger output and source
meter input within their respective regulation loop bandwidths. Configuring the source meter for 4-wire
sensing eliminates the need for a separate voltmeter to measure the voltage at the BAT pin. When
using 4-wire sensing, always ensure that the sensing leads are connected in order to prevent
accidental overvoltage by the power leads.
• For precise measurements of charge current and battery regulation near termination, the current meter
in series with the battery or battery simulator should not be set to auto-range and may need be
removed entirely. An alternate method for measuring charge current is to either use an oscilloscope
with hall effect current probe or place a 1% or better, thermally capable (for example, 0.010 Ωin 1210
or larger footprint) resistor in series between the BAT pin and battery and measure the voltage across
that resistor.
3 PCB Layout Guideline
Minimize the switching node rise and fall times for minimum switching loss. Proper layout of the
components minimizing high-frequency current path loop is important to prevent electrical and magnetic
field radiation and high-frequency resonant problems. This PCB layout priority list must be followed in the
order presented for proper layout:
1. Place the input capacitor as close as possible to the PMID pin and GND pin connections and use the
shortest copper trace connection or GND plane.
2. Put an output capacitor near to the inductor and the IC.
3. Decoupling capacitors should be placed next to the IC pins and make the trace connection as short as
possible.
4. Place the inductor input terminal and SW pin as close as possible. Minimize the copper area of this
trace to lower electrical and magnetic field radiation but make the trace is wide enough to carry the
charging current. Do not use multiple layers in parallel for this connection. Minimize parasitic
capacitance from this area to any other trace or plane.
5. It is OK to connect all grounds together to reduce PCB size and improve thermal dissipation.
6. Try to avoid ground planes in parallel with high frequency traces in other layers
See the EVM design for the recommended component placement with trace and via locations.
4 Board Layout, Schematic, and Bill of Materials
4.1 Schematic
Figure 4 shows the schematic for the bq25600 EVM.

1 2
3 4
5 6
7 8
9 10
J7
DNP
0
R21
DNP
200
R19
DNP
200
R20
DNP SDA
SCL
PGND
VBUS 1
D- 2
D+ 3
ID 4
GND 5
6 7 8
11 10
9
J3
VAC
PGND
PGND
4
1
2
3
J6
PGND
SCL
SDA
/CE
D-_/PG
D+_PSEL
PGND
VBUS
VAC
GND
PMID
GND
Vbus: 3.9V to 14V
1000pF
C2
DNP
PGND
10.0kR4
10.0k
R5
JP3
DNP
/CE
AGND
AGND
TP2TP1
1µF
C1
TP3 TP4 TP7
J1
13V
D1
DNP
2.21k
R17
30.1k
R23
10
R26
DNP
0.1µF
C11
DNP
System
GND
GND
PGND
Battery
PGND
PULL-UP
TS
GND
10µF
C9
10µF
C10
10µF
C19
DNP
20V D3
DNP
VSYS: 3.5V to 4.75V
AGND
40V D2
DNP
0.047µF
C7
0
R25
1
2
3
J5
TP6
PGND
1µH
L1
4.7k
R15
AGND
S1
STAT
REGN
3
5,6,8 4,7
1,2,
Q1
CSD17313Q2
DNP
0
R2
DNP
PGND
JP16
DNP
JP17
DNP
PGND
PGND
1µF
C18
DNP
SCL
SDA
VBUS PMID
VAC
VAC
SDA
D+_PSEL
D-_/PG
10k ohm
R10
DNP
221
R8
DNP
2.80k
R9
DNP
PGND
/CE
10K
TS
20V
D6
DNP
J2
1
2
3
JP1
AGND
10.0k
R6
REGN
D+_PSEL
JP2
/CE
AGND
PMID
10µF
C3
10µF
C17
DNP
10µF
C4
DNP
1000pF
C5
DNP
4.7µF
C6
AGND
PMID
/QON
/QON
JP5
10.0k
R24
5.23k
R22
JP6
REGN
JP7
REGN
110pF
C8
DNP
INT
AGND
SW
DNP
PGND
1
2
3
JP4
PULL-UP
JP18
DNP
JP11
DNP
1000pF
C12
DNP
10µF
C13
4.7µF
C20
DNP
4.7µF
C14
DNP
1
2
3
JP8
NT1
Net-Tie
0
R16
DNP
Green
D4
REGN
RTOP TS
BATSNS
BAT
PSEL
GND
REGN
/CE
GND
GND
OTG
TP9
TP8
SYS
BAT
BAT
SYS
TP5
REGN BATSNS INTSCL
TP10 TP11
TS
TS
TP12
DNP
TP13
D-_/PG
TP14 TP15
/QOND+_PSEL
TP16
/CE
TP17 TP18 TP19 TP20
AGNDPGND
BAT
SYS
PULLUP
158
R12
DNP
AGND
10k ohm
R11
DNP
1.00k
R3
DNP
PULL-UP
SYS
DNP
BAT
DNP
PMID
DNP
BAT
SYS
SW
PMID
JP13
DNP
SCL
1
2
3
JP9
DNP
AGND
/QON
1µF
C15
0.1µF
C16
AGND
0
R1
STAT
STAT
BATSNS
J4
BTST
JP10
2.21k
R7
Green
D5
JP12
SDA
TP21
VAC
0
R27
DNP
D-_/PG
10.0k
R29
DNP
1 2
JP14
DNP
JP15
10.0k
R13 PULL-UP
GND A1
GND B1
REGN C4
SYS C2
BAT C1
SW A2
SW B2
BTST C3
SYS D2
BAT D1
PMID
B3 PMID
A3
STAT E5
SYS E2
BAT E1
VBUS
A4
VBUS
B4
INT F4
SYS F2
BAT F1
NC
B5
SCL
F5
SDA
E4
PSEL
C5
BATSNS F3
VAC
A5
TS D3
QON D4
PG
D5
CE
E3
U1
BQ25600YFFR
1 2
4 3
S2
10.0kR28
TP22 TP23
0.01
R30
0.01
R31
D7
DNP
BATCON
0.01
R32
TP24 TP27
TP25 TP26
TP28
TP29
1µH
L2
DNP
BATSNS
Copyright © 2017, Texas Instruments Incorporated
Board Layout, Schematic, and Bill of Materials www.ti.com
8SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Figure 4. Schematic for bq25600 EVM

1 2
3 4
5 6
7 8
9 10
J7
DNP
0
R21
DNP
200
R19
DNP
200
R20
DNP SDA
SCL
PGND
VBUS 1
D- 2
D+ 3
ID 4
GND 5
6 7 8
11 10
9
J3
VAC
PGND
PGND
4
1
2
3
J6
PGND
SCL
SDA
/CE
D-_/PG
D+_PSEL
PGND
VBUS
VAC
GND
PMID
GND
Vbus: 3.9V to 14V
1000pF
C2
DNP
PGND
10.0kR4
10.0k
R5
JP3
DNP
/CE
AGND
AGND
TP2TP1
1µF
C1
TP3 TP4 TP7
J1
13V
D1
DNP
2.21k
R17
30.1k
R23
10
R26
DNP
0.1µF
C11
DNP
System
GND
GND
PGND
Battery
PGND
PULL-UP
TS
GND
10µF
C9
10µF
C10
10µF
C19
DNP
20V D3
DNP
VSYS: 3.5V to 4.75V
AGND
40V D2
DNP
0.047µF
C7
0
R25
1
2
3
J5
TP6
PGND
1µH
L1
4.7k
R15
AGND
S1
STAT
REGN
3
5,6,8 4,7
1,2,
Q1
CSD17313Q2
DNP
0
R2
DNP
PGND
JP16
DNP
JP17
DNP
PGND
PGND
1µF
C18
DNP
SCL
SDA
VBUS PMID
VAC
VAC
SDA
D+_PSEL
D-_/PG
10k ohm
R10
DNP
221
R8
DNP
2.80k
R9
DNP
PGND
/CE
10K
TS
20V
D6
DNP
J2
1
2
3
JP1
DNP
AGND
10.0k
R6
REGN
D+_PSEL
JP2
/CE
AGND
PMID
10µF
C3
10µF
C17
DNP
10µF
C4
DNP
1000pF
C5
DNP
4.7µF
C6
AGND
PMID
/QON
/QON
JP5
10.0k
R24
5.23k
R22
JP6
REGN
JP7
REGN
110pF
C8
DNP
INT
AGND
SW
DNP
PGND
1
2
3
JP4
PULL-UP
JP18
DNP
JP11
DNP
1000pF
C12
DNP
10µF
C13
4.7µF
C20
DNP
4.7µF
C14
DNP
1
2
3
JP8
NT1
Net-Tie
0
R16
DNP
Green
D4
REGN
RTOP TS
BATSNS
BAT
PSEL
GND
REGN
/CE
GND
GND
OTG
TP9
TP8
SYS
BAT
BAT
SYS
TP5
REGN BATSNS INTSCL
TP10 TP11
TS
TS
TP12
DNP
TP13
D-_/PG
TP14 TP15
/QOND+_PSEL
TP16
/CE
TP17 TP18 TP19 TP20
AGNDPGND
BAT
SYS
PULLUP
158
R12
DNP
AGND
10k ohm
R11
DNP
1.00k
R3
DNP
PULL-UP
SYS
DNP
BAT
DNP
PMID
DNP
BAT
SYS
SW
PMID
JP13
SCL
1
2
3
JP9
DNP
AGND
/QON
1µF
C15
0.1µF
C16
AGND
0
R1
STAT
STAT
BATSNS
J4
BTST
JP10
2.21k
R7
Green
D5
JP12
SDA
TP21
VAC
0
R27
DNP
D-_/PG
10.0k
R29
1 2
JP14
JP15
DNP
10.0k
R13 PULL-UP
GND A1
GND B1
REGN C4
SYS C2
BAT C1
SW A2
SW B2
BTST C3
SYS D2
BAT D1
PMID
B3 PMID
A3
STAT E5
SYS E2
BAT E1
VBUS
A4
VBUS
B4
INT F4
SYS F2
BAT F1
NC
B5
SCL
F5
SDA
E4
D+
C5
BATSNS F3
VAC
A5
TS D3
QON D4
D-
D5
CE
E3
U1
BQ25600DYFFR
1 2
4 3
S2
10.0kR28
TP22 TP23
0.01
R30
0.01
R31
D7
DNP
BATCON
0.01
R32
TP24 TP27
TP25 TP26
TP28
TP29
1µH
L2
DNP
BATSNS
Copyright © 2017, Texas Instruments Incorporated
www.ti.com Board Layout, Schematic, and Bill of Materials
9
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Figure 5 shows the schematic for the bq25600D EVM.
Figure 5. Schematic for bq25600D EVM

Board Layout, Schematic, and Bill of Materials www.ti.com
10 SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
4.2 Bill of Materials
Table 5 lists the bq25600EVM-771 BOM.
Table 5. bq25600EVM-771 Bill of Materials
Designator QTY Value Description Package
Reference Part Number Manufacturer Alternate Part Number Alternate Manufacturer
!PCB 1 Printed Circuit Board PWR771 Any
C1 1 1 µF Capacitor, ceramic, 1 µF, 35
V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C3 1 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73L Murata
C6, C13 2 4.7 µF Capacitor, ceramic, 4.7 µF,
16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C7 1 0.047 µF Capacitor, ceramic, 0.047
µF, 25 V, ± 10%, X7R, 0402 0402 GRM155R71E473KA88D Murata
C9, C10 2 10 µF Capacitor, ceramic, 10 µF,
10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
C15 1 1 µF Capacitor, ceramic, 1 µF, 25
V, ± 10%, X7R, 0805 0805 GRM219R71E105KA88D Murata
C16 1 0.1 µF Capacitor, ceramic, 0.1 µF,
25 V, ± 10%, X7R, 0402 0402 GRM155R71E104KE14D Murata
D4, D5 2 Green LED, Green, SMD 1.6 × 0.8 × 0.8 mm LTST-C190GKT Lite-On
H1, H2, H3, H4 4 Bumpon, Hemisphere, 0.44
× 0.20, clear Transparent Bumpon SJ-5303 (CLEAR) 3M
J1, J2, J4 3 Connector, terminal block, 2-
POS, 3.81 mm, TH Terminal block, 2 POS 1727010 Phoenix Contact
J3 1 Connector, receptacle,
Micro-USB Type B, R/A,
bottom mount SMT
7.5 × 2.45 × 5 mm 0473460001 Molex
J5 1 Terminal block receptacle, 3
× 1, 3.81 mm, R/A, TH Terminal block, 3 POS 1727023 Phoenix Contact
J6 1 Header (friction lock), 100
mil, 4 × 1, R/A, TH 4 × 1 R/A header 22-05-3041 Molex
JP1, JP4, JP8 3 Header, 100 mil, 3 × 1, tin,
TH Header, 3-pin, 100 mil, tin PEC03SAAN Sullins Connector Solutions
JP2, JP5, JP6,
JP7, JP10,
JP12, JP15
7 Header, 100 mil, 2 × 1, tin,
TH Header, 2-pin, 100 mil, tin PEC02SAAN Sullins Connector Solutions
L1 1 1 µH Inductor, 1 µH, 3.2 A, 0.028
Ω, SMD 2.5 × 2 mm MPIM252010F1R0M-LF Microgate

www.ti.com Board Layout, Schematic, and Bill of Materials
11
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 5. bq25600EVM-771 Bill of Materials (continued)
Designator QTY Value Description Package
Reference Part Number Manufacturer Alternate Part Number Alternate Manufacturer
LBL1 1 Thermal transfer printable
labels, 0.650" W × 0.200"
H – 10,000 per roll
PCB label 0.650" H
× 0.200" W THT-14-423-10 Brady
R1 1 0.005 Resistor, 0.005, 1%, 0.25 W,
AEC-Q200 Grade 1, 0603 603 ERJ3LWFR005V Panasonic
R7, R17 2 2.21 k Resistor, 2.21 k, 1%, 0.063
W, 0402 0402 CRCW04022K21FKED Vishay-Dale
R15 1 4.7 k Resistor, 4.7 k, 5%, 0.063
W, 0402 0402 CRCW04024K70JNED Vishay-Dale
R22 1 5.23 k Resistor, 5.23 k, 1%, 0.063
W, 0402 0402 CRCW04025K23FKED Vishay-Dale
R23 1 30.1 k Resistor, 30.1 k, 1%, 0.063
W, 0402 0402 CRCW040230K1FKED Vishay-Dale
R25 1 0 Resistor, 0, 5%, 0.063 W,
0402 0402 CRCW04020000Z0ED Vishay-Dale
R30, R31, R32 3 0 .01 Resistor, 0.01, 1%, 1 W,
2010 2010 WSL2010R0100FEA18 Vishay-Dale
S1 1 Switch, normally open, 2.3-N
force, 200-k operations,
SMD
KSR KSR221GLFS C&K Components
S2 1 Switch, SPST, 2 POS, 25
mA, 24 VDC, SMD 3.71 × 5.8 mm 218-2LPST CTS Electrocomponents
SH-JP1, SH-
JP2, SH-JP4,
SH-JP6, SH-
JP7, SH-JP8,
SH-JP10, SH-
JP12, SH-JP15
9 1 × 2 Shunt, 100 mil, gold-plated,
black Shunt SNT-100-BK-G Samtec 969102-0000-DA 3M
TP1, TP2 2 Test point, miniature, red,
TH Red miniature test point 5000 Keystone
TP3, TP4, TP6,
TP7, TP10,
TP11, TP13,
TP14, TP15,
TP16, TP21,
TP24, TP25,
TP26, TP27,
TP28, TP29
17 Test point, miniature, white,
TH White miniature test point 5002 Keystone
TP5, TP8 2 Test point, miniature,
orange, TH Orange miniature test point 5003 Keystone
TP9 1 Test point, miniature, yellow,
TH Yellow miniature test point 5004 Keystone

Board Layout, Schematic, and Bill of Materials www.ti.com
12 SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 5. bq25600EVM-771 Bill of Materials (continued)
Designator QTY Value Description Package
Reference Part Number Manufacturer Alternate Part Number Alternate Manufacturer
TP17, TP18,
TP19, TP20,
TP22, TP23
6 Test point, compact, SMT Testpoint_Keyston
e_Compact 5016 Keystone
U1 1 BQ25600YFF,
YFF0030ACAC (DSBGA-30) YFF0030ACAC BQ25600YFFR Texas Instruments BQ25600YFFT Texas Instruments
C2, C5, C12 0 1000 µF Capacitor, ceramic, 1000 pF,
25 V, ± 5%, C0G/NP0, 0402 0402 C1005C0G1E102J TDK
C4 0 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X7S, 0805 0805 GRM21BC71E106KE11L Murata
C8 0 110 pF Capacitor, ceramic, 110 pF,
25 V, ± 5%, C0G/NP0, 0402 0402 GRM1555C1E111JA01D Murata
C11 0 0.1 µF Capacitor, ceramic, 0.1 µF,
25 V, ± 20%, X7R, 0402 0402 C1005X7R1E104M050BB TDK
C14, C20 0 4.7 µF Capacitor, ceramic, 4.7 µF,
16 V, ± 10%, X5R, 0603 0603 GRM188R61C475KAAJ Murata
C17 0 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73L Murata
C18 0 1 µF Capacitor, ceramic, 1 µF, 35
V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C19 0 10 µF Capacitor, ceramic, 10 µF,
10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51L Murata
D1 0 13 V Diode, TVS, Uni, 13 V, W,
SOD-123W SOD-123W PTVS13VS1UR,115 NXP Semiconductor
D2 0 40 V Diode, Schottky, 40 V, 0.38
A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D3, D6 0 20 V Diode, Schottky, 20 V, 1 A,
152AD 152AD NSR10F20NXT5G ON Semiconductor
FID1, FID2,
FID3, FID4,
FID5, FID6
0 Fiducial mark. There is
nothing to buy or mount. N/A N/A N/A
J7 0 Header (shrouded), 100 mil,
5 × 2, high-temperature,
gold, TH
5 × 2 shrouded
header N2510-6002-RB 3M
JP3, JP11,
JP13, JP14,
JP16, JP17,
JP18
0 Header, 100 mil, 2 × 1, tin,
TH Header, 2-pin, 100 mil, tin PEC02SAAN Sullins Connector Solutions
JP9 Header, 100 mil, 3 × 1, tin,
TH Header, 3-pin, 100 mil, tin PEC03SAAN Sullins Connector Solutions

www.ti.com Board Layout, Schematic, and Bill of Materials
13
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 5. bq25600EVM-771 Bill of Materials (continued)
Designator QTY Value Description Package
Reference Part Number Manufacturer Alternate Part Number Alternate Manufacturer
L2 1 µH Inductor, Wirewound, 1 µH,
4 A, 0.041 Ω, SMD 4.06 × 4.06 mm 74437321010
Q1 1 30 V MOSFET, N-CH, 30 V, 22 A,
DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas Instruments None
R2, R16, R21,
R27 0 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED
R3 1 1.00 k Resistor, 1.00 k, 1%, 0.063
W, 0402 0402 CRCW04021K00FKED Vishay-Dale
R8 1 221 Resistor, 221, 1%, 0.063 W,
0402 0402 CRCW0402221RFKED Vishay-Dale
R9 1 2.80 k Resistor, 2.80 k, 1%, 0.063
W, 0402 0402 CRCW04022K80FKED Vishay-Dale
R10, R11 2 10-kΩTrimmer, 10-kΩ, 0.25W, TH 4.5 × 8 × 6.7 mm 3266W-1-103LF Bourns
R12 1 158 Resistor, 158, 1%, 0.063 W,
0402 0402 CRCW0402158RFKED Vishay-Dale
R19, R20 0 200 Resistor, 200, 1%, 0.063 W,
0402 0402 CRCW0402200RFKED Vishay-Dale
R26 0 10 Resistor, 10, 5%, 0.063 W,
0402 0402 CRCW040210R0JNED Vishay-Dale
R29 0 10.0 k Resistor, 10.0 k, 1%, 0.063
W, 0402 0402 CRCW040210K0FKED Vishay-Dale
SH-JP3, SH-
JP5, SH-JP9,
SH-JP11, SH-
JP13, SH-
JP14, SH-JP16
3 1 × 2 Fiducial mark. There is
nothing to buy or mount. Shunt SNT-100-BK-G Samtec 969102-0000-DA 3M
SW1, SW2,
SW3, SW4 4 Compact probe tip circuit board test points, TH, 25 per
?
TH scope probe 131-5031-00 Tektronix
TP12 0 Resistor, 10.0 k, 1%, 0.063
W, 0402 White miniature test point 5002 Keystone

Board Layout, Schematic, and Bill of Materials www.ti.com
14 SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 6 lists the bq25600DEVM-771 BOM.
Table 6. bq25600DEVM-771 Bill of Materials
Designator QTY Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
!PCB 1 Printed Circuit Board PWR771 Any
C1 1 1 µF Capacitor, ceramic, 1 µF,
35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C3 1 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73 LMurata
C6, C13 2 4.7 µF Capacitor, ceramic, 4.7
µF, 16 V, ± 10%, X5R,
0603
0603 GRM188R61C475KAAJ Murata
C7 1 0.047 µF Capacitor, ceramic, 0.047
µF, 25 V, ± 10%, X7R,
0402
0402 GRM155R71E473KA88
DMurata
C9, C10 2 10 µF Capacitor, ceramic, 10 µF,
10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51 LMurata
C15 1 1 µF Capacitor, ceramic, 1 µF,
25 V, ± 10%, X7R, 0805 0805 GRM219R71E105KA88 DMurata
C16 1 0.1 µF Capacitor, ceramic, 0.1
µF, 25 V, ± 10%, X7R,
0402
0402 GRM155R71E104KE14
DMurata
D4, D5 2 Green LED, Green, SMD 1.6 × 0.8 x 0.8 mm LTST-C190GKT Lite-On
H1, H2, H3, H4 4 Bumpon, Hemisphere,
0.44 × 0.20, Clear Transparent Bumpon SJ-5303 (CLEAR) 3M
J1, J2, J4 3 Connector terminal block,
2 POS, 3.81 mm, TH 2-POS terminal block 1727010 Phoenix Contact
J3 1 Connector, receptacle,
Micro-USB Type B, R/A,
bottom mount SMT
7.5 x 2.45 x 5 mm 0473460001 Molex
J5 1 Terminal block receptacle,
3 × 1, 3.81 mm, R/A, TH Terminal block, 3 POS 1727023 Phoenix Contact
J6 1 Header (friction lock), 100
mil, 4x1, R/A, TH 4x1 R/A header 22-05-3041 Molex
JP2, JP5, JP6,
JP7, JP10,
JP12, JP13,
JP14
8 Header, 100 mil, 2x1, Tin,
TH Header, 2 pin, 100 mil, tin PEC02SAAN Sullins Connector Solutions
JP4, JP8 2 Header, 100 mil, 3x1, Tin,
TH Header, 3 pin, 100 mil, tin PEC03SAAN Sullins Connector Solutions
L1 1 1 µH Inductor, 1 µH, 3.2 A,
0.028 Ω, SMD 2.5 x 2 mm MPIM252010F1R0M-LF Microgate

www.ti.com Board Layout, Schematic, and Bill of Materials
15
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 6. bq25600DEVM-771 Bill of Materials (continued)
Designator QTY Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
LBL1 1 Thermal transfer printable
labels, 0.650" W x 0.200"
H – 10,000 per roll
PCB label 0.650" H
× 0.200" W THT-14-423-10 Brady
R1 1 0.005 Resistor, 0.005, 1%, 0.25
W, AEC-Q200 Grade 1,
0603
603 ERJ3LWFR005V Panasonic
R4, R5, R6,
R13, R24, R28,
R29
7 10.0 k Resistor, 10.0 k, 1%,
0.063 W, 0402 0402 CRCW040210K0FKED Vishay-Dale
R7, R17 2 2.21 k Resistor, 2.21 k, 1%,
0.063 W, 0402 0402 CRCW04022K21FKED Vishay-Dale
R15 1 4.7 k Resistor, 4.7 k, 5%, 0.063
W, 0402 0402 CRCW04024K70JNED Vishay-Dale
R22 1 5.23 k Resistor, 5.23 k, 1%,
0.063 W, 0402 0402 CRCW04025K23FKED Vishay-Dale
R23 1 30.1 k Resistor, 30.1 k, 1%,
0.063 W, 0402 0402 CRCW040230K1FKED Vishay-Dale
R25 1 0 Resistor, 0, 5%, 0.063 W,
0402 0402 CRCW04020000Z0ED Vishay-Dale
R30, R31, R32 3 0.01 Resistor, 0.01, 1%, 1 W,
2010 2010 WSL2010R0100FEA18 Vishay-Dale
S1 0 Switch, normally open,
2.3-N force, 200-k
operations, SMD
KSR KSR221GLFS C&K Components
S2 1 Switch, SPST, 2 POS, 25
mA, 24 VDC, SMD 3.71x5.8mm 218-2LPST CTS Electrocomponents
SH-JP2, SH-
JP4, SH-JP6,
SH-JP7, SH-
JP8, SH-JP10,
SH-JP13, SH-
JP14
1 × 2 Shunt, 100-mil, gold-
plated, black Shunt SNT-100-BK-G Samtec 969102-0000-DA 3M
TP1, TP2 2 Test point, miniature, red,
TH Red miniature test point 5000 Keystone

Board Layout, Schematic, and Bill of Materials www.ti.com
16 SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 6. bq25600DEVM-771 Bill of Materials (continued)
Designator QTY Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
TP3, TP4, TP6,
TP7, TP10,
TP11, TP12,
TP13, TP14,
TP15, TP16,
TP21, TP24,
TP25, TP26,
TP27, TP28,
TP29
18 Test point, miniature,
white, TH White miniature test point 5002 Keystone
TP5, TP8 2 Test point, miniature,
orange, TH Orange miniature test point 5003 Keystone
TP9 1 Test point, miniature,
yellow, TH Yellow miniature test point 5004 Keystone
TP17, TP18,
TP19, TP20,
TP22, TP23
6 Test point, compact, SMT Testpoint_Keystone
_Compact 5016 Keystone
U1 1 BQ25600DYFF,
YFF0030ACAC
(DSBGA-30)
YFF0030ACAC BQ25600DYFFR Texas Instruments BQ25600DYFFT Texas Instruments
C2, C5, C12 0 1000 pF Capacitor, ceramic, 1000
pF, 25 V, ± 5%,
C0G/NP0, 0402
0402 C1005C0G1E102J TDK
C4 0 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X7S, 0805 0805 GRM21BC71E106KE11 LMurata
C8 0 110 pF Capacitor, ceramic, 110
pF, 25 V, ± 5%,
C0G/NP0, 0402
0402 GRM1555C1E111JA01
DMurata
C11 0 0.1 µF Capacitor, ceramic, 0.1
µF, 25 V, ± 20%, X7R,
0402
0402 C1005X7R1E104M050B
BTDK
C14, C20 0 4.7 µF Capacitor, ceramic, 4.7
µF, 16 V, ± 10%, X5R,
0603
0603 GRM188R61C475KAAJ Murata
C17 10 µF Capacitor, ceramic, 10 µF,
25 V, ± 10%, X5R, 0805 0805 GRM21BR61E106KA73 LMuRata
C18 1 µF Capacitor, ceramic, 1 µF,
35 V, ± 10%, X5R, 0603 0603 GMK107BJ105KA-T Taiyo Yuden
C19 10 µF Capacitor, ceramic, 10 µF,
10 V, ± 10%, X7R, 0805 0805 GRM21BR71A106KE51 LMuRata
D1 13 V Diode, TVS, Uni, 13 V, W,
SOD-123W SOD-123W PTVS13VS1UR,115 NXP Semiconductor

www.ti.com Board Layout, Schematic, and Bill of Materials
17
SLUUBK9–September 2017
Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 6. bq25600DEVM-771 Bill of Materials (continued)
Designator QTY Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
D2, D7 1 40 V Diode, Schottky, 40 V,
0.38 A, SOD-523 SOD-523 ZLLS350TA Diodes Inc.
D3, D6 0 20 V Diode, Schottky, 20 V, 1
A, 152AD 152AD NSR10F20NXT5G ON Semiconductor
FID1, FID2,
FID3, FID4,
FID5, FID6
0 Fiducial mark. There is
nothing to buy or mount. N/A N/A N/A
J7 0 Header (shrouded), 100
mil, 5 × 2, high-
temperature, gold, TH
5x2 Shrouded
header N2510-6002-RB 3M
JP1, JP9 3 Header, 100 mil, 3 × 1,
tin, TH Header, 3 PIN, 100mil, Tin PEC03SAAN Sullins Connector Solutions
JP3, JP11,
JP15, JP16,
JP17, JP18
Header, 100 mil, 2 × 1,
tin, TH Header, 2 PIN, 100mil, Tin PEC02SAAN Sullins Connector Solutions
L2 1 µH Inductor, Wirewound, 1
µH, 4 A, 0.041 Ω, SMD 4.06x4.06mm 74437321010 Würth Elektronik
Q1 1 30 V MOSFET, N-CH, 30 V, 22
A, DQK0006C (WSON-6) DQK0006C CSD17571Q2 Texas Instruments None
R2, R16, R21,
R27 0 0 Resistor, 0, 5%, 0.063 W, 0402 0402 CRCW04020000Z0ED Vishay-Dale
R3 1 1.00 k Resistor, 1.00 k, 1%,
0.063 W, 0402 0402 CRCW04021K00FKED Vishay-Dale
R8 1 221 Resistor, 221, 1%, 0.063
W, 0402 0402 CRCW0402221RFKED Vishay-Dale
R9 1 2.80 k Resistor, 2.80 k, 1%,
0.063 W, 0402 0402 CRCW04022K80FKED Vishay-Dale
R10, R11 2 10-kΩTrimmer, 10-kΩ, 0.25W,
TH 4.5x8x6.7mm 3266W-1-103LF Bourns
R12 1 158 Resistor, 158, 1%, 0.063
W, 0402 0402 CRCW0402158RFKED Vishay-Dale
R19, R20 0 200 Resistor, 200, 1%, 0.063
W, 0402 0402 CRCW0402158RFKED Vishay-Dale
R26 0 10 Resistor, 10, 5%, 0.063
W, 0402 0402 CRCW040210R0JNED Vishay-Dale
SH-JP1, SH-
JP3, SH-JP5,
SH-JP9, SH-
JP11, SH-JP12,
SH-JP15, SH-
JP16
4 1 × 2 Shunt, 100-mil, Gold-
plated, black Shunt SNT-100-BK-G Samtec 969102-0000-DA 3M

Board Layout, Schematic, and Bill of Materials www.ti.com
18 SLUUBK9–September 2017
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
bq25600, bq25600D PWR771 Evaluation Module
Table 6. bq25600DEVM-771 Bill of Materials (continued)
Designator QTY Value Description Package Reference Part Number Manufacturer Alternate Part
Number Alternate Manufacturer
SW1, SW2,
SW3, SW4 4 Compact probe tip circuit board test points, TH, 25
per
TH Scope Probe 131-5031-00 Tektronix
TP12 0 Test point, miniature,
white, TH White Miniature Test point 5002 Keystone

STANDARD TERMS FOR EVALUATION MODULES
1. Delivery: TI delivers TI evaluation boards, kits, or modules, including any accompanying demonstration software, components, and/or
documentation which may be provided together or separately (collectively, an “EVM” or “EVMs”) to the User (“User”) in accordance
with the terms set forth herein. User's acceptance of the EVM is expressly subject to the following terms.
1.1 EVMs are intended solely for product or software developers for use in a research and development setting to facilitate feasibility
evaluation, experimentation, or scientific analysis of TI semiconductors products. EVMs have no direct function and are not
finished products. EVMs shall not be directly or indirectly assembled as a part or subassembly in any finished product. For
clarification, any software or software tools provided with the EVM (“Software”) shall not be subject to the terms and conditions
set forth herein but rather shall be subject to the applicable terms that accompany such Software
1.2 EVMs are not intended for consumer or household use. EVMs may not be sold, sublicensed, leased, rented, loaned, assigned,
or otherwise distributed for commercial purposes by Users, in whole or in part, or used in any finished product or production
system.
2Limited Warranty and Related Remedies/Disclaimers:
2.1 These terms do not apply to Software. The warranty, if any, for Software is covered in the applicable Software License
Agreement.
2.2 TI warrants that the TI EVM will conform to TI's published specifications for ninety (90) days after the date TI delivers such EVM
to User. Notwithstanding the foregoing, TI shall not be liable for a nonconforming EVM if (a) the nonconformity was caused by
neglect, misuse or mistreatment by an entity other than TI, including improper installation or testing, or for any EVMs that have
been altered or modified in any way by an entity other than TI, (b) the nonconformity resulted from User's design, specifications
or instructions for such EVMs or improper system design, or (c) User has not paid on time. Testing and other quality control
techniques are used to the extent TI deems necessary. TI does not test all parameters of each EVM.
User's claims against TI under this Section 2 are void if User fails to notify TI of any apparent defects in the EVMs within ten (10)
business days after delivery, or of any hidden defects with ten (10) business days after the defect has been detected.
2.3 TI's sole liability shall be at its option to repair or replace EVMs that fail to conform to the warranty set forth above, or credit
User's account for such EVM. TI's liability under this warranty shall be limited to EVMs that are returned during the warranty
period to the address designated by TI and that are determined by TI not to conform to such warranty. If TI elects to repair or
replace such EVM, TI shall have a reasonable time to repair such EVM or provide replacements. Repaired EVMs shall be
warranted for the remainder of the original warranty period. Replaced EVMs shall be warranted for a new full ninety (90) day
warranty period.
3Regulatory Notices:
3.1 United States
3.1.1 Notice applicable to EVMs not FCC-Approved:
FCC NOTICE: This kit is designed to allow product developers to evaluate electronic components, circuitry, or software
associated with the kit to determine whether to incorporate such items in a finished product and software developers to write
software applications for use with the end product. This kit is not a finished product and when assembled may not be resold or
otherwise marketed unless all required FCC equipment authorizations are first obtained. Operation is subject to the condition
that this product not cause harmful interference to licensed radio stations and that this product accept harmful interference.
Unless the assembled kit is designed to operate under part 15, part 18 or part 95 of this chapter, the operator of the kit must
operate under the authority of an FCC license holder or must secure an experimental authorization under part 5 of this chapter.
3.1.2 For EVMs annotated as FCC – FEDERAL COMMUNICATIONS COMMISSION Part 15 Compliant:
CAUTION
This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not
cause harmful interference, and (2) this device must accept any interference received, including interference that may cause
undesired operation.
Changes or modifications not expressly approved by the party responsible for compliance could void the user's authority to
operate the equipment.
FCC Interference Statement for Class A EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is
operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not
installed and used in accordance with the instruction manual, may cause harmful interference to radio communications.
Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to
correct the interference at his own expense.

FCC Interference Statement for Class B EVM devices
NOTE: This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of
the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential
installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance
with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference
will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which
can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more
of the following measures:
•Reorient or relocate the receiving antenna.
•Increase the separation between the equipment and receiver.
•Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.
•Consult the dealer or an experienced radio/TV technician for help.
3.2 Canada
3.2.1 For EVMs issued with an Industry Canada Certificate of Conformance to RSS-210 or RSS-247
Concerning EVMs Including Radio Transmitters:
This device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions:
(1) this device may not cause interference, and (2) this device must accept any interference, including interference that may
cause undesired operation of the device.
Concernant les EVMs avec appareils radio:
Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation
est autorisée aux deux conditions suivantes: (1) l'appareil ne doit pas produire de brouillage, et (2) l'utilisateur de l'appareil doit
accepter tout brouillage radioélectrique subi, même si le brouillage est susceptible d'en compromettre le fonctionnement.
Concerning EVMs Including Detachable Antennas:
Under Industry Canada regulations, this radio transmitter may only operate using an antenna of a type and maximum (or lesser)
gain approved for the transmitter by Industry Canada. To reduce potential radio interference to other users, the antenna type
and its gain should be so chosen that the equivalent isotropically radiated power (e.i.r.p.) is not more than that necessary for
successful communication. This radio transmitter has been approved by Industry Canada to operate with the antenna types
listed in the user guide with the maximum permissible gain and required antenna impedance for each antenna type indicated.
Antenna types not included in this list, having a gain greater than the maximum gain indicated for that type, are strictly prohibited
for use with this device.
Concernant les EVMs avec antennes détachables
Conformément à la réglementation d'Industrie Canada, le présent émetteur radio peut fonctionner avec une antenne d'un type et
d'un gain maximal (ou inférieur) approuvé pour l'émetteur par Industrie Canada. Dans le but de réduire les risques de brouillage
radioélectrique à l'intention des autres utilisateurs, il faut choisir le type d'antenne et son gain de sorte que la puissance isotrope
rayonnée équivalente (p.i.r.e.) ne dépasse pas l'intensité nécessaire à l'établissement d'une communication satisfaisante. Le
présent émetteur radio a été approuvé par Industrie Canada pour fonctionner avec les types d'antenne énumérés dans le
manuel d’usage et ayant un gain admissible maximal et l'impédance requise pour chaque type d'antenne. Les types d'antenne
non inclus dans cette liste, ou dont le gain est supérieur au gain maximal indiqué, sont strictement interdits pour l'exploitation de
l'émetteur
3.3 Japan
3.3.1 Notice for EVMs delivered in Japan: Please see http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page 日本国内に
輸入される評価用キット、ボードについては、次のところをご覧ください。
http://www.tij.co.jp/lsds/ti_ja/general/eStore/notice_01.page
3.3.2 Notice for Users of EVMs Considered “Radio Frequency Products” in Japan: EVMs entering Japan may not be certified
by TI as conforming to Technical Regulations of Radio Law of Japan.
If User uses EVMs in Japan, not certified to Technical Regulations of Radio Law of Japan, User is required to follow the
instructions set forth by Radio Law of Japan, which includes, but is not limited to, the instructions below with respect to EVMs
(which for the avoidance of doubt are stated strictly for convenience and should be verified by User):
1. Use EVMs in a shielded room or any other test facility as defined in the notification #173 issued by Ministry of Internal
Affairs and Communications on March 28, 2006, based on Sub-section 1.1 of Article 6 of the Ministry’s Rule for
Enforcement of Radio Law of Japan,
2. Use EVMs only after User obtains the license of Test Radio Station as provided in Radio Law of Japan with respect to
EVMs, or
3. Use of EVMs only after User obtains the Technical Regulations Conformity Certification as provided in Radio Law of Japan
with respect to EVMs. Also, do not transfer EVMs, unless User gives the same notice above to the transferee. Please note
that if User does not follow the instructions above, User will be subject to penalties of Radio Law of Japan.