Toshiba TPCS8209 User manual

TPCS8209
2002-01-17
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8209
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 19 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 9.2 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID= 200 µA)
Maximum Ratings (Ta =
==
=25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 20 V
Drain-gate voltage (RGS =20 kΩ) VDGR 20 V
Gate-source voltage VGSS ±12 V
DC (Note 1) ID5
Drain current
Pulse (Note 1) IDP 20
A
Single-device
operation (Note 3a) PD (1) 1.1
Drain power
dissipation
(t =10 s)
(Note 2a)
Single-device value
at dual operation
(Note 3b)
PD (2) 0.75
W
Single-device
operation (Note 3a) PD (1) 0.6
Drain power
dissipation
(t =10 s)
(Note 2b)
Single-device value
at dual operation
(Note 3b)
PD (2) 0.35
W
Single pulse avalanche energy
(Note 4)
EAS 32.5 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR 0.075 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
8 7 6 5
1 2 3 4
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TPCS8209
2002-01-17
2
Thermal Characteristics
Characteristics Symbol Max Unit
Single-device operation
(Note 3a) Rth (ch-a) (1) 114
Thermal resistance, channel to ambient
(t =10 s) (Note 2a) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 167
°C/W
Single-device operation
(Note 3a) Rth (ch-a) (1) 208
Thermal resistance, channel to ambient
(t =10 s) (Note 2b) Single-device value at
dual operation
(Note 3b)
Rth (ch-a) (2) 357
°C/W
Marking (Note 6)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)
(a) (b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4: VDD =16 V, Tch =25°C (initial), L =1.0 mH, RG=25 Ω, IAR =5 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: ○on lower right of the marking indicates Pin 1.
*shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively)
※
Type
S8209
FR-4
25.4 ×25.4 ×0.8
(Unit: mm)
FR-4
25.4 ×25.4 ×0.8
(Unit: mm)

TPCS8209
2002-01-17
3
Electrical Characteristics (Ta =
==
=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS =±10 V, VDS =0 V ±10 µA
Drain cut-OFF current IDSS V
DS =20 V, VGS =0 V 10 µA
V(BR) DSS I
D=10 mA, VGS =0 V 20 
Drain-source breakdown voltage
V(BR) DSX I
D=10 mA, VGS =−12 V 8 
V
Gate threshold voltage Vth V
DS =10 V, ID=200 µA 0.5 1.2 V
VGS =2.0 V, ID=3.5 A 34 60
VGS =2.5 V, ID=3.5 A 26 40
Drain-source ON resistance RDS (ON)
VGS =4.0 V, ID=4.0 A 19 30
mΩ
Forward transfer admittance |Yfs| VDS =10 V, ID=2.5 A 4.6 9.2 S
Input capacitance Ciss 1280 
Reverse transfer capacitance Crss 130 
Output capacitance Coss
VDS =10 V, VGS =0 V, f =1 MHz
150 
pF
Rise time tr4.5 
Turn-ON time ton 11 
Fall time tf7.3 
Switching time
Turn-OFF time toff
Duty
<
=1%, tw=10 µs 33 
ns
Total gate charge
(gate-source plus gate-drain) Qg15 
Gate-source charge 1 Qgs1 3.3 
Gate-drain (“miller”) charge Qgd
VDD ∼
−16 V, VGS =5 V, ID=5 A
3.5 
nC
Source-Drain Ratings and Characteristics (Ta =
==
=25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP   20 A
Forward voltage (diode) VDSF I
DR =5 A, VGS =0 V −1.2 V
RL=4 Ω
VDD ∼
−10 V
0 V
VGS 5 V
4.7 Ω
ID=2.5 A
VOUT

TPCS8209
2002-01-17
4
ID– VDS ID– VDS
ID– VGS
VDS – VGS
|Yfs| – ID RDS (ON) – ID
Common source
Ta =25°C
Pulse test
0
0 0.4 0.8 1.2 1.6 2.0
1
2
3
4
5
VGS =1.4 V
1.5
1.6
1.7
1.8
4 3
2
1.9
Forward transfer admittance Yfs(S)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Drain current ID(A)
Drain-source voltage VDS (V)
Drain current ID(A)
Gate-source voltage VGS (V)
Drain current ID(A)
Gate-source voltage VGS (V)
Drain current ID(A) Drain current ID(A)
Drain-source ON resistance
RDS (ON) (mΩ)
0
0 1 2 3 4 5
2
4
6
8
10
Common source
VDS =10 V
Pulse test
Ta =−55°C
25100
Common source
Ta =25°C
Pulse test
0
0 2 4 6 8 10
0.4
0.8
1.2
1.6
2
ID=10 A
5
2.5
1.25
1
0.1 1 10
10
100
Common source
VDS =10 V
Pulse test
Ta =−55°C
100
25
3
5
30
50
1
0.1 1 10
10
100
Common source
Ta =25°C
Pulse test
VGS =2 V
2.5
4
3
5
30
50
0
2
4
6
8
10
VGS =1.4 V
1.6
1.7
1.92
0 1 2 3
Common source
Ta =25°C
Pulse test
4
1.8
1.5
3
4 5

TPCS8209
2002-01-17
5
RDS (ON) – Ta
IDR – VDS
Capacitance – VDS Vth – Ta
PD– Ta
Dynamic input/output characteristics
0
−100 −50 0 15010050
0.2
0.4
0.6
0.8
1
1.2
1.4
Common source
VDS =10 V
ID=200 µA
Pulse test
Common source
Pulse test
0
−50
10
20
30
40
50
60
0 50 150100
ID=5 A
2.5
1.25
ID=5, 2.5, 1.25 A
ID=5, 2.5, 1.25 A
VGS =4.0 V
VGS =2.5 V
VGS =2.0 V
10
0.1
100
1000
10000
1 10 100
Ciss
Coss
Crss
Common source
Ta =25°C
f =1MHz
VGS =0 V
Drain power dissipation PD(W)
Gate threshold voltage Vth (V)
Ambient temperature Ta (°C)
Drain-source ON resistance
RDS (ON) (mΩ)
Drain-source voltage VDS (V)
Drain-source voltage VDS (V)
Capacitance C (pF)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Drain-source voltage VDS (V)
Gate-source voltage VGS (V)
Total gate charge Qg(nC)
Drain reverse current IDR (A)
0
0
0.2
0.4
0.6
0.8
1
1.2
50 100 200150
(1)
(4)
(3)
(2)
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0
0
5
10
15
20
25
30
4 8 12 16 20 24 28 32
0
2
4
6
8
10
12
VDS =16 V
Common source
ID=5 A
Ta =25°C
Pulse test
VGS
0.1
0 −0.2 −0.4 −0.6 −0.8 −1
0.3
0.5
1
10
3
5
VGS =0 V
Common source
Ta =25°C
Pulse test
124

TPCS8209
2002-01-17
6
Drain-source voltage VDS (V)
Drain current ID(A)
Safe operating area
Pulse width tw(S)
rth −tw
Normalized transient thermal impedance
rth (°C/W)
0.1
0.001 0.01 0.1 1 10 100 1000
1
0.3
0.5
3
5
10
30
50
100
300
1000 Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b) (1)
500
(2)
(3)
(4)
Single pulse
0.01
0.01 0.03 0.1 0.3 1 3 10 10030
0.03
0.05
0.1
0.3
0.5
1
3
5
10
30
100
50
*Single pulse Ta =25°C
Curves must be derated linearly
with increase in temperature.
IDmax (pulse) *
1 ms *
VDSS max
Single-device value at dual
operation (Note 3b)
10 ms *

TPCS8209
2002-01-17
7
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
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• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
A
RESTRICTIONS ON PRODUCT USE