Panasonic 2SB1463G User manual

Transistors
1
Publication date: May 2007 SJC00388AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1463G
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SC2440G
■Features
•High collector-emitter voltage (Base open) VCEO
•Low noise voltage NV
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −150 V
Collector-emitter voltage (Base open) VCEO −150 V
Emitter-base voltage (Collector open) VEBO −5V
Collector current IC−50 mA
Peak collector current ICP −100 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC=−100 µA, IB=0 −150 V
Emitter-base voltage (Collector open) VEBO IE=−10 µA, IC=0 −5V
Collector-base cutoff current (Emitter open) ICBO VCB =−100 V, IE=0 −1µA
Forward current transfer ratio *hFE VCE =−5 V, IC=−10 mA 130 330 
Collector-emitter saturation voltage VCE(sat) IC=−30 mA, IB=−3 mA −1V
Transition frequency fTVCB =−10 V, IE=10 mA, f =200 MHz 200 MHz
Collector output capacitance Cob VCB =−10 V, IE=0, f =1 MHz 4 pF
(Common base, input open circuited)
Noise voltage NV VCE =−10 V, IC=−1 mA, GV=80 dB 150 mV
Rg=100 kΩ, Function =FLAT
Rank R S
hFE 130 to 220 185 to 330
■Package
•Code
SSMini3-F3
•Marking Symbol: I
•Pin Name
1. Base
2. Emitter
3. Collector

2SB1463G
2SJC00388AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VCE(sat) IChFE ICCob VCB
PCTaICVCE ICVBE
040 80 120
0
20
40
60
80
100
120
140
Collector power dissipation P
C
(mW)
Ambient temperature T
a
(°C)
0−12−10−8−2−6−4
0
−60
−50
−20
−10
−40
−30
IB=−1.0 mA
− 0.2 mA
− 0.1 mA
− 0.3 mA
− 0.4 mA
− 0.5 mA
− 0.7 mA
− 0.9 mA
− 0.8 mA
− 0.6 mA
IC / IB= 10
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0−0.2 −0.6 −0.8 −1.0 −1.2−0.4 −1.4
0
−50
−30
−40
−20
−10
VCE = −5 V
Ta= 85°C
25°C
−25°C
Collector-base voltage VCB (V)
Collector current IC(mA)
I
C
/ I
B
= 10
Collector current I
C
(mA)
Collector-emitter saturation voltage V
CE(sat)
(V)
− 0.01
− 0.1
− 0.1
−1
−1−10 −100
T
a
=85°C
−25°C
25°C
VCE = −5 V
Collector current IC(mA)
Forward current transfer ratio hFE
−1−10 −100
Ta= 85°C
25°C
−25°C
0
50
350
300
250
100
200
150
0−40−10 −30−20
f =1 MHz
T
a
= 25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) C
ob
(pF)
10
1
0.1

This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini3-F3 Unit: mm
1.00 ±0.05
(0.50) (0.50)
1.60 +0.05 −0.03
0.26 +0.05 −0.02
12
3
0.85 +0.05
−0.03
1.60 ±0.05
0.70 +0.05
−0.03
0 to 0.10
(5°)
(0.45)
0.13 +0.05
−0.02
0.375 ±0.05
(5°)

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