Panasonic 2SC3934 User manual

Transistors
1
Publication date: February 2003 SJC00144BED
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■Features
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB =10 V, IE=0 100 nA
Emitter-base cutoff current (Collector open) IEBO VEB =2 V, IC=01µA
Forward current transfer ratio hFE VCE =10 V, IC=10 mA 40 
Transition frequency fTVCE =10 V, IC=10 mA, f =0.8 GHz 4.5 GHz
Collector output capacitance Cob VCB =10 V, IE=0, f =1 MHz 1.2 pF
(Common base, input open circuited)
Forward transfer gain S21e2VCE =10 V, IC=20 mA, f =0.8 GHz 9 12 dB
Maximum unilateral power gain GUM VCE =10 V, IC=20 mA, f =0.8 GHz 12 14 dB
Noise figure NF VCE =10 V, IC=5 mA, f =0.8 GHz 1.3 2.5 dB
■Electrical Characteristics Ta=25°C ±3°C
Unit: mm
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 15 V
Collector-emitter voltage (Base open) VCEO 12 V
Emitter-base voltage (Collector open) VEBO 2.5 V
Collector current IC30 mA
Peak collector current ICP 50 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Marking Symbol: 1U
2.1±0.1
1.3±0.1
0.3+0.1
–0.0
2.0±0.2
1.25±0.10 (0.425)
1
3
2
(0.65) (0.65)
0.2±0.1
0.9±0.10 to 0.1
0.9+0.2
–0.1
0.15+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3934
2SJC00144BED
VCE(sat) IChFE ICfTIC
PCTaICVCE ICVBE
Cob VCB NF ICS11 , S22
1
0
0.2
−0.2
0.4
−0.4
0.8
−0.8
−0.6
1.5
−1.5
−2
−3
−4
−5
−10
2
3
4
5
10
−1
101.5 54321.8.6.4.2
1 000 MHz
1 000 MHz
S
22
S
11
800 MHz
800 MHz
500 MHz
500 MHz
V
CE
=10 V
I
C
=20 mA
E : Earth
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
012108264
0
30
25
20
15
10
5
T
a
=25°C
250 µA
200 µA
150 µA
100 µA
50 µA
I
B
=300 µA
Collector current I
C
(mA)
Collector-emitter voltage V
CE
(V)
0 2.01.60.4 1.20.8
0
60
50
40
30
20
10
V
CE
=10 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 I
C
/ I
B
=10
T
a
=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
240
200
160
120
80
40
VCE =10 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
1 10 100
0
8
6
2
4
Ta=25°C
VCE =10 V
Transition frequency fT(GHz)
Collector current IC(mA)
1 10 100
0
1.2
1.0
0.8
0.6
0.4
0.2
IE=0
f =1 MHz
Ta=25°C
Collector-base voltage VCB (V)
Collector output capacitance (Common base, input open circuited) Cob (pF)
1 10 100
0
8
6
2
4
R g =50 Ω
V
CE
=10 V
f =800 MHz
Noise figure NF (dB)
Collector current I
C
(mA)
This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3934
3
SJC00144BED
S11 , S22
+90°
+60°
−60°
+120°
−120°
+30°
−30°
+150°
−150°
±180°0°
−90°
−30 5 15 2010−15−10 −25−20
1 000 MHz
VCE =10 V
IC=20 mA
E : Earth
S21
S12
1 000 MHz
800 MHz
800 MHz
500 MHz
500 MHz
This product complies with the RoHS Directive (EU 2002/95/EC).

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