Panasonic 2SA2163 User manual

Transistors
Publication date: May 2005 SJC00336AED
1
2SA2163
Silicon PNP epitaxial planar type
For high frequency amplifi cation

Features
 Features

High transition frequency f
 High transition frequency f
T
High transition frequency fT High transition frequency f

Optimum for high-density mounting and downsizing of the equipment for
 Optimum for high-density mounting and downsizing of the equipment for 
Ultraminiature leadless package
0.6 mm
×
1.0 mm (height 0.39 mm)

Absolute Maximum Ratings
 Absolute Maximum Ratings 
T
a
= 25
a = 25 a
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
30
V
Collector-emitter voltage (Base open)
V
CEO
−
20
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
30
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
Tj T
125
°
C
Storage temperature
T
stg
Tstg T
−
55 to
+
125
°
C

Electrical Characteristics
 Electrical Characteristics 
T
a
= 25
a = 25 a
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter voltage
V
BE
VBE V
V
CE
=
CE = CE
−
10 V, I
C
=
−
1 mA
−
0.7
− 0.7−
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
10 V, I
E
= 0
E = 0 E
−
0.1
− 0.1−
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
CE = CE
−
20 V, I
B
= 0
−
100
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
−
5 V, I
C
= 0
−
10
µ
A
Forward current transfer ratio
h
FE
hFE h
V
CE
=
CE = CE
−
10 V, I
C
=
−1
mA
70
220

Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
10 mA, I
B
=
−
1 mA
−
0.1
− 0.1−
V
Transition frequency
f
T
fT f
V
CB
=
−
10 V, I
E
= 1 mA, f = 200 MHz
E = 1 mA, f = 200 MHz E
150
300
MHz
Noise fi gure
NF
V
CB
=
−
10 V, I
E
= 1 mA, f = 5 MHz
E = 1 mA, f = 5 MHz E
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
=
−
10 V, I
E
= 1 mA, f = 2 MHz
E = 1 mA, f = 2 MHz E
22
50
Ω
Reverse transfer capacitance (Common emitter)
C
re
V
CB
=
−
10 V, I
E
= 1 mA, f = 10.7 MHz
E = 1 mA, f = 10.7 MHz E
1.2
2.0
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 6J
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39+0.01
−0.03
0.25±0.05 0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2163
2
SJC00336AED
P
C

T
 T
a
Ta T
I
a I a
C

V
 V
CB
I
C

V
 V
CE
V
CE(sat)

I
 I
C
h
FE
hFE h

I
 I
C
C
C C C
ob

V
 V
CB
0 40 12080
0
120
40
80
2SA2163_PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0−0.4 −0.8 −1.2
0
−10
−20
−30
2SA2163_IC-VCE
Collector current IC (mA)
Collector-base voltage VCB (V)
VCE = −10 V
Ta = 85°C
25°C−25°C
0−4−8−12
0
−4
−8
−12
−16
−20
2SA2163_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IB = 200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
Ta = 25°C
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SA2163_VCE(sat)-IC
IC /IB = 10
Ta = 85°C
25°C
−25°C
− 0.1 −1−10 −100
0
120
160
40
80
Collector current IC (mA)
Forward current transfer ratio hFE
2SA2163_hFE-IC
VCE = −5 V
Ta = 85°C
25°C
−25°C
0 10 20 30
0.1
10
1
Collector-base voltage VCB (V)
2SA2163_Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
 Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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