Fuji Electric P642 Series Instructions for use

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
Application Manual
Small IPM (Intelligent Power Module)
P642 Series
6MBP**XT*065-50
April 2024

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
This Instruction contains the product specifications, characteristics, data, materials, and structures as of
April 2024. The contents are subject to change without notice for specification changes or other reason.
When using a product listed in this Instruction be sure to obtain the latest specifications.
The application examples in this note show the typical examples of using Fuji products and this note
shall neither assure to enforce the industrial property including some other rights nor grant the license.
Although Fuji Electric Co., Ltd. continually strives to enhance product quality and reliability, a small
percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor
products in your equipment, be sure to take adequate safety measures such as redundant, flame-
retardant and fail-safe design in order to prevent a semiconductor product failure from leading to a
physical injury, property damage or other problems.
The products described in this application manual are manufactured with the intention of being used in
the following industrial electronic and electrical devices that require normal reliability.
・Compressor motor inverter
・Fan motor inverter for room air conditioner
・Compressor motor inverter for heat pump applications, etc.
If you need to use a semiconductor product in this application note for equipment requiring higher
reliability than normal, such as listed below, be sure to contact Fuji Electric Co., Ltd. to obtain prior
approval. When using these products, take adequate safety measures such as a backup system to
prevent the equipment from malfunctioning when a Fuji Electric’s product incorporated in the equipment
becomes faulty.
・Transportation equipment (mounted on vehicles and ships)
・Trunk communications equipment
・Traffic-signal control equipment
・Gas leakage detectors with an auto-shutoff function
・Disaster prevention / security equipment
・Safety devices, etc.
Do not use a product in this application note for equipment requiring extremely high reliability
such as:
・Space equipment ・Airborne equipment ・Atomic control equipment
・Submarine relaying equipment ・Medical equipment
All rights reserved. No part of this application note may be reproduced without permission in writing from
Fuji Electric Co., Ltd.
If you have any question about any portion of this application note, ask Fuji Electric Co., Ltd. or its sales
agencies. Neither Fuji Electric Co., Ltd. nor its agencies shall be liable for any injury or damage caused
by any use of the products not in accordance with instructions set forth herein.
i
Cautions

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
CONTENTS
Chapter 1 Product Outline
ii
1.
Introduction
1
-2
2.
Product Lineup and Target Application
1
-5
3.
Definition of Type Name
1
-6
4.
Marking Specification
1
-7
5.
Package Outline Dimensions
1
-8
6.
Absolute Maximum Ratings
1
-9
Chapter 2 Description of Terminal Symbols and Terminology
1.
Description of Terminal Symbols
2
-2
2.
Description of Terminology
2
-3
Chapter 3 Details of Control & Protection Functions
1.
Control Power Supply, VCCH(U,V,W), VCCL, COM
3
-2
2.
High
-side Bias Voltage, VB(U,V,W), VS(U,V,W) 3
-6
3.
Function of Built
-in BSDs (Bootstrap Diodes) 3
-9
4.
Signal Input, IN(HU,HV,HW), IN(LU,LV,LW)
3-
14
5.
Overcurrent Protection Function, IS
3-
17
6.
Fault Status Output Function, VFO, CFO
3-
19
7.
Temperature Output Function, TEMP
3-
21
8.
Overheating Protection Function
3-
23
Chapter 4 Details of Inverter Block
1.
Connection of Bus Voltage Input Terminal and Low
-side IGBTs Emitter 4
-2
2.
Short Circuit Protection
4
-3
3.
Setting of External Shunt Resistor for Overcurrent Protection
4
-5
Chapter 5 Recommended Wiring and Layout
1.
Examples of Application Circuit
5
-2
2.
Recommendations and Precautions in PCB Design
5
-6
1-1
2-1
5-1
4-1
3-1

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
CONTENTS
Chapter 6 Mounting Guidelines and Thermal Design
iii
1.
Soldering to PCB
6
-2
2.
Mounting to Heat Sink
6
-2
3.
Heat Sink Selection
6
-3
Chapter 7 Notes
1.
Precautions for Use
7
-2
2.
Precautions for Handling and Storage
7
-3
6-1
7-1

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
Chapter 1 Product Outline
1-1
1.
Introduction
1
-2
2.
Product Lineup and Target Application
1
-5
3.
Definition of Type Name
1
-6
4.
Marking Specification
1
-7
5.
Package Outline Dimensions
1
-8
6.
Absolute Maximum Ratings
1
-9

MT6M15234 c
1. Introduction
This manual describes the following contents for Fuji IGBT Intelligent Power Module “Small IPM
P642 series”
•Product summary
•Explanation of terminal symbols and terms
•Detailed explanation and design guideline of control terminals and power terminals
•Recommended wiring, layout and mounting guidelines
© Fuji Electric Co., Ltd. All rights reserved. 1-2
<Product overview>
•IGBT modules used in inverters for compressors and air conditioner fans are developing rapidly in
response to the growing demand for energy saving, equipment miniaturization and weight reduction.
•IGBTs are devices that combine the high-speed switching performance of power MOSFETs and the
high-voltage, high-current capabilities of bipolar transistors, and are expected to further develop in
the future.
•Among them, the IPM (Intelligent Power Module) is a 3-phase IGBT inverter bridge circuit with
integrated gate drive circuits and protection circuits.
<Product features>
•7th generation IGBT technology reduces power loss and realizes energy saving of equipment.
•Expansion of operating current by guaranteed Tvjop=150oC and time limited Tvj=175oC operation.
•Expansion of overload operating area by higher accuracy of short circuit protection detection.
•Lineup of 650V / 50A, 75A.
•Total power loss is reduced by improving the trade-off between Collector-Emitter saturation voltage
VCE(sat) and switching loss.
<Internal circuit>
•The control IC of upper side arms have built-in high voltage level shift circuit (HVIC).
•Both the low-side and high-side IGBTs can be driven directly by a microprocessor. The voltage level
of input signal is 3.3V or 5.0V.
•No reverse bias power supply is required due to the wiring length between the built-in drive circuit
and IGBT is short and the impedance of the drive circuit is low.
•IPM has built-in bootstrap diodes (BSD) and can be driven by a single power supply. No insulated
power supplies for the high-side drive are needed.

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 1-3
Fig.1-1 Internal circuit diagram

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 1-4
Fig.1-2 Package external view
<Built-in protection circuit>
•The following built-in protection circuits are incorporated in the product:
(OC): Overcurrent protection
(UV): Under voltage protection for power supplies of control IC
(LT): Temperature sensor output function
(OH): Overheating protection (only applied to some products)
(FO): Fault status output
•The OC protection circuit protects the IGBT from overcurrent due to load short-circuit and arm
short-circuit. This protection circuit adopts both sense current method and external shunt resistor
method, thus arm short-circuit protection is possible.
•The UV protection circuit is triggered when there is voltage drop at the control power supply and the
high-side drive power supply. It is integrated into all IGBT drive circuits.
•The OH protection circuit protects the product from overheating. It is built into the low-side control
IC (LVIC).
•The temperature sensor output function outputs temperature as analog voltage. It is built into LVIC.
•The FO function outputs a fault signal when the product detects abnormal conditions. By outputting
a fault signal to the microprocessor unit (MPU), it is possible to shut down and prevent destruction
of the system.
<Compact package>
•This product uses aluminum insulated metal substrate (IMS) and has excellent heat dissipation.
•The pitch between control terminals is 2.54mm.
•The pitch between power terminals is 10mm.

MT6M15234 c
2. Product Lineup and TargetApplication
© Fuji Electric Co., Ltd. All rights reserved. 1-5
Type Name IGBT Rating Isolation Voltage [Vrms] Variation *1
Voltage
[V] Current [A]
6MBP50XTA065-50
650
50
2500Vrms
Sinusoidal 60Hz, 1min.
(Between all shorted terminals and IMS)
LT
6MBP50XTC065-50 LT
OH
6MBP75XTA065-50 75
LT
6MBP75XTC065-50 LT
OH
Table 1-1 Lineup
*1 (LT): Temperature sensor output function
(OH): Overheating protection function

MT6M15234 c
3. Definition of Type Name
© Fuji Electric Co., Ltd. All rights reserved. 1-6
•Type Name
6 MBP 50 X T C 065 –50
Additional model number (Option)
50 : RoHS
Voltage rating
065 : 650V
Additional series code
A : Temperature sensor output
C : Temperature sensor output and Overheat protection
Series name
T: Package type
Series name
X: Chip generation
IGBT current rating
50:50A, 75:75A
Indicates IGBT-IPM
Number of switching elements
6 : 6 switching elements
Fig. 1-3 Definition of Type

MT6M15234 c
4. Marking Specification
© Fuji Electric Co., Ltd. All rights reserved. 1-7
Fig. 1-4 Marking specification
TYPE NAME PRODUCT CODE
A1A2
6MBP50XTA065-50 A A
6MBP50XTC065-50 A C
6MBP75XTA065-50 B A
6MBP75XTC065-50 B C
Table 1-2 Products code

MT6M15234 c
5. Package Outline Dimension
1-8
© Fuji Electric Co., Ltd. All rights reserved.
Fig. 1-5 Case outline drawing
Unit:mm
DETAIL A DETAIL B
Note.1
The IMS (Insulated Metal Substrate) is deliberately protruded to improve the thermal conductivity
between IMS and heat-sink.
Note.2
Thickness from the package surface to the back side including the IMS.

MT6M15234 c
6. Absolute Maximum Ratings
1-9
© Fuji Electric Co., Ltd. All rights reserved.
Item Symbol Rating Unit Description
DC Bus Voltage VDC (terminal) 450 VDC voltage that can be applied between
P-N(U), N(V), N(W) terminals. Please refer
to Fig. 1-5 for details.
Bus Voltage (Surge) VDC(Surge, terminal) 500 V
Peak value of the surge voltage that can
be applied between P-N(U),N(V),N(W)
terminals during switching operation.
Please refer to Fig. 1-5 for details.
Collector-Emitter Voltage VCE(chip) 650 VMaximum collector-emitter voltage of IGBT
and repeated peak reverse voltage of
FWD. Please refer to Fig. 1-5 for details.
Collector Current IC50 AMaximum collector current of IGBT at
Tc=25oC, Tvj=150oC*2
Peak Collector Current ICP 100 AMaximum pulse collector current of IGBT
at Tc=25oC, Tvj=150oC*2
Forward Current IF50 AMaximum forward current of FWD at
Tc=25oC, Tvj=150oC*2
Peak Forward Current IFP 100 AMaximum pulse forward current of FWD at
Tc=25oC, Tvj=150oC*2
Collector Power
Dissipation PD_IGBT 132 WMaximum power dissipation per IGBT at Tc=25oC, Tvj=150oC*2
FWD Power Dissipation PD_FWD 89 WMaximum power dissipation per FWD at
Tc=25oC, Tvj=150oC*2
Self Protection DC Bus
Voltage (arm short-circuit) VDC(sc) 400 V
Maximum DC voltage at which IGBT can
be safely shut off by the IPM’s protection
function during short-circuit or overcurrent.
Please refer to Fig. 1-5 for details.
Maximum Virtual Junction
Temperature of Inverter
Block Tvj 175 oCMaximum virtual junction temperature of
IGBT and FWD*3
Operating Virtual Junction
Temperature of Inverter
Block Tvjop -40 ~ +150 oCVirtual Junction Temperature of IGBT and
FWD during continuous operation *3
Table 1-3 Inverter Block Absolute Maximum Ratings at Tvj=25oC, Tc=25oC, VCC*1=15V, VB(*)=15V
(unless otherwise specified)
An example of the absolute maximum ratings of 6MBP50XTA065-50 is shown in Table 1-3
and Table 1-4.
*1 VCC is applied between VCCH(U,V,W)-COM and VCCL-COM terminals.
*2 Pulse width and duty are limited by Tvj.
*3 The maximum virtual junction temperature during continuous operation is Tvj=150oC.
Continuous operation at over Tvj=150oC may result in degradation of product lifetime such as
power cycling capability with respect to the designed lifetime.

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 1-10
Item Symbol Rating Unit Description
High-side Supply Voltage VCCH(U)
VCCH(V)
VCCH(W)
-0.5 ~ 20 V Voltage that can be applied between
VCCH(U) - COM, VCCH(V) - COM,
VCCH(W) - COM terminals.
Low-side Supply Voltage VCCL -0.5 ~ 20 V Voltage that can be applied between
VCCL-COM terminals.
High-side Bias Absolute
Voltage
VVB(U)-COM
VVB(V)-COM
VVB(W)-COM
-0.5 ~ 670 V Voltage that can be applied between
VB(U)-COM, VB(V)-COM, VB(W)-COM
terminals.
High-side Bias Voltage for
IGBT Gate Driving
VB(U)
VB(V)
VB(W)
-0.5 ~ 20 V Voltage that can be applied between
VB(U)-VS(U), VB(V)-VS(V), VB(W)-VS(W)
terminals.
High-side Bias Offset
Voltage
VU
VV
VW
-5 ~ 650 V Voltage that can be applied between U-
COM, V-COM, W-COM terminals.*4
Input Signal Voltage VIN -0.5 ~ VCCH+0.5
-0.5 ~ VCCL+0.5 V
Voltage that can be applied between
IN(HU)-COM, IN(HV)-COM, IN(HW)-COM,
IN(LU)-COM, IN(LV)-COM, IN(LW)-COM
terminals.
Input Signal Current IIN 3mA Maximum current between IN(HU)-COM,
IN(HV)-COM, IN(HW)-COM, IN(LU)-COM,
IN(LV)-COM, IN(LW)-COM terminals.
Fault Signal Voltage VFO -0.5 ~ VCCL+0.5 V Voltage that can be applied between VFO-
COM terminals.
Fault Signal Current IFO 1mA Maximum sink current between VFO-COM
terminals.
Table 1-4 Control Circuit Block Absolute Maximum Ratings at Tvj=25oC, Tc=25oC,VCC *1=15V,
VB(*)=15V (continued)
(Continued on next page.)
*4 Apply 13.0V or more between VB(U)-U, VB(V)-V, VB(W)-W terminals.
The product might malfunction if the high-side bias offset voltage is less than -5V.

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 1-11
Item Symbol Rating Unit Description
CFO Signal Voltage VCFO -0.5 ~ 5.0 V Voltage that can be applied between CFO-
COM terminals.*5
CFO Signal Current ICFO -0.05 / 3 mA Maximum source / sink current between
CFO-COM terminals.*5
Over Current Sensing
Input Voltage VIS -0.5 ~ VCCL+0.5 V Voltage that can be applied between IS- COM terminals.
TEMP Signal Voltage VTEMP -0.5 ~ 5.0 V Voltage that can be applied between
TEMP-COM terminals.
TEMP Signal Current ITEMP -0.05 / 3 mA Maximum source / sink current between
TEMP-COM terminals.
VSC Signal Voltage VVSC -0.5 ~ VCCL+0.5 V Voltage that can be applied between VSC-
COM terminals.*6
VSC Signal Current IVSC -20 mA Maximum source current between VSC-
COM terminals.*6
Virtual Junction
Temperature of Control
Circuit Block Tvj 150 oCMaximum virtual junction temperature of
the control circuit.
Operating Case
Temperature Tc-40 ~ +125 oCOperating case temperature (temperature
of IMS directly under the IGBT or FWD
chip).
Storage Temperature Tstg -40 ~ +125 oCAmbient temperature range for storage
and transportation (no load condition).
Isolation Voltage Visol AC 2500 Vrm
sMaximum voltage between IMS and all
shorted terminals (Sine wave 60Hz, 1min)
*5 CFO is output terminal. Do not apply voltage or current. Connect only the specified capacitor
between CFO-COM terminals.
*6 VSC is output terminal. Do not apply voltage or current. Connect only the specified resistor between
VSC-COM terminals.
Table 1-4 Control Circuit Block Absolute Maximum Ratings at Tvj=25oC, Tc=25oC,VCC *1=15V,
VB(*)=15V (continued)

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 1-12
<Absolute Maximum Rating of Collector-Emitter Voltage>
The absolute maximum rating of collector-emitter voltage of the IGBT is specified below. During
operation, the voltage between P-N(U, V, W) is usually applied to high-side or low-side of one phase.
Therefore, the voltage between P-N(U, V, W) must not exceed the absolute maximum rating of IGBT.
The collector-emitter voltage absolute maximum rating is described below.
•Fig.1-5 shows the waveforms during short-circuit, IGBT turn-off and FWD reverse recovery.
Since VDC(Surge, terminal) is different in each situation, it is necessary to set VDC(terminal) considering
these situations.
•VCE(chip) is the collector-emitter voltage absolute maximum rating of the IGBT chip. VDC(Surge, terminal) is
specified considering the margin of surge voltage generated by the wiring inductance inside the
Product.
•VDC(terminal) is specified considering the margin of surge voltage generated by the wiring inductance
between P-N(*) terminals and electrolytic capacitor.
V
CE(chip):
Breakdown
voltage of IGBT and FWD chip. Because it is difficult to
measure
directly,
please use the product with VDC(terminal), VDC(Surge,terminal) within the
absolute
maximum
rating.
V
DC(terminal):
DC
bus voltage (between P-N(U, V, W) terminals)
V
DC(Surge, terminal)
:
DC
bus voltage at P-N(U, V, W) terminals including surge voltage
generated
during
switching.
(c) During short-circuit
Fig.1-6 Waveforms and Collector-Emitter voltage during IGBT turn-off, FWD reverse recovery, and
short-circuit
(b) During FWD reverse recovery
(a) During IGBT turn-offCollector-emitter voltage
IC
0
0
VDC(terminal)
VDC(Surge,terminal)
VCE(chip)
IF
0
VDC(Surge,terminal)
VCE(chip)
VDC(terminal)
短絡電流
0
VDC(Surge,terminal)
VDC(sc)
VP-N(U, V, W)

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved.
Chapter 2Description of Terminal Symbols and Terminology
2-1
1.
Description of Terminal Symbols
2
-2
2.
Description of Terminology
2
-3

MT6M15234 c
1. Description of Terminal Symbols
Table 2-1 and Table 2-2 describe the
terminal symbols and terminology,
respectively.
© Fuji Electric Co., Ltd. All rights reserved. 2-2
Terminal
No. Terminal Name Terminal Description Terminal No. Terminal Name Terminal Description
2IN(HU) Signal Input for High-side U-
phase 24 COM Low-side Control Power Supply GND
3VCCH(U) High-side Control Power
Supply for U-phase 25 TEMP Temperature Sensor Output
5VB(U) High-side Bias Voltage for
U-phase 26 IS Overcurrent Sensing Voltage Input
6VS(U) High-side Bias Voltage for
U-phase GND 27 CFO Fault Output Pulse Width Setting
8IN(HV) Signal Input for High-side V-
phase 28 VFO Fault Output
9VCCH(V) High-side Control Power
Supply for V-phase 29 IN(LU) Signal Input for Low-side U- phase
11 VB(V) High-side Bias Voltage for
V-phase 30 IN(LV) Signal Input for Low-side V- phase
12 VS(V) High-side Bias Voltage for
V-phase GND 31 IN(LW) Signal Input for Low-side W- phase
14 IN(HW) Signal Input for High-side W-
phase 32 N(W) Negative Bus Voltage Input for W-phase
15 VCCH(W) High-side Control Power
Supply for W-phase 33 N(V) Negative Bus Voltage Input for V-phase
16 COM High-side Control Power
Supply GND 34 N(U) Negative Bus Voltage Input for U-phase
18 VB(W) High-side Bias Voltage for
W-phase 35 W W-phase Output
19 VS(W) High-side Bias Voltage for
W-phase GND 36 V V-phase Output
21 VSC Low-side Sense Current
Detection 37 U U-phase Output
23 VCCL Low-side Control Power
Supply 38 P Positive Bus Voltage Input
Table 2-1 Description of terminal symbols Fig.2-1 Terminals number

MT6M15234 c
2. Description of Terminology
© Fuji Electric Co., Ltd. All rights reserved. 2-3
Item Symbol Description
Zero Gate Voltage
Collector Current ICE Leakage current when a specified voltage is applied between the collector and emitter of an IGBT with all input signals L (= 0V).
Collector-Emitter
Saturation Voltage VCE(sat)
(terminal)
Collector-emitter voltage at a specified collector current when only
the input signal of the element under measurement is H(= 5V) and
the inputs of all other elements are L (= 0V).
Forward Voltage VFForward voltage at a specified forward current with all input signals
L(= 0V).
Turn-on Time ton
The time from when the input signal voltage level exceeds the
threshold value until the collector current rises to 90%of the rated
current. See Fig. 2-2 for details.
Turn-on Delay Time td(on)
The time from when the input signal voltage level exceeds the
threshold value until the collector current rises to 10%of the rated
current. See Fig. 2-2 for details.
Turn-on Rise Time trThe time for the collector current to rise from 10%to 90%of the
rated current when the IGBT is turned on. See Fig. 2-2 for details.
VCE-ICCross Time of
Turn-on tc(on)
The time from when the collector current reaches 10%of the rated
current until the VCE voltage fall to 10%of the rated voltage when
the IGBT is turned on. See Fig. 2-2 for details.
Turn-off Time toff
The time from when the input signal voltage level falls below the
threshold value until the collector current falls to 10%of the rated
current. See Fig. 2-2 for details.
Turn-off Delay Time td(off)
The time from when the input signal voltage level falls below the
threshold value until the collector current falls to 90%of the rated
current. See Fig. 2-2 for details.
Turn-off Fall Time tfThe time for the collector current to fall from 90%to 10%of the
rated current when the IGBT is turned off. See Fig. 2-2 for details.
VCE-ICCross Time of
Turn-off tc(off)
The time from when the VCE voltage reaches 10%of the rated
voltage until the collector current fall to 10%of the rated current
when the IGBT is turned off. See Fig. 2-2 for details.
Reverse Recovery Time trr The time required to reduce the reverse recovery current of FWD
to zero. See Fig. 2-2 for details.
Table 2-2 Description of terminology (Inverter Block)
Table 2-3 Description of terminology (Control Circuit Block)
Item Symbol Description
Circuit Current of
Low-side ICCL Consumption current between VCCL and COM.
Circuit Current of
High-side ICCH Consumption current between VCCH(U, V, W) and COM (for each phase).
Circuit current of
Bootstrap circuit ICCHB Consumption current between VB(U)-VS(U), VB(V)-VS(V), and VB(W)-VS(W) (for each phase).
Input Signal Threshold
Voltage Vth(on) Input signal threshold voltage that turns on the IGBT.*1
Vth(off) Input signal threshold voltage that turns off the IGBT.*1

MT6M15234 c © Fuji Electric Co., Ltd. All rights reserved. 2-4
Item Symbol Description
Input Signal Threshold
Voltage Vth(on) Input signal threshold voltage that turns on the IGBT.*1
Vth(off) Input signal threshold voltage that turns off the IGBT.*1
Input Signal Threshold
Hysteresis Voltage Vth(hys) Hysteresis voltage between Vth(on) and Vth(off).*1
Operational Input Pulse
Width of Turn-on tIN(on) Control signal pulse width required to turn-on the IGBT. Refer to Chapter 3.4 for details.
Operational Input Pulse
Width of Turn-off tIN(off) Control signal pulse width required to turn-off the IGBT. Refer to Chapter 3.4 for details.
Input Current IIN Current flowing between IN(HU,HV,HW,LU,LV,LW) and COM.
Input Pull-down
Resistance RIN Resistance of built-in resistor between IN(HU,HV,HW,LU,LV,LW) and COM. (for each phase).
Fault Output Voltage VFO(H) VFO output voltage during normal operation (low-side protection
function is not activated). External pull-up resistor = 10kΩ.
VFO(L) VFO output voltage when low-side protection function is activated.
Fault Output Pulse Width tFO The period during which VFO continues to output after low-side
protection function is activated. Refer to Chapter 3.6 for details.
Overcurrent Protection
Voltage Level VIS(ref) Overcurrent protection threshold voltage of IS. Refer to Chapter 3.5 for details.
Overcurrent Protection
Delay Time td (IS) The time from overcurrent condition is detected until the collector current falls below 50%of rating. Refer to Chapter 3.5 for details.
Overcurrent Trip Level Ioc
The current value that can be detected when a specified sense
resistor Rsc is connected between VSC and COM without
connecting external shunt resistors to N(U), N(V), and N(W).
Output Voltage of
Temperature Sensor V(temp) TEMP output voltage. Applied to temperature sensor output model. Refer to Fig. 2-3 and Chapter 3.7 for details.
Pull down Resistance of
TEMP terminal R(temp) Resistance value at which the temperature characteristic of TEMP output voltage becomes linear below room temperature.
Overheating Protection
Temperature TOH
Tripping temperature of overheating protection by LVIC. All low-side
IGBTs are shut down when the temperature exceeds this threshold.
Refer to Figure 2-3 and Chapter 3.8 for details.
TOH Hysteresis TOH(hys)
Hysteresis temperature that does not reset the protection status
during overheating protection. Refer to Figure 2-3 and Chapter 3.8
for details. TOH and TOH(hys) are applied to overheating protection
model.
VCC Under Voltage Trip
Level of Low-side VCCL(OFF)
Tripping voltage of under voltage protection of low-side control
power supply. When VCCL falls below the threshold voltage, all low-
side IGBTs are shut down. Refer to Chapter 3.1 for details.
VCC Under Voltage Reset
Level of Low-side VCCL(ON) Reset voltage that resets the under voltage protection of low-side control power supply. Refer to Chapter 3.1 for details.
VCC Under Voltage
Hysteresis of Low-side VCCL(hys) Hysteresis voltage between VCCL(OFF) and VCCL(ON),
Table 2-3 Description of terminology (Control Circuit Block) (Continued)
*1 If the pulse width of the input signal is less than tIN(on) or tIN(off),the product might make incorrect
response.