DIMENSIONS
Dimensions in mm, (inc) (*) See installation notes
*Apply thermoconductive
paste Raise the guard to access the
fastening hole or the terminals
Current drop at nominal voltage and frequencies:
≤8mArms
I2t for fusing t=1-10ms: ≤200A2s
Critical dl/dt: ≥100A/µs
Voltage drop at nominal current: ≤1,45Vrms
Critical dV/dt off-state: ≥1000V/µs
Ith = 15A
GQ - 25 -
Nominal current :
AC51: 25Arms; AC53A (*): 5Arms
Min load current: 0,3Arms
Repetitive overcurrent t=1 s: ≤60Arms
Non-repetitive overcurrent t=20ms: 300Ap
Current drop at nominal voltage and frequencies:
≤8 mArms
I2t for fusing t=1-10ms: ≤450A2s
Critical dl/dt: ≥100A/µs
Voltage drop at nominal current: ≤1,45Vrms
Critical dV/dt off-state:≥1000V/µs
Ith = 25A
GQ - 50 -
Nominal current :
AC51: 50Arms; AC53A (*): 15Arms
Min load current: 0,3Arms
Repetitive overcurrent t=1 s: ≤125Arms
Non-repetitive overcurrent t=20ms: 600Ap
Current drop at nominal voltage and frequencies:
≤8mArms
I2t for fusing t=1-10ms: ≤1800A2s
Critical dl/dt: ≥100A/µs
Voltage drop at nominal current: ≤1,35Vrms
Critical dV/dt off-state: ≥1000V/µs
Ith = 50A
GQ - 50B -
(with high I2t fusing current)
Nominal current :
AC51: 50Arms; AC53A (*):18Arms
Min load current: 0,4Arms
Repetitive overcurrent t=1 s: ≤140Arms
Non-repetitive overcurrent t=20ms: 1150Ap
Current drop at nominal voltage and frequencies:
≤10mArms
I2t for fusing t=1-10ms: ≤6600A2s
Critical dl/dt: ≥100A/µs
Voltage drop at nominal current: ≤1,2Vrms
Critical dV/dt off-state: ≥1000V/µs
Ith = 50A
GQ - 90 -
Nominal current
AC51: 90Arms; AC53A (*): 20Arms
Min load current: 0,5Arms
Repetitive overcurrent t=1 s: ≤150Arms
Non-repetitive overcurrent t=20ms: 1500Ap
Current drop at nominal voltage and frequencies:
≤10mArms
I2t for fusing t=1-10ms: ≤11200A2s
Critical dl/dt: ≥100A/µs
Voltage drop at nominal current:≤1,35Vrms
Critical dV/dt off-state: ≥1000V/µs
Ith = 90A
(*) Only versions: GQ-XX-24-X-1
GQ-XX-48-X-1
Insulation
Nominal insulation voltage
Input/output:: ≥4000 Vac
Nominal insulation voltage
Output/case: ≥2500 Vac
Insulation resistance
Input/output: ≥1010Ω
Insulation resistance
Output/case: ≥1010Ω
Insulation capacity Input/Output: ≤8pF
Insulation capacity Output/case: ≤100pF
Ambient conditions
• Ambient temeparure: -25...+80°C
• Storage Temperature: -55...+100°C
• Maximum relative humidity: 50% a 40°C
• Maximum installation height: 2000 slm
• Pollution level: 3
Thermal features
GQ - XX -
Junction Temperature: ≤125°C
Rth junction/ambient: ≤12 K/W
GQ - 15 - / GQ - 25 -
Rth junction/case: ≤1,25 K/W
GQ - 50 -
Rth junction/case: ≤0,65 K/W
GQ - 50B -
Rth junction/case: ≤0,33 K/W
GQ - 90 -
Rth junction/case: ≤0,3 K/W
Solid State Relay Dissipated Power
Calculation
Single phase state relay
Pd GQ .. 15/25 = 1,45 . Irms [W]
Pd GQ .. 50/90 = 1,35 . Irms [W]
Pd GQ .. 50B = 1,2 . Irms [W]
IRMS = single-phase load current
Heatsink Thermal Resistance Calculation
Rth = (90°C - T.amb. max) / Pd
where Pd = dissipated power
Max. amb. T = max air temperature inside the
electrical cabinet.
Use a heatsink with thermal resistance inferior
