Panasonic MA3S132D User manual

Switching Diodes
1
Publication date: March 2004 SKF00024BED
Note) *:t=1 s
MA3S132D (MA132WA), MA3S132E (MA132WK)
Silicon epitaxial planar type
For switching circuits
■Features
•Short reverse recovery time trr
•Small terminal capacitance Ct
•Two isolated elements contained in one package, allowing high-
density mounting
■Absolute Maximum Ratings Ta=25°C
Unit: mm
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage VFIF=100 mA 1.2 V
Reverse voltage VRIR=100 µA80V
Reverse current IRVR=75 V 100 nA
Terminal capacitance MA3S132D CtVR=0 V, f =1 MHz 15 pF
MA3S132E 2
Reverse recovery time * MA3S132D trr IF=10 mA, VR=6 V 10 ns
MA3S132E Irr =0.1 IR , RL=100 Ω3
■Electrical Characteristics Ta=25°C ±3°C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs= 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri= 50 Ω
tp= 2 µs
tr= 0.35 ns
δ = 0.05
IF= 10 mA
VR= 6 V
RL= 100 Ω
10%
Input Pulse Output Pulse
Irr = 0.1 IR
trtp
trr
VR
IF
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Note) The part numbers in the parenthesis show conventional part number.
Marking Symbol:
•MA3S132D: MO •MA3S132E: MU
Internal Connection
12
3
1
3
2
Parameter Symbol Rating Unit
Reverse voltage VR80 V
Maximum peak reverse voltage VRM 80 V
Forward current Single IF100 mA
Double 150
Peak forward Single IFM 225 mA
current Double 340
Non-repetitive peak
Single IFSM 500 mA
forward surge current
*Double 750
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
EIAJ: SC-81
SSMini3-F2 Package
MA3S132D MA3S132E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode Cathode
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60+0.05
–0.03
0.12+0.05
–0.02
0.60+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3˚
(0.44)(0.44)
0.88
(0.375)
+0.05 –0.03
0.80±0.05
(0.80)
1.60±0.05
3˚
DE
This product complies with the RoHS Directive (EU 2002/95/EC).

2
MA3S132D, MA3S132E
SKF00024BED
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
Characteristics charts of MA3S132D
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a = 150°C
100°C
25°C
−20°C
10 −1
0 20 40 60 80 100 120
1
10
10
2
10
3
10
4
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
T
a = 150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 100 mA
10 mA
3 mA
10 −1
−40 0 40 80 120 160 200
1
10
10
2
10
3
10
4
Ambient temperature Ta(°C)
Reverse current IR(nA)
V
R = 75 V
35 V
6 V
0
2
4
6
8
0 20 40 60 80 100 120
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f = 1 MHz
Ta= 25°C
10 −1
1
10
102
103
10110 −1
Pulse width tW(ms)
Forward surge current IF(surge) (A)
tW
Non repetitive
IF(surge)
Ta= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

MA3S132D, MA3S132E
3
SKF00024BED
Characteristics charts of MA3S132E
IFVFIRVRVFTa
IRTaCtVRIF(surge) tW
10 −2
0 0.2 0.4 0.6 0.8 1.0 1.2
10
−1
1
10
10
2
10
3
Forward voltage V
F
(V)
Forward current I
F
(mA)
T
a
= 150°C
100°C
25°C
−20°C
1
0 20 40 60 80 100 120
10
10
2
10
3
10
4
10
5
Reverse voltage V
R
(V)
Reverse current I
R
(nA)
T
a = 150°C
100°C
25°C
0
0.4
0.8
1.2
1.6
−40 0 40 80 120 160 200
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
I
F = 100 mA
10 mA
3 mA
1
−40 0 40 80 120 160 200
10
10
2
10
3
10
4
10
5
Ambient temperature T
a
(°C)
Reverse current I
R
(nA)
V
R = 75 V
35 V
6 V
0
1.2
1.0
0.8
0.6
0.4
0.2
0 20 40 60 80 100 120
Reverse voltage VR(V)
Terminal capacitance Ct(pF)
f = 1 MHz
Ta= 25°C
10
−1
1
10
10
2
10
3
10110
−1
Pulse width t
W
(ms)
Forward surge current I
F(surge)
(A)
t
W
Non repetitive
I
F(surge)
T
a
= 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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