ST TIP122FP User manual

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TIP122FP
TIP127FP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicroelectronics PREFERRED
SALESTYPES
■FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The TIP122FP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-220FP fully
molded isolated package. It is intented for use in
power linear and switching applications.
The complementary PNP type is TIP127FP.
INTERNAL SCHEMATIC DIAGRAM
March 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP122FP
PNP TIP127FP
VCBO Collector-Base Voltage (IE= 0) 100 V
VCEO Collector-Emitter Voltage (IB= 0) 100 V
VEBO Emitter-Base Voltage (IC= 0) 5 V
ICCollector Current 5 A
ICM Collector Peak Current (tp< 5 ms) 8 A
IBBase Current 0.1 A
Ptot Total Dissipation at Tcase ≤ 25 oC
Tamb ≤ 25 oC29
2W W
Visol Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink 1500 V
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and current values are negative.
123
TO-220FP
R1Typ. = 5 KΩR2Typ. = 150 Ω
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 4.3 62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB= 0) VCE = 50 V 0.5 mA
ICBO Collector Cut-off
Current (IE= 0) VCB = 100 V 0.2 mA
IEBO Emitter Cut-off Current
(IC= 0) VEB = 5 V 2 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB= 0)
IC= 30 mA 100 V
VCE(sat)* Collector-Emitter
Saturation Voltage IC= 3 A IB= 12 mA IC= 5 A IB= 20 mA 2
4V V
VBE(on)* Base-Emitter Voltage IC= 3 A VCE = 3 V 2.5 V
hFE* DC Current Gain IC= 0.5 A VCE = 3 V
IC= 3 A VCE = 3 V 1000
1000
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
Safe Operating Area Derating Curve
TIP122FP / TIP127FP
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DC Current Gain (NPN type)
Collector Emitter Saturation Voltage (NPN type)
Base Emitter Saturation Voltage (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (PNP type)
Base Emitter Saturation Voltage (PNP type)
TIP122FP / TIP127FP
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Base Emitter On Voltage (NPN type)
Freewheel Diode Forward Voltage (NPN type)
Base Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type) Switching Time resistive Load (PNP type)
TIP122FP / TIP127FP
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
TIP122FP / TIP127FP
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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TIP122FP / TIP127FP
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