Oxford Instruments OpAL User guide

OpAL
OpenLoadAtomicLayerDepositionSystem
SystemManual
Works Order No.: 94-417919
Customer: Università di Pisa
Typical
OpAL system
WARNING
THIS SYSTEM INCORPORATES POTENTIALLY DANGEROUS COMPONENTS, WHICH CAN EXPOSE
PERSONNEL TO HAZARDS RESULTING IN DEATH OR SERIOUS INJURY.
BEFORE ATTEMPTING TO INSTALL, POWER UP OR OPERATE THIS SYSTEM, ENSURE YOU HAVE
READ AND UNDERSTOOD THE ENCLOSED SYSTEM MANUAL, ESPECIALLY SECTION 1 (HEALTH
AND SAFETY).
Issue 1: July 2010

OpAL
OpenLoadAtomicLayerDepositionSystem
SystemManual
Works Order No.: 94-417919
Customer:
Università di Pisa
Volume 1: Operation and Maintenance Manual
This manual, Volume 1, is one of a series for the machine as follows:
Volume 1 Operation and Maintenance Manual
Volume 2 System Drawings
Volume 3 OEM Manuals
Notes:
1. Please regard this manual as part of the system.
2. Ensure that any amendment received is incorporated in the text.
Oxford Instruments Plasma Technology
Yatton, Bristol, BS49 4AP
Tel: [phone]
Fax: [phone]
Issue 1: July 2010

OpAL OxfordInstrumentsPlasmaTechnology System Manual
Contents
Printed: 14 July 2010 08:52 Page (iii) Issue 1: July 2010
Contents
Title and inside front cover pages
Contents List.................................................................................................................(iii)
Preface..........................................................................................................................(iv)
Customer Support Facilities...........................................................................................(iv)
System Identification ......................................................................................................(v)
Quality Control Forms ...................................................................................................(vi)
Goods Return Form QCF 60
Certificate of Pre-Acceptance and Certificate of Acceptance QCF 61
System Readiness Form QCF 89
Declaration of Conformity QCF 185d
ASM Patent Rights
1. Health and Safety .................................................................................................. 1-1
2. Services (OpAL) ..................................................................................................... 2-1
3. Description ........................................................................................................... 3-1
4. Installation............................................................................................................ 4-1
5. Operating Instructions ......................................................................................... 5-1
6. Maintenance ......................................................................................................... 6-1
7. Troubleshooting ................................................................................................... 7-1
8. Process Guide and Glossary................................................................................... 8-1
9. Uninstallation and disposal ................................................................................... 9-1
Appendix A Measurement of radio frequency and microwave emissions
Appendix B Operation and maintenance of turbomolecular pumps
Appendix IDS Installation Data Sheets (OpAL)
Appendix PSP Precursor Source Pot
Appendix R Rotameter data
Appendix S Services Specifications for Plasmalab and Ionfab Systems
OIPT Automatch Unit Equipment Manual
Ozone Delivery System Equipment Manual

OpAL OxfordInstrumentsPlasmaTechnology System Manual
Preface
This manual is the OPERATION and MAINTENANCE MANUAL. It provides all the
information necessary for the operation and routine maintenance of the system. Certain
components within the system are supplied by other manufacturers. These components
have their separate manuals which are included, and should be referred to for detailed
operation, maintenance and repair information.
WARNING
SERVICE BY
QUALIFIED STAFF
ONLY
Refer to manual
Where this label is displayed (black text on a yellow
background), read the relevant manual before proceeding
to operate or maintain the labelled equipment.
CustomerSupportFacilities
Oxford Instruments Plasma Technology has global Customer Support Facilities to provide
a co-ordinated response to customer’s queries. All queries are recorded on our Support
Database and dealt with as quickly as possible. If we are not able to answer the query
immediately, we will contact you as soon as possible.
Before contacting a Customer Support Facility, please ensure that you have referred to the
appropriate section of your system manual, OEM manuals and electrical drawings.
Please direct all queries through your nearest support facility (see below) and have the
following details available.
System Type, e.g. OpAL etc.
Works Order No. – This can be found on the front cover of your system manual.
Contact Information – Your name, Company and how we can contact you.
Details of your query – nature of the problem, part numbers of spares required, etc.
You can contact us via any of the following:
China
Beijing
Tel: [phone]
Email: [email protected]
Shanghai
Tel: [phone]
Email: [email protected]
Germany
Tel: [phone]
Email: [email protected]
Japan
Tel: [phone]
Email: [email protected]
Singapore
Tel: [phone]
Email: [email protected]
Taiwan
Tel: [phone]
Email: [email protected]
UK
Customer Support Hotline: [phone]
(0800 – 2000 UK local time)
Fax: [phone]
Email: [email protected]
USA
Oxford Instruments Inc.
300 Baker Avenue, Suite 150
Concord, MA 01742
Phone: [phone]
Toll Free: [phone]
Fax: [phone]
Email: [email protected]
Preface
Printed: 14 July 2010 08:52 Page (iv) Issue 1: July 2010

OpAL OxfordInstrumentsPlasmaTechnology System Manual
SystemIdentification
This system, Works Order No. for Customer: ,is identified
by a label attached to the rear of the power box. An image of this label is shown below:
94-417919 Università di Pisa
NOTE: Refer to the label attached to the system power box for the measured maximum
rated input current value.
QualityControlforms
The following Quality Control Forms (QCF) are attached:
Goods Return Form QCF 60 – To be completed and attached to the outside of the
package of any returned parts.
Certificate of Pre-Acceptance and Certificate of Acceptance QCF 61 – To be completed
and returned if the customer is absent from acceptance.
System Readiness Form QCF 89 – To be completed and returned prior to the
commissioning visit.
Declaration of Conformity QCF 185d - CE Certificate.
Preface
Printed: 14 July 2010 08:52 Page (v) Issue 1: July 2010

QCF 60 Issue 5 15/06/07
Environmental Agency Producer
Registration Number for WEEE:
WEE/AE0116XU
Returns No :
GOODSRETURNFORM
• This form must be completed and a copy sent to Oxford Plasma Technology Service Department by fax or
mail before return of any goods to the factory. (Fax No : + 44 (0) 1934 837071)
• If return to the factory is approved a Returns Authorisation Number will be issued. This should be written in the box
provided on this form and the completed form returned with the goods as part of the shipping documentation. It
must be possible to read this form without opening the packaging containing the goods, therefore the
form should not be enclosed within the packaging but affixed to the container.
• Once the Returns Authorisation Number is issued goods should be returned within one month.
OIPT reserve the right to invoice the full value of parts if not returned.
• All sections below must be completed. If any section does not apply, mark that section "not
applicable". If the information requested is not known, mark that section "not known".
• Any goods returned to the factory without a copy of this form carrying a Returns Authorisation Number
will be considered hazardous and may be disposed of at the sender's expense. Mark the returns number
on all packages and supporting shipping documentation.
Equipment description. Serial number or identifying marking
Original OIPT order No :
Date of order :
Reason for return of part/s.
Description of fault/s.
Chemical names of all materials which have come into
contact with the goods.
Precautions which must be taken when handling these
materials.
Nature of hazard(s) presented by contact with these
materials.
Action to be taken in the event of human contact or
spillage of these materials.
Details of any decontamination carried out prior to
shipping
.
Levels of residual substances left in or on the returned
goods.
Name and address of person to be contacted in case of
query.
Tel No : Ext :
Fax No :
Declaration
Please strike through the section a) or b) which does not apply and sign the declaration.
a) I hereby confirm that the equipment detailed above has not come into contact with any hazardous substance
and has been drained of any lubricant.
b) I hereby confirm that the only hazardous materials to which the equipment detailed above has been exposed
are listed above and that the following precautions have been taken.
1. The equipment has been drained of any lubricant
2. All ports have been sealed and the equipment has been securely packed and labelled in accordance with
Oxford Instruments Plasma Technology recommendations (available on request)
3. The carrier has been informed of the nature of the consignment.
Signed. . . . . . . . . . . . . . . . . . . . . . . . . . . . Date. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Name . . . . . . . . . . . . . . . . . . . . . . . . . . . . Position. . . . . . . . . . . . . . . . . . . . . . . . . .

QCF 61 Issue 8
Date: 15/06/07
Oxford Instruments Plasma Technology
North End, Yatton Sheet 1/2
Bristol, BS49 4AP
England.
Telephone : [phone]
Fax: [phone]
E mail: [email protected]
Environmental Agency Registration Number for WEEE: WEE/AE0116XU
CERTIFICATEOF PRE-ACCEPTANCE
This form is to be completed in accordance with the guidelines stated in QCF 61a.
The above equipment has been examined / tested in my presence, at Oxford Plasma Technology. The
following list defines items that need to be actioned prior to final acceptance being given.
Brief description of the system:
Customer
Project number:
Equipment serial number/s:
Accepted by: Representative of the end user.
Signature: Date: / / 0
Witnessed by: Oxford Instruments Plasma Technology representative
Signature: Date: / / 0
OIPT circulation:
Service Manager
Design Manager

QCF 61 Issue 8
Date: 15/06/07
Oxford Instruments Plasma Technology Sheet 2/2
North End, Yatton
Bristol, BS49 4AP
England.
Telephone :[phone]
Fax: [phone]
E mail: [email protected]
Environmental Agency Registration Number for WEEE: WEE/AE0116XU
CERTIFICATEOFACCEPTANCE
Brief description of the system:
Pre-acceptance form completed at OIPT ? Yes / No
Customer:
Project number:
Equipment serial number/s:
The equipment supplied has been examined and tested as an assembled system in my presence,
and has given satisfactory results where shown. (Tick as appropriate)
Operational Process
I am satisfied with the results that this system has produced and I accept that the technical
specifications have been achieved.
Comments:-
Accepted by: Representative of the end user.
Signature: Date: / / 0
Please ask our representative for a copy of our Customer feedback form, in order that you may record
your opinions of the service given by Oxford Plasma Technology Ltd.
Witnessed by: Oxford Instruments Plasma Technology representative
Signature: Date: / / 0
OIPT circulation:
Service Manager
Design Manager

``
Environmental Agency Producers Registration Number for WEEE: WEE/AE0116XU
Page 9 of 13
QCF89 issue 8
09/11/07
This form is provided in order for us to record the level of wo
The system should be installed, within the parameters listed be
signifies that you have completed the insta
Installation Data Document (Appendix IDS in
documents.
Should this form be received, an engineer
the right to
SYSTEM READINESS FORM
rk that you have conducted, to support the installation of your new Oxford Instruments system.
low and the form returned to your supporting Oxford Instruments office. Returning this form
llation of the system, in accordance with the Services Specifications (Appendix S in this System Manual) the
this System Manual) and that the installation conforms with all of the requirements listed within these
dispatched to start commissioning and any of the facilities requirements not be met, Oxford Instruments reserves
terminate that commissioning visit and charge the customer for a return visit, once the facilities have been fully completed.
Company Name :
Company Contact Name:
System Serial
Number :
System Type:
Please tick appropriate box YES NO Detail
1. Has the system been sited ? Attach site plan if available.
2. Has the system been installed in a clean room ?
3. Are there any special requirements for gaining access into the clean room
? ie. clearance, training, citizenship etc.. If so please list below.
4. Have pumps been sited and the cables between each pump and system
power box been connected?
5. Has the gas pod been sited, connected to the system and connected in to
the appropriate gas delivery and exhaust extraction systems, in accordance
with local safety regulations?
6. If the system has a heater chiller, has this been sited, connected to the
lower electrode cooling circuit and filled with Hexid A40?
7. Has AC power been connected to the system? Measure the voltages
between each phase and neutral.
Phase 1 to
Neutral
Phase 2 to
Neutral
Phase 3 to
Neutral
8. Has compressed air been connected to the system? Inlet pressure must
be 6 Bar (90PSI). Note Pressure.
Compressed Air Inlet Pressure
9. Has cooling water been connected to the system? Differential pressure Inlet Water Outlet Water

``
Environmental Agency Producers Registration Number for WEEE: WEE/AE0116XU
Page 10 of 13
QCF89 issue 8
09/11/07
between inlet and outlet must be 3 - 4 Bar (45 – 60PSI). Water supply
should be connected to each inlet/outlet on the system in parallel and not
series. Note Inlet and Outlet Pressure.
Pressure Pressure
10. Has N2 vent been connected to the system? Inlet must be able to
maintain a pressure of 3 Bar (45psig). Note Pressure.
Vent Nitrogen Inlet Pressure
11. Has N2 purge been connected to the system? Inlet must be able to
maintain a pressure of 3 Bar (45psig). Note Pressure.
Purge Nitrogen Inlet Pressure
12. If the system is configured with cryogenic cooling, is an LN2 Dewar,
filled with LN2 available? Is the Dewar connected to the system via 3/8”
Swagelock connections and is the pipe work adequately insulated to prevent
a safety hazard?
Is the pipe work adequately
insulated to prevent a safety
hazard?
13. Have all of the gas pod connections been made to the appropriate gas
supply or system connection. Have they been leak checked?
14. All process gasses should be available for the system
commissioning. Please verify that each gas, as it is laid out
Name
of Gas
Inlet
Pressure
Heated? Leak
Rate
Name
of Gas
Inlet
Pressure
Heated? Leak
Rate

``
Environmental Agency Producers Registration Number for WEEE: WEE/AE0116XU
Page 11 of 13
QCF89 issue 8
09/11/07
Gas 1 Gas 7
Gas 2 Gas 8
Gas 3 Gas 9
Gas 4 Gas 10
Gas 5 Gas 11
in the gas pod is connected, available for process and that
the gas line has been leak checked.
Please record the leak rate for each gas line. If there is no
line fitted please enter N/A.
Process gas inlet pressure should be set at 3 Bar (45psig).
Minimum acceptable inlet pressure: 2 Bar (30psig).
Maximum acceptable inlet pressure: 5 Bar (75psig).
If the gas line is to be used for BCl3, SiCl4 or TEOS, has the
gas line been wrapped with trace heater wire and insulated?
Failure to do so could result in condensation of the gas,
within the line during processing. Gas 6 Gas 12
Yes No Detail
15. Have the rotary pump exhaust lines been connected to an
exhaust extraction system that meets all local safety
standards?
16. If the system is fitted with a cryo pump, which is used
for toxic gasses, has an action plan been discussed and
implemented for connection of the pump outlet connector?
17. Has the rotary pump purge been connected to the pumps
and nitrogen supply?
18. Have the rotary pumps been filled with oil of the correct
type for the pump in use?
19. Is the gas pod extraction connected with a minimum flow
rate of 1m3/hour (6 line gas pod) or 3 m3/hour (12 line gas
pod). Does the extraction system meet all local safety
regulations?
20. Do you believe that that demonstration of process has
been included in the purchase of your tool?

``
Environmental Agency Producers Registration Number for WEEE: WEE/AE0116XU
Page 12 of 13
QCF89 issue 8
09/11/07
20.a. Please state, which processes require to be
demonstrated.
20.b. Are the required samples and measurement
equipment available for the process work to follow on
from hardware acceptance?
Name : Position Within Company:
Signature: Date: / /0
Preferred Date for Commissioning Commencement: / /0

``
Environmental Agency Producers Registration Number for WEEE: WEE/AE0116XU
Page 13 of 13
QCF89 issue 8
09/11/07
Please return the completed form to
your nearest Oxford Instruments
Support Office, detailed below:
USA & Canada DE, NE, B, SE, FI,DK Eastern Territories U.K. and all Other Territories
Oxford Instruments America Inc Oxford Instruments GmbH Oxford Instruments Pte. Ltd Oxford Instruments Plasma
Technology
Plasma Technology Support
Manager
Plasma Technology Raymond Wong Global Support Manager
300 Baker Avenue, Suite 150 Postfach 4509 371 Beach Road North End
Concord 65035 Wiesbaden #02-07 Keypoint Yatton, Nr Bristol
MA 01742 Germany Singapore 199597 BS49 4AP. U.K.
Tel: [phone] Tel: [phone] Tel: [phone] Tel: [phone]
Fax: [phone] Fax: [phone] Fax: [phone] Fax: [phone]
Email: mailto:[email protected] Email: [email protected] Email: [email protected] Email: [email protected]

lé^i== lñÑçêÇ=fåëíêìãÉåíë=mä~ëã~=qÉÅÜåçäçÖó System Manual
=
^pj=m~íÉåí=oáÖÜíë=
=This product exploits technology that is licensed from ASM and is protected by patents.
A label is attached to the system base unit indicating that the ASM licence covers the system:
=
Details of the specific patent numbers are listed in the following 13 pages.
ASM Patent Rights
Printed: 09 October 2007 11:14 Issue 1: July 2007

281ASM Patents Licensed / Sub-Licensed to Oxford Instruments
Case Extension ApplicationNo FilingDate PublicationNo
P
ublication Dat
e
PatentNo Issue DateTitle Status Assgnee
g.002 KR Method for forming a metal film KR 1998/35911 01-Sep-1998 2000/18353 06-Apr-2000 332364 30-Mar-2002 ASMGIssued
g.004 EP Method for forming a three component
nitride film containing metal and silicon
EP 1999/941865 10-Sep-1999 1044288 18-Oct-2000 1044288 19-Mar-2003 ASMGPublished&
Gr
g.004 JP Method for forming a three component
nitride film containing metal and silicon
JP 1999/570818 10-Sep-1999 2002/525432 13-Aug-2002 ASMGPublished
g.004 US Method for forming a three component
nitride film containing metal and silicon
US 09/554443 10-Sep-1999 6426117 30-Jul-2002 ASMGIssued
g.004 WO Method for forming a three component
nitride film containing metal and silicon
WO PCT/KR98/4 10-Sep-1999 0016377 23-Mar-2003 ASMGPublished
g.009 EP Method of Forming a Thin Film EP 2000/915582 06-Apr-2000 1092233 18-Apr-2001 ASMGPublished
g.009 JP Method of Forming a Thin Film JP 2000/612991 06-Apr-2000 2003/521579 15-Jul-2003 ASMGPublished
g.009 KR Method of Forming a Thin Film KR 1999/11877 06-Apr-1999 2000/49298 05-Aug-2000 273473 15-Nov-2000 ASMGIssued
g.009 US Method of Forming a Thin Film US 09/719103 06-Apr-2000 6645574 11-Nov-2003 ASMGIssued
g.009 WO Method of Forming a Thin Film WO PCT/KR00/0 06-Apr-2000 0063957 26-Oct-2000 ASMGPublished
g.010 EP Chemical Deposition Reactor and Method
of Forming a Thin Film using the Same
EP 2000/940951 19-Jun-2000 1125321 22-Aug-2001 ASMGPublished
g.010 JP Chemical Deposition Reactor and Method
of Forming a Thin Film using the Same
JP 2000/505047 19-Jun-2000 2003/502501 21-Jan-2003 ASMGPublished
g.010 KR Chemical Deposition Reactor and Method
of Forming a Thin Film using the Same
KR 1999/23078 19-Jun-2000 2001/1007431 26-Jan-2001 ASMGPublished
g.010 US Chemical Deposition Reactor and Method
of Forming a Thin Film using the Same
US 09/763238 19-Jun-2000 6539891 01-Apr-2003 ASMGIssued
g.010 WO Chemical Deposition Reactor and Method
of Forming a Thin Film using the Same
WO PCT/KR00/0 19-Jun-2000 0079576 28-Dec-2000 ASMGPublished
g.015 EP Thin Film Forming Method EP 2001/937028 08-Jun-2000 1292970 19-Mar-2003 ASMGPublished
Pa
g
e 1 of 13
S
M Patents Licensed / Sub-licensed to Oxford Instruments
Restricted Distribution
October 14, 2005

Case Extension ApplicationNo FilingDate PublicationNo
P
ublication Dat
e
PatentNo Issue DateTitle Status Assgnee
g.015 JP Thin Film Forming Method JP 2001/000503 08-Jun-2001 2003/536272 02-Dec-2003 3687651 17-Jun-2005 ASMGPublished
g.015 US Thin Film Forming Method US 2003/000297 15-Jul-2003 2004/0009307 15-Jan-2004 ASMGPublished
g.015 WO Thin Film Forming Method WO PCT/KR01/0 08-Jun-2001 0199166 27-Dec-2001 ASMGPublished
g.017 EP Plasma Enhanced ALD equipment and
Method of forming a Conducting Thin Film
EP 2001/000957 06-Aug-2001 1421606 26-May-2004 ASMGPublished
g.017 JP Plasma Enhanced ALD equipment and
Method of forming a Conducting Thin Film
JP 06-Aug-2001 2005/502784 27-Jan-2005 ASMGPublished
g.017 KR Plasma Enhanced ALD equipment and
Method of forming a Conducting Thin Film
KR 2001/46802 02-Aug-2001 11-Feb-2003 ASMGPublished
g.017 US Plasma Enhanced ALD equipment and
Method of forming a Conducting Thin Film
US 10/486311 06-Aug-2001 2004/0231799 25-Nov-2004 ASMGPublished
g.017 WO Plasma Enhanced ALD equipment and
Method of forming a Conducting Thin Film
WO PCT/KR01/0 06-Aug-2001 03023835 20-Mar-2003 ASMGPublished
g.018 KR Apparatus for Depositing KR 2001/69598 08-Nov-2001 2003/0038168 16-May-2003 ASMGPublished
g.018 US Apparatus for Depositing US 10/495156 08-Nov-2002 2005/0034664 17-Feb-2005 ASMGPublished
g.018 WO Apparatus for Depositing WO PCT/KR02/0 08-Nov-2002 03041141 15-May-2003 ASMGPublished
g.019 AUS Method for Forming Thin Film US 10/495157 08-Nov-2002 2005/0037154 17-Feb-2005 ASMGPublished
g.019 EP Method for Forming Thin Film EP 2002/000788 08-Nov-2002 1454347 08-Sep-2004 ASMGPublished
g.019 JP Method for Forming Thin Film JP 2003/000543 08-Nov-2002 2005/509093 07-Apr-2005 ASMGPublished
g.019 KR Method for Forming Thin Film KR 2001/69597 08-Nov-2001 3038167 16-May-2003 ASMGPublished
g.019 WO Method for Forming Thin Film WO PCT/KR02/0 08-Nov-2002 03041142 15-May-2003 ASMGPublished
I.052 AUS LPCVD with ALD preconditioning US 09/611602 07-Jul-2000 09-Apr-2003 6592942 15-Jul-2003 ASMIIssued
I.052 DE LPCVD with ALD preconditioning DE 09-Jul-2001 1299572 09-Apr-2003 60104426 21-Jul-2004 ASMIIssued
I.052 EP LPCVD with ALD preconditioning EP 1952051.9 09-Jul-2001 1299572 09-Apr-2003 1299572 21-Jul-2004 ASMIPublished&
Gr
I.052 FR LPCVD with ALD preconditioning FR 09-Jul-2001 1299572 09-Apr-2003 1299572 21-Jul-2004 ASMIIssued
Pa
g
e 2 of 13
S
M Patents Licensed / Sub-licensed to Oxford Instruments
Restricted Distribution
October 14, 2005

Case Extension ApplicationNo FilingDate PublicationNo
P
ublication Dat
e
PatentNo Issue DateTitle Status Assgnee
I.052 GB LPCVD with ALD preconditioning GB 09-Jul-2001 1299572 09-Apr-2003 1299572 21-Jul-2004 ASMIIssued
I.052 JP LPCVD with ALD preconditioning JP 513963/02 09-Jul-2001 2004/504496 12-Feb-2004 ASMIPublished
I.052 PCT LPCVD with ALD preconditioning PCT 2001/095205 09-Jul-2001 1299572 09-Apr-2003 ASMIPublished
I.053 AUS ALD in hot wall batch reactor US 09/611536 07-Jul-2000 6585823 01-Jul-2003 ASMIIssued
I.053 JP ALD in hot wall batch reactor JP 2001/198085 26-Jun-2001 2002/060947 28-Feb-2002 ASMIPublished
I.100 00 Valve block for ALD EP 03076812.1 11-Jun-2003 1486707 15-Dec-2004 ASMIPublished
I.100 00 Valve block for ALD US 10/864260 09-Jun-2004 2004/0250853 16-Dec-2004 ASMIPublished
I.100 00 Valve block for ALD JP 2004/171168 09-Jun-2004 2005/51205 24-Feb-2005 ASMIPublished
MC.004 AUS Active thermal insulation US 08/682704 25-Sep-1996 05-Jan-1999 5855680 05-Jan-1999 ASMIIssued
MC.004 DE Active thermal insulation DE 19581484.3 25-Jul-1996 19581484 02-Jan-1997 ASMIPublished
MC.004 FI Active thermal insulation FI 945610 28-Nov-1994 29-May-1996 97730 10-Feb-1997 ASMIIssued
MC.004 JP Active thermal insulation JP 518299/1996 29-Jul-1996 1997/508889 09-Sep-1997 ASMIPublished
MC.004 KR Active thermal insulation KR 10/1996/0704 29-Jul-1996 12-Feb-1997 255429 14-Feb-2000 ASMIIssued
MC.004 PCT Active thermal insulation WO /FI95/00657 28-Nov-1995 06-Jun-1996 ASMIPublished
MC.005 AUS Pump between pulses US 08/682705 25-Sep-1996 18-Jan-2000 6015590 18-Jan-2000 ASMIIssued
MC.005 C1US Pump between pulses US 09/482625 14-Jan-2000 6572705 03-Jun-2003 6572705 03-Jun-2003 ASMIIssued
MC.005 C2US Pump between pulses US 09/855321 14-May-2001 2002/0041931 11-Apr-2002 ASMIPublished
MC.005 DE Pump between pulses DE 19581483.5 25-Jul-1996 02-Jan-1997 ASMIPublished
MC.005 FI Pump between pulses FI 945611 28-Nov-1994 11-Jun-1996 100409 28-Nov-1997 ASMIIssued
MC.005 JP Pump between pulses JP 518300/1996 29-Jul-1996 09-Sep-1997 ASMIPublished
MC.005 KR Pump between pulses KR 10/1996/0704 29-Jul-1996 12-Feb-1997 255430 14-Feb-2000 ASMIIssued
MC.005 PCT Pump between pulses WO /FI95/00658 28-Nov-1995 9617107 06-Jun-1996 ASMIPublished
MC.006 AUS Flow restriction US 08/682703 26-Jul-1996 27-Jan-1998 5711811 27-Jan-1998 ASMIIssued
Pa
g
e 3 of 13
S
M Patents Licensed / Sub-licensed to Oxford Instruments
Restricted Distribution
October 14, 2005

Case Extension ApplicationNo FilingDate PublicationNo
P
ublication Dat
e
PatentNo Issue DateTitle Status Assgnee
MC.006 DE Flow restriction DE 19581482.7 25-Jul-1996 02-Jan-1997 ASMIPublished
MC.006 FI Flow restriction FI 945612 28-Nov-1994 29-May-1996 97731 10-Feb-1997 ASMIIssued
MC.006 JP Flow restriction JP 1996/517343 26-Jul-1996 09-Sep-1997 3349156 13-Sep-2002 ASMIIssued
MC.006 KR Flow restriction KR 10/1996/0704 29-Jul-1996 12-Feb-1997 255431 14-Feb-2000 ASMIIssued
MC.006 PCT Flow restriction WO /FI95/00659 28-Nov-1995 9617969 13-Jun-1996 ASMIPublished
MC.008 EP Functional surfaces EP 97660037.9 02-Apr-1997 799641 08-Oct-1997 ASMIPublished
MC.008 FI Functional surfaces FI 961512 03-Apr-1996 04-Oct-1997 107533 31-Aug-2001 ASMIIssued
MC.008 JP Functional surfaces JP 84939/1997 03-Apr-1997 1998/53609 24-Feb-1998 ASMIPublished
MC.009 CP1US Flow distributor, US CIP US 09/686613 04-Jan-2000 6630030 07-Oct-2003 6630030 07-Oct-2003 ASMIIssued
MC.009 JP Flow distributor JP 506497/1999 28-Dec-1999 12-Mar-2002 ASMIPublished
MC.009 KR Flow distributor KR 10/2000/7000 04-Jan-2000 15-Mar-2001 ASMIPublished
MC.009 PCT Flow distributor WO /FI98/00571 03-Jul-1998 9901595 14-Jan-1999 ASMIPublished
MC.010 AUS Coating inner surfaces of equipment US 09/581020 07-Jun-2000 6416577 09-Jul-2002 6416577 09-Jul-2002 ASMIIssued
MC.010 FI Coating inner surfaces of equipment FI 974472 09-Dec-1997 10-Jun-1999 104383 14-Jan-2000 ASMIIssued
MC.010 PCT Coating inner surfaces of equipment WO /FI98/00955 09-Dec-1998 17-Jun-1999 ASMIPublished
MC.011 FI Ba and Sr source materials FI 981959 11-Sep-1998 12-Mar-2000 108375 15-Jan-2002 ASMIIssued
MC.011 JP Ba and Sr source materials JP 2000/570387 12-Mar-2001 13-Aug-2002 ASMIPublished
MC.011 KR Ba and Sr source materials KR 10/2001/7003 12-Mar-2001 22-Aug-2001 ASMIPublished
MC.011 PCT Ba and Sr source materials WO /FI99/00741 13-Sep-1999 23-Mar-2000 ASMIPublished
MC.012 AUS Single wafer ALCVD™ reactor US 09/568077 10-May-2000 6562140 13-May-2003 6562140 13-May-2003 ASMIIssued
MC.012 C1US Single wafer ALCVD™ reactor US 09/769562 25-Jan-2001 2001/0009140 26-Jul-2001 6579374 17-Jun-2003 ASMIIssued
MC.012 C2US Single wafer ALCVD™ reactor US 10/383291 06-Mar-2003 2003/0150385 14-Aug-2003 ASMIPublished
MC.012 EP Single wafer ALCVD™ reactor EP 00660085.2 10-May-2000 1052309 15-Nov-2000 ASMIPublished
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Case Extension ApplicationNo FilingDate PublicationNo
P
ublication Dat
e
PatentNo Issue DateTitle Status Assgnee
MC.012 FI Single wafer ALCVD™ reactor FI 991078 10-May-1999 991078 11-Nov-2000 ASMIPublished
MC.012 JP Single wafer ALCVD™ reactor JP 2000/137175 10-May-2000 2001/20075 23-Jan-2001 ASMIPublished
MC.012 KR Single wafer ALCVD™ reactor KR 10/2000/0024 10-May-2000 2001/20831 15-Mar-2001 415475 06-Jan-2004 ASMIIssued
MC.012 TW Single wafer ALCVD™ reactor TW 89107029 14-Apr-2000 527433 11-Apr-2003 175825 08-Aug-2003 ASMIIssued
MC.013 AUS High surface area trap US 09/619820 20-Jul-2000 6506352 14-Jan-2003 6506352 14-Jan-2003 ASMIIssued
MC.013 C1US High surface area trap US 10/205296 24-Jul-2002 2002/0187084 12-Dec-2002 ASMIPublished
MC.013 FI High surface area trap FI 991628 20-Jul-1999 991628 21-Jan-2001 110311 31-Dec-2002 ASMIIssued
MC.013 JP High surface area trap JP 2000/220782 21-Jul-2000 2001/62244 13-Mar-2001 ASMIPublished
MC.013 TW High surface area trap TW 89114140 14-Jul-2000 555585 01-Oct-2003 188294 09-Feb-2004 ASMIIssued
MC.015 AUS Metal compounds as oxygen sources US 09/687355 13-Oct-2000 6632279 14-Oct-2003 6632279 14-Oct-2003 ASMIIssued
MC.015 C1US Metal compounds as oxygen sources US 10/618429 10-Jul-2003 2004/0007171 15-Jan-2004 ASMIPublished
MC.015 FI Metal compounds as oxygen sources FI 992223 14-Oct-1999 992223 14-Apr-2001 ASMIPublished
MC.015 JP Metal compounds as oxygen sources JP 2000/315409 16-Oct-2000 2001/172767 26-Jun-2001 ASMIPublished
MC.015 KR Metal compounds as oxygen sources KR 10/2000/0060 14-Oct-2000 2001/40090 15-May-2001 ASMIPublished
MC.016 AUS Yttrium stabilized ZrO2 US 09/835737 16-Apr-2001 2002/0042165 11-Apr-2002 6548424 15-Apr-2003 ASMIIssued
MC.016 C1US Yttrium stabilized ZrO2 US 10/410718 08-Apr-2003 2003/0215996 20-Nov-2003 6777353 17-Aug-2004 ASMIIssued
MC.016 JP Yttrium stabilized ZrO2 JP 2001/117318 16-Apr-2001 2001/355070 25-Dec-2001 ASMIPublished
MC.016 TW Yttrium stabilized ZrO2 TW 90108955 13-Apr-2001 567584 21-Dec-2003 193372 20-Apr-2004 ASMIIssued
MC.017 AUS Ozone for silicon/metal oxides US 10/148525 27-Aug-2002 2003/0188682 09-Oct-2003 ASMIPublished
MC.017 C1US Ozone for silicon/metal oxides US 10/678766 02-Oct-2003 2004/0065253 08-Apr-2004 ASMIPublished
MC.017 EP Ozone for silicon/metal oxides EP 00987492.6 04-Apr-2000 1248865 16-Oct-2002 ASMIPublished
MC.017 JP Ozone for silicon/metal oxides JP 2001/542604 04-Dec-2000 2003/515674 07-May-2003 ASMIPublished
MC.017 KR Ozone for silicon/metal oxides KR 10/2002/7006 30-May-2002 2002/63196 01-Aug-2002 ASMIPublished
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