Panasonic 2SA2174J User manual

Transistors
Publication date: November 2005 SJC00342AED 1
2SA2174J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6054J
 Features
 High forward current transfer ratio hFE
 SS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing.
 Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −60 V
Collector-emitter voltage (Base open) VCEO −50 V
Emitter-base voltage (Collector open) VEBO −7V
Collector current IC−100 mA
Peak collector current ICP −200 mA
Collector power dissipation PC125 mW
Junction temperature Tj125 °C
Storage temperature Tstg −55 to +125 °C
 Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0−60 V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0−50 V
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0− 7V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0− 0.1µA
Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0−100 µA
Forward current transfer ratio hFE VCE = −10 V, IC = −2 mA 160 460 
Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA − 0.2− 0.5V
Transition frequency fTVCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz 2.2pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: 7L
Unit: mm
1: Base
2: Emitter
3: Collector SSMini3-F1 Package
0.27±0.02
3
1 2
0.12+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70+0.05
–0.03
(0.375)
5°
5°
1.60+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2174J
2 SJC00342AED
PT  Ta IC  VCE IC  VBE
VCE(sat)  IC hFE  IC Cob  VCB
0 40 12080
0
140
40
60
20
100
120
80
2SA2174J_PC-Ta
Collector power dissipation PC (mW)
Ambient temperature Ta (°C)
0−4−8−12
0
−10
−20
−30
−50
−40
−60
−70
−80
2SA2174J_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C
−50 µA
−100 µA
−150 µA
−200 µA
−250 µA
IB = −300 µA
0 − 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4
0
−30
−40
−50
−20
−10
−60
−70
−80
−90
−100
2SA2174J_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
VCE = −10 V
Ta = 85°C
25°C
−25°C
− 0.1 −1−10 −100
− 0.01
− 0.1
−1
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
2SA2174J_VCE(sat)-IC
IC /IB = 10
Ta = 85°C
25°C
−25°C
−1−10 −100 −1 000
0
300
350
250
400
50
100
200
150
Collector current IC (mA)
Forward current transfer ratio hFE
2SA2174J_hFE-IC
VCE = −10 V
Ta = 85°C
25°C
−25°C
0−8−24−16 −32 −40
1
10
Collector-base voltage VCB (V)
2SA2174J_Cob-VCB
Collector output capacitance (Common base, input open circuited) Cob (pF)
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).

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semiconductors described in this book
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
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mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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