Texas Instruments AN-2166 LMZ10500 User manual

10 mV/Div
500 MHz BW 1 µs/Div
COUT = 10 F 10V 0805 X5R
VOUT RIPPLE
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
20
30
40
50
60
70
80
90
100
EFFICIENCY (%)
LOAD CURRENT (A)
VOUT = 1.2V
VOUT = 1.8V
VOUT = 2.5V
VOUT = 3.3V
LMZ10500
www.ti.com SNVS723C –OCTOBER 2011–REVISED MARCH 2013
LMZ10500 650mA SIMPLE SWITCHER® Nano Module with 5.5V Maximum Input Voltage
Check for Samples: LMZ10500
1FEATURES DESCRIPTION
The LMZ10500 SIMPLE SWITCHER® nano module
2• Integrated Inductor is an easy-to-use step-down DC-DC solution capable
• Miniature Form Factor (3.0mm x 2.5mm x of driving up to 650mA load in space-constrained
1.425mm) applications. Only an input capacitor, an output
• 8-pin LLP Footprint capacitor, a small VCON filter capacitor, and two
resistors are required for basic operation. The nano
• –40°C to 125°C Junction Temperature Range module comes in 8-pin POS footprint package with
• Adjustable Output Voltage an integrated inductor. Internal current limit based
• 2.0MHz Fixed PWM Switching Frequency softstart function, current overload protection, and
thermal shutdown are also provided.
• Integrated Compensation
• Soft Start Function System Performance
• Current Limit Protection (Quick Overview Links: VOUT =1.2V,1.8V,2.5V,
• Thermal Shutdown Protection 3.3V)
• Input Voltage UVLO for Power-up, Power-
down, and Brown-out Conditions Typical Efficiency at VIN = 3.6V
• Only 5 External Components — Resistor
Divider and 3 Ceramic Capacitors
APPLICATIONS
• Point of Load Conversions from 3.3V and 5V
Rails
• Space Constrained Applications
• Low Output Noise Applications
ELECTRICAL SPECIFICATIONS
• Up to 650mA Output Current
• Input Voltage Range 2.7V to 5.5V
• Output Voltage Range 0.6V to 3.6V
• Efficiency up to 95% Output Voltage Ripple
PERFORMANCE BENEFITS VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
• Small Solution Size
• Low output Voltage Ripple
• Easy Component Selection and Simple PCB
Layout
• High Efficiency Reduces System Heat
Generation
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2011–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

PAD
PAD
PAD
0 200 400 600 800 1000
0
10
20
30
40
50
60
70
80
RADIATED EMISSIONS (dBV/m)
FREQUENCY (MHz)
Emissions
CISPR 22 Class B Limit
CISPR 22 Class A Limit
LMZ10500
SNVS723C –OCTOBER 2011–REVISED MARCH 2013 www.ti.com
Radiated EMI (CISPR22)
VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
Connection Diagram
Figure 1. Package Number NQB0008A
Pin Descriptions
Pin # Name Description
1 EN Enable Input. Set this digital input higher than 1.2V for normal operation. For shutdown, set low. Pin is
internally pulled up to VIN and can be left floating for always-on operation.
2 VCON Output voltage control pin. Connect to analog voltage from resisitve divider or DAC/controller to set the VOUT
voltage. VOUT = 2.5 x VCON. Connect a small (470pF) capacitor from this pin to SGND to provide noise
filtering.
3 FB Feedback of the error amplifier. Connect directly to output capacitor to sense VOUT.
4 SGND Ground for analog and control circuitry. Connect to PGND at a single point.
5 VOUT Output Voltage. Connected to one terminal of the integrated inductor. Connect output filter capacitor between
VOUT and PGND.
6 PGND Power ground for the power MOSFETs and gate-drive circuitry.
7 VIN Voltage supply input. Connect ceramic capacitor between VIN and PGND as close as possible to these two
pins. Typical capacitor values are between 4.7µF and 22µF.
8 VREF 2.35V voltage reference output. Typically connected to VCON pin through a resistive divider to set the output
voltage.
PAD The 3 pads underneath the module are not internally connected to any node. These pads should be
connected to the ground plane for improved thermal performance.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings (1)(2)
VIN, VREF to SGND −0.2V to +6.0V
PGND to SGND −0.2V to +0.2V
EN, FB, VCON (SGND −0.2V)
to (VIN +0.2V)
w/6.0V max
VOUT (PGND −0.2V)
to (VIN +0.2V)
w/6.0V max
Junction Temperature (TJ-MAX) +150°C
Storage Temperature Range −65°C to +150°C
Maximum Lead Temperature +260°C
ESD Susceptibility(3) ±2kV
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(3) The human body model is a 100pF capacitor discharged through a 1.5 kΩresistor into each pin. Test method is per JESD-22-114.
Operating Ratings (1)
Input Voltage Range 2.7V to 5.5V
Recommended Load Current 0 mA to 650mA
Junction Temperature (TJ) Range −40°C to +125°C
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which
operation of the device is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Thermal Properties
Junction-to-Ambient Thermal 120°C/W
Resistance (θJA), NQB0008A Package
(1)
(1) Junction-to-ambient thermal resistance (θJA) is based on 4 layer board thermal measurements, performed under the conditions and
guidelines set forth in the JEDEC standards JESD51-1 to JESD51-11. θJA varies with PCB copper area, power dissipation, and airflow.
Electrical Characteristics (1)
Specifications with standard typeface are for TJ= 25°C only; Limits in bold face type apply over the operating junction
temperature range TJof -40°C to 125°C. Minimum and maximum limits are guaranteed through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for reference purposes
only. Unless otherwise stated the following conditions apply: VIN = 3.6V, VEN = 1.2V. Min Typ Max
Symbol Parameter Conditions Units
(1) (2) (1)
SYSTEM PARAMETERS
VREF x GAIN Reference voltage x VCON to VIN = VEN = 5.5V, VCON = 1.44V 5.7575 5.875 5.9925 V
FB Gain
GAIN VCON to FB Gain VIN = 5.5V, VCON = 1.44V 2.4375 2.5 2.5750 V/V
VINUVLO VIN rising threshold 2.4 V
VINUVLO VIN falling theshold 2.25 V
ISHDN Shutdown supply current VIN = 3.6V, VEN = 0.5V 11 18 µA
(3)
IqDC bias current into VIN VIN = 5.5V, VCON = 1.6V, IOUT =6.5 8.5 mA
0A
RDROPOUT VIN to VOUTresistance IOUT = 200 mA 285 425 mΩ
(1) Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlation
using Statistical Quality Control (SQC) methods. Limits are used to calculate the Average Outgoing Quality Level (AOQL).
(2) Typical numbers are at 25°C and represent the most likely parametric norm.
(3) Shutdown current includes leakage current of the high side PFET.
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Electrical Characteristics (1) (continued)
Specifications with standard typeface are for TJ= 25°C only; Limits in bold face type apply over the operating junction
temperature range TJof -40°C to 125°C. Minimum and maximum limits are guaranteed through test, design, or statistical
correlation. Typical values represent the most likely parametric norm at TJ= 25°C, and are provided for reference purposes
only. Unless otherwise stated the following conditions apply: VIN = 3.6V, VEN = 1.2V. Min Typ Max
Symbol Parameter Conditions Units
(1) (2) (1)
SYSTEM PARAMETERS
ILIM DC Output Current Limit VCON = 0.24V 800 1000 mA
(4)
FOSC Internal oscillator frequency 1.75 2.0 2.25 MHz
VIH,ENABLE Enable logic HIGH voltage 1.2 V
VIL,ENABLE Enable logic LOW voltage 0.5 V
TSD Thermal shutdown Rising Threshold 150 °C
TSD-HYST Thermal shutdown hysteresis 20 °C
DMAX Maximum duty cycle 100 %
TON-MIN Minimum on-time 50 ns
θJA Package Thermal Resistance 20mm x 20mm board
2 layers, 2 oz copper, 0.5W, no 118
airlow
15mm x 15mm board
2 layers, 2 oz copper, 0.5W, no 132 °C/W
airlow
10mm x 10mm board
2 layers, 2 oz copper, 0.5W, no 157
airlow
(4) Current limit is built-in, fixed, and not adjustable.
System Characteristics
The following specifications are guaranteed by design providing the component values in the Typical Application Circuit are
used (CIN = COUT = 10 µF, 6.3V, 0603, TDK C1608X5R0J106K). These parameters are not guaranteed by production
testing. Unless otherwise stated the following conditions apply: TA= 25°C.
Symbol Parameter Conditions Min Typ Max Units
ΔVOUT/VOUT Output Voltage Regulation Over VOUT = 0.6V
Line Voltage and Load Current ΔVIN =2.7V to 4.2V ±1.23 %
ΔIOUT = 0A to 650mA
ΔVOUT/VOUT Output Voltage Regulation Over VOUT = 1.5V
Line Voltage and Load Current ΔVIN = 2.7V to 5.5V ±0.56 %
ΔIOUT = 0A to 650mA
ΔVOUT/VOUT Output Voltage Regulation Over VOUT = 3.6V
Line Voltage and Load Current ΔVIN = 4.0V to 5.5V ±0.24 %
ΔIOUT = 0A to 650 mA
VREF TRISE Rise time of reference voltage EN = Low to High, VIN = 4.2V 10 µs
VOUT = 2.7V, IOUT = 650 mA
VIN = 5.0V, VOUT = 3.3V
Peak Efficiency 95
IOUT = 200 mA
η%
Full Load Efficiency VIN = 5.0V, VOUT = 3.6V 93
IOUT = 650 mA
VOUT Ripple Output voltage ripple VIN = 5.0V, VOUT = 1.8V 8 mV pk-pk
IOUT = 650 mA (1)
VIN = 2.7V to 5.5V,
Line Line transient response TR= TF= 10 µs, 25 mV pk-pk
Transient VOUT = 1.8V, IOUT = 650 mA
(1) Ripple voltage should be measured across COUT on a well-designed PC board using the suggested capacitors.
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System Characteristics (continued)
The following specifications are guaranteed by design providing the component values in the Typical Application Circuit are
used (CIN = COUT = 10 µF, 6.3V, 0603, TDK C1608X5R0J106K). These parameters are not guaranteed by production
testing. Unless otherwise stated the following conditions apply: TA= 25°C.
Symbol Parameter Conditions Min Typ Max Units
VIN = 5.0V
Load TR= TF= 40 µs,
Load transient response 25 mV pk-pk
Transient VOUT = 1.8V
IOUT = 65mA to 650mA
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60 70 80 90 100 110 120 130
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
OUTPUT CURRENT (A)
AMBIENT TEMPERATURE (°C)
VIN = 4.0V
VIN = 4.5V
VIN = 5.0V
VIN = 5.5V
0 200 400 600 800 1000
0
10
20
30
40
50
60
70
80
RADIATED EMISSIONS (dBV/m)
FREQUENCY (MHz)
Emissions
CISPR 22 Class B Limit
CISPR 22 Class A Limit
60 70 80 90 100 110 120 130
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
OUTPUT CURRENT (A)
AMBIENT TEMPERATURE (°C)
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
60 70 80 90 100 110 120 130
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
OUTPUT CURRENT (A)
AMBIENT TEMPERATURE (°C)
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
DROPOUT VOLTAGE (V)
LOAD CURRENT (A)
VIN = 2.7V
VIN = 3.3V
VIN = 3.6V
VIN = 4.0V
60 70 80 90 100 110 120 130
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
OUTPUT CURRENT (A)
AMBIENT TEMPERATURE (°C)
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
LMZ10500
SNVS723C –OCTOBER 2011–REVISED MARCH 2013 www.ti.com
Typical Performance Characteristics
Unless otherwise specified the following conditions apply: VIN = 3.6V, TA= 25°C
Dropout Voltage
vs
Load Current and Input Voltage Thermal Derating VOUT = 1.2V, θJA = 120°C/W
Figure 2. Figure 3.
Thermal Derating VOUT = 1.8V, θJA = 120°C/W Thermal Derating VOUT = 2.5V, θJA = 120°C/W
Figure 4. Figure 5.
Radiated EMI (CISPR22)
VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
Thermal Derating VOUT = 3.3V, θJA = 120°C/W Default evaluation board BOM
Figure 6. Figure 7.
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100m 1 10 100
0
10
20
30
40
50
60
70
80
CONDUCTED EMISSIONS (dBV)
FREQUENCY (MHz)
Conducted Emissions
CISPR 22 Quasi Peak
CISPR 22 Average
10 µs/Div
500 mV/Div
500 mV/Div
200 mA/Div
200 mA/Div
VCON
IL
IOUT
VOUT
LMZ10500
www.ti.com SNVS723C –OCTOBER 2011–REVISED MARCH 2013
Typical Performance Characteristics (continued)
Unless otherwise specified the following conditions apply: VIN = 3.6V, TA= 25°C
Conducted EMI
VIN = 5.0V, VOUT = 1.8V, IOUT = 650mA
Default evaluation board BOM with additional 1µH 1µF LC
input filter Startup
Figure 8. Figure 9.
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1.20
1.21
1.22
1.23
1.24
OUTPUT VOLTAGE (V)
LOAD CURRENT (A)
VIN = 2.7V
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.6
0.7
0.8
0.9
1.0
1.1
DC CURRENT LIMIT (A)
INPUT VOLTAGE (V)
TA= 85°C
10 mV/Div
500 MHz BW 1 µs/Div
COUT = 10 F 10V 0805 X5R
VOUT RIPPLE
30 mV/Div
250 MHz BW 500 µs/Div
COUT = 10 F 10V 0805 X5R
LOAD CURRENT
OUTPUT VOLTAGE
500 mA/Div
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
20
30
40
50
60
70
80
90
100
EFFICIENCY (%)
LOAD CURRENT (A)
VIN = 2.7V
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
FB
EN
VREF
SGND
PGND
1.2V
VOUT
VIN
COUT
CIN
VOUT
VCON
VIN
CVC
RB
RT
CIN
COUT
CVC
RT
RB
243 k:1% 0603
63.4 k:1% 0603
10 P)86.3V 0805 X7R or X5R
10 PF86.3V 0805 X7R or X5R
470 pF 86.3V 0603 X7R or X5R
LMZ10500
SNVS723C –OCTOBER 2011–REVISED MARCH 2013 www.ti.com
1.2V
Schematic VOUT = 1.2V Efficiency VOUT = 1.2V
Figure 10. Figure 11.
Output Ripple VOUT = 1.2V Load Transient VOUT = 1.2V
Figure 12. Figure 13.
Line and Load Regulation VOUT = 1.2V DC Current Limit VOUT = 1.2V
Figure 14. Figure 15.
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
1.77
1.78
1.79
1.80
1.81
OUTPUT VOLTAGE (V)
LOAD CURRENT (A)
VIN = 2.7V
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
DC CURRENT LIMIT (A)
INPUT VOLTAGE (V)
TA= 85°C
30 mV/Div
250 MHz BW 500 µs/Div
COUT = 10 F 10V 0805 X5R
LOAD CURRENT
OUTPUT VOLTAGE
500mA/Div
10 mV/Div
500 MHz BW 1 µs/Div
COUT = 10 F 10V 0805 X5R
VOUT RIPPLE
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
20
30
40
50
60
70
80
90
100
EFFICIENCY (%)
LOAD CURRENT (A)
VIN = 2.7V
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
FB
EN
VREF
SGND
PGND
1.8V
VOUT
VIN
COUT
CIN
VOUT
VCON
VIN
CVC
RB
RT
CIN
COUT
CVC
RT
RB
187 k:1% 0603
82.5 k:1% 0603
10 P)86.3V 0805 X7R or X5R
10 PF86.3V 0805 X7R or X5R
470 pF 86.3V 0603 X7R or X5R
LMZ10500
www.ti.com SNVS723C –OCTOBER 2011–REVISED MARCH 2013
1.8V
Schematic VOUT = 1.8V Efficiency VOUT = 1.8V
Figure 16. Figure 17.
Output Ripple VOUT = 1.8V Load Transient VOUT = 1.8V
Figure 18. Figure 19.
Line and Load Regulation VOUT = 1.8V DC Current Limit VOUT = 1.8V
Figure 20. Figure 21.
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
2.50
2.50
2.51
2.52
2.53
OUTPUT VOLTAGE (V)
LOAD CURRENT (A)
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
2.5 3.0 3.5 4.0 4.5 5.0 5.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
DC CURRENT LIMIT (A)
INPUT VOLTAGE (V)
TA= 85°C
10 mV/Div
500 MHz BW 1 Ps/Div
COUT = 10 PF 10V 0805 X5R
VOUT RIPPLE
30 mV/Div
250 MHz BW 500 µs/Div
COUT = 10 F 10V 0805 X5R
LOAD CURRENT
OUTPUT VOLTAGE
500 mA/Div
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
20
30
40
50
60
70
80
90
100
EFFICIENCY (%)
LOAD CURRENT (A)
VIN = 3.3V
VIN = 3.6V
VIN = 5.0V
VIN = 5.5V
FB
EN
VREF
SGND
PGND
2.5V
VOUT
VIN
COUT
CIN
VOUT
VCON
VIN
CVC
RB
RT
10 P)86.3V 0805 X7R or X5R
CIN
COUT
CVC
RT
RB
10 PF86.3V 0805 X7R or X5R
470 pF 86.3V 0603 X7R or X5R
150 k:1% 0603
118 k:1% 0603
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2.5V
Schematic VOUT = 2.5V Efficiency VOUT = 2.5V
Figure 22. Figure 23.
Output Ripple VOUT = 2.5V Load Transient VOUT = 2.5V
Figure 24. Figure 25.
Line and Load Regulation VOUT = 2.5V DC Current Limit VOUT = 2.5V
Figure 26. Figure 27.
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